2um, 36V

Process Introduction
2um / 36V Bipolar Process Technology
Process features
Key Design Rules






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Up-down isolation
Deep N+ collector plug
N-channel stop
NPN transistor
Lateral PNP transistor
Implant resistor (optional)
MOS capacitor
10 Masks
Min. Width/Space(um)
Diffusion
4
Contact
2

Double metal (optional)

Applications: Analog, Power Linear
Metal
3/2
Electrical Specification
Specification
Device
Parameter
Min
Typ
Max
Unit
Hfe(Ic=100uA)
80
140
250
-
BVceo(Ic=10uA)
18
-
-
V
7.2
7.5
7.8
V
6.8
7.3
7.8
V
80
140
250
-
BVceo(Ic=10uA)
36
44
-
V
PBASE-LPNP(LV)
Hfe(Ic=10uA)
100
350
600
-
(Wb=12um without emitter guarding)
BVceo(Ic=10uA)
18
-
-
V
PBASE-LPNP(HV)
Hfe(Ic=10uA)
100
350
600
-
(Wb=12um with emitter guarding)
BVceo(Ic=10uA)
36
50
-
V
XBASE-LPNP(LV)
Hfe(Ic=10uA)
150
500
900
-
(Wb=14um without emitter guarding)
BVceo(Ic=10uA)
18
-
-
V
XBASE-LPNP(HV)
Hfe(Ic=10uA)
150
500
900
-
(Wb=16um with emitter guarding)
BVceo(Ic=10uA)
36
54
-
V
PBASE-R
190
215
240
Ω/□
Implant-R
18.4
2.3
27.6
kΩ/□
C(100x100um2)
7.9
9.3
10.7
pF
NPN (LV)
(5x7 um2 emitter)
NPN (HV)
(5x7 um2 emitter)
Sheet Resistance(20x200um2)
Capacitance (Si3N4)
BVebo(I=10uA) (without
XBASE)
BVebo(I=10uA)(with
XBASE)
Hfe(Ic=100uA)
-1-
Process Introduction
-2-
Process Introduction
-3-
Process Introduction
-4-
Process Introduction
-5-
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