GD75PIL120C6S IGBT Module STARPOWER IGBT SEMICONDUCTORTM GD75PIL120C6S Preliminary Molding Type Module 1200V/75A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features z z z z z z z Low VCE(sat) SPT+ IGBT technology Low switching losses 10μs short circuit capability VCE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications z z z Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply ©2010 STARPOWER Semiconductor Ltd. 5/8/2010 1/9 Preliminary GD75PIL120C6S IGBT Module IGBT-inverter TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description GD75PIL120C6S Units VCES Collector-Emitter Voltage @ Tj=25℃ 1200 V VGES Gate-Emitter Voltage ±20 V 150 75 A IC Collector Current @ Tj=25℃ @ TC=25℃ @ TC=80℃ ICM Pulsed Collector Current tp=1ms 150 A Ptot Total Power Dissipation @ Tj=150℃ 595 W TSC Short Circuit Withstand Time 10 μs @ Tj=150℃ Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V(BR)CES Collector-Emitter Breakdown Voltage Tj=25℃ ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25℃ 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25℃ 400 nA 1200 V On Characteristics Symbol VGE(th) VCE(sat) Parameter Gate-Emitter Threshold Voltage Collector to Emitter Saturation Voltage Test Conditions Min. Typ. Max. Units IC=3.0mA,VCE=VGE, Tj=25℃ 5.0 6.2 7.0 V IC=75A,VGE=15V, Tj=25℃ 1.80 2.20 IC=75A,VGE=15V, Tj=125℃ 2.05 V Switching Characteristics Symbol Parameter Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Etot Total Switching Loss Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Etot Total Switching Loss Test Conditions VCC=600V,IC=75A, RG=10Ω,VGE=±15V, Tj=25℃ VCC=600V,IC=75A, RG=10Ω,VGE=±15V, Tj=125℃ ©2010 STARPOWER Semiconductor Ltd. 5/8/2010 Min. Typ. Max. Units 6.74 mJ 4.25 mJ 10.99 mJ 9.75 mJ 7.05 mJ 16.80 mJ 2/9 Preliminary GD75PIL120C6S IGBT Module td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance QG Gate charge RGint Internal Gate Resistance ISC SC Data 305 ns 67 ns 328 ns 187 ns 310 ns 67 ns 347 ns 337 ns 5.22 nF 0.40 nF 0.26 nF 780 nC 3 Ω TBD A VCC=600V,IC=75A, RG=10Ω,VGE=±15V, Tj=25℃ VCC=600V,IC=75A, RG=10Ω,VGE=±15V, Tj=125℃ VCE=25V,f=1Mhz, VGE=0V VCC=600V,IC=75A, VGE=-15…+15V TP≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V DIODE-inverter TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description VRRM Repetitive Peak Reverse Voltage IF DC Forward Current IFRM Repetitive Peak Forward Current 2 It GD75PIL120C6S Units 1200 V 75 A 150 A 1200 A2s @ Tj=25℃ tp=1ms 2 I t-value,VR=0V,tp=10ms,Tj=125℃ Characteristics Values Symbol Parameter VF Diode Forward Voltage Qrr Recovered Charge IRM Peak Reverse Recovery Current Erec Reverse Recovery Energy Test Conditions IF=75A,VGE=0V IF=75A, VR=600V, di/dt=-1600A/μs, VGE=-15V ©2010 STARPOWER Semiconductor Ltd. Typ. Max. Tj=25℃ 1.80 2.20 Tj=125℃ 1.85 Tj=25℃ 10 Tj=125℃ 19 Tj=25℃ 65 Tj=125℃ 85 Tj=25℃ 3.6 Tj=125℃ 7.5 5/8/2010 Min. 3/9 Units V μC A mJ Preliminary GD75PIL120C6S IGBT Module DIODE-rectifier TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description GD75PIL120C6S Units 1600 V VRRM Repetitive Peak Reverse Voltage IF(AV) Average On-state Current @ TC=100℃ 78 A I RMSM Maximum RMS Current at Rectifier Output @ TC=80℃ 120 A IFSM Surge Forward Current VR=0V,tp=10ms,Tj=45℃ 1100 A 6050 A2s 2 It @ Tj=25℃ 2 I t-value,VR=0V,tp=10ms,Tj=45℃ Characteristics Values Symbol Parameter Test Conditions VF Diode Forward Voltage IF=150A IR Reverse Current Tj=150℃,VR=1600V Min. Typ. Tj=150℃ Max. Units 1.28 V 2 mA IGBT-brake-chopper TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description GD75PIL120C6S Units VCES Collector-Emitter Voltage @ Tj=25℃ 1200 V VGES Gate-Emitter Voltage ±20 V 70 40 A IC Collector Current @ Tj=25℃ @ TC=25℃ @ TC=80℃ ICM Pulsed Collector Current tp=1ms 80 A Ptot Total Power Dissipation @ Tj=150℃ 305 W TSC Short Circuit Withstand Time 10 μs @ Tj=150℃ Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V(BR)CES Collector-Emitter Breakdown Voltage Tj=25℃ ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25℃ 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25℃ 400 nA ©2010 STARPOWER Semiconductor Ltd. 1200 5/8/2010 4/9 V Preliminary GD75PIL120C6S IGBT Module On Characteristics Symbol VGE(th) VCE(sat) Parameter Gate-Emitter Threshold Voltage Collector to Emitter Saturation Voltage Test Conditions Min. Typ. Max. Units IC=250μA,VCE=VGE, Tj=25℃ 4.4 5.0 6.0 V IC=40A,VGE=15V, Tj=25℃ 2.50 2.80 IC=40A,VGE=15V, Tj=125℃ 2.90 V Switching Characteristics Symbol Parameter Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Etot Total Switching Loss Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Etot Total Switching Loss td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance QG Gate charge SC Data ISC Test Conditions Min. Typ. Max. Units 3.13 mJ 3.01 mJ 6.14 mJ 4.27 mJ 4.15 mJ 8.42 mJ 55 ns 38 ns 420 ns 250 ns 3.10 nF 0.28 nF 0.12 nF VCC=600V,IC=35A, VGE=-15…+15V 255 nC TP≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V TBD A VCC=600V,IC=40A, RG=10Ω,VGE=±15V, Tj=25℃ VCC=600V,IC=40A, RG=10Ω,VGE=±15V, Tj=125℃ VCC=600V,IC=40A, RG=10Ω,VGE=±15V, Tj=125℃ VCE=30V,f=1Mhz, VGE=0V ©2010 STARPOWER Semiconductor Ltd. 5/8/2010 5/9 Preliminary GD75PIL120C6S IGBT Module DIODE-brake-chopper TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description VRRM Repetitive Peak Reverse Voltage IF DC Forward Current IFRM Repetitive Peak Forward Current 2 It GD75PIL120C6S Units 1200 V 40 A 80 A 320 A2s @ Tj=25℃ tp=1ms 2 I t-value,VR=0V,tp=10ms,Tj=125℃ Characteristics Values Symbol Parameter VF Diode Forward Voltage Qr Recovered Charge IRM Peak Reverse Recovery Current Erec Reverse Recovery Energy Test Conditions IF=40A,VGE=0V IF=40A, VR=600V, di/dt=-1000A/μs, VGE=-15V Min. Typ. Max. Tj=25℃ 2.00 2.45 Tj=125℃ 1.80 Tj=25℃ 4.3 Tj=125℃ 8.2 Tj=25℃ 44 Tj=125℃ 45 Tj=25℃ 1.50 Tj=125℃ 3.00 Units V μC A mJ Electrical Characteristics of NTC TC=25℃ unless otherwise noted Symbol Parameter R25 Rated Resistance ∆R/R Deviation of R100 P25 Power Dissipation B25/50 B-value Test Conditions Min. Typ. Max. 5.0 TC=100℃,R100=493.3Ω -5 R2=R25exp[B25/50(1/T2-1/(298.1 5K))] ©2010 STARPOWER Semiconductor Ltd. 5/8/2010 3375 6/9 Units kΩ 5 % 20.0 mW K Preliminary GD75PIL120C6S IGBT Module IGBT Module Symbol Parameter Min. VISO Isolation Voltage RMS,f=50Hz,t=1min LCE Stray Inductance RCC’+EE’ Module Lead Resistance,Terminal to Chip @ TC=25℃ RθJC Junction-to-Case (per IGBT-inverter) Junction-to-Case (per DIODE-inverter) Junction-to-Case (per DIODE-rectifier) Junction-to-Case (per IGBT-brake-chopper) Junction-to-Case (per DIODE-brake-chopper) RθCS Case-to-Sink (Conductive grease applied) Tj Maximum Junction Temperature TSTG Storage Temperature Range Mounting Torque Mounting Screw:M5 G Weight of Module ©2010 STARPOWER Semiconductor Ltd. Typ. Units 2500 V 60 nH 4.00 mΩ 0.21 0.45 0.48 0.41 0.92 0.009 K/W K/W 150 ℃ -40 125 ℃ 3.0 6.0 N.m 300 5/8/2010 Max. 7/9 g Preliminary GD75PIL120C6S IGBT Module Equivalent Circuit Schematic Package Dimension Dimensions in Millimeters ©2010 STARPOWER Semiconductor Ltd. 5/8/2010 8/9 Preliminary GD75PIL120C6S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2010 STARPOWER Semiconductor Ltd. 5/8/2010 9/9 Preliminary