Data Sheet

SO
T4
57
PMN70XP
20 V, P-channel Trench MOSFET
29 January 2016
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
•
•
•
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1240 mW
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-20
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
-
-
-3.9
A
-
72
88
mΩ
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = -4.5 V; ID = -3.1 A; Tj = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
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PMN70XP
NXP Semiconductors
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
Simplified outline
Graphic symbol
6
5
4
1
2
3
D
G
TSOP6 (SOT457)
S
017aaa257
6. Ordering information
Table 3.
Ordering information
Type number
PMN70XP
Package
Name
Description
Version
TSOP6
plastic surface-mounted package (TSOP6); 6 leads
SOT457
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMN70XP
H5
PMN70XP
Product data sheet
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PMN70XP
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20 V, P-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-20
V
VGS
gate-source voltage
-12
12
V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
-3.9
A
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-3.1
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-2
A
-
-13
A
[2]
-
530
mW
[1]
-
1.24
W
-
4.46
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-1.2
A
Source-drain diode
IS
source current
[1]
[2]
Tamb = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
120
Pder
(%)
017aaa124
120
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
[1]
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMN70XP
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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PMN70XP
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20 V, P-channel Trench MOSFET
aaa-020593
-102
ID
(A)
-10
Limit RDSon = VDS/ID
tp =
10 µs
100 µs
-1
1 ms
10 ms
DC; Tsp = 25 °C
-10-1
100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
-10-2
-10-1
-1
-10
VDS (V)
-102
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
PMN70XP
Product data sheet
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PMN70XP
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20 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
[2]
Min
Typ
Max
Unit
[1]
-
205
235
K/W
[2]
-
88
101
K/W
[2]
-
55
63
K/W
-
24
28
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-020456
103
Zth(j-a)
(K/W)
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
duty cycle = 1
102
0.5
0.25
0.1
10
0.75
0.33
0.2
0.05
0.02
0
1
10-3
0.01
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN70XP
Product data sheet
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PMN70XP
NXP Semiconductors
20 V, P-channel Trench MOSFET
aaa-020457
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
10
0.1
0.05
0
1
10- 3
0.75
0.33
0.2
0.02
0.01
10- 2
10- 1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN70XP
Product data sheet
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PMN70XP
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20 V, P-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS=VGS; Tj = 25 °C
-0.47
-0.65
-0.9
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
IGSS
gate leakage current
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = -4.5 V; ID = -3.1 A; Tj = 25 °C
-
72
88
mΩ
VGS = -4.5 V; ID = -3.1 A; Tj = 150 °C
-
107
130
mΩ
VGS = -2.5 V; ID = -2.6 A; Tj = 25 °C
-
88
116
mΩ
VGS = -1.8 V; ID = -0.7 A; Tj = 25 °C
-
110
170
mΩ
VGS = -1.5 V; ID = -0.1 A; Tj = 25 °C
-
150
360
mΩ
VDS = -10 V; ID = -2 A; Tj = 25 °C
-
15
-
S
total gate charge
VDS = -10 V; ID = -2.5 A; VGS = -4.5 V;
-
5
7.5
nC
QGS
gate-source charge
Tj = 25 °C
-
0.7
-
nC
QGD
gate-drain charge
-
0.9
-
nC
Ciss
input capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
-
550
-
pF
Coss
output capacitance
Tj = 25 °C
-
63
-
pF
Crss
reverse transfer
capacitance
-
53
-
pF
td(on)
turn-on delay time
VDS = -10 V; ID = -2.5 A; VGS = -4.5 V;
-
6
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
14
-
ns
td(off)
turn-off delay time
-
120
-
ns
tf
fall time
-
50
-
ns
-
-0.9
-1.2
V
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
PMN70XP
Product data sheet
IS = -1.2 A; VGS = 0 V; Tj = 25 °C
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PMN70XP
NXP Semiconductors
20 V, P-channel Trench MOSFET
017aaa531
-10
-10 V
ID
(A)
-4.5 V
-8
VGS = -1.8 V
-2 V
aaa-012263
-10-3
ID
(A)
-2.5 V
-10-4
-1.6 V
min
-6
typ
max
-1.5 V
-4
-10-5
-1.4 V
-2
-1.2 V
-1 V
0
Fig. 6.
0
-1
-2
-3
VDS (V)
-10-6
-4
0
-0.5
-1.0
VGS (V)
-1.5
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
aaa-012264
0.3
-1.3 V
aaa-012265
0.4
-1.4 V
RDSon
(Ω)
RDSon
(Ω)
-1.6 V
0.3
-1.8 V
0.2
0.2
-2.5 V
0.1
Tj = 150 °C
0.1
VGS = -4.5 V
0
0
-1
-2
-3
ID (A)
Tj = 25 °C
0
-4
Tj = 25 °C
Fig. 8.
Product data sheet
-1
-2
-3
-4
VGS (V)
-5
ID = -3 A
Drain-source on-state resistance as a function
of drain current; typical values
PMN70XP
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PMN70XP
NXP Semiconductors
20 V, P-channel Trench MOSFET
017aaa535
-10
017aaa536
2.0
ID
(A)
a
-8
1.5
-6
1.0
-4
0.5
-2
0
Tj = 150 °C
0
-0.5
Tj = 25 °C
-1.0
-1.5
0
-60
-2.0
-2.5
VGS (V)
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-012266
-1.5
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
017aaa538
103
Ciss
VGS(th)
(V)
C
(pF)
-1.0
max
102
typ
-0.5
Coss
min
0
-60
0
60
Crss
120
Tj (°C)
10
-10-1
180
ID = -250 µA; VDS = VGS
Product data sheet
-10
VDS (V)
-102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
PMN70XP
-1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMN70XP
NXP Semiconductors
20 V, P-channel Trench MOSFET
aaa-012267
-5
VDS
VGS
(V)
ID
-4
VGS(pl)
-3
VGS(th)
VGS
-2
QGS1
-1
0
QGS2
0
2
4
QG (nC)
QGS
QGD
QG(tot)
003aaa508
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
6
ID = -2.8 A; VDS = -10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa540
-4
IS
(A)
-3
-2
-1
0
Tj = 150 °C
0
-0.4
Tj = 25 °C
-0.8
-1.2
VSD (V)
-1.4
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMN70XP
Product data sheet
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PMN70XP
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20 V, P-channel Trench MOSFET
12. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.95
1.9
0.40
0.25
Dimensions in mm
0.26
0.10
14-10-03
Fig. 18. Package outline TSOP6 (SOT457)
13. Soldering
3.45
1.95
0.45 0.55
(6×) (6×)
0.95
solder lands
solder resist
3.3 2.825
0.95
solder paste
occupied area
0.7
(6×)
Dimensions in mm
0.8
(6×)
2.4
sot457_fr
Fig. 19. Reflow soldering footprint for TSOP6 (SOT457)
PMN70XP
Product data sheet
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PMN70XP
NXP Semiconductors
20 V, P-channel Trench MOSFET
5.3
1.5
(4×)
1.475
0.45
(2×)
5.05
1.475
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig. 20. Wave soldering footprint for TSOP6 (SOT457)
PMN70XP
Product data sheet
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PMN70XP
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20 V, P-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMN70XP v.1
20160129
Product data sheet
-
-
PMN70XP
Product data sheet
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PMN70XP
NXP Semiconductors
20 V, P-channel Trench MOSFET
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
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Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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PMN70XP
Product data sheet
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20 V, P-channel Trench MOSFET
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Notice: All referenced brands, product names, service names and
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Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
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TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMN70XP
Product data sheet
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20 V, P-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................5
10
Characteristics ....................................................... 7
11
Test information ................................................... 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 11
14
Revision history ................................................... 13
15
15.1
15.2
15.3
15.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 January 2016
PMN70XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 January 2016
© NXP Semiconductors N.V. 2016. All rights reserved
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