Dual N-channel MOSFET ELM34808AA-N ■General description ■Features ELM34808AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current 7 6 20 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg A A 2.0 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Typ. Rθja ■Pin configuration Max. Unit 62.5 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 3 SOURCE1 GATE1 SOURCE2 4 5 6 GATE2 DRAIN2 DRAIN2 7 8 DRAIN1 DRAIN1 4-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM34808AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V nA 2.5 V A 1 mΩ 1 1 S V 1 1 Is 1.3 A Ism 2.6 A Rds(on) Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gfs Vsd Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr 1.0 20 1.5 Vgs=10V, Id=7A 18 25 Vgs=4.5V, Id=6A 25 37 Vds=5V, Id=7A If=1A, Vgs=0V 19 Ciss Qg Qgs Turn-off fall time μA ±100 Static drain-source on-resistance Pulsed current DYNAMIC PARAMETERS Input capacitance V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Max.body-diode continuous current 30 Vds=24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=10V, f=1MHz Vgs=10V, Vds=15V, Id=7A Vgs=10V, Vds=10V, Id=1A td(off) Rgen=6Ω tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 3 790 pF 175 65 pF pF 16.0 2.5 nC nC 2 2 2.1 2.2 4.4 nC ns 2 2 7.5 15.0 ns 2 11.8 21.3 ns 2 3.7 7.4 ns 2 NIKO-SEM P2503HVG Dual N-Channel Enhancement Mode Field Effect Transistor Dual N-channel MOSFET SOP-8 Lead Free ELM34808AA-N ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125° C Is - Reverse Drain Current(A) 10 -55° C 0.1 0.01 0.001 4-3 25° C 1 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 NIKO-SEM Dual N-channel MOSFET Dual N-Channel Enhancement Mode ELM34808AA-N Field Effect Transistor 4-4 P2503HVG SOP-8 Lead Free