Ultra-High Linearity SP4T Switch CXM3599UR Description The CXM3599UR is a high power and ultra-high linearity SP4T switch for wireless communication systems. The CXM3599UR can be used for SVLTE and carrier aggregation requiring very high linearity. This IC has a 1.8 V CMOS compatible decoder. The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and ultra-high linearity. (Application: LTE/CDMA/GSM/UMTS Handsets and mini base-stations) Features ◆ ◆ ◆ ◆ ◆ ◆ Low Insertion loss: 0.27 dB (Typ.) (Cellular Band ) 0.45 dB (Typ.) (IMT2000 ) Ultra-high linearity: IMD3 = -104 dBm (Max.), IIP3 = 82 dBm (Min.) at LTE Band 13, PTx = +23 dBm, PBlocker = +14 dBm Low voltage operation: VDD = 2.5 V No DC blocking capacitors required on RF ports Small package size: UQFN-20pin (2.5 mm × 2.5 mm) Lead-Free and RoHS compliant Structure GaAs JPHEMT MMIC switch, CMOS decoder Moisture Sensitivity Moisture Sensitivity Level for this part is MSL = 2 Absolute Maximum Ratings ♦ Bias voltage VDD 4 V (Ta = 25 ˚C) ♦ Control voltage Vctl 4 V (Ta = 25 ˚C) ♦ Maximum input power ― 36 dBm ♦ Operating temperature Topr –35 to +90 ˚C ♦ Storage temperature Tstg –65 to +150 ˚C (Duty cycle = 12.5 to 50 %, Ta = 25 ˚C) This IC is ESD sensitive device. Special handling precautions are required. 1 Block Diagram SP4T Antenna Switch RF1 (High Linearity) RF2 (Ultra-High Linearity) ANT RF3 (Ultra-High Linearity) RF4 (Ultra-High Linearity) MMIC Switch CTL A/B CMOS Decoder VDD MMIC Switch ANT F1 F3 F2 F5 RF1 F4 F6 RF2 F7 RF3 F8 RF4 Truth Table CTLA CTLB Active path F1 F2 F3 F4 F5 F6 F7 F8 L L ANT-RF1 ON OFF OFF OFF OFF ON ON ON H L ANT-RF2 OFF ON OFF OFF ON OFF ON ON L H ANT-RF3 OFF OFF ON OFF ON ON OFF ON H H ANT-RF4 OFF OFF OFF ON ON ON ON OFF 2 Pin Configuration UQFN-20P PKG( 2.5m x 2.5mm ) GND GND ANT GND GND 15 14 13 12 11 (Top View) VDD 16 10 RF1 GND 17 9 GND CTLA 18 8 RF2 CTLB 19 7 GND GND 20 6 GND 3 4 5 GND RF3 2 GND RF4 1 GND GND DC Bias Condition Parameter Min. Typ. Max. VDD 2.5 2.7 3.3 Vctl (H) 1.35 1.8 3.3 Vctl (L) 0 — 0.45 Unit V 3 Electrical Characteristics (Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V) Item Symbol Path Min. Typ. Max. *1, *2, *6, *8 ― 0.32 0.42 *3, *7, *9 ― 0.60 0.75 *4 ― 0.65 0.80 *1, *2, *6, *8 ― 0.27 0.37 *3, *4, *7, *9 ― 0.45 0.60 *5 ― 0.50 0.65 *1, *2, *6, *8 37 42 ― *7 33 35 ― *3,*4,*9 28 33 ― *1, *2, *6, *8 36 41 ― *3, *4, *7, *9 27 32 ― *5 25 30 ― *1, *2, *6, *8 33 38 ― *3, *4, *7, *9 25 30 ― *5 22 27 ― *1, *2, *6, *8 30 35 ― *3, *4, *7, *9 22 27 ― *5 20 25 ― ANT-RF1 704 to 2170 MHz ― ― 1.8 ANT-RF2,RF3, RF4 704 to 2690 MHz ― ― 1.7 ― -55 -41 ― -53 -41 ― -63 -50 ― -62 -50 ― -73 -60 ― -80 -60 ― -60 -45 ― -64 -45 ― -67 -55 ― -68 -55 ― -80 -65 ― -86 -65 *1 ― -82 -78 *10, *11, *12, *15, *16, *19, *20, *23, *24 ― ― -105 *10, *13, *14, *17, *18, *21, *22, *25, *26 ― ― -105 ANT-RF1 Insertion loss IL ANT-RF2,RF3, RF4 RF1-RF2,RF3, RF4 (RF1 Active) RF2-RF1,RF3, RF4 (RF2 Active) Isolation ISO. RF3-RF1,RF2, RF4 (RF3 Active) RF4-RF1,RF2, RF3 (RF4 Active) VSWR VSWR 2fo Condition *6 3fo 2fo 3fo ANT-RF1 2fo *7 *2, *3 3fo Harmonics 2fo *6 3fo 2fo 3fo ANT-RF2,RF3, RF4 2fo *7 *2,*3,*5 3fo 2fo Inter modulation distortion in Rx Band IMD2 ANT-RF1 IMD3 4 Unit dB dB ― dBm dBm Item Symbol Path IMD2 Inter modulation distortion in Rx Band IMD3 ANT-RF2,RF3, RF4 Condition Min. Typ. Max. *10, *11, *12, *15, *16, *19 ,*20, *23, *24 ― ― -110 *10, *13, *14, *17, *18, *21, *22, *25, *26 ― ― -110 *10, *27 ― ― -104 *10, *28 ― ― -110 *10, *29 ― ― -111 ― 6 9 ― 9 13 ANT-RF1 dBm Switching speed Ts Wakeup time Twu ― VDD = 2.5 V to 90 % RF, Pin = 0 dBm ― ― 20 µs Control current Ictl ― Vctl = 1.8 V ― 1 5 µA Supply current Idd ― VDD = 2.7 V ― 0.14 0.35 mA ANT-RF2,RF3, RF4 50 % Ctl to 90 % RF Unit Electrical characteristics are measured with all RF ports terminated in 50 Ω. *1 *2 *3 *4 *5 *6 *7 *8 *9 *10 Pin = 25 dBm, 704 to 787 MHz (Band 13, Band 17) Pin = 26 dBm, 824 to 960 MHz (Band 5, Band 8) Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx) Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx) Pin = 26 dBm, 2500 to 2690 MHz (Band 7) Pin = 35 dBm, 824 to 915 MHz (GSM850/900 Tx) Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx) Pin = 10 dBm, 869 to 960 MHz (GSM850/900 Rx) Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx) Measured with the recommended circuit. 5 µs IMD Condition (1) Band Band 1 Band 2 Band 5 Band 7 fRx on RF [MHz] 2140 1960 880 2655 fTx +20 dBm on RF [MHz] fBlocker –15 dBm on ANT [MHz] 1950 1880 835 2535 IMD condition IMD2 (fRx – fTx) 190 *11 IMD2 (fRx + fTx) 4090 *12 IMD3 (2fTx – fRx) 1760 *13 IMD3 (2fTx + fRx) 6040 *14 IMD2 (fRx – fTx) 80 *15 IMD2 (fRx + fTx) 3840 *16 IMD3 (2fTx – fRx) 1800 *17 IMD3 (2fTx + fRx) 5720 *18 IMD2 (fRx – fTx) 45 *19 IMD2 (fRx + fTx) 1715 *20 IMD3 (2fTx – fRx) 790 *21 IMD3 (2fTx + fRx) 2550 *22 IMD2 (fRx – fTx) 120 *23 IMD2 (fRx + fTx) 5190 *24 IMD3 (2fTx – fRx) 2415 *25 IMD3 (2fTx + fRx) 7725 *26 IMD Condition (2) fRx on RF [MHz] fTx PTx = +23 dBm on RF [MHz] Band 13 747 786 IMD3 (2fTx – fRx) 825 *27 BC0 872 782 IMD3 (fTx + fRx)/2 827 *28 f1 +13 dBm on ANT [MHz] f2 +13 dBm on ANT [MHz] 1912.5 1872.5 Band fBlocker PBlocker = +14 dBm on ANT [MHz] IMD condition IMD Condition (3) Band Band 25 IMD3 Product on RF [MHz] IMD3 (2f1 – f2) 6 IMD condition 1952.5 *29 Triple Beat Ratio (VDD = 2.5 V, Ta = 25 °C) Condition Item Symbol Path ANT-RF1 Triple beat ratio Input power at RF [dBm] Tx1 at RF [MHz] Tx2 at RF [MHz] Jammer at ANT –30 dBm [MHz] Triple beat product at RF [MHz] 21.5 835.5 836.5 881.5 21.5 1880 1881 13.5 1732 21.5 Min. Typ. Max. 881.5 ± 1 81 ― ― 1960 1960 ± 1 81 ― ― 1733 2132 2132 ± 1 81 ― ― 835.5 836.5 881.5 881.5 ± 1 88 ― ― 21.5 1880 1881 1960 1960 ± 1 88 ― ― 13.5 1732 1733 2132 2132 ± 1 88 ― ― TBR ANT- RF2, RF3,RF4 Unit dBc * Electrical characteristics are measured with all RF ports terminated in 50 Ω. Measured with the recommended circuit. IIP2 (VDD = 2.5 V, Ta = 25 °C) Condition Item Input IP2 Symbol IIP2 Path ANTRF1, RF2, RF3,RF4 Tx at RF 24 dBm [MHz] Jammer at ANT –20 dBm [MHz] IM2 product at RF [MHz] 836.61 1718.61 836.61 Min. Typ. Max. 881.61 113.5 ― ― 45 881.61 95.5 ― ― 1885 3850 1965 95.5 ― ― 1885 80 1965 95.5 ― ― 1732.5 3865 2132.5 95.5 ― ― 1732.5 400 2132.5 95.5 ― ― * Electrical characteristics are measured with all RF ports terminated in 50 Ω. Measured with the recommended circuit. 7 Unit dBm Recommended Circuit UQFN-20P PKG( 2.5m x 2.5mm ) VDD GND 11 12 ANT GND C1 13 GND 14 15 GND L1 16 10 17 9 C2 RF3 GND GND *1 *2 *3 *4 5 6 4 20 3 7 1 GND 8 19 RF4 CTLB GND 18 2 CTLA GND GND No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias) The DC levels of all RF ports are GND. L1 (27 nH) and C1(12 pF) are recommended on Ant port for ESD protection. C2(100 pF) is recommended on VDD pin for Decoupling Capacitor. 8 RF1 GND RF2 GND GND Recommended Land Pattern 9 Package Outline (Unit: mm) Product Code：875342357 10 Package Outline (Unit: mm) Product Code：875342698 11 Marking GP 12 Tape and Reel Size CXM3599UR-T9 Product Code：875342357 13 Tape and Reel Size CXM3599UR-T9 Product Code：875342698 14 Note Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. 15