elm16409ea

Single P-channel MOSFET
ELM16409EA-S
■General description
■Features
ELM16409EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V and internal
ESD protection.
•
•
•
•
•
•
Vds=-20V
Id=-5A (Vgs=-4.5V)
Rds(on) < 45mΩ (Vgs=-4.5V)
Rds(on) < 56mΩ (Vgs=-2.5V)
Rds(on) < 75mΩ (Vgs=-1.8V)
ESD Rating : 3000V HBM
■Maximum absolute ratings
Parameter
Drain-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-20
V
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
V
A
1
Idm
-30
A
2
Pd
2.00
1.28
W
1
Tj, Tstg
-55 to 150
°C
Id
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
±8
-5.0
-4.2
Junction and storage temperature range
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
47.5
74.0
37.0
62.5
110.0
50.0
°C/W
°C/W
°C/W
1
5
2
4
3
1
3
■Circuit
SOT-26(TOP VIEW)
6
Note
D
Pin No.
1
Pin name
DRAIN
2
3
4
DRAIN
GATE
SOURCE
5
6
DRAIN
DRAIN
4-1
G
S
Single P-channel MOSFET
ELM16409EA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
-20
-1
Vds=-16V, Vgs=0V
Ta=55°C
-5
±1
Vds=0V, Vgs=±4.5V
Gate threshold voltage
Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=-250μA
-0.30
On state drain current
Id(on) Vgs=-4.5V, Vds=-5V
-25
Rds(on)
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Rg
Qg
Qgs
Qgd
μA
μA
V
A
45
60
46
57
16
56
75
Is=-1A, Vgs=0V
-0.78
-1.00
-2.2
Vgs=0V, Vds=-10V, f=1MHz
1450
205
160
pF
pF
pF
6.5
Ω
17.2
nC
1.3
4.5
nC
nC
9
14
91
ns
ns
ns
31
33
14
ns
ns
nC
Ta=125°C
Vgs=-2.5V, Id=-4A
Vgs=-1.8V, Id=-2A
Vds=-5V, Id=-5A
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-5A
td(on)
tr
Vgs=-4.5V, Vds=-10V
td(off) RL=2Ω, Rgen=3Ω
tf
trr
Qrr
-0.55
±10
-1.00
μA
37
48
Vgs=-4.5V, Id=-5A
Static drain-source on-resistance
V
If=-5A, dIf/dt=100A/μs
If=-5A, dIf/dt=100A/μs
NOTE :
8
mΩ
S
V
A
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM16409EA-S
■Typical electrical and thermal characteristics
25
10
-4.5V
-8V
Vds=-5V
-3.0V
20
8
15
-2.5V
-Id (A)
-Id (A)
-2.0V
10
6
125°C
4
Vgs=-1.5V
5
2
0
25°C
0
0
1
2
3
4
5
0
0.5
-Vds (Volts)
Fig 1: On-Region Characteristics
80
1.5
2
1.6
Normalized On-Resistance
Vgs=-1.8V
Rds(on) (m� )
1
-Vgs (Volts)
Figure 2: Transfer Characteristics
60
Vgs=-2.5V
40
Vgs=-4.5V
Id=-4A, Vgs=-2.5V
Id=-3A, Vgs=-1.8V
1.4
1.2
Id=-5A, Vgs=-4.5V
1.0
20
0
2
4
6
8
0.8
10
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1E+01
90
1E+00
Id=-5A
-Is (A)
Rds(on) (m� )
60
125°C
40
75
100
125
150
175
125°C
1E-01
70
50
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
80
25
25°C
1E-02
1E-03
1E-04
25°C
1E-05
30
1E-06
20
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Single P-channel MOSFET
ELM16409EA-S
2400
5
Vds=-10V
Id=-5A
2000
Capacitance (pF)
-Vgs (Volts)
4
3
2
1
Ciss
1600
1200
800
Coss
400
0
0
5
10
15
Crss
0
20
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
40
Tj(max)=150°C
Ta=25°C
100�s
1ms
10ms
1s
10s
0.1s
DC
0
0.001
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
-Vds (Volts)
10
20
10
0.1
0.1
20
30
Rds(on)
limited
1.0
15
Tj(max)=150°C
Ta=25°C
10�s
Power (W)
-Id (Amps)
100.0
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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