Datasheet Download

R6012FNX
Nch 600V 12A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on) (Max.)
0.51W
ID
12A
PD
50W
TO-220FM
(3)
(1) (2)
lFeatures
lInner circuit
1) Fast reverse recovery time (trr).
2) Low on-resistance.
(1) Gate
(2) Drain
(3) Source
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to be 30V.
*1 Body Diode
5) Drive circuits can be simple.
6) Parallel use is easy.
lPackaging specifications
7) Pb-free lead plating ; RoHS compliant
Packaging
lApplication
Type
Switching Power Supply
Bulk
Reel size (mm)
-
Tape width (mm)
-
Basic ordering unit (pcs)
Taping code
500
-
Marking
R6012FNX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
600
V
Tc = 25°C
ID *1
12
A
Tc = 100°C
ID *1
6
A
48
A
Drain - Source voltage
Continuous drain current
Pulsed drain current
ID,pulse
*2
Gate - Source voltage
VGSS
30
V
Avalanche energy, single pulse
EAS *3
9.6
mJ
Avalanche energy, repetitive
EAR *4
3.5
mJ
Avalanche current
IAR *3
6
A
Power dissipation (Tc = 25°C)
PD
50
W
Junction temperature
Tj
150
°C
Tstg
-55 to +150
°C
dv/dt *5
15
V/ns
Range of storage temperature
Reverse diode dv/dt
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© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.04 - Rev.B
Data Sheet
R6012FNX
lAbsolute maximum ratings
Parameter
Symbol
Drain - Source voltage slope
dv/dt
Conditions
VDS = 480V, ID = 12A
Tj = 125°C
Values
Unit
50
V/ns
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - case
RthJC
-
-
2.5
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
70
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Unit
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
600
-
-
V
Drain - Source avalanche
breakdown voltage
V(BR)DS
VGS = 0V, ID = 12A
-
700
-
V
Tj = 25°C
-
1
100
Tj = 125°C
-
-
10
mA
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
3
-
5
V
-
0.39
0.51
W
Tj = 125°C
-
0.75
-
f = 1MHz, open drain
-
8.0
-
VDS = 600V, VGS = 0V
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
mA
VGS = 10V, ID = 6A
Static drain - source
on - state resistance
Gate input resistance
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© 2013 ROHM Co., Ltd. All rights reserved.
RDS(on) *6 Tj = 25°C
RG
2/13
W
2013.04 - Rev.B
Data Sheet
R6012FNX
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
3.5
8
-
Transconductance
gfs *6
VDS = 10V, ID = 6.0A
Input capacitance
Ciss
VGS = 0V
-
1300
-
Output capacitance
Coss
VDS = 25V
-
890
-
Reverse transfer capacitance
Crss
f = 1MHz
-
45
-
Effective output capacitance,
energy related
Co(er)
-
56.7
-
Effective output capacitance,
time related
Turn - on delay time
Co(tr)
57.3
-
VDD ⋍ 300V, VGS = 10V
-
30
-
ID = 6A
-
37
-
td(off) *6
RL = 50W
-
77
154
tf *6
RG = 10W
-
20
40
td(on) *6
Turn - off delay time
Fall time
S
pF
pF
-
tr *6
Rise time
VGS = 0V
VDS = 0V to 480V
Unit
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Total gate charge
Qg *6
VDD ⋍ 300V
-
35
-
Gate - Source charge
Qgs *6
ID = 12A
-
10
-
Gate - Drain charge
Qgd *6
VGS = 10V
-
15
-
Gate plateau voltage
V(plateau)
VDD ⋍ 300V, ID = 12A
-
6.6
-
Unit
nC
V
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C
*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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© 2013 ROHM Co., Ltd. All rights reserved.
3/13
2013.04 - Rev.B
Data Sheet
R6012FNX
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Inverse diode continuous,
forward current
Values
Conditions
IS *1
Unit
Min.
Typ.
Max.
-
-
12
A
-
-
48
A
-
-
1.5
V
45
75
105
ns
-
0.26
-
mC
-
6.9
-
A
-
740
-
A/ms
Tc = 25°C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD *6
trr *6
Reverse recovery time
Reverse recovery charge
Qrr *6
Peak reverse recovery current
Irrm *6
Peak rate of fall of reverse
recovery current
dirr/dt
VGS = 0V, IS = 12A
IS = 12A
di/dt = 100A/us
Tj = 25°C
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
0.158
Rth2
0.75
Rth3
2.15
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Unit
K/W
4/13
Symbol
Value
Unit
Cth1
0.00247
Cth2
0.0317
Cth3
0.485
Ws/K
2013.04 - Rev.B
Data Sheet
R6012FNX
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
100
10
80
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
120
60
40
20
0
Operation in this
area is limited
by RDS(ON)
PW = 100ms
1
PW = 1ms
PW = 10ms
0.1
Ta = 25ºC
Single Pulse
0
50
100
150
0.01
200
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Normalized Transient Thermal Resistance : r(t)
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.001
0.0001
0.0001
0.01
1
100
Pulse Width : PW [s]
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5/13
2013.04 - Rev.B
Data Sheet
R6012FNX
lElectrical characteristic curves
Fig.5 Avalanche Power Losses
Fig.4 Avalanche Current vs Inductive Load
8
5000
Avalanche Current : IAR [A]
6
Avalanche Power Losses : PAR [W]
Ta = 25ºC
VDD = 50V , RG = 25W
VGF = 10V , VGR = 0V
7
5
4
3
2
1
0
0.01
0.1
1
10
100
Coil Inductance : L [mH]
4500
Ta = 25ºC
4000
3500
3000
2500
2000
1500
1000
500
0
1.0E+04
1.0E+05
1.0E+06
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : EAS / EAS max. [%]
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
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© 2013 ROHM Co., Ltd. All rights reserved.
6/13
2013.04 - Rev.B
Data Sheet
R6012FNX
lElectrical characteristic curves
Fig.8 Typical Output Characteristics(II)
Fig.7 Typical Output Characteristics(I)
12
VGS=8.0V
VGS=6.5V
VGS=7.0V
Ta=25ºC
Pulsed
VGS=10.0V
Drain Current : ID [A]
Drain Current : ID [A]
VGS=8.0V
8
3
Ta=25ºC
Pulsed
VGS=10.0V
VGS=6.0V
4
VGS=5.5V
VGS=7.0V
2
VGS=6.5V
VGS=5.5V
VGS=6.0V
1
VGS=5.0V
VGS=5.0V
0
0
10
20
30
40
0
50
0
Ta = 150ºC
Pulsed
Drain Current : ID [A]
Drain Current : ID [A]
8
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
0
10
20
30
40
VGS = 6.0V
3
2
VGS = 5.0V
1
0
50
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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© 2013 ROHM Co., Ltd. All rights reserved.
VGS = 10V
VGS = 4.5V
VGS = 4.5V
0
5
4
VGS = 6.5V
4
4
5
Ta = 150ºC
Pulsed
VGS = 8.0V
3
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
VGS = 10V
2
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
12
1
7/13
2013.04 - Rev.B
Data Sheet
R6012FNX
Fig.11 Breakdown Voltage
vs. Junction Temperature
Fig.12 Typical Transfer Characteristics
100
900
VDS=10V
pulsed
850
10
800
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
lElectrical characteristic curves
750
700
650
600
1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.01
550
500
-50
0
50
100
0.001
150
0.0
2.0
Junction Temperature : Tj [°C]
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
4
3
50
100
10
VDS=10V
pulsed
1
0.1
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
0.01
0.001
0.001
150
Junction Temperature : Tj [°C]
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10.0
100
VDS=10V
ID=1mA
pulsed
0
8.0
Fig.14 Transconductance vs. Drain Current
5
-50
6.0
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
2
4.0
0.01
0.1
1
10
100
Drain Current : ID [A]
8/13
2013.04 - Rev.B
Data Sheet
R6012FNX
lElectrical characteristic curves
1
Ta=25ºC
Pulsed
0.8
0.6
ID=12A
0.4
ID=6A
0.2
0
0
2
4
6
8
10 12 14 16 18 20
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Gate - Source Voltage : VGS [V]
1
VGS=10V
pulsed
0.8
0.6
ID=12A
ID=6A
0.4
0.2
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
VGS=10V
pulsed
0.1
0.01
0.1
1
10
100
Drain Current : ID [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
9/13
2013.04 - Rev.B
Data Sheet
R6012FNX
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
100000
10
Ta=25ºC
f=1MHz
VGS=0V
Ta = 25ºC
Ciss
1000
100
Coss
10
1
Coss Stored Energy : EOSS [uJ]
10000
Capacitance : C [pF]
Fig.19 Coss Stored Energy
Crss
0.01
0.1
1
10
100
8
6
4
2
0
1000
0
200
Drain - Source Voltage : VDS [V]
600
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
Fig.21 Dynamic Input Characteristics
10000
12
Switching Time : t [ns]
Gate - Source Voltage : VGS [V]
td(off)
100
td(on)
10
1
VDD≒300V
VGS=10V
RG=10W
Ta=25ºC
Pulsed
tf
1000
Switching Time : t [ns]
400
tr
0.01
0.1
1
10
Drain Current : ID [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
8
6
4
2
0
100
Ta=25ºC
VDD=300V
ID=12A
Pulsed
10
0
5
10 15 20 25 30 35 40 45 50
Total Gate Charge : Qg [nC]
10/13
2013.04 - Rev.B
Data Sheet
R6012FNX
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
100
1000
VGS=0V
pulsed
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
lElectrical characteristic curves
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
1
0.1
0.01
0.0
0.5
1.0
100
10
1.5
Source - Drain Voltage : VSD [V]
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© 2013 ROHM Co., Ltd. All rights reserved.
Ta=25ºC
Vgs=0V
di/dt=100A/ms
Pulsed
0
1
10
100
Inverse Diode Forward Current : IS [A]
11/13
2013.04 - Rev.B
Data Sheet
R6012FNX
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
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© 2013 ROHM Co., Ltd. All rights reserved.
12/13
2013.04 - Rev.B
Data Sheet
R6012FNX
lDimensions (Unit : mm)
D
TO-220FM
E
A
E1
A1
A
A2
A4
F
φp
b1
L
Q
c
e
b
DIM
A
A1
A2
A4
b
b1
c
D
E
e
E1
F
L
p
Q
x
x
A
MILIMETERS
MIN
MAX
16.60
17.60
1.80
2.20
14.80
15.40
6.80
7.20
0.70
0.85
1.10
1.50
0.70
0.85
9.90
10.30
4.40
4.80
2.54
2.70
3.00
2.80
3.20
11.50
12.50
3.00
3.40
2.10
3.10
0.38
INCHES
MIN
0.654
0.071
0.583
0.268
0.028
0.043
0.028
0.390
0.173
MAX
0.693
0.087
0.606
0.283
0.033
0.059
0.033
0.406
0.189
0.100
0.106
0.110
0.453
0.118
0.083
-
0.118
0.126
0.492
0.134
0.122
0.015
Dimension in mm / inches
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© 2013 ROHM Co., Ltd. All rights reserved.
13/13
2013.04 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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More detail product informations and catalogs are available, please contact us.
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R1102A
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