Datasheet

CCD area image sensors
S8980
S10810-11
Front-illuminated FFT-CCDs for X-ray imaging
The S8980 is an FFT-CCD image sensor suitable for intra-oral X-ray imaging in dental diagnosis. The S8980 has 1.5 mega
(1500 × 1000) pixels, each of which is 20 × 20 μm in size. The FOP (fiber optic plate) used as an input window is as thin as 1.5
mm, making high resolution as well as highly resistant to X-ray irradiation. The scintillator coated on the FOP is optimized to
have high X-ray sensitivity and high resolution (20 Lp/mm).
The S10810-11 is an easy-to-use X-ray imaging module using the S8980, with added functions such as a cable assembly
and X-ray trigger circuit.
Features
Applications
X-ray monitoring photodiode incorporated
Intra-oral X-ray imaging in dental diagnosis
Compact size
General X-ray imaging
High dynamic range: 12-bit
Non-destructive inspection
Long-term stability
Resolution: 20 Lp/mm
These products are components for incorporation into medical and industrial device.
1500 (H) × 1000 (V) pixel format
Pixel size: 20 × 20 μm
Coupled with FOS for X-ray imaging
100% fill factor
Low dark signal
Low readout noise
MPP operation
AC/DC X-ray source adapted
Structure
Parameter
CCD structure
Fill factor
Cooling
Number of pixels
Number of active pixels
Pixel size
Active area
Vertical clock phase
Horizontal clock phase
Output circuit
Dimensions
Window
S8980
S10810-11
Full frame transfer
100%
Non-cooled
1508 (H) × 1002 (V)
1500 (H) × 1000 (V)
20 (H) × 20 (V) μm
30 (H) × 20 (V) mm
2 phases
2 phases
Emitter follower without load resistor
35.5 (H) × 23.2 (V) mm
41.0 (H) × 26.4 (V) mm
FOS (scintillator on 1.5 mm FOP)
www.hamamatsu.com
1
CCD area image sensors
S8980, S10810-11
Absolute maximum ratings (Ta=25 °C)
Parameter
Storage temperature
Operating temperature
Total dose irradiation
OD voltage
RD voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Vcc voltage
Symbol
Tstg
Topr
D
VOD
VRD
VSG
VOG
VRG
VTG
VP1V, VP2V
VP1H, VP2H
Vcc
Min.
-20
0
-0.5
-0.5
-15
-15
-15
-15
-15
-15
0
Typ.
-
Max.
+70
+40
50
+20
+18
+15
+15
+15
+15
+15
+15
+7
Unit
°C
°C
Gy
V
V
V
V
V
V
V
V
V
Min.
12
12
-0.5
0
-9
0
-9
0
-9
0
-9
0
-9
4.75
Typ.
15
13
2
0
3
-8
3
-8
3
-8
3
-8
3
-8
5
Max.
14
5
6
-7
6
-7
6
-7
6
-7
6
-7
5.25
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Min.
0.99995
5
-
Typ.
1
60000
350
550
20
220
20
220
250
450
0.99998
8
500
75
1
2
Max.
11
-
Unit
MHz
pF
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
High
Low
High
Low
High
Low
High
Low
High
Low
+5 V power supply voltage
Symbol
VOD
VRD
VOG
Vss
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VsGH
VsGL
VRGH
VRGL
VTGH
VTGL
Vcc
Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency*1
Vertical shift register capacitance
S8980
Horizontal shift register
capacitance
S10810-11
S8980
Summing gate capacitance
S10810-11
S8980
Reset gate capacitance
S10810-11
S8980
Transfer gate capacitance
S10810-11
Charge transfer efficiency*2
DC output level*3
Output impedance*3
Power dissipation*3 *4
S8980
+5 V power supply current
S10810-11
*1:
*2:
*3:
*4:
Symbol
fc
CP1v, CP2v
CP1H, CP2H
CsG
CRG
CTG
CTE
VOut
Zo
P
Icc
pF
pF
pF
pF
V
Ω
mW
mA
In case the of the S8980, maximum frequency strongly depends on a peripheral circuit and cable length.
Measured at half of the full well capacity. CTE is defined per pixel.
VOD=15 V
Power dissipation of the on-chip amplifier
2
CCD area image sensors
S8980, S10810-11
Electrical and optical characteristics (Ta=25 °C, VOD=15 V, unless otherwise noted)
Parameter
Vertical
Horizontal
Full well capacity
Summing
CCD node sensitivity*5
Dark current (MPP mode)*6
Ta=25 °C
Readout noise*7
Ta=-40 °C
Dynamic range*8
X-ray response non-uniformity*9 *10
White spots
Point
12
defects*
Black spots
Blemish*11
Cluster defects*13
Column defects*14
X-ray resolution*9
Symbol
Min.
100
1.0
15
Fw
Sv
DS
Nr
DR
XRNU
∆R
Typ.
200
300
600
1.4
250
90
60
3333
±10
20
Max.
2500
±30
20
20
3
1
-
Unit
keμV/ee-/pixel/s
e- rms
%
Lp/mm
*5: VOD=15 V, RL (load resistor of emitter follower)=1 kΩ
*6: Dark signal doubles for every 5 to 7 °C.
*7: Operating frequency is 1 MHz.
*8: Dynamic range = Full well capacity / Readout noise
*9: X-ray irradiation of 60 kVp, measured at half of the full well capacity
*10: XRNU (%) = Noise / Signal × 100
Noise: Fixed pattern noise (peak to peak)
In the range that excludes 5 pixels from edges to the center at every position
*11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information.
*12: White spots > 10 times of Max. Dark signal (2500 e-/pixel/s)
Black spots > 50% reduction in response relative to adjacent pixels, measured at half of the full well capacity
*13: Continuous 2 to 9 point defects
*14: Continuous ≥ 10 point defects
Resolution (S10810-11)
Response (S10810-11)
(X-ray source: 70 kVp, Filter: ABS 1.5 mmt)
1.0
(X-ray source: 70 kVp, Filter: ABS 1.5 mmt)
300
0.9
Output voltage (mV)
0.8
0.7
CTF
0.6
0.5
0.4
0.3
200
100
0.2
0.1
0
0
0
2
4
6
8
10
12
14
16
18
20
Spatial frequency (line pairs/mm)
0
100
200
300
Absorbed dose (µGy)
KMPDB0355EA
KMPDB0356EA
3
CCD area image sensors
S8980, S10810-11
......
OS
OD
RD
S1499
1496
1497
S1500
1498
S1501
S1502
1499
1500
S1503
S1504
D3
VS1 VS2 VS3 VS4
D4
1 2 3 ...... 998 999 1000
2
3
......
D1
D2
S1
S2
S3
S4
S5
S6
P1V’
P2V’
TG’
SS
VS999 VS1001
VS1000 VS1002
Device structure
RG’
OG
SG’
P1H’
P2H’
X-ray irradiation
monitoring photodiode
PD
KMPDC0163EA
Pixel format
Left ← Horizontal direction → Right
Blank
2
Optical
black
2
Isolation
Effective
Isolation
1
1500
1
Optical
black
0
Blank
2
Top ← Vertical direction → Bottom
Isolation
Effective
Isolation
1
1000
1
4
CCD area image sensors
S8980, S10810-11
On-board circuit
OD
51 k
7.5 k
P1V
P2V
TG
P1H
P2H
SG
RG
OD
P1V’
10
10
0.1 µ
OG
P2V’
10
2.2 µ
RD
TG’
RD
2.2 µ
Molex 52745-1497
CCD chip
P1H’
10
10
OS
P2H’
10
Vcc
SG’
100
SS
GND
Trigger B
(S10810-11)
PD
RG’
Trigger A
(S8980)
10 k
OUT
Vcc
Trigger A
SG
P2H
P1H
Reserve
RG
RD
OD
OUT
GND
TG
P2V
P1V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
KMPDC0348EB
5
CCD area image sensors
S8980, S10810-11
Timing chart
Pre-integration period
Integration period
Readout period
AC X-ray exposure
(Trigger A)*1
DC X-ray exposure
(Trigger A)*1
Trigger B (S10810-11)*2
Tpwv
P1V
VD: Vertical dummy
VD1
1
2, 3, ... , 999, 1000, VD2
P2V, TG*3
P1H
P2H, SG
RG
OUT
Tovr
P2V, TG
Enlarged view
Tpwh, Tpws
P1H
P2H, SG
Tpwr
RG
S2, S3, S4, ... , S1502, S1503, S1504
OUT
D1
D2
S1
D3
D4
*1: Trigger A (S8980) is the same as AC/DC X-ray exposure form.
*2: Low active trigger pulse
*3: TG terminal can be short-circuited to P2V terminal.
KMPDC03
KMPDC0349EB
P1V, P2V, TG
P1H, P2H
SG
RG
TG-P1H
Parameter
Pulse width*15
Rise and fall times
Pulse width
Rise and fall times*15
Duty ratio
Pulse width
Rise and fall times
Duty ratio
Pulse width
Rise and fall times
Overlap time
Symbol
tpwv
tprv, tpfv
tpwh
tprh, tpfh
tpws
tprs, tpfs
tpwr
tprr, tpfr
tovr
Min.
30
200
100
5
100
3
10
3
18
Typ.
60
500
50
500
50
50
36
Max.
-
Unit
μs
ns
ns
ns
%
ns
ns
%
ns
ns
μs
*15: The clock pulses should be overlapped at 50% of maximum amplitude.
6
CCD area image sensors
S8980, S10810-11
Dimensional outlines (unit: mm)
S8980
35.5
30
20
23.2
1 → 14
Scintillator
Molex
52745-1497
6.55
3.6
Active area
Connector
FOP
19.5
Alumina substrate
2.0
1.0
1.5
3.1
FOS
1.7
CCD chip
KMPDA0169EE
S10810-11
Entire view
MDR connector
(3M 10136-3000PE; 36 terminals)
CCD sensor
Ferrite
Cable
2000
Pin no. 1 2
17 18
19 20
35 36
Shroud
KMPDA0244EA
* The shield of cable and the shroud of MDR connector are short-circuited.
Take due care of EMC and ESD when connected to 0 V reference and the ground.
7
CCD area image sensors
S8980, S10810-11
26.4
CCD sensor
41.0
20
5.3
9.4
3.5
Cable
6.85
30
Active area
KMPDA0245EB
Pin connections
S8980
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Symbol
Vcc
Trigger A
SG
P2H
P1H
Reserve
RG
RD
OD
OUT
GND
TG
P2V
P1V
Description
Analog power +5 V
Trigger A output
Summing gate
CCD horizontal register clock-2
CCD horizontal register clock-1
Remark
Should be opened
Reset gate
Reset drain
Output transistor drain
Signal output
Ground
Transfer gate
CCD vertical register clock-2
CCD vertical register clock-1
8
CCD area image sensors
S8980, S10810-11
S10810-11
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
GND
Vcc
SG
Trigger B
RG
NC
Reserve
NC
RD
NC
OD
NC
OUT
NC
GND
NC
P1V
Reserve
Reserve
P2H
NC
P1H
NC
GND
NC
RD
NC
OD
NC
GND
NC
OUT
NC
P2V
NC
TG
Description
Ground
+5 V power supply
Summing gate
Trigger B output
Reset gate
Remark
Same timing as P2H
Should be opened
Reset drain
Output transistor drain
Sensor output
Ground
CCD vertical register clock-1
Should be opened
Should be opened
CCD horizontal register clock-2
CCD horizontal register clock-1
Ground
Reset drain
Output transistor drain
Ground
Sensor output
CCD vertical register clock-2
Transfer gate
Same timing as P2V
9
CCD area image sensors
S8980, S10810-11
Precautions
Electrostatic countermeasures
· Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an
earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
· Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
· Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.
· Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount
of damage that occurs.
Notice
· This product is warranted for a period of 12 months after the date of the shipment.
The warranty is limited to replacement or repair of any defective product due to defects in workmanship or materials used in
manufacture. The warranty does not cover loss or damage caused by natural disaster, misuse (including modifications and any use
not complying with the environment, application, usage and storage conditions described in this datasheet), or total radiation dose
over 50 Gy (incident X-ray energy: 70 kVp) even within the warranty period.
Information described in this material is current as of April, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1123E06 Apr. 2014 DN
10
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