ETC 2SK1103Q

Silicon Junction FETs (Small Signal)
2SK1103
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ163
unit: mm
+0.2
2.8 –0.3
+0.25
0.65±0.15
1.5 –0.05
0.65±0.15
1.45
0.95
+0.1
0.4 –0.05
0.16 –0.06
VGDS
−65
V
Drain current
ID
20
mA
Gate current
IG
10
mA
Allowable power dissipation
PD
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.1 to 0.3
0.4±0.2
0 to 0.1
Gate to Drain voltage
+0.1
Unit
0.8
Ratings
+0.2
1.1 –0.1
Symbol
3
2
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
1
0.95
+0.2
2.9 –0.05
● Low ON-resistance
● Low-noise characteristics
1.9±0.2
■ Features
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): 4L
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
IDSS*
Gate to Source leakage current
IGSS
VGS = −30V, VDS = 0
Gate to Drain voltage
VGDS
IG = −10µA, VDS = 0
Gate to Source cut-off voltage
VGSC
VDS = 10V, ID = 10µA
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 1mA, f = 1kHz
Drain to Source ON-resistance
RDS(on)
VDS = 10mV, VGS = 0
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
*
Conditions
Drain to Source cut-off current
VDS = 10V, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
min
typ
0.2
max
Unit
6
mA
−10
nA
−65
V
−1.5
1.8
2.5
−3.5
V
mS
300
Ω
7
pF
1.5
pF
IDSS rank classification
Runk
O
P
Q
R
IDSS (mA)
0.2 to 1
0.6 to 1.5
1 to 3
2.5 to 6
Marking Symbol
4LO
4LP
4LQ
4LR
1
Silicon Junction FETs (Small Signal)
PD  Ta
ID  VDS
2.5
Ta=25˚C
280
200
160
120
80
2.0
Drain current ID (mA)
2.0
240
VGS=0V
1.5
– 0.1V
– 0.2V
1.0
– 0.3V
– 0.4V
0.5
Ta=–25˚C
1.5
25˚C
1.0
75˚C
0.5
40
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
1
2
3
4
| Yfs |  VGS
4
3
IDSS=10mA
2
1
Forward transfer admittance |Yfs| (mS)
VDS=10V
Ta=25˚C
– 0.4
0
VDS=10V
Ta=25˚C
2.0
IDSS=10mA
1.5
1.0
0.5
Gate to source voltage VGS (V)
0
1
2
3
4
5
0
Ciss, Coss, Crss  VDS
0
– 0.8
–1.0 – 0.8 – 0.6 – 0.4 – 0.2
Gate to source voltage VGS (V)
| Yfs |  ID
2.5
–1.2
0
–1.2
6
Drain to source voltage VDS (V)
5
0
–1.6
5
6
Drain current ID (mA)
7
8
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
0
Forward transfer admittance |Yfs| (mS)
ID  VGS
2.5
Drain current ID (mA)
Allowable power dissipation PD (mW)
320
2
2SK1103
10
VGS=0
f=1MHz
Ta=25˚C
8
6
Ciss
4
2
Coss
Crss
0
1
3
10
30
100
Drain to source voltage VDS (V)
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2001 MAR