Schottky Barrier Diodes (SBD) MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 1.45 + 0.1 3 Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C + 0.1 0.16 − 0.06 0.1 to 0.3 0.4 ± 0.2 Unit 0 to 0.1 Rating 0.8 + 0.2 1.1 − 0.1 Symbol 0.4 − 0.05 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.95 + 0.2 • Two MA2X707s are contained in the (Mini (3-pin) type) • Large conversion gain (GC) • Small forward voltage VF • Optimum for the UHF band mixer 0.65 ± 0.15 1.5 − 0.05 0.95 2.9 − 0.05 ■ Features 1.9 ± 0.2 0.65 ± 0.15 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 JEDEC : TO-236 Anode 2 EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M2X Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Forward current (DC) IF VF = 0.5 V Reverse current (DC) IR VR = 5 V VF IF = 2 mA V(BR)R IR = 1 mA Forward voltage (DC) Reverse breakdown voltage (DC) Terminal capacitance Conversion gain*1,2 Static breakdown strength Ct VR = 0.5 V, f = 1 MHz GC Min Typ 35 Max Unit 100 mA 35 µA 0.25 V 5 V 0.65 0.85 1.05 pF RF = 890 MHz, LO = 935 MHz IF = 45 MHz −7 −5 dB C = 100 pF, Breakdown judgment point IR ≥ 35 µA 100 200 V Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 935 MHz 3. Noise index is 8.5 dB 4. Each characteristic is a standard for individual diodes 5. *1 : Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed. *2 : Set min. GC = −7 dB. Out-spec products, if any, this specification would be reviewed 1 MA3X730 Schottky Barrier Diodes (SBD) IF VF IR V R 1 0.1 0 0.2 0.4 0.6 0.8 Forward voltage VF (V) 2 1.0 Ct VR 100 Ta = 25°C Terminal capacitance Ct (pF) Ta = 25°C 10 0.01 100 Reverse current IR (µA) Forward current IF (mA) 100 10 1 0.1 0.01 0 1 2 3 4 Reverse voltage VR (V) 5 f = 1 MHz Ta = 25°C 10 1 0.1 0.01 0.01 0.1 1 Reverse voltage VR (V) 10