DMN2028USS

DMN2028USS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ADVANCE INFORMATION
ID max
V(BR)DSS
RDS(on) max
TA = +25°C
(Note 6)
20V
20mΩ @ VGS= 4.5V
9.8A
28mΩ @ VGS= 2.5V
8.3A

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Output Leakage

ESD Protected Up to 2kV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.



Battery charging

Power management functions

DC-DC converters

Portable power adaptors




Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D
S
D
S
D
S
D
G
D
SO-8
G
ESD PROTECTED TO 2kV
Top View
Top View
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Product
DMN2028USS-13
Notes:
Marking
N2028US
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
N2028US
N2028US
YY WW
YY WW
1
4
Chengdu A/T Site
DMN2028USS
Document number: DS32075 Rev. 4 - 2
= Manufacturer’s Marking
N2028US = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
Shanghai A/T Site
1 of 7
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October 2013
© Diodes Incorporated
DMN2028USS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
VGS = 4.5V
Pulsed Drain current
VGS = 4.5V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 6)
TA = +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
ID
IDM
IS
ISM
Value
20
12
9.8
7.9
7.3
45.0
6.0
45.0
Unit
Value
1.56
12.5
2.81
22.5
80.0
44.5
37.0
-55 to +150
Unit
V
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 8)
PD
RJA
RJL
TJ, TSTG
W
mW/°C
°C/W
°C
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t  10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN2028USS
Document number: DS32075 Rev. 4 - 2
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DMN2028USS
10
RDS(on) Limited
Max Power Dissipation (W)
ID Drain Current (A)
1.6
1
DC
1s
100m
100ms
10m
10ms
Single Pulse
T amb=25°C
1m
100m
1ms
100µs
1
10
VDS Drain-Source Voltage (V)
1.4
25mm x 25mm
1oz FR4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
Safe Operating Area
80
70
25mm x 25mm
1oz FR4
60
T amb=25°C
50
D=0.5
40
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
Pulse Width (s)
10
100
Document number: DS32075 Rev. 4 - 2
60
80
100 120 140 160
Temperature (°C)
1k
Single Pulse
T amb=25°C
100
10
1
100µ
Transient Thermal Impedance
DMN2028USS
40
Derating Curve
Maximum Power (W)
Thermal Resistance (°C/W)
ADVANCE INFORMATION
Thermal Characteristics
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1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
October 2013
© Diodes Incorporated
DMN2028USS
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1.0
±10
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
0.6
RDS (ON)
-
Forward Transfer Admittance (Note 9 & 10)
Diode Forward Voltage (Note 9)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
|Yfs|
VSD
-
1.3
20
28
1.3
V
Static Drain-Source On-Resistance (Note 9)
1.0
11
15
16
0.7
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 9.4A
VGS = 2.5V, ID = 8.3A
VDS = 5V, ID = 9.4A
VGS = 0V, IS = 1.3A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1000
166
158
1.51
7.0
11.6
2.7
3.4
11.67
12.49
35.89
12.33
-
mΩ
S
V
pF
Ω
nC
ns
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 2.5V
VDS = 10V
ID = 9.4A
VGS = 4.5V
VGS = 4.5V, VDS = 10V,
RG = 6Ω , ID = 1A
9. Measured under pulsed conditions. Pulse width  300μs; duty cycle  2%
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
30
20
VGS = 10V
VGS = 4.5V
25
VGS = 4.0V
ID, DRAIN CURRENT (A)
Notes:
ID, DRAIN CURRENT (A)
ADVANCE INFORMATION
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
VGS = 3.5V
20
VGS = 3.0V
VGS = 2.5V
15
VGS = 2.0V
10
5
0
15
10
5
TA = 150°C
T A = 125°C
VGS = 1.8V
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMN2028USS
Document number: DS32075 Rev. 4 - 2
T A = 85°C
TA = 25°C
2
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0
TA = -55°C
0
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
October 2013
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.030
0.025
0.020
0.015
VGS = 2.5V
0.010
VGS = 4.5V
0.005
0
0
5
10
15
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.030
0.025
T A = 150°C
0.015
TA = 125°C
T A = 85°C
0.010
T A = 25°C
T A = -55°C
0.005
0
20
0
5
10
15
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
20
0.030
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
0.020
1.6
1.4
1.2
1.0
VGS = 2.5V
ID = 5A
0.8
VGS = 4.5V
ID = 10A
0.6
-50
0.025
0.020
0.010
0
-50
20
2.5
IS, SOURCE CURRENT (A)
16
2.0
1.5
1.0
ID = 1mA
ID = 250µA
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
Document number: DS32075 Rev. 4 - 2
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
3.0
DMN2028USS
VGS = 4.5V
ID = 10A
0.005
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
0.5
VGS = 2.5V
ID = 5A
0.015
Fig. 5 On-Resistance Variation with Temperature
VGS(TH), GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
DMN2028USS
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12
TA = 25°C
8
4
0
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
October 2013
© Diodes Incorporated
DMN2028USS
10,000
10,000
IDSS, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)
1,000
Ciss
Coss
Crss
100
10
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
TA = 150°C
1,000
TA = 125°C
100
T A = 85°C
10
1
20
TA = 25°C
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
20
10
VGS, GATE-SOURCE VOLTAGE (V)
VDS = 15V
ID = 9.4A
8
6
4
2
0
0
5
10
15
20
25
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
30
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0.254
ADVANCE INFORMATION
f = 1MHz
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
A2 A A3
7°~9°
45°
Detail ‘A’
b
e
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0
8

All Dimensions in mm
D
DMN2028USS
Document number: DS32075 Rev. 4 - 2
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DMN2028USS
Suggested Pad Layout
ADVANCE INFORMATION
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
C2
C1
Value (in mm)
0.60
1.55
5.4
1.27
C2
Y
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMN2028USS
Document number: DS32075 Rev. 4 - 2
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