Data Sheet

Freescale Semiconductor
Technical Data
Document Number: A2T21S260--12S
Rev. 0, 8/2015
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 65 W RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 2110 to 2170 MHz.
A2T21S260--12SR3
2100 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 1200 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
18.5
30.4
6.9
–32.6
–17
2140 MHz
18.6
30.3
6.8
–32.8
–13
2170 MHz
18.7
30.6
6.8
–32.0
–11
2110–2170 MHz, 65 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Features
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
NI--780S--2L2L
4 VBW (1)
RFin/VGS 1
3 RFout/VDS
2 VBW (1)
(Top View)
Figure 1. Pin Connections
1. Device cannot operate with VDD current
supplied through pin 2 and pin 4.
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2T21S260--12SR3
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
–40 to +225
C
CW
346
3.1
W
W/C
Symbol
Value (2,3)
Unit
RJC
0.28
C/W
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76C, 65 W CW, 28 Vdc, IDQ = 1200 mA, 2140 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGS(Q)
1.4
1.9
2.2
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 65 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1.
2.
3.
4.
Gps
18.0
18.7
21.0
dB
D
29.0
30.6
—
%
PAR
6.3
6.8
—
dB
ACPR
—
–32.0
–29.0
dBc
IRL
—
–11
–8
dB
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.freescale.com/rf/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
Part internally matched both on input and output.
(continued)
A2T21S260--12SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1200 mA, f = 2140 MHz, 12 sec(on), 12% Duty Cycle
VSWR 5:1 at 32 Vdc, 290 W Pulsed CW Output Power
(0 dB Input Overdrive from 208 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 2110–2170 MHz Bandwidth
Pout @ 1 dB Compression Point, Pulse
P1dB
—
208
—
W

—
–20.9
—

VBWres
—
90
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 65 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.015
—
dB/C
P1dB
—
0.013
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C) (1)
Table 5. Ordering Information
Device
A2T21S260--12SR3
Tape and Reel Information
R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel
Package
NI--780S--2L2L
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
A2T21S260--12SR3
RF Device Data
Freescale Semiconductor, Inc.
3
VDD
C9
VGG
C10
R1
C11
C7
C5
C6
CUT OUT AREA
C1
C2
C3
C4
C15
C8
C16
C12
R2
C13
VGG
C14
VDD
A2T21S260--12S
Rev. 1
D65935
Figure 2. A2T21S260--12SR3 Test Circuit Component Layout
Table 6. A2T21S260--12SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4, C6, C16
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C2
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C3, C5, C7, C8, C10, C13
10 uF Chip Capacitors
C5750X7S2A106M230KB
TDK
C9, C14
470 uF, 100 V Electrolytic Capacitors
MCGPR100V477M16X32-RH
Multicomp
C11, C12
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C15
0.1 pF Chip Capacitor
ATC600F0R1BT250XT
ATC
R1, R2
2.2 Ω, 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D65939
MTL
A2T21S260--12SR3
4
RF Device Data
Freescale Semiconductor, Inc.
18.8
31
30.5
D
18.7
30
Gps
18.6
IRL
18.5
PARC
18.4
–29
–5
–30
–10
–31
18.3
–32
18.2
–33
18.1
2060
ACPR
2080
2100
2120 2140 2160
f, FREQUENCY (MHz)
2180
2200
–15
–20
–25
–34
2220
–30
–2.6
–2.8
–3
–3.2
–3.4
PARC (dB)
18.9
31.5
IRL, INPUT RETURN LOSS (dB)
19
Gps, POWER GAIN (dB)
32
VDD = 28 Vdc, Pout = 65 W (Avg.), IDQ = 1200 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
ACPR (dBc)
19.1
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
–3.6
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 65 Watts Avg.
0
VDD = 28 Vdc, Pout = 162 W (PEP)
IDQ = 1200 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
–15
IM3--U
–30
IM3--L
–45
IM5--U
IM5--L
IM7--L
–60
IM7--U
–75
1
10
100
200
TWO--TONE SPACING (MHz)
18.8
0
18.6
18.4
18.2
18
17.8
VDD = 28 Vdc, IDQ = 1200 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
–2
–5
20
25
20
–3 dB = 64 W
PARC
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
35
–25
30
–2 dB = 49 W
–4
35
ACPR
–1 dB = 35 W
–3
–20
D
Gps
–1
40
50
65
Pout, OUTPUT POWER (WATTS)
80
–30
–35
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
–40
15
–45
10
95
–50
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2T21S260--12SR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
20
18
2140 MHz
14
2110 MHz
12
50
–10
ACPR
30
2170 MHz
20
2110 MHz
2140 MHz
2170 MHz
Gps
10
0
400
100
10
Pout, OUTPUT POWER (WATTS) AVG.
1
0
40
2170 MHz
2110 MHz 2140 MHz
16
10
D
60
–20
–30
–40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 1200 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
D, DRAIN EFFICIENCY (%)
22
–50
–60
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
6
27
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1200 mA
24
0
–6
Gain
18
--12
15
--18
--24
12
IRL
9
1700
IRL (dB)
GAIN (dB)
21
1850
2000
2150 2300 2450
f, FREQUENCY (MHz)
2600
2750
--30
2900
Figure 7. Broadband Frequency Response
A2T21S260--12SR3
6
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Load Pull Performance — Maximum Power Tuning — Class AB
VDD = 28 Vdc, IDQ = 1181 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.87 – j5.93
2.53 + j5.00
1.28 – j3.01
18.5
55.3
337
58.4
–19
2140
3.74 – j6.26
3.18 + j5.38
1.32 – j2.92
18.9
55.1
327
57.5
–20
2170
5.24 – j6.85
4.26 + j5.74
1.27 – j2.92
18.9
55.2
328
56.6
–20
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.87 – j5.93
2.60 + j5.30
1.28 – j3.18
16.3
56.0
397
60.1
–24
2140
3.74 – j6.26
3.35 + j5.73
1.35 – j3.09
16.7
55.8
383
59.0
–26
2170
5.24 – j6.85
4.63 + j6.10
1.33 – j3.13
16.7
55.8
384
58.5
–26
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Load Pull Performance — Maximum Drain Efficiency Tuning — Class AB
VDD = 28 Vdc, IDQ = 1181 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.87 – j5.93
2.62 + j5.21
2.58 – j1.61
21.3
53.2
208
70.0
–30
2140
3.74 – j6.26
3.31 + j5.58
2.27 – j1.61
21.4
53.3
213
67.7
–30
2170
5.24 – j6.85
4.49 + j5.93
2.03 – j1.59
21.5
53.4
220
68.5
–31
Max Drain Efficiency
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.51 – j2.06
18.9
54.3
268
70.6
–35
3.50 + j5.81
2.45 – j1.78
19.2
54.0
250
68.6
–38
4.79 + j6.16
2.15 – j1.87
19.2
54.3
270
69.2
–37
f
(MHz)
Zsource
()
Zin
()
2110
2.87 – j5.93
2.66 + j5.40
2140
3.74 – j6.26
2170
5.24 – j6.85
Zload
()
(2)
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
A2T21S260--12SR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz — CLASS AB
0
0
–0.5
–0.5
51
51.5
–1.5
E
–2
53.5
–2.5
P
–3
54.5
55
–3.5
–4
52
52.5
53
1.5
1
2
3
3.5
REAL ()
4
4.5
5
IMAGINARY ()
IMAGINARY ()
21.5
21
–2.5
20.5
P
2
54
58
56
2
2.5
3
3.5
REAL ()
4
4.5
5
–34
2.5
3
REAL ()
–32
3.5
4
4.5
5
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
–30
–28
–1.5
E
–26
–2
–24
–2.5
–4
–22
P
–18
–3.5
19.5
18.5
1.5
1.5
1
–3
20
19
1
54
–1
–2
–4
56
60
–0.5
E
–3.5
52
Figure 9. P1dB Load Pull Efficiency Contours (%)
22
–3
62
P
0
–1
–1.5
64
66
–2.5
–4
22.5
–0.5
E
–2
–3.5
Figure 8. P1dB Load Pull Output Power Contours (dBm)
0
–1.5
–3
54
2.5
52
–1
IMAGINARY ()
IMAGINARY ()
–1
–20
1
1.5
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 11. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T21S260--12SR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz — CLASS AB
0
0
52.5
53
E
–2
–3
53.5
54
54.5
P
55.5
64
62
–3
P
60
58
56
53.5
54
1.5
1
2
2.5
REAL ()
0
3.5
3
–5
4
1.5
1
2
2.5
REAL ()
IMAGINARY ()
E
19
18.5
P
18
17.5
–4
2
2.5
–40
–38
–36
E
–2
–34
–3
–32
–30
P
–28
–26
–4
17
16.5
1.5
4
Figure 13. P3dB Load Pull Efficiency Contours (%)
–1
1
3.5
20
19.5
–3
3
0
20.5
–2
54
52
–1
IMAGINARY ()
–2
66
68
–4
Figure 12. P3dB Load Pull Output Power Contours (dBm)
–5
E
55
–4
–5
52
–1
IMAGINARY ()
IMAGINARY ()
–1
62
54
52
–24
3
3.5
4
–5
1
1.5
2
2.5
3
3.5
REAL ()
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
4
Gain
Drain Efficiency
Linearity
Output Power
A2T21S260--12SR3
RF Device Data
Freescale Semiconductor, Inc.
9
Table 9. Load Pull Performance — Maximum Power Tuning — Class C
VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.40 – j4.69
2.19 + j4.95
1.11 – j3.01
15.1
55.3
341
56.8
–30
2140
3.16 – j5.17
2.83 + j5.43
1.15 – j2.88
15.3
55.3
336
56.9
–31
2170
4.24 – j5.24
3.94 + j5.93
1.13 – j2.89
15.2
55.3
338
56.5
–31
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.40 – j4.69
2.35 + j5.22
1.33 – j3.21
13.2
55.9
393
61.8
–37
2140
3.16 – j5.17
3.15 + j5.73
1.17 – j3.05
13.1
56.0
394
58.4
–38
2170
4.24 – j5.24
4.50 + j6.23
1.15 – j3.05
13.1
56.0
396
58.9
–37
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 10. Load Pull Performance — Maximum Drain Efficiency Tuning — Class C
VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.40 – j4.69
1.98 + j4.94
2.73 – j2.04
16.4
53.5
223
69.7
–39
2140
3.16 – j5.17
2.59 + j5.44
2.50 – j1.84
16.4
53.4
220
68.1
–40
2170
4.24 – j5.24
3.61 + j5.98
2.33 – j1.78
16.3
53.5
226
69.0
–39
Max Drain Efficiency
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.96 – j2.28
14.2
54.0
250
69.6
–47
2.94 + j5.73
2.73 – j1.99
14.2
53.9
247
68.1
–49
4.16 + j6.27
2.56 – j1.69
14.2
53.8
241
69.3
–50
f
(MHz)
Zsource
()
Zin
()
2110
2.40 – j4.69
2.20 + j5.20
2140
3.16 – j5.17
2170
4.24 – j5.24
Zload
()
(2)
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
A2T21S260--12SR3
10
RF Device Data
Freescale Semiconductor, Inc.
P1dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz — CLASS C
–1
52.5
E
–2
53
53.5
–2.5
55
–3.5
1.5
2.5
REAL ()
3
3.5
–4
4
52
1.5
1
58
54 56
2
56
2.5
REAL ()
–2.5
15.5
–3.5
14
1
1.5
15
2
E
–2
2.5
3
3.5
4
–40
–36
P
–3
–4
–34
–32
–30
1
1.5
2
2.5
3
3.5
REAL ()
REAL ()
Figure 18. P1dB Load Pull Gain Contours (dB)
Figure 19. P1dB Load Pull AM/PM Contours ()
NOTE:
4
–38
–3.5
15
14.5
3
–2.5
16
P
–3
E
IMAGINARY ()
–2
3.5
–44
–42
–1.5
–1.5
IMAGINARY ()
62
60
–1
–1
–4
64
Figure 17. P1dB Load Pull Efficiency Contours (%)
Figure 16. P1dB Load Pull Output Power Contours (dBm)
16.5
68
P
–3
54
2
E
66
–3.5
54.5
1
52
–2
–2.5
P
–3
–4
54
–1.5
IMAGINARY ()
IMAGINARY ()
–1.5
–1
52
51.5 52
P
= Maximum Output Power
E
= Maximum Drain Efficiency
4
Gain
Drain Efficiency
Linearity
Output Power
A2T21S260--12SR3
RF Device Data
Freescale Semiconductor, Inc.
11
P3dB – TYPICAL CARRIER LOAD PULL CONTOURS — 2140 MHz — CLASS C
0
0
–0.5
–1
52.5
–1.5
–2
E
IMAGINARY ()
IMAGINARY ()
–1
53
–2.5
53.5
–3
P
55
55.5
–3.5
–4
1.5
1
2
54.5
2.5
54
–2
68
3
3.5
REAL ()
4
4.5
–4
5
E
66
–2.5
64
62
P
–3.5
60
52 54
56
1.5
1
58
56
58
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 21. P3dB Load Pull Efficiency Contours (%)
0
0
14
–0.5
–0.5
–1
–1.5
14.5
–2
E
IMAGINARY ()
–1
IMAGINARY ()
–1.5
–3
Figure 20. P3dB Load Pull Output Power Contours (dBm)
14
–2.5
13.5
–3
12.5
1
1.5
2.5
3
REAL ()
3.5
–50
–2
E
4
4.5
5
Figure 22. P3dB Load Pull Gain Contours (dB)
NOTE:
–48
–46
–2.5
–44
P
–42
–3.5
13
13
2
–52
–1.5
–3
P
–3.5
–4
52 56
54
–0.5
52
–4
–38
–36
1
1.5
2
–40
2.5
3
3.5
REAL ()
4
4.5
5
Figure 23. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T21S260--12SR3
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
A2T21S260--12SR3
RF Device Data
Freescale Semiconductor, Inc.
13
A2T21S260--12SR3
14
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Aug. 2015
Description
 Initial Release of Data Sheet
A2T21S260--12SR3
RF Device Data
Freescale Semiconductor, Inc.
15
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All
other product or service names are the property of their respective owners.
E 2015 Freescale Semiconductor, Inc.
A2T21S260--12SR3
Document Number: A2T21S260--12S
Rev. 0, 8/2015
16
RF Device Data
Freescale Semiconductor, Inc.
Similar pages