Single N-channel MOSFET ELM33408CA-S ■General description ■Features ELM33408CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=20V Id=3A Rds(on) < 50.8mΩ (Vgs=4.5V) Rds(on) < 100mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Symbol Vgs Gate-source voltage Continuous drain current Ta=25°C. Unless otherwise noted. Limit Unit Note ±16 V Ta=25°C Ta=100°C 3 2 20 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=100°C Junction and storage temperature range Tj, Tstg A A 0.6 3 W 0.5 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Symbol Steady-state Steady-state Rθjc Rθja ■Pin configuration Typ. Max. Unit 65 230 °C/W °C/W ■Circuit D SOT-23(TOP VIEW) 3 1 2 Note Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Single N-channel MOSFET ELM33408CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=16V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±16V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Ism Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=10V Vsd Is 20 Vds=16V, Vgs=0V Gate threshold voltage On state drain current Diode forward voltage Max. body-diode continuous current Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 0.45 6 0.75 μA ±100 nA 1.20 V A Vgs=4.5V, Id=3A 42.0 Vgs=2.5V, Id=1.5A 60.0 100.0 mΩ If=Is, Vgs=0V 50.8 mΩ 1 1 1.3 2.3 V A 1 4.6 A 3 450 100 pF pF Crss 60 pF Qg Qgs Qgd 12.0 3.0 4.5 25.0 nC nC nC 2 2 2 td(on) tr Vgs=4.5V, Vds=10V, Id=1A 6 5 12 10 ns ns 2 2 td(off) RL=1Ω, Rgen=0.2Ω 16 40 ns 2 5 20 ns 2 Vgs=0V, Vds=15V, f=1MHz Vgs=4.5V, Vds=10V, Id=3A tf NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 NIKO-SEM Single N-channel MOSFET P5002CMG N-Channel Logic Level Enhancement Mode ELM33408CA-S Field Effect Transistor SOT-23 Lead-Free ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 VGS= 0V Is - Reverse Drain Current(A) 10 4-3 25° C 0.1 -55° C 0.01 0.001 0.0001 3 T = 125° C 1 0 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage(V) 1.0 1.2 Mar-22-2006 NIKO-SEM SingleLogic N-channel MOSFETMode N-Channel Level Enhancement Field Effect Transistor ELM33408CA-S 4 4-4 P5002CMG SOT-23 Lead-Free Mar-22-2006