CPV362M4UPbF www.vishay.com Vishay Semiconductors IGBT SIP Module (Fast IGBT) FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for high speed, see fig. 1 for current vs. frequency curve • UL approved file E78996 IMS-2 • Designed and qualified for industrial level PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES 600 V IRMS per phase (3.1 kW total) with TC = 90 °C 4.6 ARMS TJ 125 °C Supply voltage 360 VDC • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Power factor 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 3.9 A, 25 °C 1.7 V Speed 8 kHz to 30 kHz Package SIP Circuit Three phase inverter The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current, each IGBT SYMBOL VCES IC MAX. UNITS 600 V TC = 25 °C 7.2 TC = 100 °C 3.9 (1) Pulsed collector current ICM Clamped inductive load current ILM (2) Diode continuous forward current TEST CONDITIONS IF 22 TC = 100 °C A 3.4 Diode maximum forward current IFM 22 Gate to emitter voltage VGE ± 20 V 2500 VRMS Isolation voltage Maximum power dissipation, each IGBT Operating junction and storage temperature range VISOL PD 1 minute, any terminal to case TC = 25 °C 23 TC = 100 °C 9.1 TJ, TStg W -40 to +150 °C Soldering temperature 10 s, (0.063" (1.6 mm) from case) Mounting torque 6-32 or M3 screw 300 5 to 7 (0.55 to 0.8) lbf · in (N · m) Notes (1) Repetitive rating; V GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20) (2) V CC = 80 % (VGES), VGE = 20 V, L = 10 μH, RG = 50 (see fig.19) Revision: 10-Jun-15 Document Number: 94483 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4UPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each DIODE, one DIODE on conduction Case to sink, flat, greased surface SYMBOL TYP. MAX. RthJC (IGBT) - 5.5 RthJC (DIODE) - 9.0 RthCS (MODULE) 0.1 - UNITS °C/W 20 g 0.7 oz. Weight of module ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage SYMBOL V(VB)CES (1) V(BR)CES/TJ TEST CONDITIONS MIN. TYP. MAX. UNITS 600 - - V - 0.63 - V/°C - 1.70 2.2 - 1.95 - - 1.70 - 3.0 - 6.0 - -11 - mV/°C VCE = 100 V, IC = 6.5 A 1.4 4.3 - S VGE = 0 V, VCE = 600 V - - 250 VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 2500 IC = 8.0 A - 1.4 1.7 IC = 8.0 A, TJ = 150 °C - 1.3 1.6 VGE = ± 20 V - - ± 100 VGE = 0 V, IC = 250 μA VGE = 0 V, IC = 1 mA IC = 3.9 A Collector to emitter saturation voltage VCE(on) IC = 7.2 A VGE = 15 V See fig. 2, 5 IC = 3.9 A, TJ = 150 °C Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Forward transconductance gfe (2) Zero gate voltage collector current ICES Diode forward voltage drop Gate to emittler leakage current VFM IGES VCE = VGE, IC = 250 μA V μA See fig. 13 V nA Notes (1) Pulse width 80 μs; duty factor 0.1 % (2) Pulse width 5.0 μs, single shot Revision: 10-Jun-15 Document Number: 94483 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4UPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Total gate charge (turn-on) SYMBOL Og Gate to emitter charge (turn-on) OGE Gate to collector charge (turn-on) Ogc Turn-on delay time td(on) Rise time Turn-off delay time Fall time TEST CONDITIONS IC = 3.9 A VCC = 400 V VGE = 15 V tr td(off) tf TJ = 25 °C IC = 3.9 A, VCC = 480 V VGE = 15 V, RG = 50 Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18 MIN. TYP. MAX. - 31 47 - 5.0 7.5 - 13 20 - 45 - - 22 - - 100 160 - 120 180 - 0.13 - Eon Turn-off switching loss Eoff - 0.07 - Total switching loss Ets - 0.20 0.3 Turn-on delay time td(on) - 42 - - 22 - - 120 - - 250 - - 0.35 - - 530 - Rise time Turn-off delay time Fall time tr td(off) tf Total switching loss Ets Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse recovery current Diode reverse recovery charge Diode peak rate of fall of recovery during tb Irr Qrr dI(rec)M/dt VGE = 0 V VCC = 30 V = 1.0 MHz TJ = 25 °C See fig. 7 See fig. 15 TJ = 125 °C TJ = 25 °C See fig. 16 TJ = 125 °C TJ = 25 °C TJ = 125 °C mJ ns - 39 - - 7.4 - - 37 55 - 55 90 - 3.5 5.0 - 4.5 8.0 - 65 138 - 124 360 - 240 - - 210 - mJ pF ns See fig. 14 TJ = 125 °C TJ = 25 °C nC ns Turn-on switching loss TJ = 150 °C IC = 3.9 A, VCC = 480 V VGE = 15 V, RG = 50 Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18 UNITS IF = 8.0 A VR = 200 V dI/dt = 200 A/μs A nC See fig. 17 A/μs Revision: 10-Jun-15 Document Number: 94483 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4UPbF www.vishay.com Vishay Semiconductors 8 LOAD CURRENT (A) 7 6 2.05 1.76 5 1.46 4 1.17 3 0.88 2 0.59 1 0.29 Total Output Power (kW) 2.34 Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage 0.00 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 8 10 TJ = 150°C TJ = 25°C 1 VGE = 15V 20μs PULSE WIDTH A 0.1 0.1 1 Maximum DC Collector Current(A) IC , Collector-to-Emitter Current (A) 100 6 5 3 2 0 25 10 Fig. 2 - Typical Output Characteristics 10 TJ = 150°C TJ = 25°C 1 V CC = 10V 5μs PULSE WIDTH A 6 8 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 10 VCE , Collector-to-Emitter Voltage(V) IC , Collector-to-Emitter Current (A) 3.0 4 75 100 125 150 Fig. 4 - Maximum Collector Current vs. Case Temperature 100 0.1 50 TC , Case Temperature ( ° C) VCE , Collector-to-Emitter Voltage (V) VGE = 15V 80 us PULSE WIDTH IC = 7.8A 2.0 IC = 3.9A IC =1.95A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94483 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4UPbF www.vishay.com Vishay Semiconductors Thermal Response (Z thJC ) 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 PDM 0.1 t 1 t SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 2 / t2 2. Peak TJ = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 0.20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 800 Total Switching Losses (mJ) C, Capacitance (pF) 1000 Cies 600 Coes 400 Cres 200 V CC = 480V V GE = 15V TJ = 25 ° C 0.19 I C = 3.9A 0.18 0.17 0.16 A 0 1 10 1 00 0.15 0 VCE, Collector-to-Emitter Voltage (V) 30 1 VCC = 400V I C = 3.9A 16 12 8 4 0 0 10 20 30 QG , Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage 40 50 RG = 50 Ω VGE = 15V VCC = 480V Total Switching Losses (mJ) VGE , Gate-to-Emitter Voltage (V) 20 Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage 20 10 R G , Gate Resistance (Ω) 40 IC = 7.8 A IC = 3.9 A IC =1.95 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94483 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4UPbF www.vishay.com RG TJ VCC 0.6 VGE 100 = 50 Ω = 150 °C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 0.8 Vishay Semiconductors 0.5 0.3 0.2 0.0 VGE = 20V T J = 125 oC 10 1 SAFE OPERATING AREA 0 2 4 6 0.1 8 1 I C , Collector-to-emitter Current (A) 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector to Emitter Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 100 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Revision: 10-Jun-15 Document Number: 94483 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4UPbF www.vishay.com Vishay Semiconductors 100 500 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 80 400 IF = 8.0A 40 Q RR - (nC) t rr - (ns) IF = 16A 60 300 I F = 16A 200 I F = 8.0A I F = 4.0A 20 100 IF = 4.0A 0 100 di f /dt - (A/μs) 0 100 1000 1000 Fig. 16 - Typical Stored Charge vs. dIF/dt Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt 100 10000 VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/μs) VR = 200V TJ = 125°C TJ = 25°C I IRRM - (A) di f /dt - (A/μs) I F = 16A 10 IF = 8.0A I F = 4.0A 1 100 1000 di f /dt - (A/μs) Fig. 15 - Typical Recovery Current vs. dIF/dt IF = 4.0A 1000 IF = 8.0A I F = 16A 100 100 1000 di f /dt - (A/μs) Fig. 17 - Typical dI(rec)M/dt vs. dIF/dt Revision: 10-Jun-15 Document Number: 94483 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4UPbF www.vishay.com Vishay Semiconductors GATE VOLTAGE D.U.T. 10% +Vg +Vg Same type device as D.U.T. DUT VOLTAGE AND CURRENT Vce 80 % of VCE 430 µF 10% Ic Vcc Ipk 90% Ic Ic D.U.T. 5% Vce tr td(on) t2 Eon = Vce VceieIedt dt t1 ∫ t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t2 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 90% Vge trr Qrr = Ic +Vge tx 10% Vcc Vce trr id dt tx ∫ Id dt 10% Irr Vcc 90% Ic Ic 10% Vce Vpk Irr Ic 5% Ic td(off) DIODE RECOVERY WAVEFORMS tf t1+5μS Eoff = Vce Vce ic Icdtdt t1 ∫ ∫ Erec = DIODE REVERSE RECOVERY ENERGY t3 t1 t4 Vd Id dt t3 t4 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig. 18e - Macro Waveforms for Fig. 18a´s Test Circuit Revision: 10-Jun-15 Document Number: 94483 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4UPbF www.vishay.com Vishay Semiconductors D.U.T. L 1000V RL= Vc* 0 - 480V 480V 4 X IC @25°C 50V 6000μF 100V Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 1 3 Q1 D1 9 Q3 D3 4 6 Q2 D2 7 12 15 Q5 D5 10 Q4 D4 13 18 16 Q6 D6 19 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95066 Revision: 10-Jun-15 Document Number: 94483 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors IMS-2 (SIP) DIMENSIONS in millimeters (inches) Ø 3.91 (0.154) 2x 62.43 (2.458) 7.87 (0.310) 53.85 (2.120) 5.46 (0.215) 21.97 (0.865) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.38 (0.015) 3.94 (0.155) 1.27 (0.050) 4.06 ± 0.51 (0.160 ± 0.020) 5.08 (0.200) 6x 1.27 (0.050) 13 x 2.54 (0.100) 6x 3.05 ± 0.38 (0.120 ± 0.015) 0.76 (0.030) 13 x 0.51 (0.020) 6.10 (0.240) IMS-2 Package Outline (13 Pins) Notes (1) Tolerance uless otherwise specified ± 0.254 mm (0.010") (2) Controlling dimension: inch (3) Terminal numbers are shown for reference only Document Number: 95066 Revision: 30-Jul-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000