E13419A64

High Isolation DPDT Switch
CXM3648UR
Description
The CXM3648UR is a high power and high isolation DPDT switch for wireless communication systems.
This IC has a 1.8 V CMOS compatible decoder.
The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and high linearity.
(Application: LTE/CDMA/GSM/UMTS Handsets )
Features
◆ Low Insertion loss: 0.30 dB (Typ.) (Cellular Band )
0.41 dB (Typ.) (IMT2000 )
◆ High Isolation: 32dB (Typ.) @Band7
◆ Low voltage operation: VDD = 2.5 V
◆ No DC blocking capacitors are required on RF ports as long as no DC voltage is applied
◆ 1 Control input
◆ Small package size: UQFN-12 pin (2.0 mm × 2.0 mm)
◆ Lead-Free and RoHS compliant
Structure
GaAs JPHEMT MMIC switch, CMOS decoder
Ordering Information
Model Name
Manufacturing Part Number
Evaluation Part number
CXM3648UR
CXM3648UR-T9
IC:
CXM3648UR
Board: CXM3648UR-EVB
Moisture Sensitivity
Moisture Sensitivity Level for this part is MSL= 2
This IC is ESD sensitive device. Special handling precautions are required.
1
CXM3648UR
Block Diagram
DPDT Antenna Switch
RF3
RF1
RF2
Decoder
Logic
RF4
VDD
CTL
MMIC Switch
F4
F4
RF1
RF3
F1
F3
F8
F5
F7
F1
F3
RF4
RF2
F2
F2
F6
Truth Table
CTL
Active path
F1,F3
F2,F4
F5,F7
F6,F8
L
RF1-RF4
RF2-RF3
ON
OFF
OFF
ON
H
RF1-RF3
RF2-RF4
OFF
ON
ON
OFF
2
CXM3648UR
Pin Configuration
UQFN-12P PKG (2.0mm x 2.0mm)
1
GND
2
CTL
3
RF3
GND
12
11
10
GND
5
RF2
GND
4
9
RF4
8
GND
7
RF1
6
GND
VDD
GND
(Top View)
Absolute Maximum Ratings
♦ Bias voltage
VDD
4
V
(Ta = 25 ˚C)
♦ Control voltage
Vctl
4
V
(Ta = 25 ˚C)
36
dBm
♦ Maximum input power
♦ Operating temperature
Topr
–35 to +90
˚C
♦ Storage temperature
Tstg
–65 to +150
˚C
(Duty cycle = 12.5 to 50 %, Ta = 25 ˚C)
DC Bias Condition
Parameter
Min.
Typ.
Max.
VDD
2.5
2.7
3.3
Vctl (H)
1.35
1.8
3.3
Vctl (L)
0
—
0.45
Unit
V
3
CXM3648UR
Target Electrical Characteristics
(Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V)
Item
Symbol
Path
RF1-RF4
RF2-RF3
Insertion Loss
IL
RF1-RF3
RF2-RF4
RF1-RF4
RF2-RF3
Isolation
ISO
RF1-RF3
RF2-RF4
VSWR
VSWR
All ports in
active paths
2fo
Condition
Min.
Typ.
Max.
*1, *2, *6, *8
―
0.32
0.42
*3, *4, *7, *9
―
0.43
0.53
*5
―
0.48
0.63
*1, *2, *6, *8
―
0.30
0.40
*3, *4, *7, *9
―
0.41
0.51
*5
―
0.45
0.60
*1, *2, *6, *8
35
40
―
*3, *4, *7, *9
32
35
―
*5
28
31.5
―
*1, *2, *6, *8
35
50
―
*3, *4, *7, *9
32
36.5
―
*5
28
32
―
700 to 2700 MHz
―
―
1.5
―
-50
–41
―
-44
–41
―
-49
–41
―
-48
–41
―
―
–50
―
―
–50
*10, *11, *12, *15, *16, *19, *20, *23, *24
―
―
–105
*10, *13, *14, *17, *18, *21, *22, *25, *26
―
―
–105
7
10
µs
20
µs
*6
3fo
Harmonics
2fo
3fo
RF1-RF4, RF3
RF2-RF3, RF4
*7
2fo
*2, *3, *5
3fo
Unit
dB
dB
―
dBm
Inter modulation
distortion in Rx
Band
IMD2
Switching speed
Ts
50 % Ctl to 90 % RF
―
Wakeup time
Twu
VDD = 2.5 V to 90 % RF, Pin = 0 dBm
―
Control current
Ictl
Vctl = 1.8 V
―
1
5
µA
Supply current
Idd
VDD = 2.7 V
―
0.15
0.35
mA
IMD3
RF1-RF4, RF3
RF2-RF3, RF4
Electrical characteristics are measured with all RF ports terminated in 50 Ω.
*1
*2
*3
*4
*5
*6
*7
*8
*9
*10
Pin = 25 dBm, 704 to 787 MHz
(Band 13, Band 17)
Pin = 26 dBm, 824 to 960 MHz
(Band 5, Band 8)
Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx)
Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx)
Pin = 26 dBm, 2500 to 2690 MHz (Band 7)
Pin = 35 dBm, 824 to 915 MHz
(GSM850/900 Tx)
Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx)
Pin = 10 dBm, 869 to 960 MHz
(GSM850/900 Rx)
Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx)
Measured with the recommended circuit.
4
dBm
CXM3648UR
IMD Condition
Band
Band 1
Band 2
Band 5
Band 7
fRx
on RF
[MHz]
2140
1960
880
2655
fTx
+20 dBm
on RF3/RF4
[MHz]
fBlocker
–15 dBm
on RF1/RF2
[MHz]
1950
1880
835
2535
5
IMD condition
IMD2 (fRx – fTx)
190
*11
IMD2 (fRx + fTx)
4090
*12
IMD3 (2fTx – fRx)
1760
*13
IMD3 (2fTx + fRx)
6040
*14
IMD2 (fRx – fTx)
80
*15
IMD2 (fRx + fTx)
3840
*16
IMD3 (2fTx – fRx)
1800
*17
IMD3 (2fTx + fRx)
5720
*18
IMD2 (fRx – fTx)
45
*19
IMD2 (fRx + fTx)
1715
*20
IMD3 (2fTx – fRx)
790
*21
IMD3 (2fTx + fRx)
2550
*22
IMD2 (fRx – fTx)
120
*23
IMD2 (fRx + fTx)
5190
*24
IMD3 (2fTx – fRx)
2415
*25
IMD3 (2fTx + fRx)
7725
*26
CXM3648UR
Triple Beat Ratio
(VDD = 2.5 V, Ta = 25 °C)
Condition
Item
Triple
beat
ratio
Symbol
TBR
Path
RF1-RF4,
RF3
RF2-RF3,
RF4
Input
power
at RF3/
RF4
[dBm]
Tx1 at
RF3/
RF4
[MHz]
Tx2 at
RF3/
RF4
[MHz]
Jammer
at
RF1/RF2
–30 dBm
[MHz]
Triple beat
product
at RF
[MHz]
21.5
835.5
836.5
881.5
21.5
1880
1881
13.5
1732
1733
Min.
Typ.
Max.
881.5 ± 1
81
―
―
1960
1960 ± 1
81
―
―
2132
2132 ± 1
81
―
―
Unit
dBc
* Electrical characteristics are measured with all RF ports terminated in 50 Ω.
Measured with the recommended circuit.
IIP2
(VDD = 2.5 V, Ta = 25 °C)
Condition
Item
Input
IP2
Symbol
IIP2
Path
RF1-RF4,
RF3
RF2-RF3,
RF4
Tx at
RF3/RF4
24 dBm
[MHz]
Jammer at
RF1/RF2
–20 dBm
[MHz]
IM2 product at
RF
[MHz]
Min.
Typ.
Max.
836.61
1718.22
881.61
113.5
―
―
836.61
45
881.61
95.5
―
―
1885
3850
1965
95.5
―
―
1885
80
1965
95.5
―
―
1732.5
3865
2132.5
95.5
―
―
1732.5
400
2132.5
95.5
―
―
* Electrical characteristics are measured with all RF ports terminated in 50 Ω.
Measured with the recommended circuit.
6
Unit
dBm
CXM3648UR
Recommended Circuit
(Top View)
RF3
11
12
VDD
10
1
9
2
8
RF4
C2
C1
CTL
3
RF1 (ANT)
7
L1
5
4
6
L1
C1
RF2 (ANT)
*1 No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias)
*2 The DC levels of all RF ports are GND.
*3 L1 (27nH) and C1(12pF) are recommended on Ant port for ESD protection.
*4 C2(100pF) is recommended on VDD pin for Decoupling Capacitor.
7
CXM3648UR
Recommended Land Pattern
8
CXM3648UR
Recommended PCB Design
●GND Via Hole
PKG Line
9
CXM3648UR
Package Outline
(Unit: mm)
10
CXM3648UR
Marking
11
CXM3648UR
Tape and Reel Size
CXM3648UR-T9
12
CXM3648UR
Note
The product specifications, circuit examples, technical information and any and all other information and content relating
to the Products contained in this specification may be revised or updated by Sony at Sony’s sole discretion without prior
notice to the Customer and Customer shall abide by their latest versions. Such revisions or updates will be made
available to Customer in a way as Sony deems appropriate.
Ensure that you have read and reviewed the notices contained in our delivery specification as well as this specification when
purchasing and using the Products.
13
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