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R6020FNX
Datasheet
Nch 600V 20A Power MOSFET
Outline
VDSS
600V
RDS(on) (Max.)
0.25
ID
20A
PD
85W
TO-220FM
(1) (2)
Features
(3)
Inner circuit
(2)
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
(1) Gate
(2) Drain
(3) Source
*1
(1)
4) Gate-source voltage (VGSS) guaranteed to be 30V.
*1 Body Diode
5) Drive circuits can be simple.
(3)
6) Parallel use is easy.
Packaging specifications
7) Pb-free lead plating ; RoHS compliant
Packaging
Application
Bulk
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
Switching Power Supply
500
-
Taping code
R6020FNX
Marking
Absolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
600
V
Tc = 25°C
ID *1
20
A
Tc = 100°C
ID *1
9.9
A
ID,pulse *2
80
A
Gate - Source voltage
VGSS
30
V
Avalanche energy, single pulse
EAS *3
26.7
mJ
Avalanche energy, repetitive
EAR *4
3.5
mJ
Avalanche current
IAR
*3
10
A
Drain - Source voltage
Continuous drain current
Pulsed drain current
Power dissipation (Tc = 25°C)
PD
85
W
Junction temperature
Tj
150
°C
Tstg
55 to 150
°C
dv/dt *5
15
V/ns
Range of storage temperature
Reverse diode dv/dt
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© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2016.02 - Rev.D
Data Sheet
R6020FNX
Absolute maximum ratings
Symbol
Parameter
Conditions
Values
Unit
50
V/ns
VDS = 480V, ID = 20A
Drain - Source voltage slope
dv/dt
Tj = 125°C
Thermal resistance
Values
Symbol
Parameter
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC
-
-
1.47
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
70
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
Electrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
600
-
-
V
Drain - Source avalanche
breakdown voltage
V(BR)DS
VGS = 0V, ID = 20A
-
700
-
V
Tj = 25°C
-
1
100
Tj = 125°C
-
-
10
mA
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
3
-
5
V
Tj = 25°C
-
0.19
0.25

Tj = 125°C
-
0.44
-
f = 1MHz, open drain
-
13.5
-
VDS = 600V, VGS = 0V
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
A
VGS = 10V, ID = 10A
Static drain - source
on - state resistance
Gate input resistance
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© 2015 ROHM Co., Ltd. All rights reserved.
RDS(on)
RG
*6
2/13

2016.02 - Rev.D
Data Sheet
R6020FNX
Electrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Transconductance
gfs *6
VDS = 10V, ID = 10A
7
13
-
Input capacitance
Ciss
VGS = 0V
-
2040
-
Output capacitance
Coss
VDS = 25V
-
1660
-
Reverse transfer capacitance
Crss
f = 1MHz
-
70
-
Effective output capacitance,
energy related
Co(er)
-
107
-
Effective output capacitance,
time related
Turn - on delay time
VGS = 0V
VDS = 0V to 480V
Co(tr)
td(on) *6
tr *6
Rise time
Turn - off delay time
Fall time
*6
td(off)
tf
*6
S
pF
pF
-
108
-
VDD ⋍ 300V, VGS = 10V
-
50
-
ID = 10A
-
70
-
RL = 30
-
170
340
RG = 10
-
40
80
ns
Gate Charge characteristics(Ta = 25C)
Values
Parameter
Symbol
Total gate charge
Qg *6
Gate - Source charge
Qgs
Gate - Drain charge
Qgd *6
Gate plateau voltage
V(plateau)
*6
Conditions
Unit
Min.
Typ.
Max.
VDD ⋍ 300V
-
65
-
ID = 20A
-
15
-
VGS = 10V
-
25
-
VDD ⋍ 300V, ID = 20A
-
7.8
-
nC
V
*1 Limited only by maximum temperature allowed.
*2 Pw  10s, Duty cycle  1%
*3 L ⋍ 500H, VDD = 50V, RG = 25, starting T j = 25°C
*4 L ⋍ 500H, VDD = 50V, RG = 25, starting T j = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
3/13
2016.02 - Rev.D
Data Sheet
R6020FNX
Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Symbol
Inverse diode continuous,
forward current
Conditions
Unit
IS *1
Min.
Typ.
Max.
-
-
20
A
-
-
80
A
-
-
1.5
V
75
105
135
ns
-
0.33
-
C
-
6.3
-
A
-
1100
-
A/s
Tc = 25°C
Inverse diode direct current,
pulsed
ISM
*2
Forward voltage
VSD
*6
VGS = 0V, IS = 20A
trr *6
Reverse recovery time
*6
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm *6
Peak rate of fall of reverse
recovery current
dirr/dt
IS = 20A , VGS=0V
di/dt = 100A/us
Tj = 25°C
Typical Transient Thermal Characteristics
Symbol
Value
Rth1
0.0789
Rth2
0.579
Rth3
2.17
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Unit
K/W
4/13
Symbol
Value
Unit
Cth1
0.00458
Cth2
0.0603
Cth3
0.549
Ws/K
2016.02 - Rev.D
Data Sheet
R6020FNX
Electrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
Operation in this
area is limited
by RDS(ON)
100
10
80
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
120
60
40
20
PW = 100s
1
PW = 1ms
PW = 10ms
0.1
Ta = 25ºC
Single Pulse
0
0.01
0
50
100
150
200
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Normalized Transient Thermal Resistance : r(t)
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.001
0.0001
0.0001 0.001 0.01
0.1
1
10
100 1000
Pulse Width : PW [s]
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© 2015 ROHM Co., Ltd. All rights reserved.
5/13
2016.02 - Rev.D
Data Sheet
R6020FNX
Electrical characteristic curves
Fig.5 Avalanche Power Losses
Fig.4 Avalanche Current vs Inductive Load
5000
14
Ta = 25ºC
VDD = 50V , RG = 25
VGF = 10V , VGR = 0V
Avalanche Power Losses : PAR [W]
Avalanche Current : IAR [A]
12
4500
10
8
6
4
2
0
0.01
0.1
1
10
100
Coil Inductance : L [mH]
Ta = 25ºC
4000
3500
3000
2500
2000
1500
1000
500
0
1.0E+04
1.0E+05
1.0E+06
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : EAS / EAS max. [%]
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
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© 2015 ROHM Co., Ltd. All rights reserved.
6/13
2016.02 - Rev.D
Data Sheet
R6020FNX
Electrical characteristic curves
Fig.7 Typical Output Characteristics(I)
Fig.8 Typical Output Characteristics(II)
20
20
VGS=10.0V
18
VGS=8.0V
14
VGS=7.0V
12
10
8
VGS=6.0V
6
4
Ta=25ºC
pulsed
2
VGS=8.0V
14
VGS=7.0V
12
10
VGS=6.5V
8
6
4
VGS=6.0V
2
0
0
0
5
0
10 15 20 25 30 35 40 45 50
Drain - Source Voltage : VDS [V]
1
2
3
4
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
20
5
VGS = 10V
Ta = 150ºC
Pulsed
Ta = 150ºC
Pulsed
4
VGS = 8.0V
VGS = 10V
VGS = 6.5V
Drain Current : ID [A]
15
VGS = 6.0V
10
5
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
VGS = 7.0V
Drain Current : ID [A]
VGS=10.0V
16
Drain Current : ID [A]
Drain Current : ID [A]
16
Ta=25ºC
pulsed
18
VGS=6.5V
VGS = 5.5V
5
= 5.0V
5.0V
VVGS
GS=
VGS = 6.0V
3
VGS = 5.0V
2
1
VGS = 4.5V
VGS = 4.5V
0
0
0
10
20
30
40
50
0
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
1
7/13
2016.02 - Rev.D
Data Sheet
R6020FNX
Fig.11 Breakdown Voltage
vs. Junction Temperature
Fig.12 Typical Transfer Characteristics
900
100
VDS=10V
pulsed
850
10
Drain Current : ID [A]
800
750
700
650
600
1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1
0.01
550
0.001
500
-50
0
50
100
0.0
150
Junction Temperature : Tj [°C]
2.0
4.0
6.0
8.0
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
Fig.14 Transconductance vs. Drain Current
6
100
VDS=10V
pulsed
VDS=10V
ID=1mA
pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
Electrical characteristic curves
5
4
3
0
50
100
150
Junction Temperature : Tj [°C]
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© 2015 ROHM Co., Ltd. All rights reserved.
1
Ta = 25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
0.1
0.01
0.01
2
-50
10
0.1
1
10
Drain Current : ID [A]
8/13
2016.02 - Rev.D
Data Sheet
R6020FNX
Electrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.6
Ta = 25ºC
Pulsed
0.9
0.8
0.7
0.6
ID=20A
0.5
ID=10A
0.4
0.3
0.2
0.1
0.0
0
2
4
6
8
10 12 14 16 18 20
Static Drain - Source On-State Resistance
: RDS(on) []
Static Drain - Source On-State Resistance
: RDS(on) []
1.0
Gate - Source Voltage : VGS [V]
VGS=10V
pulsed
0.5
0.4
ID=20A
0.3
ID=10A
0.2
0.1
0
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
Static Drain - Source On-State Resistance
: RDS(on) []
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
10
VGS = 10V
Pulsed
1
0.1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.01
0.1
1
10
100
Drain Current : ID [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
9/13
2016.02 - Rev.D
Data Sheet
R6020FNX
Electrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Coss Stored Energy
100000
18
Ta = 25ºC
f = 1MHz
VGS = 0V
Capacitance : C [pF]
Ciss
1000
Coss
100
Crss
10
Coss Stored Energy : EOSS [uJ]
10000
Ta = 25ºC
16
1
14
12
10
8
6
4
2
0
0.01
0.1
1
10
100
1000
0
Drain - Source Voltage : VDS [V]
400
600
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
Fig.21 Dynamic Input Characteristics
10000
12
td(off)
VDD≒300V
VGS=10V
RG=10
Ta=25ºC
Pulsed
Gate - Source Voltage : VGS [V]
1000
Switching Time : t [ns]
200
tf
100
td(on)
tr
10
1
Ta=25ºC
VDD=300V
ID=20A
Pulsed
10
8
6
4
2
0
0.01
0.1
1
10
100
0
20
30
40
50
60
70
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
10
10/13
2016.02 - Rev.D
Data Sheet
R6020FNX
Electrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
VGS = 0V
Pulsed
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
100
10
1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1
Ta=25ºC
VGS=0V
di/dt=100A/s
100
10
0.01
0.0
0.5
1.0
1.5
0
2.0
Source - Drain Voltage : VSD [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
1
10
100
Inverse Diode Forward Current : IS [A]
11/13
2016.02 - Rev.D
Data Sheet
R6020FNX
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
VGS
Fig.1-2 Switching Waveforms
Pulse width
ID
VDS
RL
D.U.T.
50%
10%
VDD
RG
90%
50%
10%
VGS
VDS
10%
90%
td(on)
90%
td(off)
tr
ton
Fig.2-1 Gate Charge Measurement Circuit
VGS
toff
Fig.2-2 Gate Charge Waveform
VG
ID
VDS
Qg
RL
VGS
D.U.T.
IG(Const.)
tf
Qgs
VDD
Qgd
Charge
Fig.3-1 Avalanche Measurement Circuit
VGS
IAS
Fig.3-2 Avalanche Waveform
VDS
L
D.U.T.
V(BR)DSS
IAS
RG
VDD
VDD
EAS =
Fig.4-1 dv/dt Measurement Circuit
VGS
IAS
1
2
V(BR)DSS
V(BR)DSS - VDD
2
L IAS
Fig.4-2 dv/dt Waveform
VDS
L
D.U.T.
V(BR)DSS
RG
IAS
VDD
VDD
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
IF
D.U.T.
IF
L
trr
0
VDD
RG
Irr 10%
DRIVER
MOSFET
Irr
drr / dt
Irr 90%
Irr 100%
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© 2015 ROHM Co., Ltd. All rights reserved.
12/13
2016.02 - Rev.D
Data Sheet
R6020FNX
Dimensions (Unit : mm)
D
TO-220FM
E
A
E1
A1
A
A2
A4
F
φp
b1
L
Q
c
e
b
DIM
A
A1
A2
A4
b
b1
c
D
E
e
E1
F
L
p
Q
x
x
A
MILIMETERS
MIN
MAX
16.60
17.60
1.80
2.20
14.80
15.40
6.80
7.20
0.70
0.85
1.10
1.50
0.70
0.85
9.90
10.30
4.40
4.80
2.54
2.70
3.00
2.80
3.20
11.50
12.50
3.00
3.40
2.10
3.10
0.38
INCHES
MIN
0.654
0.071
0.583
0.268
0.028
0.043
0.028
0.390
0.173
MAX
0.693
0.087
0.606
0.283
0.033
0.059
0.033
0.406
0.189
0.100
0.106
0.110
0.453
0.118
0.083
-
0.118
0.126
0.492
0.134
0.122
0.015
Dimension in mm / inches
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© 2015 ROHM Co., Ltd. All rights reserved.
13/13
2016.02 - Rev.D
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
, transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
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