Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMZ09312B
Rev. 2, 12/2014
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMZ09312BT1
High Efficiency/Linearity Amplifier
The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT
amplifier designed for use as a linear driver amplifier in wireless base station
applications as well as an output stage in femtocell or repeater applications. It
is suitable for applications with frequencies from 400 to 1000 MHz such as
CDMA, GSM, LTE and ZigBeeR at operating voltages from 3 to 5 Volts.
400--1000 MHz, 31.7 dB
29.6 dBm
InGaP HBT LINEAR AMPLIFIER
 Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 74 mA
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
PAE
(%)
Test Signal
900 MHz
24
31.5
--50.0
26.0
IS--95 CDMA
900 MHz
18.0
31.5
--50.0
10.8
1C W--CDMA TM1
900 MHz
17.0
31.5
--50.0
9.0
10 MHz LTE TM1.1
750 MHz
17.5
32.0
--50.0
15.3
LTE 10/20 MHz
450 MHz
29
33.0
--40.0
57.0
ZigBee
QFN 3  3
Features










Frequency: 400--1000 MHz
P1dB: 29.6 dBm @ 900 MHz
Power Gain: 31.7 dB @ 900 MHz
OIP3: 42 dBm @ 900 MHz
Active Bias Control (adjustable externally)
Single 3 to 5 V Supply
Performs Well with Digital Predistortion Systems
Single--ended Power Detector
Cost--effective 12--pin, 3 mm QFN Surface Mount Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Characteristic
Symbol
450
MHz
900
MHz
Unit
Small--Signal Gain (S21)
Gp
33.8
31.7
dB
Input Return Loss (S11)
IRL
--22
--15
dB
Output Return Loss (S22)
ORL
--25
--18
dB
Power Output @ 1dB
Compression
P1dB
28.8
29.6
dBm
Symbol
Value
Unit
Supply Voltage
VCC
6
V
Supply Current
ICC
550
mA
RF Input Power
Pin
14
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
175
C
1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25C, 50 ohm system, CW
Application Circuit
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 84C, VCC1 = VCC2 = VBIAS = 5 Vdc
Symbol
Value (2)
Unit
RJC
56
C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2011--2012, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
1
Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale CW
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
29
31.7
—
dB
Input Return Loss (S11)
IRL
—
--15
—
dB
Output Return Loss (S22)
ORL
—
--18
—
dB
Power Output @ 1dB Compression
P1dB
—
29.6
—
dBm
Third Order Output Intercept Point, Two--Tone CW
OIP3
—
42
—
dBm
Noise Figure
NF
—
4
—
dB
Supply Current
ICQ
69
74
83
mA
Supply Voltage
VCC
—
5
—
V
Table 5. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Meets 2000 V for all pins except:
Pin 11 meets 400 V
Pin 8 meets 200 V
Class 0 Rating
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
VBA2
VBA1
VCC1
Rating
Package Peak Temperature
Unit
1
260
C
GND
BIAS
CIRCUIT
RFout
VBIAS
RFin
RFout
GND
VBA2 VCC1 GND
VCC2
GND
12
11
10
VBA1
1
9
VCC2
VBIAS
2
8
RFout
RFin
3
7
RFout
4
5
6
GND GND PDET
PDET
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
MMZ09312BT1
2
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
VCC1
L4
C1
R2
R1
12
1
C2
11
VCC2
C3
10
L3
9
BIAS
CIRCUIT
C10
RF
OUTPUT
C5
8
2
L5
C11
RF
INPUT
L2
7
3
L1
4
5
6
PDET
C4
Figure 3. MMZ09312B Test Circuit Schematic — CDMA IS--95, 900 MHz, 5.0 V
Table 7. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 5.0 V
Part
Description
Part Number
Manufacturer
C1, C2
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C3
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C4
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C5
100 pF Chip Capacitor
GRM1555C1H101JA01
Murata
C6, C7, C8, C9
Components Not Placed
C10
4.7 pF Chip Capacitor
04023J4R7BBSTR
AVX
C11
6.8 pF Chip Capacitor
04023J6R8BBSTR
AVX
L1
8.2 nH Chip Inductor
LL1608--FSL8N2JL
TOKO
L2
1.2 nH Chip Inductor
LL1608--FSL1N2S
TOKO
L3
33 nH Chip Inductor
0402CS--33NXGLW
Coilcraft
L4
22 nH Chip Inductor
0402CS--22NXGLW
Coilcraft
L5
3.3 nH Chip Inductor
0603CS--3N3XJLW
Coilcraft
R1
330 , 1/16 W Chip Resistor
RC0402JR--07331RL
Yageo
R2
1.5 k, 1/16 W Chip Resistor
RC0402JR--07152RL
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
Isola
Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed.
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
3
VCC2
VCC1
VBIAS(1)
C1
C2
R3*
C3
L4
R2
C9*
R1
RFIN
L3
C8*
RFOUT
C6*
C10
C5
L5
L1
L2
C11
C7*
C4
QFN 3x3--12M
Rev. 1
PDET
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed.
Figure 4. MMZ09312B Test Circuit Component Layout — CDMA IS--95, 900 MHz, 5.0 V
Table 7. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 5.0 V
Part
Description
Part Number
Manufacturer
C1, C2
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C3
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C4
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C5
100 pF Chip Capacitor
GRM1555C1H101JA01
Murata
C6, C7, C8, C9
Components Not Placed
C10
4.7 pF Chip Capacitor
04023J4R7BBSTR
AVX
C11
6.8 pF Chip Capacitor
04023J6R8BBSTR
AVX
L1
8.2 nH Chip Inductor
LL1608--FSL8N2JL
TOKO
L2
1.2 nH Chip Inductor
LL1608--FSL1N2S
TOKO
L3
33 nH Chip Inductor
0402CS--33NXGLW
Coilcraft
L4
22 nH Chip Inductor
0402CS--22NXGLW
Coilcraft
L5
3.3 nH Chip Inductor
0603CS--3N3XJLW
Coilcraft
R1
330 , 1/16 W Chip Resistor
RC0402JR--07331RL
Yageo
R2
1.5 k, 1/16 W Chip Resistor
RC0402JR--07152RL
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
(Test Circuit Component Designations and Values table repeated for reference.)
Isola
MMZ09312BT1
4
RF Device Data
Freescale Semiconductor, Inc.
--6
40
--8
35
--10
30
--12
25
S21 (dB)
S11 (dB)
TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 5.0 V
85C
--14
--40C
--16
--20
700
820
880
940
85C
20
10
VCC1 = VCC2 = VBIAS = 5 Vdc
760
25C
15
25C
--18
--40C
1000
5
700
VCC1 = VCC2 = VBIAS = 5 Vdc
760
820
880
940
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S21 versus Frequency versus
Temperature
1000
0
--5
S22 (dB)
--10
--40C
--15
25C
--20
85C
--25
--30
--35
700
VCC1 = VCC2 = VBIAS = 5 Vdc
760
820
880
940
1000
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency versus
Temperature
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 5.0 V
300
--30
--42
270
180
--48
--40C
ACPR
--54
11
13
15
17
21
19
23
25
120
90
60
25C
--57
--60
150
85C
--40C
--51
210
85C
25C
--45
240
ICC
30
ICC, COLLECTOR CURRENT (mA)
ACPR (dBc)
VCC1 = VCC2 = VBIAS = 5 Vdc, f = 900 MHz
--33 Single--Carrier IS--95, 9 Channel Forward
--36 750 kHz Measurement Offset
30 kHz Measurement Bandwidth
--39
0
27
Pout, OUTPUT POWER (dBm)
34
Gain
50
25C
--40C
45
40
Gps, POWER GAIN (dB)
32
30
28 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 900 MHz
26 Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
24 30 kHz Measurement Bandwidth
22
85C
10
25C
5
16
11
20
15
PAE
18
30
25
--40C
20
35
85C
13
15
17
19
21
23
25
PAE, POWER ADDED EFFICIENCY (%)
36
0
27
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
Figure 8. ACPR versus Collector Current versus
Output Power versus Temperature
32
--40C
25C
30
85C
28
26
24
22
20
VCC1 = VCC2 = VBIAS = 5 Vdc
18
700
760
820
880
940
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 9. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
Figure 10. P1dB versus Frequency versus
Temperature, CW
1000
PDET, POWER DETECTOR (V)
2
1.8 VCC1 = VCC2 = VBIAS = 5 Vdc, f = 900 MHz
Single--Carrier IS--95, 9 Channel Forward
1.6 750 kHz Measurement Offset
1.4 30 kHz Measurement Bandwidth
--40C
1.2
85C
1
0.8
25C
0.6
0.4
0.2
0
11
13
15
17
19
21
23
25
27
Pout, OUTPUT POWER (dBm)
Figure 11. Power Detector versus Output Power
versus Temperature
MMZ09312BT1
6
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
VCC1
L4
C1
R2
R1
12
1
C2
11
VCC2
C3
10
L3
9
BIAS
CIRCUIT
C10
RF
OUTPUT
C5
8
2
L5
C11
RF
INPUT
L2
7
3
L1
4
5
6
PDET
C4
Figure 12. MMZ09312B Test Circuit Schematic — UMTS/LTE, 900 MHz, 5.0 V
Table 8. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 5.0 V
Part
Description
Part Number
Manufacturer
C1, C2
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C3
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C4
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C5
100 pF Chip Capacitor
GRM1555C1H101JA01
Murata
C6, C7, C8, C9
Components Not Placed
C10
3.9 pF Chip Capacitor
04023J3R9BBSTR
AVX
C11
5.6 pF Chip Capacitor
04023J5R6BBSTR
AVX
L1
8.2 nH Chip Inductor
LL1608--FSL8N2JL
TOKO
L2
1.2 nH Chip Inductor
LL1608--FSL1N2S
TOKO
L3
33 nH Chip Inductor
0402CS--33NXGLW
Coilcraft
L4
22 nH Chip Inductor
0402CS--22NXGLW
Coilcraft
L5
3.3 nH Chip Inductor
0603CS--3N3XJLW
Coilcraft
R1
330 , 1/16 W Chip Resistor
RC0402JR--07331RL
Yageo
R2
1.5 k, 1/16 W Chip Resistor
RC0402JR--07152RL
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
Isola
Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed.
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
7
VCC2
VCC1
VBIAS(1)
C1
C2
R3*
C3
L4
R2
C9*
R1
RFIN
L3
C8*
RFOUT
C6*
C10
C5
L5
L1
L2
C11
C7*
C4
QFN 3x3--12M
Rev. 1
PDET
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed.
Figure 13. MMZ09312B Test Circuit Component Layout — UMTS/LTE, 900 MHz, 5.0 V
Table 8. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 5.0 V
Part
Description
Part Number
Manufacturer
C1, C2
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C3
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C4
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C5
100 pF Chip Capacitor
GRM1555C1H101JA01
Murata
C6, C7, C8, C9
Components Not Placed
C10
3.9 pF Chip Capacitor
04023J3R9BBSTR
AVX
C11
5.6 pF Chip Capacitor
04023J5R6BBSTR
AVX
L1
8.2 nH Chip Inductor
LL1608--FSL8N2JL
TOKO
L2
1.2 nH Chip Inductor
LL1608--FSL1N2S
TOKO
L3
33 nH Chip Inductor
0402CS--33NXGLW
Coilcraft
L4
22 nH Chip Inductor
0402CS--22NXGLW
Coilcraft
L5
3.3 nH Chip Inductor
0603CS--3N3XJLW
Coilcraft
R1
330 , 1/16 W Chip Resistor
RC0402JR--07331RL
Yageo
R2
1.5 k, 1/16 W Chip Resistor
RC0402JR--07152RL
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
(Test Circuit Component Designations and Values table repeated for reference.)
Isola
MMZ09312BT1
8
RF Device Data
Freescale Semiconductor, Inc.
0
40
--5
35
--10
30
--15
25
S21 (dB)
S11 (dB)
TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 5.0 V
--20
15
--25
--30
--35
800
20
10
VCC1 = VCC2 = VBIAS = 5 Vdc
860
920
980
1040
1100
5
800
VCC1 = VCC2 = VBIAS = 5 Vdc
860
920
980
1040
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 14. S11 versus Frequency
Figure 15. S21 versus Frequency
1100
0
--5
S22 (dB)
--10
--15
--20
--25
--30
--35
800
VCC1 = VCC2 = VBIAS = 5 Vdc
860
920
980
1040
1100
f, FREQUENCY (MHz)
Figure 16. S22 versus Frequency
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
9
TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 5.0 V
36
34
45
Gain
Gps, POWER GAIN (dB)
32
30
40
35
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 900 MHz, W--CDMA
28
30
26
25
24
20
22
15
20
10
PAE
18
5
16
11
13
15
17
19
21
23
25
PAE, POWER ADDED EFFICIENCY (%)
50
0
27
Pout, OUTPUT POWER (dBm)
Figure 17. Power Gain and Power Added
Efficiency versus Output Power
2
--35
Vdet, POWER DETECTOR OUTPUT (V)
--30
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 900 MHz
ACPR (dBc)
--40
--45
LTE 10 MHz
--50
W--CDMA
--55
--60
6
8
10
12
14
16
18
20
22
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 900 MHz
1.75
1.5
1.25
1
0.75
LTE 10 MHz
W--CDMA
0.5
0.25
0
0
5
10
15
20
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 18. ACPR versus Output Power
Figure 19. Power Detector Output versus
Output Power
25
OPERATING CONDITIONS FOR FIGURES 17--19
W- CDMA
Single--Carrier W--CDMA 3GPP TM1
CF = 9.31 dB, Channel Bandwidth = 3.84 MHz
Adjacent Channel Bandwidth = 3.84 MHz
Channel Offset = 5 MHz
LTE 10 MHz
LTE 10 MHz 3GPP TM1.1
CF = 11.70 dB, Channel Bandwidth = 9 MHz
Adjacent Channel Bandwidth = 9 MHz
Channel Offset = 10 MHz
MMZ09312BT1
10
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
VCC1
L4
C1
R2
R1
12
1
C2
11
VCC2
C3
10
L3
9
BIAS
CIRCUIT
C10
RF
OUTPUT
C5
8
2
L5
C11
RF
INPUT
L2
7
3
L1
4
5
6
PDET
C4
Figure 20. MMZ09312B Test Circuit Schematic — CDMA IS--95, 900 MHz, 3.3 V
Table 9. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 3.3 V
Part
Description
Part Number
Manufacturer
C1, C2
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C3
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C4
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C5
100 pF Chip Capacitor
GRM1555C1H101JA01
Murata
C6, C7, C8, C9
Components Not Placed
C10
4.7 pF Chip Capacitor
04023J4R7BBSTR
AVX
C11
6.8 pF Chip Capacitor
04023J6R8BBSTR
AVX
L1
8.2 nH Chip Inductor
LL1608--FSL8N2JL
TOKO
L2
1.2 nH Chip Inductor
LL1608--FSL1N2S
TOKO
L3
33 nH Chip Inductor
0402CS--33NXGLW
Coilcraft
L4
22 nH Chip Inductor
0402CS--22NXGLW
Coilcraft
L5
3.3 nH Chip Inductor
0603CS--3N3XJLW
Coilcraft
R1
82 , 1/16 W Chip Resistor
RC0402JR--07820RL
Yageo
R2
470 , 1/16 W Chip Resistor
RC0402JR--07471RL
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
Isola
Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed.
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
11
VCC2
VCC1
VBIAS(1)
C1
C2
R3*
C3
L4
R2
C9*
R1
RFIN
L3
C8*
RFOUT
C6*
C10
C5
L5
L1
L2
C11
C7*
C4
QFN 3x3--12M
Rev. 1
PDET
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed.
Figure 21. MMZ09312B Test Circuit Component Layout — CDMA IS--95, 900 MHz, 3.3 V
Table 9. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 3.3 V
Part
Description
Part Number
Manufacturer
C1, C2
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C3
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C4
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C5
100 pF Chip Capacitor
GRM1555C1H101JA01
Murata
C6, C7, C8, C9
Components Not Placed
C10
4.7 pF Chip Capacitor
04023J4R7BBSTR
AVX
C11
6.8 pF Chip Capacitor
04023J6R8BBSTR
AVX
L1
8.2 nH Chip Inductor
LL1608--FSL8N2JL
TOKO
L2
1.2 nH Chip Inductor
LL1608--FSL1N2S
TOKO
L3
33 nH Chip Inductor
0402CS--33NXGLW
Coilcraft
L4
22 nH Chip Inductor
0402CS--22NXGLW
Coilcraft
L5
3.3 nH Chip Inductor
0603CS--3N3XJLW
Coilcraft
R1
82 , 1/16 W Chip Resistor
RC0402JR--07820RL
Yageo
R2
470 , 1/16 W Chip Resistor
RC0402JR--07471RL
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
Isola
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09312BT1
12
RF Device Data
Freescale Semiconductor, Inc.
0
38
--4
34
--8
30
--12
--16
85C
--24
--28
700
760
18
14
25C
VCC1 = VCC2 = VBIAS = 3.3 Vdc
820
880
85C
25C
22
--40C
--20
--40C
26
S21 (dB)
S11 (dB)
TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 3.3 V
940
10
700
1000
VCC1 = VCC2 = VBIAS = 3.3 Vdc
820
760
880
940
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 22. S11 versus Frequency versus
Temperature
Figure 23. S21 versus Frequency versus
Temperature
1000
0
--4
--8
S22 (dB)
25C
--12
--40C
--16
--20
85C
--24
--28
700
VCC1 = VCC2 = VBIAS = 3.3 Vdc
760
820
880
940
1000
f, FREQUENCY (MHz)
Figure 24. S22 versus Frequency versus
Temperature
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
13
TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 3.3 V
400
0
360
320
280
240
--24
--30
--36
200
ICC
25C
85C
--42
--48
--40C
10
12
14
16
120
25C
ACPR
80
85C
--54
--60
160
--40C
20
18
22
40
ICC, COLLECTOR CURRENT (mA)
ACPR (dBc)
VCC1 = VCC2 = VBIAS = 3.3 Vdc, f = 900 MHz
--6 Single--Carrier IS--95, 9 Channel Forward
--12 750 kHz Measurement Offset
30 kHz Measurement Bandwidth
--18
0
26
24
Pout, OUTPUT POWER (dBm)
--40C
Gain
32
25C
Gps, POWER GAIN (dB)
30
35
VCC1 = VCC2 = VBIAS = 3.3 Vdc, f = 900 MHz
Single--Carrier IS--95, 9 Channel Forward
24 750 kHz Measurement Offset
22 30 kHz Measurement Bandwidth
26
20
18
30
85C
25
20
25C
--40C
15
10
PAE
16
5
14
10
45
40
85C
28
50
12
14
16
18
20
22
24
PAE, POWER ADDED EFFICIENCY (%)
34
0
26
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
Figure 25. ACPR versus Collector Current
versus Output Power versus Temperature
30
28
--40C
25C
26
85C
24
22
20
18
VCC1 = VCC2 = VBIAS = 3.3 Vdc
16
700
760
820
880
940
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 26. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
Figure 27. P1dB versus Frequency versus
Temperature, CW
1000
PDET, POWER DETECTOR (V)
3
2.7 VCC1 = VCC2 = VBIAS = 3.3 Vdc, f = 900 MHz
Single--Carrier IS--95, 9 Channel Forward
2.4 750 kHz Measurement Offset
2.1 30 kHz Measurement Bandwidth
--40C
1.8
1.5
85C
1.2
0.9
0.6
25C
0.3
0
10
12
14
16
18
20
22
24
26
Pout, OUTPUT POWER (dBm)
Figure 28. Power Detector versus Output Power
versus Temperature
MMZ09312BT1
14
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
VCC1
L4
C1
R2
R1
12
1
C2
11
VCC2
C3
10
L3
9
BIAS
CIRCUIT
C10
RF
OUTPUT
C5
8
2
L5
C11
RF
INPUT
L2
7
3
L1
4
5
6
PDET
C4
Figure 29. MMZ09312B Test Circuit Schematic — UMTS/LTE, 900 MHz, 3.3 V
Table 10. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 3.3 V
Part
Description
Part Number
Manufacturer
C1, C2
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C3
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C4
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C5
100 pF Chip Capacitor
GRM1555C1H101JA01
Murata
C6, C7, C8, C9
Components Not Placed
C10
3.9 pF Chip Capacitor
04023J3R9BBSTR
AVX
C11
6.8 pF Chip Capacitor
04023J6R8BBSTR
AVX
L1
8.2 nH Chip Inductor
LL1608--FSL8N2JL
TOKO
L2
1.2 nH Chip Inductor
LL1608--FSL1N2S
TOKO
L3
33 nH Chip Inductor
0402CS--33NXGLW
Coilcraft
L4
22 nH Chip Inductor
0402CS--22NXGLW
Coilcraft
L5
3.3 nH Chip Inductor
0603CS--3N3XJLW
Coilcraft
R1
82 , 1/16 W Chip Resistor
RC0402JR--07820RL
Yageo
R2
470 , 1/16 W Chip Resistor
RC0402JR--07471RL
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
Isola
Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed.
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
15
VCC2
VCC1
VBIAS(1)
C1
C2
R3*
C3
L4
R2
C9*
R1
RFIN
L3
C8*
RFOUT
C6*
C10
C5
L5
L1
L2
C11
C7*
C4
QFN 3x3--12M
Rev. 1
PDET
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed.
Figure 30. MMZ09312B Test Circuit Component Layout — UMTS/LTE, 900 MHz, 3.3 V
Table 10. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 3.3 V
Part
Description
Part Number
Manufacturer
C1, C2
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C3
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C4
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C5
100 pF Chip Capacitor
GRM1555C1H101JA01
Murata
C6, C7, C8, C9
Components Not Placed
C10
3.9 pF Chip Capacitor
04023J3R9BBSTR
AVX
C11
6.8 pF Chip Capacitor
04023J6R8BBSTR
AVX
L1
8.2 nH Chip Inductor
LL1608--FSL8N2JL
TOKO
L2
1.2 nH Chip Inductor
LL1608--FSL1N2S
TOKO
L3
33 nH Chip Inductor
0402CS--33NXGLW
Coilcraft
L4
22 nH Chip Inductor
0402CS--22NXGLW
Coilcraft
L5
3.3 nH Chip Inductor
0603CS--3N3XJLW
Coilcraft
R1
82 , 1/16 W Chip Resistor
RC0402JR--07820RL
Yageo
R2
470 , 1/16 W Chip Resistor
RC0402JR--07471RL
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
Isola
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09312BT1
16
RF Device Data
Freescale Semiconductor, Inc.
0
40
--5
35
--10
30
--15
25
S21 (dB)
S11 (dB)
TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 3.3 V
--20
15
--25
--30
--35
800
20
10
VCC1 = VCC2 = VBIAS = 3.3 Vdc
860
920
980
1040
1100
5
800
VCC1 = VCC2 = VBIAS = 3.3 Vdc
860
920
980
1040
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 31. S11 versus Frequency
Figure 32. S21 versus Frequency
1100
0
--5
S22 (dB)
--10
--15
--20
--25
--30
--35
800
VCC1 = VCC2 = VBIAS = 3.3 Vdc
860
920
980
1040
1100
f, FREQUENCY (MHz)
Figure 33. S22 versus Frequency
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
17
TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 3.3 V
36
34
Gps, POWER GAIN (dB)
22.5
Gain
32
30
20
17.5
VCC1 = VCC2 = VBIAS = 3.3 Vdc
f = 900 MHz, W--CDMA
28
15
26
12.5
24
10
22
7.5
20
5
PAE
18
2.5
16
6
8
10
12
14
16
18
20
PAE, POWER ADDED EFFICIENCY (%)
25
0
22
Pout, OUTPUT POWER (dBm)
Figure 34. Power Gain and Power Added
Efficiency versus Output Power
2
--35
Vdet, POWER DETECTOR OUTPUT (V)
--30
VCC1 = VCC2 = VBIAS = 3.3 Vdc
f = 900 MHz
ACPR (dBc)
--40
--45
LTE 10 MHz
--50
W--CDMA
--55
--60
6
8
10
12
14
16
18
20
22
1.75
VCC1 = VCC2 = VBIAS = 3.3 Vdc
f = 900 MHz
1.5
1.25
1
LTE 10 MHz
0.75
W--CDMA
0.5
0.25
0
0
5
10
15
20
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 35. ACPR versus Output Power
Figure 36. Power Detector Output versus
Output Power
25
OPERATING CONDITIONS FOR FIGURES 34--36
W- CDMA
Single--Carrier W--CDMA 3GPP TM1
CF = 9.31 dB, Channel Bandwidth = 3.84 MHz
Adjacent Channel Bandwidth = 3.84 MHz
Channel Offset = 5 MHz
LTE 10 MHz
LTE 10 MHz 3GPP TM1.1
CF = 11.70 dB, Channel Bandwidth = 9 MHz
Adjacent Channel Bandwidth = 9 MHz
Channel Offset = 10 MHz
MMZ09312BT1
18
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
VCC1
L4
C1
R2
R1
12
1
C2
11
VCC2
C3
10
L3
9
BIAS
CIRCUIT
C10
RF
OUTPUT
C5
8
2
L5
C11
RF
INPUT
L2
7
3
L1
4
5
6
PDET
C4
Figure 37. MMZ09312B Test Circuit Schematic — ZigBee, 450 MHz, 5.0 V
Table 11. MMZ09312B Test Circuit Component Designations and Values — ZigBee, 450 MHz, 5.0 V
Part
Description
Part Number
Manufacturer
C1, C2
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C3
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C4
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C5
100 pF Chip Capacitor
GRM1555C1H101JA01
Murata
C6, C7, C8, C9
Components Not Placed
C10
3.9 pF Chip Capacitor
04023J3R9BBSTR
AVX
C11
10 pF Chip Capacitor
04023J10R0BBSTR
AVX
L1
18 nH Chip Inductor
LL1608--FSL18N0S
TOKO
L2
1.2 nH Chip Inductor
LL1608--FSL1N2S
TOKO
L3
3.9 nH Chip Inductor
LL1608--FSL3N9S
TOKO
L4
12 nH Chip Inductor
LL1608--FSL12N0S
TOKO
L5
12 nH Chip Inductor
0603CS--12NXJL
Coilcraft
R1
330 , 1/16 W Chip Resistor
RC0402JR--07331RL
Yageo
R2
1.5 k, 1/16 W Chip Resistor
RC0402JR--07152RL
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
Isola
Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed.
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
19
VCC2
VCC1
VBIAS(1)
C1
C2
R3*
C3
L4
R2
C9*
R1
RFIN
L3
C8*
RFOUT
C6*
C10
C5
L5
L1
L2
C11
C7*
C4
QFN 3x3--12M
Rev. 1
PDET
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed.
Figure 38. MMZ09312B Test Circuit Component Layout — ZigBee, 450 MHz, 5.0 V
Table 11. MMZ09312B Test Circuit Component Designations and Values — ZigBee, 450 MHz, 5.0 V
Part
Description
Part Number
Manufacturer
C1, C2
1 F Chip Capacitors
GRM155R61A105KE15
Murata
C3
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C4
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C5
100 pF Chip Capacitor
GRM1555C1H101JA01
Murata
C6, C7, C8, C9
Components Not Placed
C10
3.9 pF Chip Capacitor
04023J3R9BBSTR
AVX
C11
10 pF Chip Capacitor
04023J10R0BBSTR
AVX
L1
18 nH Chip Inductor
LL1608--FSL18N0S
TOKO
L2
1.2 nH Chip Inductor
LL1608--FSL1N2S
TOKO
L3
3.9 nH Chip Inductor
LL1608--FSL3N9S
TOKO
L4
12 nH Chip Inductor
LL1608--FSL12N0S
TOKO
L5
12 nH Chip Inductor
0603CS--12NXJL
Coilcraft
R1
330 , 1/16 W Chip Resistor
RC0402JR--07331RL
Yageo
R2
1.5 k, 1/16 W Chip Resistor
RC0402JR--07152RL
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
Isola
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09312BT1
20
RF Device Data
Freescale Semiconductor, Inc.
--5
40
--10
35
--15
30
--20
25
S21 (dB)
S11 (dB)
TYPICAL CHARACTERISTICS — ZIGBEE, 450 MHz, 5.0 V
--25
--30
15
--35
--40
400
20
10
VCC1 = VCC2 = VBIAS = 5 Vdc
460
520
580
640
700
5
400
VCC1 = VCC2 = VBIAS = 5 Vdc
460
520
580
640
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 39. S11 versus Frequency
Figure 40. S21 versus Frequency
700
0
--5
S22 (dB)
--10
--15
--20
--25
--30
--35
400
VCC1 = VCC2 = VBIAS = 5 Vdc
460
520
580
640
700
f, FREQUENCY (MHz)
Figure 41. S22 versus Frequency
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
21
50
45
Gain
Gps, POWER GAIN (dB)
34
40
35
32
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 450 MHz
30
28
30
25
26
20
24
15
PAE
22
10
20
5
18
0
29
15
17
19
21
23
25
27
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
38
36
PAE, POWER ADDED EFFICIENCY (%)
TYPICAL CHARACTERISTICS — ZIGBEE, 450 MHz, 5.0 V
32
30
28
26
24
22
20
VCC1 = VCC2 = VBIAS = 5 Vdc
18
400
440
480
520
560
600
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 42. Power Gain versus Power Added
Efficiency versus Output Power, CW
Figure 43. P1dB versus Frequency, CW
640
4
PDET, POWER DETECTOR (V)
3.6
3.2
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 450 MHz
2.8
2.4
2
1.6
1.2
0.8
0.4
0
15
17
19
21
23
25
27
29
Pout, OUTPUT POWER (dBm)
Figure 44. Power Detector versus Output Power, CW
MMZ09312BT1
22
RF Device Data
Freescale Semiconductor, Inc.
3.00
0.70
0.30
2.00
3.40
0.50
1.6  1.6 solder pad with
thermal via structure. All
dimensions in mm.
Figure 45. PCB Pad Layout for QFN 3  3
MA03
WLYW
Figure 46. Product Marking
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
23
PACKAGE DIMENSIONS
MMZ09312BT1
24
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
25
MMZ09312BT1
26
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2011
 Initial Release of Data Sheet
1
Feb. 2012
 Typical Performance table: changed Pout at 750 MHz from 19.5 to 17.5 dBm to reflect recent performance
measurements, p. 1
 Figs. 3, 12 and 21, MMZ09312B Test Circuit Schematic: corrected L1 inductor label in test circuit
schematics, pp. 3, 7 and 11
2
Dec. 2014
 Typical Performance table: added 900 MHz, 1C W--CDMA TM1 and 900 MHz, 10 MHz LTE TM1.1, p. 1
 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
 Added application circuit for UMTS/LTE, 900 MHz, 5.0 V as follows: schematic, component designations
and values, component layout, and typical characteristic performance graphs, pp. 7--10
 Added application circuit for UMTS/LTE, 900 MHz, 3.3 V as follows: schematic, component designations
and values, component layout, and typical characteristic performance graphs, pp. 15--18
 Fig. 46, Product Marking: updated date code line to reflect improved traceability information, p. 23
 Added Failure Analysis information, p. 27
MMZ09312BT1
RF Device Data
Freescale Semiconductor, Inc.
27
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
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Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their
respective owners.
E 2011--2012, 2014 Freescale Semiconductor, Inc.
MMZ09312BT1
Document Number: MMZ09312B
Rev. 2, 12/2014
28
RF Device Data
Freescale Semiconductor, Inc.
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