SHENZHENFREESCALE AO4709

AO4709
Dual P-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
General Description
The AO4709 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO4709 is Pb-free
(meets ROHS & Sony 259 specifications). AO4709L is a Green Product ordering option. AO4709 and AO4709L are
electrically identical
Features
VDS (V) = -30V
ID = -8A (VGS = -10V)
RDS(ON) < 33mΩ (VGS = -10V)
RDS(ON) < 56mΩ (VGS = -4.5V)
SCHOTTKY
VDS (V) = 30V,IF = 3A, VF<[email protected]
A
S
S
G
1
2
3
4
8
7
6
5
D/K
D/K
D/K
D/K
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Pulsed Drain Current
A
TA=70°C
B
TA=25°C
Pulsed Forward Current
A
TA=70°C
B
S
A
MOSFET
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
Thermal Characteristics Schottky
Steady-State
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
A
Steady-State
Steady-State
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
±20
-8
V
-6.6
A
-40
IF
PD
Schottky
-30
IFM
TA=25°C
1/5
ID
IDM
VKA
Schottky reverse voltage
Continuous Forward Current
K
G
SOIC-8
Continuous Drain Current
D
30
4.4
V
3.2
A
3
30
3
2
2
-55 to 150
-55 to 150
°C
Typ
Max
Units
24
40
54
21
75
30
36
40
67
25
75
30
W
°C/W
°C/W
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AO4709
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
40
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-5A
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
-2
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
µA
±100
nA
-2.4
V
33
33
41
56
mΩ
-1
V
-4.2
A
14.5
-0.76
mΩ
S
920
pF
190
pF
122
pF
3.6
Ω
18.4
nC
9.3
nC
2.7
nC
Gate Drain Charge
4.9
nC
Turn-On DelayTime
7.1
ns
3.4
ns
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, ID=-8A
VGS=-10V, VDS=-15V, RL=1.8Ω,
RGEN=3Ω
18.9
ns
8.4
ns
IF=-8A, dI/dt=100A/µs
21.5
Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs
12.5
ns
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
0.45
0.5
0.007
0.05
Irm
VR=30V
VR=30V, TJ=125°C
3.2
10
VR=30V, TJ=150°C
12
37
20
CT
Units
A
24.5
TJ=125°C
gFS
Max
V
VDS=-24V, VGS=0V
IGSS
IS
Typ
Maximum reverse leakage current
Junction Capacitance
VR=15V
V
mA
pF
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating. Rev 4: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
2/5
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AO4709
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
VDS=-5V
25
20
20
-4V
-ID(A)
-ID (A)
30
-4.5V
-10V -6V
-5V
15
-3.5V
10
15
10
125°C
5
5
VGS=-3V
25°C
0
0
0
1
2
3
4
5
0
0.5
60
1.5
2
2.5
3
3.5
4
4.5
5
1.60
ID=-7.5A
50
Normalized On-Resistance
55
VGS=-4.5V
45
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
40
35
30
25
VGS=-10V
20
1.40
VGS=-10V
1.20
VGS=-4.5V
1.00
15
0.80
10
0
5
10
15
20
0
25
25
80
100
125
150
175
1.0E+01
70
1.0E+00
ID=-7.5A
60
1.0E-01
50
125°C
-IS (A)
RDS(ON) (mΩ)
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
40
30
25°C
20
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
10
1.0E-06
0
3
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/5
50
10
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4709
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=-15V
ID=-8A
1250
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
0
0
4
8
12
16
0
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
15
25
30
30
100µs
0.1s
20
T J(Max)=150°C
T A=25°C
10µs
RDS(ON)
limited
1ms
10ms
1.0
10
40
T J(Max)=150°C, T A=25°C
10.0
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
100.0
-ID (Amps)
Crss
250
1s
20
10
10s
DC
0.1
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
T on
T
Single Pulse
0.01
0.00001
4/5
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
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AO4709
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
250
10
f = 1MHz
Capacitance (pF)
1
IF (Amps)
200
125°C
0.1
0.01
150
100
50
25°C
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
100
0.6
Leakage Current (mA)
IF=3A
0.5
VF (Volts)
5
0.4
IF=1A
0.3
0.2
10
1
VR=30V
0.1
0.01
0.001
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Z θJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
5/5
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1000