AP2626GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
▼ Simple Drive Requirement
S1
D1
▼ Smaller Outline Package
G2
▼ Surface mount package
30V
RDS(ON)
72mΩ
ID
S2
SOT-26
▼ RoHS compliant
BVDSS
3.3A
G1
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
D2
D1
G2
G1
The SOT-26 package is universally used for all commercial-industrial
applications.
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
Rating
Units
30
V
±20
V
3
3.3
A
3
Continuous Drain Current
ID@TA=70℃
Continuous Drain Current
2.6
A
IDM
Pulsed Drain Current1
10
A
PD@TA=25℃
Total Power Dissipation
1.2
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
110
℃/W
200519062-1/4
AP2626GY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=3A
-
-
72
mΩ
VGS=4.5V, ID=2A
-
-
120
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=5V, ID=3A
-
2.8
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=3A
-
3.2
5.1
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=25V
-
0.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.7
-
nC
VDS=15V
-
3.7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
10.1
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11.8
-
ns
tf
Fall Time
RD=15Ω
-
2.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
270
pF
Coss
Output Capacitance
VDS=25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.5
0.8
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t ≦5sec ;180℃/W when mounted on min. copper pad.
2/4
AP2626GY
12
12
10 V
7.0 V
5.0 V
4.5 V
10V
7.0V
5.0V
o
T A = 150 C
ID , Drain Current (A)
ID , Drain Current (A)
o
T A =25 C
8
4
4.5V
8
4
V G = 3.0 V
V G = 3.0 V
0
0
0
1
2
0
3
1
V DS , Drain-to-Source Voltage (V)
2
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
240
1.8
ID=3A
V G = 10 V
ID=2A
T A =25 ℃
Normalized RDS(ON)
RDS(ON) (mΩ)
200
160
120
1.4
1.0
80
40
0.6
0
2
4
6
8
10
25
50
V GS , Gate-to-Source Voltage (V)
75
100
125
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
200.0
6
5
T j =150 o C
160.0
T j =25 o C
RDS(ON) (mΩ)
IS(A)
4
3
120.0
V GS =4.5V
2
80.0
V GS =10V
1
40.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0
2
4
6
8
10
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3/4
AP2626GY
ID=3A
12
V DS = 15 V
V DS = 20 V
V DS = 25 V
9
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
15
C iss
100
6
C oss
C rss
3
0
10
0
2
4
6
8
10
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
100us
ID (A)
9
V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja=180 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
12
V DS =5V
VG
ID , Drain Current (A)
9
QG
T j =25 o C
T j =150 o C
4.5V
QGS
6
QGD
3
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4