CPV364M4UPbF Datasheet

CPV364M4UPbF
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Vishay Semiconductors
IGBT SIP Module
(Ultrafast IGBT)
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Optimized for high speed, see fig. 1 for current vs.
frequency curve
IMS-2
• UL approved file E78996
PRODUCT SUMMARY
• Designed and qualified for industrial level
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
VCES
600 V
IRMS per phase (3.5 kW total)
with TC = 90 °C
12 ARMS
TJ
125 °C
Supply voltage
360 VDC
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Power factor
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical)
at IC = 10 A, 25 °C
1.56 V
Speed
8 kHz to 30 kHz
Package
SIP
Circuit
Three phase inverter
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each IGBT
Pulsed collector current
Clamped inductive load current
SYMBOL
TEST CONDITIONS
VCES
IC
MAX.
UNITS
600
V
TC = 25 °C
20
TC = 100 °C
10
ICM (1)
60
(2)
60
ILM
A
Diode continuous forward current
IF
Diode maximum forward current
IFM
60
Gate to emitter voltage
VGE
± 20
V
2500
VRMS
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and storage 
temperature range
VISOL
PD
TC = 100 °C
t = 1 min, any terminal to case
9.3
TC = 25 °C
63
TC = 100 °C
25
TJ, TStg
-40 to +150
Soldering temperature
For 10 s, (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
W
°C
300
5 to 7
(0.55 to 0.8)
lbf  in
(N m)
Notes
(1) Repetitive rating; V
GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2) V
CC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 10  (see fig. 19)
Revision: 10-Jun-15
Document Number: 94489
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE in conduction
Case to sink, flat, greased surface
SYMBOL
TYP.
MAX.
RthJC (IGBT)
-
2.0
RthJC (DIODE)
-
3.0
RthCS (MODULE)
0.10
-
Weight of module
UNITS
°C/W
20
-
g
0.7
-
oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Temperature coefficient of 
breakdown voltage
SYMBOL
V(BR)CES
(1)
V(BR)CESTJ
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
VGE = 0 V, IC = 250 μA
600
-
-
V
VGE = 0 V, IC = 1.0 mA
-
0.63
-
V/°C
-
1.56
2.1
-
1.84
-
IC = 10 A
Collector to emitter saturation voltage
VCE(on)
IC = 20 A
VGE = 15 V
See fig. 2, 5
IC = 10 A, TJ = 150 °C
Gate threshold voltage
-
1.56
-
V
VGE(th)
VCE = VGE, IC = 250 μA
3.0
-
6.0
Temperature coefficient of
threshold voltage
VGE(th)/TJ
VCE = VGE, IC = 250 μA
-
- 13
-
mV/°C
Forward transconductance
gfe (2)
S
Zero gate voltage collector current
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
VCE = 100 V, IC = 10 A
11
18
-
VGE = 0 V, VCE = 600 V
-
-
250
VGE = 0 V, VCE = 600 V, TJ = 150 °C
-
-
3500
IC = 15 A
IC = 15 A, TJ = 150 °C
VGE = ± 20 V
See fig. 13
-
1.3
1.7
-
1.2
1.6
-
-
± 100
μA
V
nA
Notes
(1) Pulse width  80 μs, duty factor  0.1 %
(2) Pulse width 5.0 μs; single shot
Revision: 10-Jun-15
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IC = 10 A
VCC = 400 V
VGE = 15 V
See fig. 8
MIN.
TYP.
MAX.
-
100
160
-
16
24
-
40
55
-
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
Turn-on delay time
td(on)
-
41
tr
-
13
-
-
96
140
-
110
160
-
0.26
-
-
0.18
-
-
0.44
0.7
TJ = 150 °C 
IC = 10 A, VCC = 480 V
VGE = 15 V, RG = 10 
Energy losses include “tail” and 
diode reverse recovery
See fig. 9, 10, 11, 18
-
39
-
-
15
-
-
220
-
-
160
-
-
0.74
-
VGE = 0 V
VCC = 30 V 
ƒ = 1.0 MHz
See fig. 7
-
2100
-
-
110
-
-
34
-
Rise time
Turn-off delay time
Fall time
td(off)
tf
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Ets
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
Total switching loss
Ets
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Diode reverse recovery time
trr
Diode peak reverse recovery charge
Irr
Diode reverse recovery charge
Qrr
Diode peak rate of fall of 
recovery during tb
dI(rec)M/dt
TJ = 25 °C
IC = 10 A, VCC = 480 V
VGE = 15 V, RG = 10 
Energy losses include “tail” and diode 
reverse recovery
See fig. 9, 10, 11, 18
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
See fig. 14
See fig. 15
See fig. 16
See fig. 17
IF = 15 A
VR = 200 V
dI/dt = 200 A/μs
-
42
60
-
74
120
-
4.0
6.0
-
6.5
10
-
80
180
-
220
600
-
188
-
-
160
-
UNITS
nC
ns
mJ
ns
mJ
pF
ns
A
nC
A/μs
































Revision: 10-Jun-15
Document Number: 94489
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20
5.85
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
LOAD CURRENT (A)
16
14
4.68
4.10
12
3.51
10
2.93
8
2.34
6
1.76
4
1.17
2
0.59
0
0.1
0.00
1
10
Total Output Power (kW)
18
5.27
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
20
Maximum DC Collector Current(A)
IC , Collector-to-Emitter Current (A)
100
TJ = 150°C
10
TJ = 25°C
VGE = 15V
20µs PULSE WIDTH
1
0.1
1
16
12
8
4
0
25
10
Fig. 2 - Typical Output Characteristics
VCE , Collector-to-Emitter Voltage(V)
IC , Collector-to-Emitter Current (A)
2.0
T J = 150°C
10
TJ = 25°C
V CC = 10V
5µs PULSE WIDTH
5
6
7
8
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
75
100
125
150
Fig. 4 - Maximum Collector Current vs. Case Temperature
100
1
50
TC , Case Temperature ( °C)
VCE , Collector-to-Emitter Voltage (V)
9
VGE = 15V
80 us PULSE WIDTH
IC = 20A
1.8
IC = 10A
1.6
1.4
IC = 5.0
5A
1.2
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
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Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
1
t
2
2
2. Peak TJ = P DM x Z thJC + T C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
0.70
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Total Switching Losses (mJ)
C, Capacitance (pF)
4000
3000
Cies
2000
Coes
1000
Cres
VCC
VGE
TJ
0.65
IC
0.60
0.55
0.50
0.45
0.40
0
0
1
10
100
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Total Switching Losses (mJ)
VGE , Gate-to-Emitter Voltage (V)
10
12
8
4
0
0
20
40
60
80
100
120
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
20
30
40
50
Fig. 9 - Typical Switching Losses vs. Gate Resistance
VCC = 400V
I C = 10A
16
10
RG , Gate Resistance (Ω)
VCE , Collector-to-Emitter Voltage (V)
20
= 480V
= 15V
= 25 ° C
= 10A
RG = 10 Ω
VGE = 15V
VCC = 480V
IC = 20 A
1
IC = 10 A
IC = 5.05 A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C )
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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RG
TJ
VCC
1.5
VGE
100
= 10 Ω
= 150 °C
= 480V
= 15V
I C, Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
1.8
Vishay Semiconductors
1.2
0.9
0.6
0.3
VGE = 20V
T J = 125 oC
10
SAFE OPERATING AREA
1
0.0
0
4
8
12
16
20
1
24
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
100
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.8
1.2
1.6
2.0
2.4
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
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800
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR= 200V
T J = 125°C
T J = 25°C
600
80
Q RR - (nC)
t rr - (ns)
IF = 30A
I F = 30A
60
I F = 15A
400
I F = 15A
IF = 5.0A
200
40
I F = 5.0A
20
100
di f /dt - (A/µs)
0
100
1000
100
1000
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 30A
I IRRM - (A)
1000
Fig. 16 - Typical Stored Charge vs. dIF/dt
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
10
di f /dt - (A/µs)
IF = 15A
I F = 5.0A
I F = 15A
I F = 30A
I F = 5.0A
1
100
1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dIF/dt
100
100
1000
di f /dt - (A/µs)
Fig. 17 - Typical dI(rec)M/dt vs dIF/dt
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GATE VOLTAGE D.U.T.
10% +Vg
+Vg
Same type
device as
D.U.T.
DUT VOLTAGE
AND CURRENT
Vce
430µF
80%
of Vce
Vcc
10% Ic
Ipk
90% Ic
Ic
D.U.T.
5% Vce
tr
td(on)
t2
Eon = Vce ie dt
t1
∫
t1
Fig. 18 - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
t2
Fig. 20 - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
90% Vge
trr
Qrr =
Ic
+Vge
tx
10% Vcc
Vce
∫
trr
id dt
tx
10% Irr
Vcc
Ic
90% Ic
10% Vce
Vpk
Irr
Ic
5% Ic
td(off)
DIODE RECOVERY
WAVEFORMS
tf
Eoff =
∫
t1+5µS
Vce ic dt
t1
DIODE REVERSE
RECOVERY ENERGY
t3
t1
t4
Erec = Vd id dt
t3
∫
t4
t2
Fig. 19 - Test Waveforms for Circuit of Fig. 18a,
Defining Eoff, td(off), tf
Fig. 21 - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
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D.U.T.
L
1000 V
RL =
VC
0 - 480 V
6000 µF
100 V
50 V
480 V
4 x IC at 25 °C
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
CIRCUIT CONFIGURATION
1
3
Q1
D1
9
Q3
D3
4
6
Q2
D2
7
12
15
Q5
D5
10
Q4
D4
13
18
16
Q6
D6
19
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95066
Revision: 10-Jun-15
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Outline Dimensions
Vishay Semiconductors
IMS-2 (SIP)
DIMENSIONS in millimeters (inches)
Ø 3.91 (0.154)
2x
62.43 (2.458)
7.87 (0.310)
53.85 (2.120)
5.46 (0.215)
21.97 (0.865)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
0.38 (0.015)
3.94 (0.155)
1.27 (0.050)
4.06 ± 0.51
(0.160 ± 0.020)
5.08 (0.200)
6x
1.27 (0.050)
13 x
2.54 (0.100)
6x
3.05 ± 0.38
(0.120 ± 0.015)
0.76 (0.030)
13 x
0.51 (0.020)
6.10 (0.240)
IMS-2 Package Outline (13 Pins)
Notes
(1) Tolerance uless otherwise specified ± 0.254 mm (0.010")
(2) Controlling dimension: inch
(3) Terminal numbers are shown for reference only
Document Number: 95066
Revision: 30-Jul-07
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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