Data Sheet

SO
T2
3
PMV20EN
30 V, N-channel Trench MOSFET
5 June 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
•
Logic level compatible
Very fast switching
Trench MOSFET technology
Enhanced power dissipation capability of 1200 mW
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
30
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
7.6
A
-
17
21
mΩ
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 10 V; ID = 6 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
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PMV20EN
NXP Semiconductors
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
3
D
G
S
1
2
017aaa253
TO-236AB (SOT23)
6. Ordering information
Table 3.
Ordering information
Type number
PMV20EN
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PMV20EN
%KC
[1]
PMV20EN
Product data sheet
% = placeholder for manufacturing site code
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PMV20EN
NXP Semiconductors
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
30
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
7.6
A
VGS = 10 V; Tamb = 25 °C
[1]
-
6
A
VGS = 10 V; Tamb = 100 °C
[1]
-
3.8
A
-
24
A
[2]
-
510
mW
[1]
-
1200
mW
-
6940
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
1.1
A
Source-drain diode
IS
source current
PMV20EN
Product data sheet
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
drain 6 cm .
Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
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PMV20EN
NXP Semiconductors
30 V, N-channel Trench MOSFET
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
0
- 75
175
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
- 25
25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
aaa-013408
102
lD
(A)
tp = 10 µs
10
tp = 100 µs
tp = 1 ms
1
tp = 10 ms
DC; Tamb = 25 °C; 6 cm2
tp = 100 ms
DC; Tsp = 25 °C
10-1
10-2
10-1
1
10
102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
PMV20EN
Product data sheet
in free air; t ≤ 5 s
All information provided in this document is subject to legal disclaimers.
5 June 2014
Min
Typ
Max
Unit
[1]
-
208
245
K/W
[2]
-
88
104
K/W
[2]
-
55
65
K/W
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PMV20EN
NXP Semiconductors
30 V, N-channel Trench MOSFET
Symbol
Parameter
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
Min
Typ
Max
Unit
-
13
18
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
aaa-013409
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
aaa-013411
duty cycle = 1
0.75
0.50
0.33
Zth(j-a)
(K/W)
102
10
0.25
0.02
0.01
1
10-3
0.20
0.10
0.05
0
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV20EN
Product data sheet
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PMV20EN
NXP Semiconductors
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
1
1.5
2
V
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 10 V; ID = 6 A; Tj = 25 °C
-
17
21
mΩ
VGS = 10 V; ID = 6 A; Tj = 150 °C
-
27
34
mΩ
VGS = 4.5 V; ID = 5.4 A; Tj = 25 °C
-
21
26
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 10 V; ID = 2 A; Tj = 25 °C
-
8
-
S
RG
gate resistance
f = 1 MHz; Tj = 25 °C
-
1.7
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = 15 V; ID = 5 A; VGS = 10 V;
-
7.2
10.8
nC
QGS
gate-source charge
Tj = 25 °C
-
1
-
nC
QGD
gate-drain charge
-
0.7
-
nC
Ciss
input capacitance
VDS = 15 V; f = 1 MHz; VGS = 0 V;
-
435
-
pF
Coss
output capacitance
Tj = 25 °C
-
90
-
pF
Crss
reverse transfer
capacitance
-
35
-
pF
td(on)
turn-on delay time
VDS = 15 V; ID = 5 A; VGS = 10 V;
-
9
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
17
-
ns
td(off)
turn-off delay time
-
9
-
ns
tf
fall time
-
8
-
ns
-
0.75
1.2
V
Source-drain diode
VSD
source-drain voltage
PMV20EN
Product data sheet
IS = 1.1 A; VGS = 0 V; Tj = 25 °C
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PMV20EN
NXP Semiconductors
30 V, N-channel Trench MOSFET
aaa-013412
24
10 V
ID
(A)
4.5 V
017aaa545
10-2
ID
(A)
3.2 V
10-3
3.8 V
16
10-4
min
typ
1.0
1.5
max
2.8 V
8
10-5
2.5 V
VGS = 2.2 V
0
Fig. 6.
0
1
2
3
10-6
0.0
4
VDS (V)
2.0
2.5
VGS (V)
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
017aaa546
0.10
RDSon
(Ω)
2.5 V
3.0 V
RDSon
(Ω)
3.25 V
0.08
0.06
0.06
0.04
0.04
3.5 V
0
5
10
15
0.02
10 V
20
ID (A)
0.00
25
Tj = 25 °C
Product data sheet
Tj = 25 °C
0
2
4
6
8
10
VGS (V)
ID = 8 A
Drain-source on-state resistance as a function
of drain current; typical values
PMV20EN
Tj = 150 °C
3.75 V
4.5 V
0.02
0.00
017aaa547
0.10
VGS = 2.75 V
0.08
Fig. 8.
0.5
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PMV20EN
NXP Semiconductors
30 V, N-channel Trench MOSFET
017aaa548
30
017aaa549
1.8
ID
(A)
a
20
1.4
10
1.0
Tj = 150 °C
0
0
1
2
Tj = 25 °C
3
VGS (V)
0.6
-60
4
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
60
120
max
1.5
typ
Ciss
C
(pF)
102
1.0
Coss
min
Crss
0.5
0.0
-60
0
60
120
Tj (°C)
10
10-1
180
ID = 0.25 mA; VDS = VGS
Product data sheet
1
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
PMV20EN
180
017aaa550
103
VGS(th)
(V)
2.0
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
017aaa560
2.5
0
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMV20EN
NXP Semiconductors
30 V, N-channel Trench MOSFET
017aaa551
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
2
QGD
QG(tot)
003aaa508
0
0
2
4
6
QG (nC)
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
8
ID = 5 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa552
2.5
IS
(A)
2.0
1.5
1.0
Tj = 150 °C
Tj = 25 °C
0.5
0.0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMV20EN
Product data sheet
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PMV20EN
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30 V, N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
Fig. 18. Package outline TO-236AB (SOT23)
PMV20EN
Product data sheet
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30 V, N-channel Trench MOSFET
13. Soldering
3.3
2.9
1.9
solder lands
3
solder resist
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
PMV20EN
Product data sheet
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PMV20EN
NXP Semiconductors
30 V, N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMV20EN v.1
20140605
Product data sheet
-
-
PMV20EN
Product data sheet
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PMV20EN
NXP Semiconductors
30 V, N-channel Trench MOSFET
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
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information included herein and shall have no liability for the consequences
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMV20EN
Product data sheet
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authorized or warranted to be suitable for use in life support, life-critical or
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malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
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customer’s applications and products planned, as well as for the planned
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associated with their applications and products.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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30 V, N-channel Trench MOSFET
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In the event that customer uses the product for design-in and use in
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMV20EN
Product data sheet
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30 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 5 June 2014
PMV20EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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