elm34608aa

Complementary MOSFET
ELM34608AA-N
■General Description
■Features
ELM34608AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
•
•
•
•
N-channel
P-channel
Vds=60V
Id=4.5A
Rds(on) < 58mΩ(Vgs=10V)
Rds(on) < 85mΩ(Vgs=4.5V)
Vds=-60V
Id=-3.5A
Rds(on) < 90mΩ(Vgs=-10V)
Rds(on) < 135mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Symbol
Vds
Drain-source voltage
Gate-source voltage
Vgs
±20
4.5
4.0
±20
-3.5
-3.0
V
Idm
20
-20
A
Pd
2.0
1.3
2.0
1.3
W
Tj,Tstg
-55 to 150
-55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
60
-60
V
A
3
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
Device
N-ch
Maximum junction-to-ambient
Rθja
P-ch
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Typ.
Max.
62.5
Unit
°C/W
62.5
°C/W
Note
■Circuit
Pin No.
Pin name
1
2
SOURCE1
GATE1
3
4
5
SOURCE2
GATE2
DRAIN2
6
7
8
DRAIN2
DRAIN1
DRAIN1
7-1
• N-ch
• P-ch
D1
G1
D2
G2
S1
S2
Complementary MOSFET
ELM34608AA-N
■Electrical Characteristics (N-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Conditions
BVdss Id=250μA, Vgs=0V
Vds=40V, Vgs=0V, Ta=55°C
10
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Static drain-source on-resistance
Rds(on)
Pulsed current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V
1
Idss
Max.body-diode continuous current
60
Vds=48V, Vgs=0V
Zero gate voltage drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
±100
nA
2.5
V
A
1
mΩ
1
1
S
V
1
1
Is
1.3
A
Ism
2.6
A
Gfs
Vsd
Vds=0V, Vgs=±20V
μA
1.0
20
1.5
Vgs=10V, Id=4.5A
42
58
Vgs=4.5V, Id=4A
55
85
Vds=10V, Id=4.5A
If=Is=1.3A, Vgs=0V
14
Ciss
650
pF
Coss Vgs=0V, Vds=25V, f=1MHz
Crss
80
35
pF
pF
Qg
Qgs
Vgs=10V, Vds=30V, Id=4.5A
Qgd
td(on)
tr
12.0
2.4
16.0
2.6
Vgs=10V, Vds=30V, Id=1A
td(off) Rgen=6Ω
tf
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
7-2
3
nC
nC
2
2
2
2
11
8
20
nC
ns
18
ns
2
19
35
ns
2
6
15
ns
2
NIKO-SEM
P5806NVG
N- & Complementary
P-Channel Enhancement
Mode
MOSFET
Field Effect Transistor
SOP-8
Lead-Free
ELM34608AA-N
■Typical Electrical and Thermal Characteristics (N-ch)
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
Is - Reverse Drain Current(A)
10
T A = 125° C
1
25° C
0.1
-55° C
0.01
0.001
0.0001
0
0.6
0.2
0.4
0.8
VSD - Body Diode Forward Voltage(V)
1.0
1.2
7-3
4
Oct-01-2004
NIKO-SEM
Complementary MOSFET
N- & P-Channel Enhancement Mode
ELM34608AA-N
Field
Effect Transistor
7- 4
P5806NVG
SOP-8
Lead-Free
Complementary MOSFET
ELM34608AA-N
■Electrical Characteristics (P-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Conditions
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-40V, Vgs=0V, Ta=55°C
-10
Vds=0V, Vgs=±20V
nA
-2.5
V
A
1
mΩ
1
-1
S
V
1
1
Is
-1.3
A
Ism
-2.6
A
Rds(on)
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gfs
Vsd
-1.0
-20
-1.5
Vgs=-10V, Id=-3.5A
70
90
Vgs=-4.5V, Id=-3A
100
135
Vds=-5V, Id=-3.5A
If=Is=-1.3A, Vgs=0V
9
Ciss
630
pF
Coss Vgs=0V, Vds=-30V, f=1MHz
Crss
81
33
pF
pF
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
μA
±100
Static drain-source on-resistance
Pulsed current
DYNAMIC PARAMETERS
Input capacitance
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Max.body-diode continuous current
-60
Vds=-48V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Vgs=-10V, Vds=-30V
Id=-3.5A
Vgs=-10V, Vds=-30V
td(off) Id=-1A, Rgen=6Ω
tf
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
7-5
11.0
2.1
15.0
3
nC
nC
2
2
2
2
2.5
6
13
nC
ns
8
18
ns
2
17
31
ns
2
11
20
ns
2
NIKO-SEM
P5806NVG
N- & Complementary
P-Channel Enhancement
Mode
MOSFET
Field Effect Transistor
SOP-8
Lead-Free
ELM34608AA-N
■Typical Electrical and Thermal Characteristics (P-ch)
Body Diode Forward Voltage Variation with Source Current and Temperature
100
-Is - Reverse Drain Current(A)
V GS = 0V
10
1
T A = 125° C
0.1
25° C
-55° C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
-VSD - Body Diode Forward Voltage(V)
1.2
1.4
7-6
6
Oct-01-2004
NIKO-SEM
MOSFETMode
N-Complementary
& P-Channel Enhancement
ELM34608AA-N
Field
Effect Transistor
P5806NVG
SOP-8
Lead-Free
7-7
7
Oct-01-2004
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