elm33408ca

Single N-channel MOSFET
ELM33408CA-S
■General description
■Features
ELM33408CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=20V
Id=3A
Rds(on) < 50.8mΩ (Vgs=4.5V)
Rds(on) < 100mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Symbol
Vgs
Gate-source voltage
Continuous drain current
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
±16
V
Ta=25°C
Ta=100°C
3
2
20
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=100°C
Junction and storage temperature range
Tj, Tstg
A
A
0.6
3
W
0.5
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Steady-state
Steady-state
Rθjc
Rθja
■Pin configuration
Typ.
Max.
Unit
65
230
°C/W
°C/W
■Circuit
D
SOT-23(TOP VIEW)
3
1
2
Note
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
4-1
Single N-channel MOSFET
ELM33408CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=16V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±16V
Static drain-source on-resistance
Rds(on)
Pulsed body-diode current
DYNAMIC PARAMETERS
Ism
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=10V
Vsd
Is
20
Vds=16V, Vgs=0V
Gate threshold voltage
On state drain current
Diode forward voltage
Max. body-diode continuous current
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
0.45
6
0.75
μA
±100
nA
1.20
V
A
Vgs=4.5V, Id=3A
42.0
Vgs=2.5V, Id=1.5A
60.0 100.0 mΩ
If=Is, Vgs=0V
50.8
mΩ
1
1
1.3
2.3
V
A
1
4.6
A
3
450
100
pF
pF
Crss
60
pF
Qg
Qgs
Qgd
12.0
3.0
4.5
25.0
nC
nC
nC
2
2
2
td(on)
tr
Vgs=4.5V, Vds=10V, Id=1A
6
5
12
10
ns
ns
2
2
td(off) RL=1Ω, Rgen=0.2Ω
16
40
ns
2
5
20
ns
2
Vgs=0V, Vds=15V, f=1MHz
Vgs=4.5V, Vds=10V, Id=3A
tf
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
NIKO-SEM
Single N-channel MOSFET
P5002CMG
N-Channel Logic Level Enhancement Mode
ELM33408CA-S
Field
Effect Transistor
SOT-23
Lead-Free
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
VGS= 0V
Is - Reverse Drain Current(A)
10
4-3
25° C
0.1
-55° C
0.01
0.001
0.0001
3
T = 125° C
1
0
0.6
0.2
0.4
0.8
VSD - Body Diode Forward Voltage(V)
1.0
1.2
Mar-22-2006
NIKO-SEM
SingleLogic
N-channel
MOSFETMode
N-Channel
Level Enhancement
Field Effect Transistor
ELM33408CA-S
4
4-4
P5002CMG
SOT-23
Lead-Free
Mar-22-2006
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