GD150HFL120C2S IGBT Module STARPOWER IGBT SEMICONDUCTORTM GD150HFL120C2S Molding Type Module 1200V/150A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra Low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters. Features z z z z z z High short circuit capability, self limiting to 6*IC 10μs short circuit capability VCE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Equivalent Circuit Schematic Typical Applications z z z AC inverter drives Switching mode power supplies Electronic welders Absolute Maximum Ratings TC=25℃ unless otherwise noted Symbol VCES Description Collector-Emitter Voltage ©2011 STARPOWER Semiconductor Ltd. 2/11/2011 GD150HFL120C2S Units 1200 V 1/8 Rev.C GD150HFL120C2S Symbol IGBT Module Description VGES IC GD150HFL120C2S Units Gate-Emitter Voltage ±20 V Collector Current 300 150 A A 300 A @ TC=25℃,Tj=150℃ @ TC=80℃,Tj=150℃ ICM(1) Pulsed Collector Current IF Diode Continuous Forward Current 150 A IFM Diode Maximum Forward Current 300 A PD Maximum power Dissipation @ Tj=150℃ 1422 W TSC Short Circuit Withstand Time @ Tj=125℃ 10 μs Tj Operating Junction Temperature -40 to +150 ℃ TSTG Storage Temperature Range -40 to +125 ℃ 2 tp=1ms I t-value, Diode VR=0V,t=10ms,Tj=125℃ 4800 A2s VISO Isolation Voltage 2500 V 2.5 to 5 N.m 3 to 6 N.m Mounting Torque RMS,f=50Hz,t=1min Power Terminal Screw:M6 Mounting Screw:M6 Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Electrical Characteristics of IGBT TC=25℃ unless otherwise noted Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V(BR)CES Collector-Emitter Breakdown Voltage Tj=25℃ ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25℃ 5.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25℃ 400 nA 1200 V On Characteristics Symbol VGE(th) VCE(sat) Parameter Test Conditions Gate-Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC=6mA,VCE=VGE, Tj=25℃ Min. Typ. Max. Units 5.0 6.2 7.0 V IC=150A,VGE=15V, Tj=25℃ 1.9 IC=150A,VGE=15V, Tj=125℃ 2.1 V Switching Characteristics Symbol Parameter td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Test Conditions VCC=600V,IC=150A, RG=6.8Ω,VGE=±15V, Tj=25℃ ©2011 STARPOWER Semiconductor Ltd. 2/11/2011 Min. Typ. Max. Units 190 ns 60 ns 460 ns 2/8 Rev.C GD150HFL120C2S tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss td(on) IGBT Module 55 ns 11.2 mJ 9.8 mJ Turn-On Delay Time 220 ns tr Rise Time 60 ns td(off) Turn-Off Delay Time 530 ns tf Fall Time 75 ns Eon Turn-On Switching Loss 16.7 mJ Eoff Turn-Off Switching Loss 15.3 mJ Cies Input Capacitance 10.6 nF Coes Output Capacitance 0.71 nF Cres Reverse Transfer Capacitance 0.47 nF 650 A VCC=600V,IC=150A, RG=6.8Ω,VGE=±15V, Tj=25℃ VCC=600V,IC=150A, RG=6.8Ω,VGE=±15V, Tj=125℃ VCE=25V,f=1MHz, VGE=0V tSC≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V ISC SC Data LCE Stray inductance RCC’+EE’ Module lead resistance, terminal to chip 20 TC=25℃ nH 0.35 mΩ Electrical Characteristics of DIODE TC=25℃ unless otherwise noted Symbol Parameter VF Diode Forward Voltage Qr Diode Reverse Recovery Charge IRM Diode Peak Reverse Recovery Current Erec Reverse Recovery Energy Test Conditions IF=150A IF=150A, VR=600V, di/dt=-4800A/μs, VGE=-15V Min. Typ. Tj=25℃ 2.1 Tj=125℃ 2.2 Tj=25℃ 7 Tj=125℃ 18 Tj=25℃ 150 Tj=125℃ 190 Tj=25℃ 4 Tj=125℃ 8 Max. Units V μC A mJ Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (IGBT Part, per 1/2 Module) 0.09 K/W RθJC Junction-to-Case (DIODE Part, per 1/2 Module) 0.24 K/W RθCS Case-to-Sink (Conductive grease applied) Weight Weight of Module ©2011 STARPOWER Semiconductor Ltd. 2/11/2011 0.035 K/W 300 g 3/8 Rev.C GD150HFL120C2S Fig 1. Typical Output Characteristics Fig 3. Switching Loss vs. Collector Current ©2011 STARPOWER Semiconductor Ltd. IGBT Module Fig 2. Typical Transfer Characteristics Fig 4. Switching Loss vs. Gate Resistor 2/11/2011 4/8 Rev.C GD150HFL120C2S Fig 5. Gate Charge Characteristics. IGBT Module Fig 6. Typical Capacitance vs. Collector-Emitter Voltage Fig 7. Typical Switching Times vs. IC Fig 8. Typical Switching Times vs. Gate Resistance RG ©2011 STARPOWER Semiconductor Ltd. 2/11/2011 5/8 Rev.C GD150HFL120C2S Fig 9. Typical Forward Characteristics (diode) ©2011 STARPOWER Semiconductor Ltd. IGBT Module Fig 10. Transient thermal impedance 2/11/2011 6/8 Rev.C GD150HFL120C2S IGBT Module Package Dimension Dimensions in Millimeters ©2011 STARPOWER Semiconductor Ltd. 2/11/2011 7/8 Rev.C GD150HFL120C2S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2011 STARPOWER Semiconductor Ltd. 2/11/2011 8/8 Rev.C