Datasheet Download

R6008FNX
Nch 600V 8A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on) (Max.)
0.95W
ID
8A
PD
50W
TO-220FM
(1)(2)(3)
lFeatures
lInner circuit
1) Low on-resistance.
(1) Gate
(2) Drain
(3) Source
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
lApplication
Type
Switching Power Supply
Bulk
Reel size (mm)
-
Tape width (mm)
-
Basic ordering unit (pcs)
Taping code
500
-
Marking
R6008FNX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
600
V
Tc = 25°C
ID *1
8
A
Tc = 100°C
ID *1
3.9
A
32
A
Drain - Source voltage
Continuous drain current
Pulsed drain current
ID,pulse
*2
Gate - Source voltage
VGSS
30
V
Avalanche energy, single pulse
EAS *3
4.3
mJ
Avalanche energy, repetitive
EAR *4
3.4
mJ
Avalanche current
IAR *3
4
A
Power dissipation (Tc = 25°C)
PD
50
W
Junction temperature
Tj
150
°C
Tstg
-55 to +150
°C
dv/dt *5
15
V/ns
Range of storage temperature
Reverse diode dv/dt
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© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.10 - Rev.B
Data Sheet
R6008FNX
lAbsolute maximum ratings
Parameter
Symbol
Drain - Source voltage slope
dv/dt
Conditions
VDS = 480V, ID = 8A
Tj = 125°C
Values
Unit
50
V/ns
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - case
RthJC
-
-
2.5
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
70
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Typ.
Max.
600
-
-
V
-
700
-
V
Tj = 25°C
-
1
100
Tj = 125°C
-
-
10
mA
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
2
-
4
V
-
0.73
0.95
W
Tj = 125°C
-
1.62
-
f = 1MHz, open drain
-
8.0
-
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
Drain - Source avalanche
breakdown voltage
V(BR)DS
VGS = 0V, ID = 8A
VDS = 600V, VGS = 0V
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Unit
Min.
IDSS
mA
VGS = 10V, ID = 4A
Static drain - source
on - state resistance
Gate input resistance
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© 2012 ROHM Co., Ltd. All rights reserved.
RDS(on) *6 Tj = 25C
RG
2/13
W
2012.10 - Rev.B
Data Sheet
R6008FNX
lElectrical characteristics(Ta = 25C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
2.5
5
-
Transconductance
gfs *6
VDS = 10V, ID = 4A
Input capacitance
Ciss
VGS = 0V
-
580
-
Output capacitance
Coss
VDS = 25V
-
450
-
Reverse transfer capacitance
Crss
f = 1MHz
-
25
-
Effective output capacitance,
energy related
Co(er)
-
31.5
-
Effective output capacitance,
time related
Turn - on delay time
Co(tr)
31.8
-
VDD ⋍ 300V, VGS = 10V
-
20
-
ID = 4A
-
25
-
td(off) *6
RL = 75W
-
60
120
tf *6
RG = 10W
-
30
60
td(on) *6
Turn - off delay time
Fall time
S
pF
pF
-
tr *6
Rise time
VGS = 0V
VDS = 0V to 480V
Unit
ns
lGate Charge characteristics(Ta = 25C)
Parameter
Symbol
Values
Conditions
Unit
Min.
Typ.
Max.
Total gate charge
Qg *6
VDD ⋍ 300V
-
20
-
Gate - Source charge
Qgs *6
ID = 8A
-
5
-
Gate - Drain charge
Qgd *6
VGS = 10V
-
10
-
Gate plateau voltage
V(plateau)
VDD ⋍ 300V, ID = 8A
-
5.7
-
nC
V
*1 Limited only by maximum temperature allowed.
*2 PW  10ms, Duty cycle  1%
*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C
*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
3/13
2012.10 - Rev.B
Data Sheet
R6008FNX
lBody diode electrical characteristics (Source-Drain)(Ta = 25C)
Parameter
Symbol
Inverse diode continuous,
forward current
Values
Conditions
IS *1
Unit
Min.
Typ.
Max.
-
-
8
A
-
-
32
A
-
-
1.5
V
47
67
87
ns
-
0.17
-
mC
-
4.9
-
A
-
610
-
A/ms
Tc = 25°C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD *6
trr *6
Reverse recovery time
Reverse recovery charge
Qrr *6
Peak reverse recovery current
Irrm *6
Peak rate of fall of reverse
recovery current
dirr/dt
VGS = 0V, IS = 8A
IS = 8A
di/dt = 100A/us
Tj = 25°C
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
0.263
Rth2
0.977
Rth3
2.18
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© 2012 ROHM Co., Ltd. All rights reserved.
Unit
K/W
4/13
Symbol
Value
Unit
Cth1
0.00166
Cth2
0.0191
Cth3
0.046
Ws/K
2012.10 - Rev.B
Data Sheet
R6008FNX
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
100
10
80
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
120
60
40
20
0
0
50
100
150
PW = 100us
1
PW = 1ms
0.1
Ta = 25ºC
Single Pulse
0.01
200
Operation in this
area is limited
by RDS(ON)
0.1
1
PW = 10ms
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Normalized Transient Thermal Resistance : r(t)
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.001
0.0001
0.0001
0.01
1
100
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
5/13
2012.10 - Rev.B
Data Sheet
R6008FNX
lElectrical characteristic curves
Fig.5 Avalanche Power Losses
Fig.4 Avalanche Current vs Inductive Load
6
5000
Ta = 25ºC
VDD = 50V , RG = 25W
VGF = 10V , VGR = 0V
4500
Avalanche Power Losses : PAR [W]
Avalanche Current : IAR [A]
5
4
3
2
1
0
0.01
0.1
1
10
100
Coil Inductance : L [mH]
Ta = 25ºC
4000
3500
3000
2500
2000
1500
1000
500
0
1.0E+04
1.0E+05
1.0E+06
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : EAS / EAS max. [%]
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
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© 2012 ROHM Co., Ltd. All rights reserved.
6/13
2012.10 - Rev.B
Data Sheet
R6008FNX
lElectrical characteristic curves
Fig.7 Typical Output Characteristics(I)
Fig.8 Typical Output Characteristics(II)
8
8
10V
6.0V
6
Drain Current : ID [A]
Ta= 25ºC
Pulsed
5.5V
4
5.0V
3
2
0
VGS= 4.5V
0
10
20
10V
8.0V
7.0V
6.5V
6.0V
6
5
1
Ta= 25ºC
Pulsed
7
Drain Current : ID [A]
7
30
40
5
4
3
5.0V
2
VGS= 4.5V
1
0
50
0
8
4
5
Ta = 150ºC
Pulsed
6.0V
4
Drain Current : ID [A]
6
Drain Current : ID [A]
3
5
5.5V
10V
5.0V
5
4
VGS = 4.5V
3
2
Ta = 150ºC
Pulsed
1
0
2
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
0
1
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
7
5.5V
10
20
30
40
VGS = 4.5V
1
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
5.0V
6.0V
2
0
50
10V
3
7/13
2012.10 - Rev.B
Data Sheet
R6008FNX
Fig.11 Breakdown Voltage
vs. Junction Temperature
Fig.12 Typical Transfer Characteristics
900
100
10
800
750
700
650
600
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
0.1
0.01
550
500
-50
0
50
100
Junction Temperature : Tj [°C]
0.001
150
3.0
4.5
6.0
100
VDS = 10V
ID = 1mA
Transconductance : gfs [S]
VDS = 10V
Pulsed
4
3
2
1
0
-50
1.5
Fig.14 Transconductance vs. Drain Current
6
5
0.0
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : VGS(th) [V]
VDS = 10V
Pulsed
850
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
lElectrical characteristic curves
0
50
100
1
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
0.1
0.01
0.01
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
10
0.1
1
10
100
Drain Current : ID [A]
8/13
2012.10 - Rev.B
Data Sheet
R6008FNX
lElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
3
Ta = 25ºC
Pulsed
1.5
ID= 8.0A
1
ID= 4.0A
0.5
0
0
5
10
15
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
2
Gate - Source Voltage : VGS [V]
2.5
VGS= 10V
Pulsed
2
ID= 8.0A
1.5
1
ID= 4.0A
0.5
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
10
VGS = 10V
Pulsed
1
0.1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
1
10
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
9/13
2012.10 - Rev.B
Data Sheet
R6008FNX
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Coss Stored Energy
10000
6
Ciss
Capacitance : C [pF]
1000
Crss
100
10
1
Coss Stored Energy : EOSS [uJ]
Ta = 25ºC
Coss
Ta = 25ºC
f = 1MHz
VGS = 0V
0.01
0.1
1
10
100
4
2
0
1000
0
Drain - Source Voltage : VDS [V]
600
Fig.21 Dynamic Input Characteristics
10000
15
tf
100
Gate - Source Voltage : VGS [V]
Ta = 25ºC
VDD = 300V
VGS = 10V
RG = 10W
Pulsed
1000
Switching Time : t [ns]
400
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
td(off)
10
td(on)
tr
1
200
0.1
1
10
Ta = 25ºC
VDD = 300V
ID = 8.0A
RG = 10W
Pulsed
5
0
100
0
10
20
30
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
10
10/13
2012.10 - Rev.B
Data Sheet
R6008FNX
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
100
1000
VGS = 0V
Pulsed
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
lElectrical characteristic curves
10
1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.01
0
0.5
1
1.5
100
10
2
Source - Drain Voltage : VSD [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
Ta = 25ºC
di / dt = 100A / ms
VGS = 0V
Pulsed
0.1
1
10
100
Inverse Diode Forward Current : IS [A]
11/13
2012.10 - Rev.B
Data Sheet
R6008FNX
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
12/13
2012.10 - Rev.B
Data Sheet
R6008FNX
lDimensions (Unit : mm)
D
TO-220FM
E
A
E1
A1
A
A2
A4
F
φp
b1
L
Q
c
e
b
DIM
A
A1
A2
A4
b
b1
c
D
E
e
E1
F
L
p
Q
x
x
A
MILIMETERS
MIN
MAX
16.60
17.60
1.80
2.20
14.80
15.40
6.80
7.20
0.70
0.85
1.10
1.50
0.70
0.85
9.90
10.30
4.40
4.80
2.54
2.70
3.00
2.80
3.20
11.50
12.50
3.00
3.40
2.10
3.10
0.381
INCHES
MIN
0.654
0.071
0.583
0.268
0.028
0.043
0.028
0.39
0.173
MAX
0.693
0.087
0.606
0.283
0.033
0.059
0.033
0.406
0.189
0.10
0.106
0.11
0.453
0.118
0.083
-
0.118
0.126
0.492
0.134
0.122
0.015
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
13/13
2012.10 - Rev.B
Notice
Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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R1120A