elm14803ab

Dual P-channel MOSFET
ELM14803AB-N
■General description
■Features
ELM14803AB-N uses advanced trench technology to
provide excellent Rds(on) and low gate charge.
•
•
•
•
Vds=-30V
Id=-5A (Vgs=-10V)
Rds(on) < 46mΩ (Vgs=-10V)
Rds(on) < 74mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
Symbol
Vds
Gate-source voltage
Vgs
±20
V
Id
-5
-4
A
Idm
Ias, Iar
Eas, Ear
-30
17
14
A
A
mJ
3
3
3
W
2
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Pd
Tj, Tstg
2.0
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Typ.
Max.
Unit
Note
48.0
74.0
35.0
62.5
110.0
40.0
°C/W
°C/W
°C/W
1
1, 4
■Circuit
Pin No.
1
Pin name
SOURCE2
2
3
GATE2
SOURCE1
4
5
GATE1
DRAIN1
6
7
8
DRAIN1
DRAIN2
DRAIN2
6-1
D2
D1
G2
G1
S1
S2
Dual P-channel MOSFET
ELM14803AB-N
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-30V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Rds(on)
Vgs=-10V, Id=-5A
Forward transconductance
Gfs
Diode forward voltage
Vsd
Is=-1A, Vgs=0V
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Qg
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
NOTE :
-1
-5
μA
±100
nA
-1.5
-30
-2.0
-2.5
V
A
32
46
Ta=125°C
48
51
13
68
74
-0.7
-1.0
V
-2.5
A
Is
Input capacitance
Output capacitance
Total gate charge (4.5V)
Gate-source charge
V
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Vgs=-4.5V, Id=-4A
Vds=-5V, Id=-5A
Max. body-diode continuous current
DYNAMIC PARAMETERS
-30
mΩ
S
Vgs=0V, Vds=-15V, f=1MHz
520
100
pF
pF
Vgs=0V, Vds=0V, f=1MHz
65
7.5
pF
Ω
Vgs=-10V, Vds=-15V
Id=-5A
3.5
9.2
4.6
1.6
11.5
11.0
6.0
nC
nC
nC
2.2
7.5
nC
ns
Vgs=-10V, Vds=-15V
5.5
ns
td(off) RL=3Ω, Rgen=3Ω
tf
trr
If=-5A, dIf/dt=100A/μs
19.0
7.0
11.0
ns
ns
ns
5.3
nC
Qrr
If=-5A, dIf/dt=100A/μs
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air
environment with Ta=25°C. The value in any given application depends on the user's specific board design.
2. The power dissipation Pd is based on Tj(max)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature Tj(max)=150°C. Ratings are based on low frequency
and duty cycles to keep initial Tj=25°C.
4. The Rθja is the sum of the thermal impedence from junction to lead Rθjal and lead to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted
on 1in² FR-4 board with 2oz. Copper, assuming a maximum junction temperature of Tj(max)=150°C. The SOA curve
provides a single pulse rating.
6-2
Dual P-channel MOSFET
AO4803A
ELM14803AB-N
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
40
-10V
35
-8V
-6V
30
-5V
20
-ID(A)
-ID (A)
25
VGS=-4.5V
20
15
10
15
10
-4V
5
VDS=-5V
25
125�C
5
VGS=-3.5V
0
0
0
1
2
3
4
0.5
5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note 5)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note 5)
80
1.8
Normalized On-Resistance
70
VGS=-4.5V
60
RDS(ON) (mΩ
Ω)
25�C
50
40
30
VGS=-10V
20
VGS=-10V
ID=-5A
1.6
1.4
17
5
VGS=-4.5V
ID=-4A2
10
1.2
1
0.8
10
0
2
4
6
8
0
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note )5)
120
25
50
75
100
125
150
175
1.0
1.2
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note )5)
1.0E+02
ID=-5A
1.0E+01
100
40
80
125�C
60
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125�C
1.0E-01
25�C
1.0E-02
1.0E-03
40
1.0E-04
25�C
20
2
1.0E-05
0.0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note 5)
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note 5)
6-3
AO4803A
Dual P-channel MOSFET
ELM14803AB-N
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=110�C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note )6)
6-4
100
1000
AO4803A
Dual P-channel MOSFET
ELM14803AB-N
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
VDS=-15V
ID=-5A
700
Ciss
600
Capacitance (pF)
-VGS (Volts)
8
6
4
2
500
400
300
Coss
200
100
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
TA=25�C
10
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
TA=100�C
10µs
TA=150�C
10.0
TA=125�C
-ID (Amps)
-IAR (A) Peak Avalanche Current
Crss
0
10.0
RDS(ON)
limited
100µs
1.0
1ms
10ms
0.1
DC
TJ(Max)=150�C
TA=25�C
10s
0.0
1.0
0.01
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability (Note )3)
0.1
1
10
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note )6)
100
10000
TA=25�C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note 6)
6-5
1000
Dual P-channel MOSFET
ELM14803AB-N
AO4803A
■Test circuit & waveform
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
+
VDC
-
Qgd
Qgs
Vds
+
VDC
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vgs
DUT
Vgs
VDC
-
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
toff
ton
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
Vgs
VDC
-
Vgs
+
Rg
Vdd
BVDSS
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Vgs
L
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt
-I RM
-Vds
6-6
Vdd
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