elm549407a

Single P-channel MOSFET
ELM549407A-N
■General description
■Features
ELM549407A-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-60V
Id=-4.6A
Rds(on) < 100mΩ (Vgs=-10V)
Rds(on) < 120mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Symbol
Vds
Vgs
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Ta=25°C. Unless otherwise noted.
Limit
Unit
-60
V
±20
V
-4.6
-3.8
-20
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Junction and storage temperature range
A
2.8
Pd
Tc=70°C
A
W
1.8
- 55 to 150
Tj, Tstg
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
62.5
Unit
°C/W
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
DRAIN
DRAIN
8
DRAIN
5-1
DDDD
G
S S S
Single P-channel MOSFET
ELM549407A-N
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-48V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
-60
Ta=85°C
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Static drain-source on-resistance
Rds(on)
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Gfs
Vsd
V
-0.8
-20
±100
nA
-2.5
V
A
88
100
Vgs=-4.5V, Id=-3.8A
Vds=-15V, Id=-3.2A
Is=-2A, Vgs=0V
98
12
-0.8
120
Ciss
Qg
Qgs
μA
Vgs=-10V, Id=-4.6A
Is
Coss
Crss
-1
-20
Vgs=0V, Vds=-30V, f=1MHz
Vgs=-10V, Vds=-30V, Id=-4A
Qgd
td(on)
Vgs=-10V, Vds=-30V
tr
RL=7.5Ω, Id=-3.8A
td(off)
Rgen=3Ω
tf
5-2
mΩ
-1.2
S
V
-2
A
900
pF
90
40
pF
pF
12.0
2.5
20.0
nC
nC
3.5
10
6
20
10
nC
ns
ns
30
12
45
25
ns
ns
AFP9407
Alfa-MOS
60V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
ELM549407A-N
Typical
Characteristics
■Typical
electrical and thermal characteristics
©Alfa-MOS Technology Corp.
Rev.A Mar. 2011
www.alfa-mos.com
Page 3
5-3
AFP9407
Alfa-MOS
60V P-Channel
Technology
Enhancement Mode MOSFET
Single P-channel MOSFET
ELM549407A-N
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Mar. 2011
www.alfa-mos.com
Page 4
5-4
AFP9407
Alfa-MOS
60V P-Channel
Technology
Single P-channel MOSFET
Enhancement Mode MOSFET
ELM549407A-N
Typical
Characteristics
■Test circuit
and waveform
©Alfa-MOS Technology Corp.
Rev.A Mar. 2011
www.alfa-mos.com
Page 5
5-5
Similar pages