BSC047N08NS3 G Data Sheet (296 KB, EN)

BSC047N08NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
VDS
80
V
RDS(on),max
4.7
mΩ
ID
100
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC047N08NS3 G
Package
PG-TDSON-8
Marking
047N08NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
100
V GS=10 V, T C=100 °C
79
V GS=10 V, T A=25 °C,
R thJA=50 K/W 2)
Unit
A
18
Pulsed drain current3)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse4)
E AS
I D=50 A, R GS=25 Ω
310
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
2)
Rev. 2.7
page 1
2012-04-04
BSC047N08NS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
125
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1
Thermal characteristics
Thermal resistance, junction - case
R thJC
bottom
top
Device on PCB
R thJA
K/W
18
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
50
80
-
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=90 µA
2
2.8
3.5
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=80 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A
-
3.9
4.7
mΩ
V GS=6 V, I D=25 A
-
5.6
8.9
-
2.2
-
Ω
60
120
-
S
Gate resistance
RG
Transconductance
g fs
Rev. 2.7
|V DS|>2|I D|R DS(on)max,
I D=100 A
page 2
2012-04-04
BSC047N08NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
3600
4800
-
960
1300
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=40 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
36
-
Turn-on delay time
t d(on)
-
18
-
Rise time
tr
-
17
-
Turn-off delay time
t d(off)
-
44
-
Fall time
tf
-
11
-
Gate to source charge
Q gs
-
16
-
Gate charge at threshold
Q g(th)
-
10
-
Gate to drain charge
Q gd
-
10
-
S it hi charge
Switching
h
Q sw
-
17
-
Gate charge total
Qg
-
52
69
Gate plateau voltage
V plateau
-
4.8
-
Output charge
Q oss
-
70
93
nC
-
-
100
A
-
-
400
-
1.0
1.2
V
-
61
-
ns
-
109
-
nC
V DD=40 V, V GS=10 V,
I D=25 A, R G=1.6 Ω
ns
Gate Charge Characteristics5)
V DD=40 V, I D=25 A,
V GS=0 to 10 V
V DD=40 V, V GS=0 V
nC
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=40 V, I F=25A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.7
page 3
2012-04-04
BSC047N08NS3 G
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
150
120
125
100
100
80
ID [A]
Ptot [W]
1 Power dissipation
75
60
50
40
25
20
0
0
0
25
50
75
100
125
150
175
0
25
50
75
TC [°C]
100
125
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
10 µs
102
1
ZthJC [K/W]
100 µs
ID [A]
150
101
1 ms
10 ms
0.5
0.2
0.1
0.1
0.05
DC
100
0.02
0.01
single pulse
10-1
100
101
102
0
0
0
0
0
1
10-5
10-4
10-3
10-2
10-1
100
tp [s]
VDS [V]
Rev. 2.7
0.01
10-6
0
10-1
page 4
2012-04-04
BSC047N08NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
160
20
10 V
4.5 V
6V
5V
15
5.5 V
RDS(on) [mΩ]
ID [A]
120
80
10
5.5 V
5V
6V
40
5
10 V
4.5 V
0
0
0
1
2
3
0
20
VDS [V]
40
60
80
100
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
160
120
110
140
100
120
90
80
100
gfs [S]
ID [A]
70
60
80
50
60
40
40
30
150 °C
20
25 °C
20
10
0
0
0
1
2
3
4
5
6
VGS [V]
Rev. 2.7
0
40
80
120
160
ID [A]
page 5
2012-04-04
BSC047N08NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
10
4
8
3
900 µA
VGS(th) [V]
RDS(on) [mΩ]
90 µA
6
max
typ
4
2
1
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
Ciss
103
25 °C
Coss
150 °C
100
IF [A]
C [pF]
150°C, max
102
25°C, max
Crss
10
101
100
1
0
20
40
60
80
VDS [V]
Rev. 2.7
0.0
0.5
1.0
1.5
2.0
VSD [V]
page 6
2012-04-04
BSC047N08NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=25 A pulsed
parameter: T j(start)
parameter: V DD
12
100
40 V
10
VGS [V]
IAV [A]
125 °C
16 V
8
25 °C
100 °C
10
64 V
6
4
2
1
0
0.1
1
10
100
0
1000
10
tAV [µs]
20
30
40
50
60
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
100
V GS
Qg
90
VBR(DSS) [V]
80
70
V g s(th)
60
50
Q g (th)
Q sw
Q gs
40
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.7
page 7
2012-04-04
BSC047N08NS3 G
PG-TDSON-8
Rev. 2.7
page 8
2012-04-04
BSC047N08NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
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reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
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Rev. 2.7
page 9
2012-04-04
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