Data Sheet

SO
T8
83
B
PMZB320UPE
30 V, P-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Ultra thin package profile of 0.37 mm
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-30
V
VGS
gate-source voltage
-8
-
8
V
ID
drain current
-
-
-1
A
-
430
510
mΩ
VGS = -4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = -4.5 V; ID = -1 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 1 cm .
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PMZB320UPE
NXP Semiconductors
30 V, P-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
Simplified outline
gate
2
S
source
3
D
drain
Graphic symbol
D
1
3
2
Transparent
top view
G
DFN1006B-3 (SOT883B)
S
017aaa259
6. Ordering information
Table 3.
Ordering information
Type number
PMZB320UPE
Package
Name
Description
Version
DFN1006B-3
DFN1006B-3: leadless ultra small plastic package; 3 solder
lands; body 1.0 x 0.6 x 0.37 mm
SOT883B
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMZB320UPE
0101 0010
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
PMZB320UPE
Product data sheet
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30 V, P-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-30
V
VGS
gate-source voltage
-8
8
V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-1
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-0.6
A
-
-4
A
[2]
-
350
mW
[1]
-
760
mW
-
6250
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-0.7
A
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 2.
017aaa124
120
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMZB320UPE
Product data sheet
0
- 75
175
Fig. 3.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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30 V, P-channel Trench MOSFET
aaa-017063
-10
ID
(A)
tp = 10 µs
Limit RDSon = VDS/ID
-1
100 µs
1 ms
DC; Tsp = 25 °C
-10-1
10 ms
DC; Tamb = 25 °C; 1 cm2
100 ms
-10-2
-10-1
Fig. 4.
-1
-10
-102
VDS (V)
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
PMZB320UPE
Product data sheet
Min
Typ
Max
Unit
[1]
-
315
360
K/W
[2]
-
145
165
K/W
-
17
20
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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NXP Semiconductors
30 V, P-channel Trench MOSFET
aaa-017064
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
102
0.33
0.20
0.50
0.10
0.05
0.25
0.10
0.02
0.01
0
10
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-017065
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.33
0.20
10
1
10-3
0.50
0.10
0.25
0.05
0.02
0.01
0
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm
Fig. 6.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB320UPE
Product data sheet
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NXP Semiconductors
30 V, P-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-30
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.45
-0.7
-0.95
V
IDSS
drain leakage current
VDS = -30 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
5
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-5
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = -4.5 V; ID = -1 A; Tj = 25 °C
-
430
510
mΩ
VGS = -4.5 V; ID = -1 A; Tj = 150 °C
-
680
810
mΩ
VGS = -2.5 V; ID = -0.8 A; Tj = 25 °C
-
570
770
mΩ
VGS = -1.8 V; ID = -0.25 A; Tj = 25 °C
-
750
1140
mΩ
VGS = -1.5 V; ID = -0.01 A; Tj = 25 °C
-
950
1610
mΩ
VDS = -10 V; ID = -1 A; Tj = 25 °C
-
2.1
-
S
total gate charge
VDS = -15 V; ID = -1 A; VGS = -4.5 V;
-
1.4
-
nC
QGS
gate-source charge
Tj = 25 °C
-
0.2
-
nC
QGD
gate-drain charge
-
0.3
-
nC
Ciss
input capacitance
VDS = -15 V; f = 1 MHz; VGS = 0 V;
-
122
-
pF
Coss
output capacitance
Tj = 25 °C
-
11
-
pF
Crss
reverse transfer
capacitance
-
9
-
pF
td(on)
turn-on delay time
VDS = -15 V; ID = -1 A; VGS = -4.5 V;
-
3
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
6
-
ns
td(off)
turn-off delay time
-
22
-
ns
tf
fall time
-
5
-
ns
-
-1
-1.2
V
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
PMZB320UPE
Product data sheet
IS = -0.7 A; VGS = 0 V; Tj = 25 °C
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NXP Semiconductors
30 V, P-channel Trench MOSFET
aaa-017066
-4
ID
(A)
aaa-017067
-10-3
VGS = -4.5 V
ID
(A)
-2.5 V
-3
-10-4
-2.0 V
-2
-1.8 V
(1)
-10-5
(2)
(3)
-1.5 V
-1
-1.2 V
0
Fig. 7.
0
-1
-2
-3
VDS (V)
-10-6
-4
-0.5
Tj = 25 °C
VDS = -5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C
aaa-017068
2.0
-1.5 V
RDS(on)
(Ω)
VGS (V)
-1.5
Sub-threshold drain current as a function of
gate-source voltage
aaa-017069
2.0
-1.8 V
RDS(on)
-2.0 V
1.6
1.5
1.2
-2.5 V
1.0
-3.0 V
0.8
Tj = 150 °C
0.5
VGS = -4.5 V
0.4
0
-1.0
(1) minimum values
(2) typical values
(3) maximum values
Fig. 8.
0
-1
-2
-3
ID (A)
Tj = 25 °C
0
-4
Tj = 25 °C
Fig. 9.
0
Product data sheet
-1
-2
-3
-4
VGS (V)
-5
ID = -1.7 A
Drain-source on-state resistance as a function
of drain current; typical values
PMZB320UPE
0
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NXP Semiconductors
30 V, P-channel Trench MOSFET
aaa-017070
-4
ID
(A)
aaa-017071
2.0
a
Tj = 25 °C
-3
Tj = 150 °C
1.5
-2
1.0
-1
0.5
0
0
-1
-2
-3
VGS (V)
0
-60
-4
VDS > ID x RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
60
120
Tj (°C)
180
Fig. 12. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
aaa-017072
-1.5
0
aaa-017073
103
C
(pF)
VGS(th)
(V)
(1)
-1.0
102
(1)
(2)
(2)
-0.5
-0
-60
10
(3)
0
60
120
Tj (°C)
1
-10-1
180
(3)
-1
ID = -250 µA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(2) typical values
(3) maximum values
(1) Ciss
Product data sheet
VDS (V)
-102
(2) Coss
(3) Crss
Fig. 13. Gate-source threshold voltage as a function of
ambient temperature
PMZB320UPE
-10
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMZB320UPE
NXP Semiconductors
30 V, P-channel Trench MOSFET
aaa-017074
-5
VDS
VGS
(V)
ID
-4
VGS(pl)
-3
VGS(th)
VGS
-2
QGS1
QGS2
QGS
-1
QGD
QG(tot)
003aaa508
0
0
0.3
0.6
0.9
Fig. 16. Gate charge waveform definitions
1.2
1.5
QG (nC)
VDS = -15 V; ID = -1 A; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-017075
-3
IS
(A)
-2
-1
Tj = 150 °C
0
0
-0.4
Tj = 25 °C
-0.8
-1.2
-1.6
-2.0
VSD (V)
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 18. Duty cycle definition
PMZB320UPE
Product data sheet
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30 V, P-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
L (2x)
SOT883B
L1
2
b (2x)
3
e
b1
1
e1
A1
A
E
D
0
0.5
Dimensions
Unit
1 mm
scale
A(1)
A1
b
b1
D
E
e
e1
L
L1
max 0.40 0.04 0.20 0.55 0.65 1.05
0.30 0.30
nom 0.37
0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25
min 0.34
0.12 0.47 0.55 0.95
0.22 0.22
mm
Note
1. Including plating thickness
Outline
version
sot883b_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
11-11-02
12-01-03
SOT883B
Fig. 19. Package outline DFN1006B-3 (SOT883B)
PMZB320UPE
Product data sheet
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30 V, P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6
0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
(2x)
0.4
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot883b_fr
Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B)
PMZB320UPE
Product data sheet
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14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMZB320UPE v.1
20150324
Product data sheet
-
-
PMZB320UPE
Product data sheet
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30 V, P-channel Trench MOSFET
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or replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
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PMZB320UPE
Product data sheet
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30 V, P-channel Trench MOSFET
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reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMZB320UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
14 / 15
PMZB320UPE
NXP Semiconductors
30 V, P-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 March 2015
PMZB320UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
15 / 15