CPV362M4FPbF Datasheet

CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
IGBT SIP Module (Fast IGBT)
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Optimized for medium speed, see fig. 1 for
current vs. frequency curve
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
VCES
600 V
IRMS per phase (3.1 kW total)
with TC = 90 °C
11 A
TJ
125 °C
Supply voltage
360 VDC
Power factor
0.8
Modulation depth See fig. 1
115 %
VCE(on) (typical)
at IC = 4.8 A, 25 °C
1.41 V
Speed
1 kHz to 8 kHz
DESCRIPTION
The IGBT technology is the key to the advanced line of IMS
(Insulated Metal Substrate) power modules. These modules
are more efficient than comparable bipolar transistor
modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
Package
SIP
Circuit
Three phase inverter
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each
IGBT
Pulsed collector current
Clamped inductive load current
SYMBOL
TEST CONDITIONS
VCES
IC
MAX.
UNITS
600
V
TC = 25 °C
8.8
TC = 100 °C
4.8
ICM
Repetitive rating; VGE = 20 V, 
pulse width limited by maximum 
junction temperature. See fig. 20
26
ILM
VCC = 80 % (VCES), VGE = 20 V, 
L = 10 μH, RG = 50  See fig. 19
800
TC = 100 °C
3.4
A
Diode continuous forward current
IF
Diode maximum forward current
IFM
26
Gate to emitter voltage
VGE
± 20
V
2500
VRMS
Isolation voltage
Maximum power dissipation, each
IGBT
Operating junction and 
storage temperature range
VISOL
PD
Any terminal to case, t = 1 min
TC = 25 °C
23
TC = 100 °C
9.1
TJ, TStg
W
-40 to +150
Soldering temperature
For 10 s
Mounting torque
6-32 or M3 screw
°C
300 (0.063" (1.6 mm) from case)
5 to 7
(0.55 to 0.8)
lbf · in
(N · m)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each diode, one diode in conduction
Case to sink, flat, greased surface
Weight of module
SYMBOL
TYP.
MAX.
RthJC (IGBT)
-
5.5
RthJC (diode)
-
9.0
RthCS (module)
0.1
-
20 (0.7)
-
UNITS
°C/W
g (oz.)
Revision: 10-Jun-15
Document Number: 94361
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
Temperature coeff. of breakdown voltage V(BR)CES TJ
TEST CONDITIONS
VGE = 0 V, IC = 250 μA
Pulse width  80 μs, duty factor  0.1 %
VGE = 0 V, IC = 1.0 mA
Gate threshold voltage
Gate to emitter leakage current
Temperature coeff. of threshold voltage
VCE(on)
VGE(th)
IGES
VGE(th) /TJ
Forward transconductance
gfe
Zero gate voltage collector current
ICES
Diode forward voltage drop
VFM
TYP.
MAX.
UNITS
600
-
-
V
-
0.72
-
V/°C
-
1.41
1.7
-
1.66
-
IC = 4.8 A, TJ = 150 °C
-
1.42
-
VCE = VGE, IC = 250 μA
IC = 4.8 A
Collector to emitter saturation voltage
MIN.
VGE = 15 V
See fig. 2, 5
IC = 8.8 A
V
3.0
-
6.0
VGE = ± 20 V
-
-
± 100
nA
VGE = 0 V, IC = 1.0 mA
-
-11
-
mV/°C
2.9
5.0
-
S
VCE = 100 V, IC = 4.8 A
Pulse width 5.0 μs; single shot
-
VGE = 0 V, VCE = 600 V
-
VGE = 0 V, VCE = 600 V, TJ = 150 °C
-
-
1700
IC = 8.0 A
IC = 8.0 A, TJ = 150 °C
-
1.4
1.7
-
1.3
1.6
MIN.
TYP.
MAX.
-
30
45
-
4.0
6.0
20
See fig. 13
250
μA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge (turn on)
Qg
Gate to emitter charge (turn on)
Qge
TEST CONDITIONS
IC = 4.8 A
VCC = 400 V
See fig. 8
Gate to collector charge
Qgc
-
13
Turn-on delay time
td(on)
-
49
-
tr
-
22
-
-
200
300
-
214
320
-
0.23
-
-
0.33
-
-
0.45
0.70
-
48
-
Rise time
Turn-off delay time
Fall time
td(off)
tf
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Ets
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
Total switching loss
Ets
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Diode reverse recovery time
trr
Diode peak reverse recovery current
Irr
Diode reverse recovery charge
Qrr
Diode peak rate of fall of recovery during tb
dI(rec)M /dt
TJ = 25 °C
IC = 4.8 A, VCC = 480 V
VGE = 15 V, RG = 50
Energy losses include “tail” and 
diode reversev recovery. 
See fig. 9, 10, 18
TJ = 150 °C, 
IC = 4.8 A, VCC = 480 V
VGE = 15 V, RG = 50
Energy losses include “tail” and 
diode reverse recovery
See fig. 10, 11, 18
VGE = 0 V
VCC = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
See fig. 7
See fig. 14
See fig. 15
See fig. 16
See fig. 17
IF = 8.0 A
VR = 200 V
dI/dt = 200 A/μs
-
25
-
-
435
-
-
364
-
-
0.93
-
-
340
-
-
63
-
-
5.9
-
-
37
55
-
55
90
-
3.5
50
-
4.5
8.0
-
65
138
-
124
360
-
240
-
-
210
-
UNITS
nC
ns
mJ
ns
mJ
pF
ns
A
nC
A/μs
Revision: 10-Jun-15
Document Number: 94361
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CPV362M4FPbF
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Vishay Semiconductors
9
2.63
7
Load Current (A)
2.34
TC = 90 °C
TJ = 125 °C
Power factor = 0.8
Modulation depth = 1.15
VCC = 50 % of rated voltage
6
2.05
1.75
5
1.46
4
1.17
3
0.88
2
0.58
1
0.29
0
0.1
1
Total Output Power (kW)
8
0.00
100
10
f - Frequency (kHz)
TJ = 25 °C
TJ = 150 °C
10
VGE = 15 V
20 µs pulse width
1
1
IC - Collector to Emitter Current (A)
Maximum DC Collector Current (A)
100
8
6
4
2
0
25
50
75
100
125
VCE - Collector to Emitter Voltage (V)
TC - Case Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Maximum Collector Current vs.
Case Temperature
100
TJ = 150 °C
10
TJ = 25 °C
VCC = 50 V
5 µs pulse width
1
5
10
10
VCE - Collector to Emitter Voltage (V)
IC - Collector to Ermitter Current (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
6
7
8
9
10
11
12
13
14
2.5
150
VGE = 15 V
80 µs pulse width
IC = 9.6 A
2.0
IC = 4.8 A
1.5
IC = 2.4 A
1.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
VGE - Gate to Emitter Voltage (V)
TJ - Junction Temperature (°C)
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 10-Jun-15
Document Number: 94361
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CPV362M4FPbF
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Vishay Semiconductors
ZthJC - Thermal Impedance
10
1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single pulse
(thermal response)
0.01
0.00001
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
0.46
VGE = 0 V, f = 1 MHz
Cies = Cge + Cce shorted
Cres = Cgc
Coes = Cce + Cgc
800
600
Total Switching Losses (mJ)
C - Capacitance (pF)
1000
Cies
400
Coes
200
Cres
0
0.44
0.43
0.42
1
20
10
100
20
30
40
50
VCE - Collector to Emitter Voltage (V)
RG - Gate Resistance (Ω)
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
10
VCC = 400 V
IC = 4.8 A
16
12
8
4
0
0
10
Total Switching Losses (mJ)
VGE - Gate to Emitter Voltage (V)
0.45
VCC = 480 V
VGE = 15 V
TJ = 25 °C
IC = 4.8 A
6
12
18
24
30
QG - Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
RG = 50 Ω
VGE = 15 V
VCC = 480 V
IC = 9.6 A
1
IC = 4.8 A
IC = 2.4 A
0.1
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Revision: 10-Jun-15
Document Number: 94361
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CPV362M4FPbF
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100
RG = 50 Ω
TJ = 150 °C
VCC = 480 V
VGE = 15 V
1.5
IF = 16 A
1.0
IF = 8.0 A
40
IF = 4.0 A
20
0
2
4
6
8
0
100
10
1000
IC - Collector to Emitter Current (A)
dIF/dt (A/µs)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
100
100
VGE = 20 V
TJ = 125 °C
IIRRM - (A)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
Safe operating area
10
IF = 16 A
IF = 8.0 A
10
IF = 4.0 A
1
100
1
1
10
100
1000
1000
VCE - Collector to Emitter Voltage (V)
dIF/dt - (A/µs)
Fig. 12 - Turn-Off SOA
Fig. 15 - Typical Recovery Current vs. dIF/dt
500
100
400
VR = 200 V
TJ = 125 °C
TJ = 25 °C
10
Qrr - (nC)
IC - Collector to Emitter Current (A)
60
0.5
0.0
IF - Instantaneous Forward Current (A)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
80
trr (ns)
Total Switching Losses (mJ)
2.0
Vishay Semiconductors
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
300
IF = 16 A
200
IF = 8.0 A
1
100
IF = 4.0 A
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VFM - Forward Voltage Drop
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
0
100
1000
dIF/dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dIF/dt
Revision: 10-Jun-15
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10 000
dI(rec)M/dt - (A/µs)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
Gate voltage D.U.T.
10 % + VG
+ VG
IF = 4.0 A
1000
D.U.T. voltage
and current
Vce
IF = 8.0 A
VCC
IF = 16 A
10 %
IC
Ipk
90 % IC
5 % VCE
tr
td(on)
IC
∫
Eon =
100
100
1000
t1
t2
VCE IC dt
t1
t2
dIF/dt - (A/µs)
Fig. 17 - Typical dI(REC)M/dt vs dIF/dt
Fig. 18c - Test Waveforms of Circuit of Fig. 18a,
Defining Eon, td(on), tr
trr
IC
Same type
device
as
D.U.T.
Qrr =
tx
10 % VCC
Vpk
∫
trr
IC dt
tx
10 % Irr
VCC
Irr
430 µF
80 %
of VCE
D.U.T.
Diode recovery
waveforms
Erec =
Diode reverse
recovery energy
t3
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
t4
Vd IC dt
t3
t4
Fig. 18d - Test Waveforms of Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
90 % V GE
VG Gate signal
device under test
+ VGE
Current D.U.T.
VCE
90 % IC
IC 10 %
VCE
∫
Voltage in D.U.T.
IC
5 % IC
td(off)
tf
Current in D1
∫
t1 + 5 µs
Eoff = VCE IC dt
t1
t0
t1
t1
t2
t2
Fig. 18b - Test Waveforms of Circuit of Fig. 18a,
Defining Eoff, td(off), tf
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
Revision: 10-Jun-15
Document Number: 94361
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L
50 V
RL=
D.U.T.
1000 V
VC*
0 - 480 V
480 V
4 x IC at 25 °C
6000 µF
100 V
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
CIRCUIT CONFIGURATION
1
D3
D1
3
Q1
9
Q3
Q2
16
D4
12
7
Q5
10
4
D2
6
D5
15
Q4
D6
18
13
Q6
19
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95066
Revision: 10-Jun-15
Document Number: 94361
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Outline Dimensions
Vishay Semiconductors
IMS-2 (SIP)
DIMENSIONS in millimeters (inches)
Ø 3.91 (0.154)
2x
62.43 (2.458)
7.87 (0.310)
53.85 (2.120)
5.46 (0.215)
21.97 (0.865)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
0.38 (0.015)
3.94 (0.155)
1.27 (0.050)
4.06 ± 0.51
(0.160 ± 0.020)
5.08 (0.200)
6x
1.27 (0.050)
13 x
2.54 (0.100)
6x
3.05 ± 0.38
(0.120 ± 0.015)
0.76 (0.030)
13 x
0.51 (0.020)
6.10 (0.240)
IMS-2 Package Outline (13 Pins)
Notes
(1) Tolerance uless otherwise specified ± 0.254 mm (0.010")
(2) Controlling dimension: inch
(3) Terminal numbers are shown for reference only
Document Number: 95066
Revision: 30-Jul-07
For technical questions, contact: [email protected]
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Revision: 02-Oct-12
1
Document Number: 91000