Complementary MOSFET ELM34608AA-N ■General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V) Vds=-60V Id=-3.5A Rds(on) < 90mΩ(Vgs=-10V) Rds(on) < 135mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol Vds Drain-source voltage Gate-source voltage Vgs ±20 4.5 4.0 ±20 -3.5 -3.0 V Idm 20 -20 A Pd 2.0 1.3 2.0 1.3 W Tj,Tstg -55 to 150 -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note 60 -60 V A 3 ■Thermal Characteristics Parameter Maximum junction-to-ambient Symbol Rθja Device N-ch Maximum junction-to-ambient Rθja P-ch ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. Max. 62.5 Unit °C/W 62.5 °C/W Note ■Circuit Pin No. Pin name 1 2 SOURCE1 GATE1 3 4 5 SOURCE2 GATE2 DRAIN2 6 7 8 DRAIN2 DRAIN1 DRAIN1 7-1 • N-ch • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM34608AA-N ■Electrical Characteristics (N-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=250μA, Vgs=0V Vds=40V, Vgs=0V, Ta=55°C 10 Gate-body leakage current Gate threshold voltage On state drain current Igss Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Pulsed current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time V 1 Idss Max.body-diode continuous current 60 Vds=48V, Vgs=0V Zero gate voltage drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note ±100 nA 2.5 V A 1 mΩ 1 1 S V 1 1 Is 1.3 A Ism 2.6 A Gfs Vsd Vds=0V, Vgs=±20V μA 1.0 20 1.5 Vgs=10V, Id=4.5A 42 58 Vgs=4.5V, Id=4A 55 85 Vds=10V, Id=4.5A If=Is=1.3A, Vgs=0V 14 Ciss 650 pF Coss Vgs=0V, Vds=25V, f=1MHz Crss 80 35 pF pF Qg Qgs Vgs=10V, Vds=30V, Id=4.5A Qgd td(on) tr 12.0 2.4 16.0 2.6 Vgs=10V, Vds=30V, Id=1A td(off) Rgen=6Ω tf NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7-2 3 nC nC 2 2 2 2 11 8 20 nC ns 18 ns 2 19 35 ns 2 6 15 ns 2 NIKO-SEM P5806NVG N- & Complementary P-Channel Enhancement Mode MOSFET Field Effect Transistor SOP-8 Lead-Free ELM34608AA-N ■Typical Electrical and Thermal Characteristics (N-ch) Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V Is - Reverse Drain Current(A) 10 T A = 125° C 1 25° C 0.1 -55° C 0.01 0.001 0.0001 0 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage(V) 1.0 1.2 7-3 4 Oct-01-2004 NIKO-SEM Complementary MOSFET N- & P-Channel Enhancement Mode ELM34608AA-N Field Effect Transistor 7- 4 P5806NVG SOP-8 Lead-Free Complementary MOSFET ELM34608AA-N ■Electrical Characteristics (P-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-40V, Vgs=0V, Ta=55°C -10 Vds=0V, Vgs=±20V nA -2.5 V A 1 mΩ 1 -1 S V 1 1 Is -1.3 A Ism -2.6 A Rds(on) Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gfs Vsd -1.0 -20 -1.5 Vgs=-10V, Id=-3.5A 70 90 Vgs=-4.5V, Id=-3A 100 135 Vds=-5V, Id=-3.5A If=Is=-1.3A, Vgs=0V 9 Ciss 630 pF Coss Vgs=0V, Vds=-30V, f=1MHz Crss 81 33 pF pF Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time μA ±100 Static drain-source on-resistance Pulsed current DYNAMIC PARAMETERS Input capacitance V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max.body-diode continuous current -60 Vds=-48V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=-10V, Vds=-30V Id=-3.5A Vgs=-10V, Vds=-30V td(off) Id=-1A, Rgen=6Ω tf NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 7-5 11.0 2.1 15.0 3 nC nC 2 2 2 2 2.5 6 13 nC ns 8 18 ns 2 17 31 ns 2 11 20 ns 2 NIKO-SEM P5806NVG N- & Complementary P-Channel Enhancement Mode MOSFET Field Effect Transistor SOP-8 Lead-Free ELM34608AA-N ■Typical Electrical and Thermal Characteristics (P-ch) Body Diode Forward Voltage Variation with Source Current and Temperature 100 -Is - Reverse Drain Current(A) V GS = 0V 10 1 T A = 125° C 0.1 25° C -55° C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 7-6 6 Oct-01-2004 NIKO-SEM MOSFETMode N-Complementary & P-Channel Enhancement ELM34608AA-N Field Effect Transistor P5806NVG SOP-8 Lead-Free 7-7 7 Oct-01-2004