E12609A31

Ultra-High Linearity SP4T Switch
CXM3599UR
Description
The CXM3599UR is a high power and ultra-high linearity SP4T switch for wireless communication systems.
The CXM3599UR can be used for SVLTE and carrier aggregation requiring very high linearity.
This IC has a 1.8 V CMOS compatible decoder.
The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and ultra-high linearity.
(Application: LTE/CDMA/GSM/UMTS Handsets and mini base-stations)
Features
◆
◆
◆
◆
◆
◆
Low Insertion loss: 0.27 dB (Typ.) (Cellular Band )
0.45 dB (Typ.) (IMT2000 )
Ultra-high linearity: IMD3 = -104 dBm (Max.), IIP3 = 82 dBm (Min.)
at LTE Band 13, PTx = +23 dBm, PBlocker = +14 dBm
Low voltage operation: VDD = 2.5 V
No DC blocking capacitors required on RF ports
Small package size: UQFN-20pin (2.5 mm × 2.5 mm)
Lead-Free and RoHS compliant
Structure
GaAs JPHEMT MMIC switch, CMOS decoder
Moisture Sensitivity
Moisture Sensitivity Level for this part is MSL = 2
Absolute Maximum Ratings
♦ Bias voltage
VDD
4
V
(Ta = 25 ˚C)
♦ Control voltage
Vctl
4
V
(Ta = 25 ˚C)
♦ Maximum input power
―
36
dBm
♦ Operating temperature
Topr
–35 to +90
˚C
♦ Storage temperature
Tstg
–65 to +150
˚C
(Duty cycle = 12.5 to 50 %, Ta = 25 ˚C)
This IC is ESD sensitive device. Special handling precautions are required.
1
Block Diagram
SP4T Antenna Switch
RF1 (High Linearity)
RF2 (Ultra-High Linearity)
ANT
RF3 (Ultra-High Linearity)
RF4 (Ultra-High Linearity)
MMIC
Switch
CTL A/B
CMOS Decoder
VDD
MMIC Switch
ANT
F1
F3
F2
F5
RF1
F4
F6
RF2
F7
RF3
F8
RF4
Truth Table
CTLA
CTLB
Active path
F1
F2
F3
F4
F5
F6
F7
F8
L
L
ANT-RF1
ON
OFF
OFF
OFF
OFF
ON
ON
ON
H
L
ANT-RF2
OFF
ON
OFF
OFF
ON
OFF
ON
ON
L
H
ANT-RF3
OFF
OFF
ON
OFF
ON
ON
OFF
ON
H
H
ANT-RF4
OFF
OFF
OFF
ON
ON
ON
ON
OFF
2
Pin Configuration
UQFN-20P PKG( 2.5m x 2.5mm )
GND
GND
ANT
GND
GND
15
14
13
12
11
(Top View)
VDD
16
10
RF1
GND
17
9
GND
CTLA
18
8
RF2
CTLB
19
7
GND
GND
20
6
GND
3
4
5
GND
RF3
2
GND
RF4
1
GND
GND
DC Bias Condition
Parameter
Min.
Typ.
Max.
VDD
2.5
2.7
3.3
Vctl (H)
1.35
1.8
3.3
Vctl (L)
0
—
0.45
Unit
V
3
Electrical Characteristics
(Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V)
Item
Symbol
Path
Min.
Typ.
Max.
*1, *2, *6, *8
―
0.32
0.42
*3, *7, *9
―
0.60
0.75
*4
―
0.65
0.80
*1, *2, *6, *8
―
0.27
0.37
*3, *4, *7, *9
―
0.45
0.60
*5
―
0.50
0.65
*1, *2, *6, *8
37
42
―
*7
33
35
―
*3,*4,*9
28
33
―
*1, *2, *6, *8
36
41
―
*3, *4, *7, *9
27
32
―
*5
25
30
―
*1, *2, *6, *8
33
38
―
*3, *4, *7, *9
25
30
―
*5
22
27
―
*1, *2, *6, *8
30
35
―
*3, *4, *7, *9
22
27
―
*5
20
25
―
ANT-RF1
704 to 2170 MHz
―
―
1.8
ANT-RF2,RF3,
RF4
704 to 2690 MHz
―
―
1.7
―
-55
-41
―
-53
-41
―
-63
-50
―
-62
-50
―
-73
-60
―
-80
-60
―
-60
-45
―
-64
-45
―
-67
-55
―
-68
-55
―
-80
-65
―
-86
-65
*1
―
-82
-78
*10, *11, *12, *15, *16, *19, *20, *23, *24
―
―
-105
*10, *13, *14, *17, *18, *21, *22, *25, *26
―
―
-105
ANT-RF1
Insertion loss
IL
ANT-RF2,RF3,
RF4
RF1-RF2,RF3,
RF4
(RF1 Active)
RF2-RF1,RF3,
RF4
(RF2 Active)
Isolation
ISO.
RF3-RF1,RF2,
RF4
(RF3 Active)
RF4-RF1,RF2,
RF3
(RF4 Active)
VSWR
VSWR
2fo
Condition
*6
3fo
2fo
3fo
ANT-RF1
2fo
*7
*2, *3
3fo
Harmonics
2fo
*6
3fo
2fo
3fo
ANT-RF2,RF3,
RF4
2fo
*7
*2,*3,*5
3fo
2fo
Inter modulation
distortion in Rx
Band
IMD2
ANT-RF1
IMD3
4
Unit
dB
dB
―
dBm
dBm
Item
Symbol
Path
IMD2
Inter modulation
distortion in Rx
Band
IMD3
ANT-RF2,RF3,
RF4
Condition
Min.
Typ.
Max.
*10, *11, *12, *15, *16, *19 ,*20, *23, *24
―
―
-110
*10, *13, *14, *17, *18, *21, *22, *25, *26
―
―
-110
*10, *27
―
―
-104
*10, *28
―
―
-110
*10, *29
―
―
-111
―
6
9
―
9
13
ANT-RF1
dBm
Switching speed
Ts
Wakeup time
Twu
―
VDD = 2.5 V to 90 % RF, Pin = 0 dBm
―
―
20
µs
Control current
Ictl
―
Vctl = 1.8 V
―
1
5
µA
Supply current
Idd
―
VDD = 2.7 V
―
0.14
0.35
mA
ANT-RF2,RF3,
RF4
50 % Ctl to 90 % RF
Unit
Electrical characteristics are measured with all RF ports terminated in 50 Ω.
*1
*2
*3
*4
*5
*6
*7
*8
*9
*10
Pin = 25 dBm, 704 to 787 MHz
(Band 13, Band 17)
Pin = 26 dBm, 824 to 960 MHz
(Band 5, Band 8)
Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx)
Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx)
Pin = 26 dBm, 2500 to 2690 MHz (Band 7)
Pin = 35 dBm, 824 to 915 MHz
(GSM850/900 Tx)
Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx)
Pin = 10 dBm, 869 to 960 MHz
(GSM850/900 Rx)
Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx)
Measured with the recommended circuit.
5
µs
IMD Condition (1)
Band
Band 1
Band 2
Band 5
Band 7
fRx on RF
[MHz]
2140
1960
880
2655
fTx
+20 dBm on RF
[MHz]
fBlocker
–15 dBm on ANT
[MHz]
1950
1880
835
2535
IMD condition
IMD2 (fRx – fTx)
190
*11
IMD2 (fRx + fTx)
4090
*12
IMD3 (2fTx – fRx)
1760
*13
IMD3 (2fTx + fRx)
6040
*14
IMD2 (fRx – fTx)
80
*15
IMD2 (fRx + fTx)
3840
*16
IMD3 (2fTx – fRx)
1800
*17
IMD3 (2fTx + fRx)
5720
*18
IMD2 (fRx – fTx)
45
*19
IMD2 (fRx + fTx)
1715
*20
IMD3 (2fTx – fRx)
790
*21
IMD3 (2fTx + fRx)
2550
*22
IMD2 (fRx – fTx)
120
*23
IMD2 (fRx + fTx)
5190
*24
IMD3 (2fTx – fRx)
2415
*25
IMD3 (2fTx + fRx)
7725
*26
IMD Condition (2)
fRx on RF
[MHz]
fTx
PTx = +23 dBm
on RF [MHz]
Band 13
747
786
IMD3 (2fTx – fRx)
825
*27
BC0
872
782
IMD3 (fTx + fRx)/2
827
*28
f1
+13 dBm on ANT
[MHz]
f2
+13 dBm on ANT
[MHz]
1912.5
1872.5
Band
fBlocker
PBlocker = +14 dBm on ANT
[MHz]
IMD condition
IMD Condition (3)
Band
Band 25
IMD3 Product
on RF [MHz]
IMD3 (2f1 – f2)
6
IMD condition
1952.5
*29
Triple Beat Ratio
(VDD = 2.5 V, Ta = 25 °C)
Condition
Item
Symbol
Path
ANT-RF1
Triple
beat
ratio
Input
power
at RF
[dBm]
Tx1 at
RF
[MHz]
Tx2 at
RF
[MHz]
Jammer
at ANT
–30 dBm
[MHz]
Triple beat
product
at RF
[MHz]
21.5
835.5
836.5
881.5
21.5
1880
1881
13.5
1732
21.5
Min.
Typ.
Max.
881.5 ± 1
81
―
―
1960
1960 ± 1
81
―
―
1733
2132
2132 ± 1
81
―
―
835.5
836.5
881.5
881.5 ± 1
88
―
―
21.5
1880
1881
1960
1960 ± 1
88
―
―
13.5
1732
1733
2132
2132 ± 1
88
―
―
TBR
ANT- RF2,
RF3,RF4
Unit
dBc
* Electrical characteristics are measured with all RF ports terminated in 50 Ω.
Measured with the recommended circuit.
IIP2
(VDD = 2.5 V, Ta = 25 °C)
Condition
Item
Input
IP2
Symbol
IIP2
Path
ANTRF1, RF2,
RF3,RF4
Tx
at RF
24 dBm
[MHz]
Jammer
at ANT
–20 dBm
[MHz]
IM2
product
at RF
[MHz]
836.61
1718.61
836.61
Min.
Typ.
Max.
881.61
113.5
―
―
45
881.61
95.5
―
―
1885
3850
1965
95.5
―
―
1885
80
1965
95.5
―
―
1732.5
3865
2132.5
95.5
―
―
1732.5
400
2132.5
95.5
―
―
* Electrical characteristics are measured with all RF ports terminated in 50 Ω.
Measured with the recommended circuit.
7
Unit
dBm
Recommended Circuit
UQFN-20P PKG( 2.5m x 2.5mm )
VDD
GND
11
12
ANT
GND
C1
13
GND
14
15
GND
L1
16
10
17
9
C2
RF3
GND
GND
*1
*2
*3
*4
5
6
4
20
3
7
1
GND
8
19
RF4
CTLB
GND
18
2
CTLA
GND
GND
No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias)
The DC levels of all RF ports are GND.
L1 (27 nH) and C1(12 pF) are recommended on Ant port for ESD protection.
C2(100 pF) is recommended on VDD pin for Decoupling Capacitor.
8
RF1
GND
RF2
GND
GND
Recommended Land Pattern
9
Package Outline
(Unit: mm)
Product Code:875342357
10
Package Outline
(Unit: mm)
Product Code:875342698
11
Marking
GP
12
Tape and Reel Size
CXM3599UR-T9
Product Code:875342357
13
Tape and Reel Size
CXM3599UR-T9
Product Code:875342698
14
Note
Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume
responsibility for any problems arising out of the use of these circuits.
15
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