R6012FNX Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS(on) (Max.) 0.51W ID 12A PD 50W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. *1 Body Diode 5) Drive circuits can be simple. 6) Parallel use is easy. lPackaging specifications 7) Pb-free lead plating ; RoHS compliant Packaging lApplication Type Switching Power Supply Bulk Reel size (mm) - Tape width (mm) - Basic ordering unit (pcs) Taping code 500 - Marking R6012FNX lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 600 V Tc = 25°C ID *1 12 A Tc = 100°C ID *1 6 A 48 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 9.6 mJ Avalanche energy, repetitive EAR *4 3.5 mJ Avalanche current IAR *3 6 A Power dissipation (Tc = 25°C) PD 50 W Junction temperature Tj 150 °C Tstg -55 to +150 °C dv/dt *5 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/13 2013.04 - Rev.B Data Sheet R6012FNX lAbsolute maximum ratings Parameter Symbol Drain - Source voltage slope dv/dt Conditions VDS = 480V, ID = 12A Tj = 125°C Values Unit 50 V/ns lThermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 2.5 °C/W Thermal resistance, junction - ambient RthJA - - 70 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 12A - 700 - V Tj = 25°C - 1 100 Tj = 125°C - - 10 mA IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 3 - 5 V - 0.39 0.51 W Tj = 125°C - 0.75 - f = 1MHz, open drain - 8.0 - VDS = 600V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS mA VGS = 10V, ID = 6A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. RDS(on) *6 Tj = 25°C RG 2/13 W 2013.04 - Rev.B Data Sheet R6012FNX lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. 3.5 8 - Transconductance gfs *6 VDS = 10V, ID = 6.0A Input capacitance Ciss VGS = 0V - 1300 - Output capacitance Coss VDS = 25V - 890 - Reverse transfer capacitance Crss f = 1MHz - 45 - Effective output capacitance, energy related Co(er) - 56.7 - Effective output capacitance, time related Turn - on delay time Co(tr) 57.3 - VDD ⋍ 300V, VGS = 10V - 30 - ID = 6A - 37 - td(off) *6 RL = 50W - 77 154 tf *6 RG = 10W - 20 40 td(on) *6 Turn - off delay time Fall time S pF pF - tr *6 Rise time VGS = 0V VDS = 0V to 480V Unit ns lGate Charge characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Qg *6 VDD ⋍ 300V - 35 - Gate - Source charge Qgs *6 ID = 12A - 10 - Gate - Drain charge Qgd *6 VGS = 10V - 15 - Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 12A - 6.6 - Unit nC V *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C *4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/13 2013.04 - Rev.B Data Sheet R6012FNX lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Symbol Inverse diode continuous, forward current Values Conditions IS *1 Unit Min. Typ. Max. - - 12 A - - 48 A - - 1.5 V 45 75 105 ns - 0.26 - mC - 6.9 - A - 740 - A/ms Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *6 trr *6 Reverse recovery time Reverse recovery charge Qrr *6 Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt VGS = 0V, IS = 12A IS = 12A di/dt = 100A/us Tj = 25°C lTypical Transient Thermal Characteristics Symbol Value Rth1 0.158 Rth2 0.75 Rth3 2.15 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Unit Cth1 0.00247 Cth2 0.0317 Cth3 0.485 Ws/K 2013.04 - Rev.B Data Sheet R6012FNX lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 100 10 80 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 60 40 20 0 Operation in this area is limited by RDS(ON) PW = 100ms 1 PW = 1ms PW = 10ms 0.1 Ta = 25ºC Single Pulse 0 50 100 150 0.01 200 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 10 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 70ºC/W 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.001 0.0001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/13 2013.04 - Rev.B Data Sheet R6012FNX lElectrical characteristic curves Fig.5 Avalanche Power Losses Fig.4 Avalanche Current vs Inductive Load 8 5000 Avalanche Current : IAR [A] 6 Avalanche Power Losses : PAR [W] Ta = 25ºC VDD = 50V , RG = 25W VGF = 10V , VGR = 0V 7 5 4 3 2 1 0 0.01 0.1 1 10 100 Coil Inductance : L [mH] 4500 Ta = 25ºC 4000 3500 3000 2500 2000 1500 1000 500 0 1.0E+04 1.0E+05 1.0E+06 Frequency : f [Hz] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 6/13 2013.04 - Rev.B Data Sheet R6012FNX lElectrical characteristic curves Fig.8 Typical Output Characteristics(II) Fig.7 Typical Output Characteristics(I) 12 VGS=8.0V VGS=6.5V VGS=7.0V Ta=25ºC Pulsed VGS=10.0V Drain Current : ID [A] Drain Current : ID [A] VGS=8.0V 8 3 Ta=25ºC Pulsed VGS=10.0V VGS=6.0V 4 VGS=5.5V VGS=7.0V 2 VGS=6.5V VGS=5.5V VGS=6.0V 1 VGS=5.0V VGS=5.0V 0 0 10 20 30 40 0 50 0 Ta = 150ºC Pulsed Drain Current : ID [A] Drain Current : ID [A] 8 VGS = 6.0V VGS = 5.5V VGS = 5.0V 0 10 20 30 40 VGS = 6.0V 3 2 VGS = 5.0V 1 0 50 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. VGS = 10V VGS = 4.5V VGS = 4.5V 0 5 4 VGS = 6.5V 4 4 5 Ta = 150ºC Pulsed VGS = 8.0V 3 Fig.10 Tj = 150°C Typical Output Characteristics(II) Fig.9 Tj = 150°C Typical Output Characteristics(I) VGS = 10V 2 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] 12 1 7/13 2013.04 - Rev.B Data Sheet R6012FNX Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics 100 900 VDS=10V pulsed 850 10 800 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] lElectrical characteristic curves 750 700 650 600 1 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.01 550 500 -50 0 50 100 0.001 150 0.0 2.0 Junction Temperature : Tj [°C] Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 4 3 50 100 10 VDS=10V pulsed 1 0.1 Ta = -25ºC Ta = 25ºC Ta = 75ºC Ta = 125ºC 0.01 0.001 0.001 150 Junction Temperature : Tj [°C] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 10.0 100 VDS=10V ID=1mA pulsed 0 8.0 Fig.14 Transconductance vs. Drain Current 5 -50 6.0 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature 2 4.0 0.01 0.1 1 10 100 Drain Current : ID [A] 8/13 2013.04 - Rev.B Data Sheet R6012FNX lElectrical characteristic curves 1 Ta=25ºC Pulsed 0.8 0.6 ID=12A 0.4 ID=6A 0.2 0 0 2 4 6 8 10 12 14 16 18 20 Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Gate - Source Voltage : VGS [V] 1 VGS=10V pulsed 0.8 0.6 ID=12A ID=6A 0.4 0.2 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS=10V pulsed 0.1 0.01 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 9/13 2013.04 - Rev.B Data Sheet R6012FNX lElectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage 100000 10 Ta=25ºC f=1MHz VGS=0V Ta = 25ºC Ciss 1000 100 Coss 10 1 Coss Stored Energy : EOSS [uJ] 10000 Capacitance : C [pF] Fig.19 Coss Stored Energy Crss 0.01 0.1 1 10 100 8 6 4 2 0 1000 0 200 Drain - Source Voltage : VDS [V] 600 Drain - Source Voltage : VDS [V] Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics 10000 12 Switching Time : t [ns] Gate - Source Voltage : VGS [V] td(off) 100 td(on) 10 1 VDD≒300V VGS=10V RG=10W Ta=25ºC Pulsed tf 1000 Switching Time : t [ns] 400 tr 0.01 0.1 1 10 Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 8 6 4 2 0 100 Ta=25ºC VDD=300V ID=12A Pulsed 10 0 5 10 15 20 25 30 35 40 45 50 Total Gate Charge : Qg [nC] 10/13 2013.04 - Rev.B Data Sheet R6012FNX Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 100 1000 VGS=0V pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] lElectrical characteristic curves Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 10 1 0.1 0.01 0.0 0.5 1.0 100 10 1.5 Source - Drain Voltage : VSD [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Ta=25ºC Vgs=0V di/dt=100A/ms Pulsed 0 1 10 100 Inverse Diode Forward Current : IS [A] 11/13 2013.04 - Rev.B Data Sheet R6012FNX lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 12/13 2013.04 - Rev.B Data Sheet R6012FNX lDimensions (Unit : mm) D TO-220FM E A E1 A1 A A2 A4 F φp b1 L Q c e b DIM A A1 A2 A4 b b1 c D E e E1 F L p Q x x A MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.38 INCHES MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.390 0.173 MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189 0.100 0.106 0.110 0.453 0.118 0.083 - 0.118 0.126 0.492 0.134 0.122 0.015 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 13/13 2013.04 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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