elm544539a

Complementary MOSFET
ELM544539A-N
■General Description
■Features
ELM544539A-N uses advanced trench technology
to provide excellent Rds(on) and low gate charge.
• N-channel
Vds=30V, Id=5.0A, Rds(on)=36mΩ(Vgs=10V)
Vds=30V, Id=4.7A, Rds(on)=46mΩ(Vgs=4.5V)
• P-channel
Vds=-30V, Id=-5.4A, Rds(on)=62mΩ(Vgs=-10V)
Vds=-30V, Id=-4.2A, Rds(on)=90mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
30
±20
-30
±20
5.4
4.0
20
-5.4
-4.2
-30
Pd
2.8
1.8
2.8
1.8
W
Tj,Tstg
-55 to 150
-55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Idm
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
V
V
A
A
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
Device
Rθja
Rθja
N-ch
P-ch
Steady-state
Steady-state
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Typ.
Max.
Unit
62.5
62.5
°C/W
°C/W
■Circuit
Pin No.
1
2
Pin name
SOURCE1
GATE1
3
4
5
SOURCE2
GATE2
DRAIN2
6
7
DRAIN2
DRAIN1
8
DRAIN1
8-1
• N-ch
• P-ch
D1
G1
D2
G2
S1
S2
Complementary MOSFET
ELM544539A-N
■Electrical Characteristics (N-ch)
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
BVdss Id=250μA, Vgs=0V
Idss
Vds=24V, Vgs=0V
30
1
Ta=85°C
30
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
1.3
On state drain current
Id(on) Vgs=4.5V, Vds=5V
10
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS
30
40
Gfs
Vsd
Vds=15V, Id=5.2A
Is=1.6A, Vgs=0V
13
0.8
Is
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Qg
Qgs
Qgd
Vgs=0V, Vds=20V, f=1MHz
μA
nA
V
A
Vgs=10V, Id=5.0A
Vgs=4.5V, Id=4.7A
Ciss
Turn-on rise time
Turn-off delay time
Turn-off fall time
±100
2.1
Rds(on)
Input capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
36
46
mΩ
1.3
S
V
1.5
A
700
pF
75
45
pF
pF
12.0
Vgs=4.5V, Vds=20V, Id=5.2A
8.0
1.6
2.4
nC
nC
nC
td(on)
tr
Vgs=10V, Vds=15V, Id=1.0A
td(off) RL=15Ω, Rgen=6Ω
8
12
28
12
18
40
ns
ns
ns
10
18
ns
tf
8-2
AFC4539WS
Alfa-MOS
30V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM544539A-N
Typical
Characteristics
( N-Channel
)
■Typical
Electrical and
Thermal Characteristics
(N-ch)
©Alfa-MOS Technology Corp.
Rev.A July 2010
www.alfa-mos.com
Page 4
8-3
AFC4539WS
Alfa-MOS
30V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM544539A-N
Typical Characteristics ( N-Channel )
©Alfa-MOS Technology Corp.
Rev.A July 2010
www.alfa-mos.com
Page 5
8-4
Complementary MOSFET
ELM544539A-N
■Electrical Characteristics (P-ch)
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
BVdss Id=-250μA, Vgs=0V
Idss
Vds=-24V, Vgs=0V
-30
-1
Ta=85°C
-30
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA
-1.0
On state drain current
Id(on) Vgs=-10V, Vds=-5V
-25
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
52
70
Gfs
Vsd
Vds=-10V, Id=-4.9A
Is=-1.7A, Vgs=0V
10
-0.8
Is
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Qg
Qgs
Qgd
Vgs=0V, Vds=-15V, f=1MHz
Vgs=-10V, Vds=-15V
Id=-5.0A
td(on)
tr
Vgs=-10V, Vds=-15V
td(off) Id=-1.0A, RL=15Ω, Rgen=6Ω
tf
8-5
μA
nA
V
A
Vgs=-10V, Id=-5.4A
Vgs=-4.5V, Id=-4.2A
Ciss
Turn-on rise time
Turn-off delay time
Turn-off fall time
±100
-2.5
Rds(on)
Input capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
V
62
90
mΩ
-1.3
S
V
-1.7
A
500
pF
100
55
pF
pF
10.0
1.6
3.0
18.0
nC
nC
nC
8
8
25
18
18
50
ns
ns
ns
25
35
ns
AFC4539WS
Alfa-MOS
30V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM544539A-N
■Typical
Electrical and
Thermal Characteristics
(P-ch)
Typical
Characteristics
( P-Channel
)
©Alfa-MOS Technology Corp.
Rev.A July 2010
www.alfa-mos.com
Page 6
8-6
AFC4539WS
Alfa-MOS
30V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM544539A-N
Typical Characteristics ( P-Channel )
©Alfa-MOS Technology Corp.
Rev.A July 2010
www.alfa-mos.com
Page 7
8-7
AFC4539WS
Alfa-MOS
30V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM544539A-N
■Test
circuit and waveform
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.A July 2010
www.alfa-mos.com
Page 8
8-8
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