Single N-channel MOSFET ELM5J400RA-S ■General description ■Features ELM5J400RA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current(Tj=150°C) Vds=30V Id=5.6A Rds(on) = 72mΩ (Vgs=10V) Rds(on) = 95mΩ (Vgs=4.5V) Ta=25°C. Unless otherwise noted. Limit Unit 30 V ±20 5.6 Id Ta=70°C Pulsed drain current Tc=25°C Tc=70°C A 1.45 0.60 - 55 to 150 Pd Junction and storage temperature range A 3.6 10 Idm Power dissipation V Tj, Tstg W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 120 ■Circuit D SOT-89(TOP VIEW) 1 2 Unit °C/W 3 Pin No. 1 2 Pin name GATE DRAIN 3 SOURCE G S 5- 1 Single N-channel MOSFET ELM5J400RA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=30V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=4.5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Gfs Vsd Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Turn-on rise time Turn-off delay time Turn-off fall time 30 V 1 Ta=85°C 30 1.0 6 Qg Qgs Qgd nA 2.5 V A 62 72 Vgs=4.5V, Id=3.6A 85 95 Vds=15V, Id=4.8A Is=2.7A, Vgs=0V 11 0.8 Vgs=0V, Vds=15V, f=1MHz Vgs=4.5V, Vds=15V Id=3.2A td(on) Vgs=4.5V, Vds=15V tr RL=5.6Ω, Id=3.2A td(off) Rgen=1Ω tf 5- 2 μA ±100 Vgs=10V, Id=5.6A Is Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit mΩ 1.2 S V 1.6 A 230 50 pF pF 20 pF 2.00 0.80 0.65 3.60 nC nC nC 10 45 12 60 ns ns 12 18 ns 20 30 ns AFN8904 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM5J400RA-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev. B Dec. 2010 www.alfa-mos.com Page 3 5- 3 AFN8904 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM5J400RA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev. B Dec. 2010 www.alfa-mos.com Page 4 5- 4 AFN8904 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM5J400RA-S Typical■Test Characteristics circuit and waveform ©Alfa-MOS Technology Corp. Rev. B Dec. 2010 www.alfa-mos.com 5- 5 Page 5