elm5j400ra

Single N-channel MOSFET
ELM5J400RA-S
■General description
■Features
ELM5J400RA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current(Tj=150°C)
Vds=30V
Id=5.6A
Rds(on) = 72mΩ (Vgs=10V)
Rds(on) = 95mΩ (Vgs=4.5V)
Ta=25°C. Unless otherwise noted.
Limit
Unit
30
V
±20
5.6
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Tc=70°C
A
1.45
0.60
- 55 to 150
Pd
Junction and storage temperature range
A
3.6
10
Idm
Power dissipation
V
Tj, Tstg
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
120
■Circuit
D
SOT-89(TOP VIEW)
1
2
Unit
°C/W
3
Pin No.
1
2
Pin name
GATE
DRAIN
3
SOURCE
G
S
5- 1
Single N-channel MOSFET
ELM5J400RA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=30V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=4.5V
Static drain-source on-resistance
Rds(on)
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Gfs
Vsd
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Turn-on rise time
Turn-off delay time
Turn-off fall time
30
V
1
Ta=85°C
30
1.0
6
Qg
Qgs
Qgd
nA
2.5
V
A
62
72
Vgs=4.5V, Id=3.6A
85
95
Vds=15V, Id=4.8A
Is=2.7A, Vgs=0V
11
0.8
Vgs=0V, Vds=15V, f=1MHz
Vgs=4.5V, Vds=15V
Id=3.2A
td(on)
Vgs=4.5V, Vds=15V
tr
RL=5.6Ω, Id=3.2A
td(off)
Rgen=1Ω
tf
5- 2
μA
±100
Vgs=10V, Id=5.6A
Is
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
mΩ
1.2
S
V
1.6
A
230
50
pF
pF
20
pF
2.00
0.80
0.65
3.60
nC
nC
nC
10
45
12
60
ns
ns
12
18
ns
20
30
ns
AFN8904
Alfa-MOS
30V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM5J400RA-S
Typical
Characteristics
■Typical
electrical and thermal characteristics
©Alfa-MOS Technology Corp.
Rev. B Dec. 2010
www.alfa-mos.com
Page 3
5- 3
AFN8904
Alfa-MOS
30V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM5J400RA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev. B Dec. 2010
www.alfa-mos.com
Page 4
5- 4
AFN8904
Alfa-MOS
30V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM5J400RA-S
Typical■Test
Characteristics
circuit and waveform
©Alfa-MOS Technology Corp.
Rev. B Dec. 2010
www.alfa-mos.com
5- 5
Page 5
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