Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMA25312B
Rev. 2, 9/2014
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMA25312BT1
High Efficiency/Linearity Amplifier
The MMA25312B is a 2--stage high efficiency InGaP HBT driver amplifier
designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX
(802.16e) and wireless broadband mesh networks. It is suitable for applications
with frequencies from 2300 to 2700 MHz using simple external matching
components with a 3 to 5 V supply.
2300--2700 MHz, 26 dB
31 dBm
InGaP HBT LINEAR AMPLIFIER
 Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 150 mA
Frequency
Pout
(dBm)
Gps
(dB)
EVM
(%)
Test Signal
2450 MHz
20.5
27.4
3.0
WLAN (802.11g)
2350 MHz
23.0
27.2
3.0
WiMAX (802.16e)
QFN 3  3
Features









Frequency: 2300--2700 MHz
P1dB: 31 dBm @ 2500 MHz
Power Gain: 26 dB @ 2500 MHz
Third Order Output Intercept Point: 40 dBm @ 2500 MHz
Active Bias Control (On--chip)
Single 3 to 5 V Supply
Single--ended Power Detector
Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Table 1. Typical CW Performance (1)
Table 2. Maximum Ratings
Rating
Characteristic
Symbol
2300
MHz
2500
MHz
2700
MHz
Unit
Small--Signal Gain
(S21)
Gp
26
26
24.5
dB
Input Return Loss
(S11)
IRL
--14
--12
--12
dB
Output Return Loss
(S22)
ORL
--11
--13
--15
dB
Power Output @
1dB Compression
P1dB
30
31
29.8
dBm
Symbol
Value
Unit
Supply Voltage
VCC
6
V
Supply Current
ICC
550
mA
RF Input Power
Pin
30
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
175
C
1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25C, 50 ohm system, CW
Application Circuit
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 91C, VCC1 = VCC2 = VBIAS = 5 Vdc
Symbol
Value (2)
Unit
RJC
92
C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2012--2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMA25312BT1
1
Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2500 MHz, TA = 25C, 50 ohm system, in Freescale CW Application
Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
24.5
26
—
dB
Input Return Loss (S11)
IRL
—
--12
—
dB
Output Return Loss (S22)
ORL
—
--13
—
dB
Power Output @ 1dB Compression
P1dB
—
31
—
dBm
Third Order Output Intercept Point, Two--Tone CW
OIP3
—
40
—
dBm
Noise Figure
NF
—
3.8
—
dB
Supply Current
ICQ
110
124
138
mA
Supply Voltage
VCC
—
5
—
V
Table 5. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22--A114)
2
Machine Model (per EIA/JESD 22--A115)
A
Charge Device Model (per JESD 22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
VBA2
VBA1
VCC1
Rating
Package Peak Temperature
Unit
1
260
C
VCC1
VBA2 VCC1 VCC1
RFout
BIAS
CIRCUIT
RFout
VBIAS
VCC2
12
11
10
VBA1
1
9
RFout
VBIAS
2
8
RFout
RFin
3
7
VCC2
4
5
6
N.C. N.C. PDET
RFin
PDET
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
MMA25312BT1
2
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
VCC1
L2
C1
R2
R1
12
1
Z2
11
C2
C7
10
9
BIAS
CIRCUIT
C5
Z1
8
2
RF
OUTPUT
C13
C11
RF
INPUT
7
3
C8
DETECTOR
4
5
VCC2
L3
C14
6
PDET
C9
Z1
Z2
0.140 x 0.030 Microstrip
0.073 x 0.030 Microstrip
Figure 3. MMA25312BT1 Test Circuit Schematic — 2500 MHz, 5 Volt Operation
Table 7. MMA25312BT1 Test Circuit Component Designations and Values — 2500 MHz, 5 Volt Operation
Part
Description
C1, C2
1 F Chip Capacitors
C3, C4, C6, C10, C12, C15
Components Not Placed
C5, C9
C7
Part Number
Manufacturer
GRM155R61A105KE15
Murata
100 pF Chip Capacitors
GRM1555C1H101JA01
Murata
8.2 pF Chip Capacitor
04023J8R2BBS
AVX
C8, C13
22 pF Chip Capacitors
04023J22R0BBS
AVX
C11
1.5 pF Chip Capacitor
04023J1R5BBS
AVX
C14
4.7 F Chip Capacitor
GRM188R60J475KE19D
Murata
L2
1.2 nH Chip Inductor
LL1608-FH1N2S
TOKO
L3
22 nH Chip Inductor
LL1608-FH22N0S
TOKO
R1
330 , 1/16 W Chip Resistor
RC0402JR-07330RL
Yageo
R2
1210 , 1/16 W Chip Resistor
RC0402JR-071K21L
Yageo
R3
Component Not Placed
PCB
0.014, r = 3.7
FR408
Isola
Note: Component numbers C3, C4, C6, C10, C12, C15 and R3 are labeled on board but not placed.
Note: Component L1 intentionally omitted.
MMA25312BT1
RF Device Data
Freescale Semiconductor, Inc.
3
VCC1
VBIAS(1)
C2
C1
R3*
C3*
L2
R1
RFIN
C6*
C4*
R2
RFOUT
C7
C5
C12*
C11
C13
C8
C10*
C9
C14
L3
C15*
QFN 3x3--12N
Rev. 0
VCC2
VDECT
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C3*, C4*, C6*, C10*, C12*, C15* and R3* are labeled on board
but not placed.
Figure 4. MMA25312BT1 Test Circuit Component Layout — 2500 MHz, 5 Volt Operation
Table 7. MMA25312BT1 Test Circuit Component Designations and Values — 2500 MHz, 5 Volt Operation
Part
Description
C1, C2
1 F Chip Capacitors
C3, C4, C6, C10, C12, C15
Components Not Placed
C5, C9
C7
Part Number
Manufacturer
GRM155R61A105KE15
Murata
100 pF Chip Capacitors
GRM1555C1H101JA01
Murata
8.2 pF Chip Capacitor
04023J8R2BBS
AVX
C8, C13
22 pF Chip Capacitors
04023J22R0BBS
AVX
C11
1.5 pF Chip Capacitor
04023J1R5BBS
AVX
C14
4.7 F Chip Capacitor
GRM188R60J475KE19D
Murata
L2
1.2 nH Chip Inductor
LL1608-FH1N2S
TOKO
L3
22 nH Chip Inductor
LL1608-FH22N0S
TOKO
R1
330 , 1/16 W Chip Resistor
RC0402JR-07330RL
Yageo
R2
1210 , 1/16 W Chip Resistor
RC0402JR-071K21L
Yageo
R3
Component Not Placed
FR408
Isola
PCB
0.014, r = 3.7
Note: Component L1 intentionally omitted.
(Component Designations and Values table repeated for reference.)
MMA25312BT1
4
RF Device Data
Freescale Semiconductor, Inc.
3.00
0.70
0.30
2.00
3.40
0.50
1.6  1.6 solder pad with
thermal via structure. All
dimensions in mm.
Figure 5. PCB Pad Layout for QFN 3  3
MA04
WLYW
Figure 6. Product Marking
MMA25312BT1
RF Device Data
Freescale Semiconductor, Inc.
5
PACKAGE DIMENSIONS
MMA25312BT1
6
RF Device Data
Freescale Semiconductor, Inc.
MMA25312BT1
RF Device Data
Freescale Semiconductor, Inc.
7
MMA25312BT1
8
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3100: General Purpose Amplifier and MMIC Biasing
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2012
 Initial Release of Data Sheet
1
Mar. 2013
 Added typical performance bullet and frequency table for WLAN (802.11g) and WiMAX (802.16e), p. 1
 Table 7, Test Circuit Component Designations and Values -- 2500 MHz, 5 Volt Operation: updated R1
description from 430 , 1/16  Chip Resistor to 330 , 1/16 W Chip Resistor and R1 part number from
RC0402JR--07430RL to RC0402JR--07330RL. Updated R2 description from 1.6 k, 1/16 W Chip
Resistor to 1210 , 1/16 W Chip Resistor and R2 part number from RC0402JR--071K60L to
RC0402JR--071K21L to reflect WiMAX, WLAN circuit performance, pp. 3, 4
 Removed Fig. 5, Test Circuit Schematic -- 2500 MHz, 3.3 Volt Operation, Table 8, Test Circuit Component
Designations and Values -- 2500 MHz, 3.3 Volt Operation and Fig. 6, Test Circuit Component Layout -2500 MHz, 3.3 Volt Operation, pp. 5, 6
2
Sept. 2014
 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
 Added Failure Analysis information, p. 9
MMA25312BT1
RF Device Data
Freescale Semiconductor, Inc.
9
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E 2012--2014 Freescale Semiconductor, Inc.
MMA25312BT1
Document Number: MMA25312B
Rev. 2, 9/2014
10
RF Device Data
Freescale Semiconductor, Inc.
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