Silicon MOS FETs (Small Signal) 2SK0665 (2SK665) Silicon N-Channel MOS FET (0.425) unit: mm 0.3+0.1 –0.0 For switching 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage 0.9+0.2 –0.1 ■ Features 0.9±0.1 3 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Ratings 20 8 100 200 150 150 −55 to +150 Symbol VDS VGSO ID IDP PD Tch Tstg Unit V V mA mA mW °C °C 0 to 0.1 ■ Absolute Maximum Ratings (Ta = 25°C) 1: Gate 2: Source 3: Drain EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 3O Internal Connection D R1 G R2 S ■ Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Turn-on time Turn-off time Resistance ratio R1/R2 = 1/50 Vout VGS = 5V 50Ω *2 Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200Ω VDD = 5V, VGS = 5V, RL = 200Ω min 40 20 1.5 VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω ton, toff measurement circuit *3 typ max 10 80 3.5 50 20 4.5 100 200Ω 100µF *1 Symbol IDSS IGSS VDSS Vth RDS(on)*3 | Yfs | VOH VSL R1 + R2*1 ton*2 toff*2 1 200 1 1 Unit µA µA V V Ω mS V V kΩ µs µs Pulse measurement 90% 10% Vin VDD = 5V Vout 10% 90% ton toff Note) The part number in the parenthesis shows conventional part number. 291 Silicon MOS FETs (Small Signal) 2SK0665 PD Ta ID VDS 120 120 100 160 120 80 40 100 VGS=6.0V 80 5.5V 5.0V 60 4.5V 40 4.0V Drain current ID (mA) 200 3.5V 20 80 Ta=–25˚C 25˚C 60 75˚C 40 20 3.0V 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) Forward transfer admittance |Yfs| (mS) 30 20 10 0 4 6 8 10 Gate to source voltage VGS (V) VIN IO 1000 VO=1V Ta=25˚C 300 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 Output current IO (mA) 292 8 10 0 2 100 Ciss 8 6 4 Coss 2 0 0.1 0.3 1 3 10 6 8 10 RDS(on) VGS VGS=0 f=1MHz Ta=25˚C 10 4 Gate to source voltage VGS (V) Ciss, Coss VDS 40 2 6 12 VDS=5V Ta=25˚C 0 4 Drain to source voltage VDS (V) | Yfs | VGS 50 2 30 100 Drain to source voltage VDS (V) Drain to source ON-resistance RDS(on) (Ω) 0 Input voltage VIN (V) VDS=5V Ta=25˚C Drain current ID (mA) Allowable power dissipation PD (mW) 240 ID VGS 120 ID=20mA 100 80 60 Ta=75˚C 40 25˚C –25˚C 20 0 0 2 4 6 8 10 Gate to source voltage VGS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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