AOSMD AO4707

AO4707
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO4707 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters. Standard Product AO8820 is Pb-free
(meets ROHS & Sony 259 specifications). AO8820L
is a Green Product ordering option. AO8820 and
AO8820L are electrically identical.
A
S
S
G
1
2
3
4
8
7
6
5
VDS (V) = -30V
ID = -8A (VGS = -10V)
RDS(ON) < 33mΩ (VGS = -10V)
RDS(ON) < 56mΩ (VGS = -4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<[email protected]
D/K
D/K
D/K
D/K
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Pulsed Drain Current
A
TA=70°C
B
Schottky reverse voltage
TA=25°C
Pulsed Forward Current
ID
IDM
VKA
Continuous Forward Current
K
S
A
G
SOIC-8
Continuous Drain Current
D
A
TA=70°C
B
MOSFET
TA=70°C
Power Dissipation
±20
-8
V
-6.6
A
-40
IF
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
C
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Steady-State
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
A
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
PD
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
IFM
TA=25°C
Schottky
-30
30
5
V
3.5
A
3
30
3
2
2
-55 to 150
-55 to 150
°C
Typ
Max
Units
24
40
54
21
75
30
36
40
67
25
75
30
W
°C/W
°C/W
AO4707
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
40
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-5A
gFS
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
-2
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-8A
Units
µA
±100
nA
-2.4
V
A
24.5
TJ=125°C
VSD
Max
V
VDS=-24V, VGS=0V
IGSS
IS
Typ
33
33
41
56
mΩ
-1
V
-4.2
A
14.5
-0.76
mΩ
S
920
pF
190
pF
122
pF
3.6
Ω
18.4
nC
9.3
nC
2.7
nC
Qgd
Gate Drain Charge
4.9
nC
tD(on)
Turn-On DelayTime
7.1
ns
tr
Turn-On Rise Time
3.4
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, RL=1.8Ω,
RGEN=3Ω
18.9
ns
8.4
ns
IF=-8A, dI/dt=100A/µs
21.5
Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs
12.5
ns
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=3.0A
0.48
0.52
0.07
0.15
Irm
VR=24V
VR=24V, TJ=125°C
4.2
20
VR=24V, TJ=150°C
15
120
60
CT
Maximum reverse leakage current
Junction Capacitance
VR=15V
V
mA
pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev4: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4707
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
30
-4.5V
-6V
-5V
20
20
-4V
-ID(A)
-ID (A)
VDS=-5V
25
15
-3.5V
10
15
10
5
125°C
5
VGS=-3V
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
60
1.60
RDS(ON) (mΩ)
Normalized On-Resistance
ID=-7.5A
50
VGS=-4.5V
40
30
VGS=-10V
20
10
0
5
10
15
20
25
1.40
1.20
VGS=-4.5V
1.00
0.80
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
80
70
1.0E+00
ID=-7.5A
60
1.0E-01
50
125°C
-IS (A)
RDS(ON) (mΩ)
VGS=-10V
40
30
25°C
20
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
10
0
1.0E-06
3
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4707
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=-15V
ID=-8A
1250
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
0
0
4
8
12
16
0
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
15
25
30
30
100µs
0.1s
20
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
1ms
10ms
1.0
10
40
TJ(Max)=150°C, T A=25°C
10.0
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
100.0
-ID (Amps)
Crss
250
1s
20
10
10s
DC
0.1
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
AO4707
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
600
10
125°C
Capacitance (pF)
IF (Amps)
1
0.1
25°C
0.01
f = 1MHz
500
400
300
200
100
0.001
0.0
0.2
0.4
0.6
0
0.8
0
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
VF (Volts)
Figure 12: Schottky Forward Characteristics
0.7
1.0E-01
0.6
IF=5A
Leakage Current (A)
VF (Volts)
5
0.5
0.4
IF=3A
0.3
0.2
1.0E-02
1.0E-03
VR=24V
1.0E-04
1.0E-05
1.0E-06
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
Alpha & Omega Semiconductor, Ltd.
0.01
0.1
1
T
10
100
1000