BSC093N04LS G Data Sheet (521 KB, EN)

BSC093N04LS G
OptiMOS™3 Power-Transistor
Product Summary
Features
VDS
40
V
• Fast switching MOSFET for SMPS
RDS(on),max
9.3
mW
• Optimized technology for DC/DC converters
ID
49
A
• Qualified according to JEDEC1) for target applications
PG-TDSON-8
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC093N04LS G
PG-TDSON-8
093N04LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
49
V GS=10 V, T C=100 °C
31
V GS=4.5 V, T C=25 °C
40
V GS=4.5 V,
T C=100 °C
26
V GS=10 V, T A=25 °C,
R thJA=50 K/W 2)
13
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
196
Avalanche current, single pulse4)
I AS
T C=25 °C
40
Avalanche energy, single pulse
E AS
I D=40 A, R GS=25 W
10
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
Rev. 2.1
page 1
2013-05-21
BSC093N04LS G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
35
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
3.6
Thermal characteristics
Thermal resistance, junction - case
R thJC
bottom
top
Device on PCB
R thJA
6 cm2 cooling area2)
K/W
20
-
-
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=14 µA
1.2
-
2
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=40 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=20 A
-
11.0
13.7
mW
V GS=10 V, I D=40 A
-
7.8
9.3
-
1
-
W
34
67
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=40 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev. 2.1
page 2
2013-05-21
BSC093N04LS G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1400
1900
-
340
450
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=20 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
16
-
Turn-on delay time
t d(on)
-
3.6
-
Rise time
tr
-
2.4
-
Turn-off delay time
t d(off)
-
16
-
Fall time
tf
-
2.8
-
Gate to source charge
Q gs
-
4.9
-
Gate charge at threshold
Q g(th)
-
2.3
-
Gate to drain charge
Q gd
-
2.0
-
Switching charge
Q sw
-
4.6
-
Gate charge total
Qg
-
18
24
Gate plateau voltage
V plateau
-
3.5
-
Gate charge total
Qg
V DD=20 V, I D=30 A,
V GS=0 to 4.5 V
-
8.6
11.4
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
17
-
Output charge
Q oss
V DD=20 V, V GS=0 V
-
13
-
-
-
29
-
-
196
V DD=20 V, V GS=10 V,
I D=30 A, R G,ext=1.6 W
pF
ns
Gate Charge Characteristics5)
V DD=20 V, I D=30 A,
V GS=0 to 10 V
nC
V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=40 A,
T j=25 °C
-
0.9
1.2
Reverse recovery charge
Q rr
V R=20 V, I F=I S,
di F/dt =400 A/µs
-
15
-
5)
A
T C=25 °C
V
nC
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-05-21
BSC093N04LS G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
40
50
35
40
30
30
ID [A]
Ptot [W]
25
20
20
15
10
10
5
0
0
0
40
80
120
160
0
40
80
TC [°C]
120
160
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
0.5
102
10 µs
1
0.2
ZthJC [K/W]
ID [A]
100 µs
DC
101
0.1
0.05
0.02
1 ms
0.01
0.1
10 ms
single pulse
100
10-1
0.01
10-1
100
101
102
VDS [V]
Rev. 2.1
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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2013-05-21
BSC093N04LS G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
20
120
3.5 V
5V
4.5 V
100
10 V
16
4V
RDS(on) [mW]
80
ID [A]
4V
60
12
4.5 V
5V
10 V
8
40
3.5 V
4
20
3.2 V
3V
2.8 V
0
0
0
1
2
0
3
10
20
VDS [V]
30
40
50
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
120
120
100
100
80
80
gfs [S]
ID [A]
parameter: T j
60
40
40
20
20
150 °C
25 °C
0
0
0
1
2
3
4
5
VGS [V]
Rev. 2.1
60
0
40
80
120
160
ID [A]
page 5
2013-05-21
BSC093N04LS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=40 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=14 µA
16
2.5
2
98 %
8
1.5
VGS(th) [V]
RDS(on) [mW]
12
typ
1
4
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
Ciss
103
Coss
150 °C, 98%
100
IF [A]
C [pF]
25 °C
102
150 °C
25 °C, 98%
Crss
10
101
100
1
0
10
20
30
40
VDS [V]
Rev. 2.1
0.0
0.5
1.0
1.5
2.0
VSD [V]
page 6
2013-05-21
BSC093N04LS G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
100
12
20 V
10
8V
32 V
8
VGS [V]
IAV [A]
25 °C
100 °C
10
125 °C
6
4
2
1
0
0.1
1
10
100
1000
0
4
tAV [µs]
8
12
16
20
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
45
V GS
Qg
VBR(DSS) [V]
40
35
V gs(th)
30
25
Q g(th)
Q sw
Q gs
20
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.1
page 7
2013-05-21
BSC093N04LS G
Package Outline
PG-TDSON-8
PG-TDSON-8: Outline
Footprint
Rev. 2.1
page 8
2013-05-21
BSC093N04LS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.1
page 9
2013-05-21
BSC093N04LS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 10
2013-05-21
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