Data Sheet

TO
-2
20F
PSMN7R6-60XS
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F
(SOT186A)
16 December 2014
Product data sheet
1. General description
Standard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to
175 °C. This product is designed and qualified for use in a wide range of industrial,
communications and power supply equipment.
2. Features and benefits
•
•
•
High efficiency due to low switching and conduction losses
Isolated TO220F package
Suitable for standard level gate drive
3. Applications
•
•
•
AC-to-DC power supply equipment
Synchronous rectification
Motor control
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
-
60
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2; Fig. 3
-
-
51.5
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
-
46
W
Tj
junction temperature
-55
-
175
°C
-
5.9
7.8
mΩ
-
10.6
-
nC
-
38.7
-
nC
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 14; Fig. 10
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 30 V;
Fig. 16; Fig. 15
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 30 V;
Fig. 15; Fig. 16
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
191.5
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
[1]
VGS = 10 V; Tj(init) = 25 °C; ID = 51.5 A;
[1]
Vsup ≤ 60 V; RGS = 50 Ω; unclamped;
Fig. 4
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
Simplified outline
Graphic symbol
D
mb
G
mounting base; isolated
mbb076
S
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PSMN7R6-60XS
Name
Description
Version
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
60
V
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
60
V
VGS
gate-source voltage
-20
20
V
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
46
W
ID
drain current
VGS = 10 V; Tmb = 100 °C; Fig. 2
-
36.4
A
VGS = 10 V; Tmb = 25 °C; Fig. 2; Fig. 3
-
51.5
A
PSMN7R6-60XS
Product data sheet
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
Symbol
Parameter
Conditions
Min
Max
Unit
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
206
A
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
38.7
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
206
A
-
191.5
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 51.5 A;
[1]
Vsup ≤ 60 V; RGS = 50 Ω; unclamped;
Fig. 4
[1]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
03aa16
120
ID
(A)
Pder
(%)
aaa-016213
60
50
40
80
30
20
40
10
0
Fig. 1.
0
50
100
150
Tmb (°C)
Normalized total power dissipation as a
function of mounting base temperature
PSMN7R6-60XS
Product data sheet
0
200
Fig. 2.
0
25
75
100
125
150 175
Tmb (°C)
200
Continuous drain current as a function of
mounting base temperature
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
ID
(A)
aaa-016211
103
Limit RDSon = VDS / ID
tp = 10 us
102
100 us
10
DC
1 ms
10 ms
100 ms
1
10-1
10-1
Fig. 3.
1
10
102
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
IAL
(A)
aaa-016212
102
(1)
10
(2)
1
10-3
Fig. 4.
10-2
10-1
1
tAL (ms)
10
Avalanche rating; avalanche current as a function of avalanche time
8. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
3.01
3.23
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
vertical in free air
-
55
-
K/W
PSMN7R6-60XS
Product data sheet
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
aaa-016210
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10-1
0.05
0.02
P
single shot
10-2
δ=
tp
10-3
10-6
Fig. 5.
10-5
10-4
10-3
10-2
tp
T
t
T
10-1
1
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
9. Isolation characteristics
Table 6.
Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cisol
isolation capacitance
f = 1 MHz
-
10
-
pF
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
sinusoidal waveform; clean and dust
free
-
-
2500
V
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
54
-
-
V
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
-
-
V
-
-
4.6
V
2
3
4
V
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
VGS(th)
Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
VGS(th)
IDSS
IGSS
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
0.05
10
µA
VDS = 60 V; VGS = 0 V; Tj = 125 °C
-
-
100
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
gate leakage current
PSMN7R6-60XS
Product data sheet
Fig. 12; Fig. 11
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
Symbol
RDSon
Parameter
drain-source on-state
resistance
Conditions
Min
Typ
Max
Unit
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 175 °C;
-
13.3
18
mΩ
-
5.9
7.8
mΩ
f = 1 MHz
-
0.98
-
Ω
Fig. 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 14; Fig. 10
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 30 V; VGS = 10 V;
-
38.7
-
nC
QGS
gate-source charge
Fig. 15; Fig. 16
-
12.9
-
nC
QGS(th)
pre-threshold gatesource charge
-
6.9
-
nC
QGS(th-pl)
post-threshold gatesource charge
-
6
-
nC
QGD
gate-drain charge
-
10.6
-
nC
ID = 25 A; VDS = 30 V; VGS = 10 V;
Fig. 16; Fig. 15
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 30 V; Fig. 15; Fig. 16
-
5.6
-
V
Ciss
input capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
-
2651
-
pF
-
342
-
pF
-
183
-
pF
Tj = 25 °C; Fig. 17; Fig. 9
Coss
output capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 17
Crss
reverse transfer
capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
turn-on delay time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
-
19
-
ns
tr
rise time
RG(ext) = 4.7 Ω
-
21
-
ns
td(off)
turn-off delay time
-
37
-
ns
tf
fall time
-
13
-
ns
td(on)
Tj = 25 °C; Fig. 17; Fig. 9
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 18
-
0.86
1.2
V
trr
reverse recovery time
IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
-
40.4
-
ns
recovered charge
VDS = 30 V
-
56
-
nC
Qr
PSMN7R6-60XS
Product data sheet
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
003aad663
100
6.0
15
ID
(A)
80
gfs
5.5
10
8.0
003aad669
160
(S)
120
60
80
5.0
40
40
20
0
Fig. 6.
VGS (V) = 4.5
0
0.5
1
1.5
VDS (V)
0
2
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
003aad665
100
0
20
40
60
80
ID
003aad664
Ciss
C
(pF)
80
100
Forward transconductance as a function of
drain current; typical values
4000
(A)
ID (A)
3000
60
Crss
2000
40
0
Fig. 8.
Tj = 25 °C
Tj = 175 °C
20
0
2
4
VGS (V)
1000
0
6
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN7R6-60XS
Product data sheet
Fig. 9.
0
10
15
VGS (V)
20
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
003aad666
20
RDSon
(mΩ)
16
VGS(th)
(V)
12
3
8
2
4
1
0
003aad280
5
4
0
5
10
15
VGS (V)
0
- 60
20
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
03aa35
10- 1
ID
(A)
max
typ
min
0
60
120
Tj (°C)
180
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
003aad696
2.4
a
min
10- 2
typ
max
2
1.6
10- 3
1.2
10- 4
0.8
10- 5
10- 6
0.4
0
2
4
VGS (V)
0
-60
6
Fig. 12. Sub-threshold drain current as a function of
gate-source voltage
PSMN7R6-60XS
Product data sheet
0
60
120
Tj (°C)
180
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature.
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
003aad667
30
4.5
5.5
5.0
003aad671
10
VGS
(V)
RDSon
(mΩ)
30 V
8
VDS = 12 V
48 V
20
6
4
6.0
10
2
VGS (V) = 15
0
0
20
40
10.0
60
8.0
80
ID (A)
0
100
Fig. 14. Drain-source on-state resistance as a function
of drain current; typical values
0
10
20
30
40
50
QG (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aad668
104
VDS
C
(pF)
ID
Ciss
VGS(pl)
VGS(th)
103
VGS
QGS1
QGS2
QGS
Coss
QGD
QG(tot)
Crss
003aaa508
Fig. 16. Gate charge waveform definitions
102
10- 2
10- 1
1
10
VDS (V)
102
Fig. 17. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN7R6-60XS
Product data sheet
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
003aad670
100
IS
(A)
80
60
40
Tj = 175 °C
20
0
0
0.3
0.6
Tj = 25 °C
0.9
VSD (V)
1.2
Fig. 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN7R6-60XS
Product data sheet
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
11. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
E
A
P
A1
q
D1
mounting
base
T
D
j
L2
L1
K
Q
b1
L
b2
1
2
3
b
w M
c
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
b2
c
D
D1
E
e
e1
j
K
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
1.7
0.6
0.4
L
L1
14.4 3.30
13.5 2.79
(1)
L2
max.
P
Q
q
3
3.2
3.0
2.6
2.3
3.0
2.6
(2)
T
2.5
w
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are # 2.5 × 0.8 max. depth
OUTLINE
VERSION
SOT186A
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-04-09
06-02-14
3-lead TO-220F
Fig. 19. Package outline TO-220F (SOT186A)
PSMN7R6-60XS
Product data sheet
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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PSMN7R6-60XS
Product data sheet
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PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
grant, conveyance or implication of any license under any copyrights, patents
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may be subject to export control regulations. Export might require a prior
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
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between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN7R6-60XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
13 / 14
PSMN7R6-60XS
NXP Semiconductors
N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Limiting values .......................................................2
8
Thermal characteristics .........................................4
9
Isolation characteristics ........................................5
10
Characteristics ....................................................... 5
11
Package outline ................................................... 11
12
12.1
12.2
12.3
12.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 December 2014
PSMN7R6-60XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
14 / 14