elm18801ba

Dual P-channel MOSFET
ELM18801BA-S
■General description
■Features
ELM18801BA-S uses advanced trench technology to
provide excellent Rds(on) and low gate charge. Internal
ESD protection is included.
•
•
•
•
•
•
Vds=-20V
Id=-4.7A (Vgs=-4.5V)
Rds(on) < 42mΩ (Vgs=-4.5V)
Rds(on) < 53mΩ (Vgs=-2.5V)
Rds(on) < 70mΩ (Vgs=-1.8V)
ESD Rating : 3000V HBM
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Vds
Vgs
-20
±8
V
V
Id
-4.7
-3.7
A
1
Idm
-30
A
2
Pd
1.4
0.9
W
1
Tj, Tstg
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Rθja
Maximum junction-to-lead
Steady-state
Rθjl
■Pin configuration
Typ.
73
96
Max.
90
125
Unit
°C/W
°C/W
Note
63
75
°C/W
3
1
■Circuit
TSSOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
DRAIN1
SOURCE1
3
SOURCE1
4
5
6
GATE1
GATE2
SOURCE2
7
8
SOURCE2
DRAIN2
4-1
D2
D1
G2
G1
S1
S2
Dual P-channel MOSFET
ELM18801BA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
-20
-1
Vds=-16V
Vgs=0V
Ta=55°C
-5
±1
Vds=0V, Vgs=±4.5V
Gate threshold voltage
Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=-250μA
-0.30
On state drain current
Id(on) Vgs=-4.5V, Vds=-5V
-25
Static drain-source on-resistance
Rds(on)
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Rg
Qg
Qgs
Qgd
-0.55
±10
-1.00
μA
μA
μA
V
A
35
47
42
57
44
54
16
53
70
Is=-1A, Vgs=0V
-0.78
-1.00
-2.2
Vgs=0V, Vds=-10V, f=1MHz
1450
205
160
pF
pF
pF
6.5
Ω
17.2
nC
1.3
4.5
nC
nC
9.5
17.0
94.0
ns
ns
ns
35.0
31.0
13.8
ns
ns
nC
Vgs=-4.5V
Id=-4.7A
Ta=125°C
Vgs=-2.5V, Id=-4A
Vgs=-1.8V, Id=-2A
Vds=-5V, Id=-4.7A
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-4A
td(on)
tr
Vgs=-4.5V, Vds=-10V
td(off) RL=2.5Ω, Rgen=3Ω
tf
trr
Qrr
V
If=-4A, dIf/dt=100A/μs
If=-4A, dIf/dt=100A/μs
8
mΩ
S
V
A
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Dual P-channel MOSFET
ELM18801BA-S
■Typical electrical and thermal characteristics
25
10
-4.5V
-8V
Vds=-5V
-3.0V
20
8
15
-2.5V
-Id (A)
-Id (A)
-2.0V
10
6
125°C
4
Vgs=-1.5V
5
2
0
25°C
0
0
1
2
3
4
5
0
0.5
-Vds (Volts)
Fig 1: On-Region Characteristics
80
Normalized On-Resistance
Rds(on) (m� )
1.5
2
1.6
Vgs=-1.8V
60
Vgs=-2.5V
40
Vgs=-4.5V
20
Id=-4.7A, Vgs=-2.5V
1.4
Id=-2A, Vgs=-1.8V
1.2
Id=-4.7A, Vgs=-4.5V
1.0
0.8
0
2
4
6
8
10
0
25
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1E+01
90
1E+00
Id=-4.7A
75
100
125
150
175
125°C
1E-01
-Is (A)
70
60
125°C
50
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
80
Rds(on) (m� )
1
-Vgs (Volts)
Figure 2: Transfer Characteristics
25°C
1E-02
1E-03
1E-04
40
25°C
1E-05
30
1E-06
20
0
2
4
6
0.0
8
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Dual P-channel MOSFET
ELM18801BA-S
2400
5
Vds=-10V
Id=-4.7A
2000
Capacitance (pF)
-Vgs (Volts)
4
3
2
Ciss
1600
1200
1
800
Coss
400
0
0
5
10
15
Crss
0
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Tj(max)=150°C
Ta=25°C
40
10�s
100�s
1ms
10ms
1s
10s
1
Z� ja Normalized Transient
Thermal Resistance
Tj(max)=150°C
Ta=25°C
20
10
-Vds (Volts)
10
0
0.001
100
D=Ton/(Ton+T)
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
20
0.1s
DC
0.1
0.1
15
30
Rds(on)
10.0 limited
1.0
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
100.0
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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