E13708

CXM3593UR
High Power DPDT Switch
CXM3593UR
Description
The CXM3593UR is a high power DPDT switch for wireless communication systems.
This IC has a 1.8 V CMOS compatible decoder.
The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and high linearity.
(Application: LTE/CDMA/GSM/UMTS Handsets )
Features
◆ Low Insertion loss: 0.26dB (Typ.) (Cellular Band )
0.45 dB (Typ.) (IMT2000 )
◆ Low voltage operation: VDD = 2.5 V
◆ No DC blocking capacitors required on RF ports
◆ 2 Control input
◆ Small package size: UQFN-12 pin (2.0 mm × 2.0 mm)
◆ Lead-Free and RoHS compliant
Structure
GaAs JPHEMT MMIC switch, CMOS decoder
Moisture Sensitivity
Moisture Sensitivity Level for this part is MSL= 2 (Tentative)
Absolute Maximum Ratings
♦ Bias voltage
VDD
4
V
(Ta = 25 ˚C)
♦ Control voltage
Vctl
4
V
(Ta = 25 ˚C)
36
dBm
♦ Operating temperature
Topr
–35 to +90
˚C
♦ Storage temperature
Tstg
–65 to +150
˚C
♦ Maximum input power
(Duty cycle = 12.5 to 50 %, Ta = 25 ˚C)
This IC is ESD sensitive device. Special handling precautions are required.
1
CXM3593UR
Block Diagram
DPDT Antenna Switch
RF3
RF1
RF2
Decoder
Logic
RF4
VDD
CTL 1/2
MMIC Switch
F4
RF1
RF3
F1
F3
RF4
RF2
F2
Truth Table
CTL 1
CTL 2
Active path
F1,F3
F2,F4
L
H
RF1-RF4
RF2-RF3
ON
OFF
H
L
RF1-RF3
RF2-RF4
OFF
ON
2
CXM3593UR
Pin Configuration
CTL2
2
CTL1
3
RF3
GND
11
10
UQFN-12P PKG
2.0m x 2.0mm
GND
4
5
6
GND
1
12
RF2
VDD
GND
(Top View)
DC Bias Condition
Parameter
Min.
Typ.
Max.
VDD
2.5
2.85
3.3
Vctl (H)
1.35
1.8
3.3
Vctl (L)
0
—
0.45
Unit
V
3
9
RF4
8
GND
7
RF1
CXM3593UR
Target Electrical Characteristics
(Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V)
Item
Symbol
Path
RF1-RF4
RF2-RF3
Insertion Loss
IL
RF1-RF3
RF2-RF4
RF1-RF4
RF2-RF3
Isolation
ISO
RF1-RF3
RF2-RF4
Condition
Min.
Typ.
Max.
*1, *2, *6, *8
―
0.26
0.36
*3, *4, *7, *9
―
0.45
0.55
*5
―
0.55
0.70
*1, *2, *6, *8
―
0.26
0.36
*3, *4, *7, *9
―
0.45
0.55
*5
―
0.55
0.70
*1, *2, *6, *8
22
25
―
*3, *4, *7, *9
16
18
―
*5
14
16
―
*1, *2, *6, *8
22
26
―
*3, *4, *7, *9
16
19
―
*5
15
17
―
1.5
Unit
dB
dB
VSWR
VSWR
All ports in
active paths
700 to 2700 MHz
―
―
P0.1dB
Compression
Point
P0.1
RF1-RF4, RF3
RF2-RF3, RF4
800 to 2200 MHz
35
38
―
-50
–41
―
-49
–41
―
-60
–45
―
-56
–45
―
-70
–50
―
-68
–50
*10, *11, *12, *15, *16, *19, *20, *23, *24
―
―
–108
*10, *13, *14, *17, *18, *21, *22, *25, *26
―
―
–108
3
5
µs
20
µs
2fo
*6
3fo
Harmonics
2fo
3fo
RF1-RF4, RF3
RF2-RF3, RF4
2fo
*7
*2, *3, *5
3fo
―
dBm
dBm
Inter modulation
distortion in Rx
Band
IMD2
Switching speed
Ts
50 % Ctl to 90 % RF
―
Wakeup time
Twu
VDD = 2.5 V to 90 % RF, Pin = 0 dBm
―
Control current
Ictl
Vctl = 1.8 V
―
1
5
µA
Supply current
Idd
VDD = 2.85 V
―
0.15
0.25
mA
IMD3
RF1-RF4, RF3
RF2-RF3, RF4
Electrical characteristics are measured with all RF ports terminated in 50 Ω.
*1
*2
*3
*4
*5
*6
*7
*8
*9
*10
Pin = 25 dBm, 704 to 787 MHz
(Band 13, Band 17)
Pin = 26 dBm, 824 to 960 MHz
(Band 5, Band 8)
Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx)
Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx)
Pin = 26 dBm, 2500 to 2690 MHz (Band 7)
Pin = 35 dBm, 824 to 915 MHz
(GSM850/900 Tx)
Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx)
Pin = 10 dBm, 869 to 960 MHz
(GSM850/900 Rx)
Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx)
Measured with the recommended circuit.
4
dBm
CXM3593UR
IMD Condition
Band
Band 1
Band 2
Band 5
Band 7
fRx on RF
[MHz]
2140
1960
880
2655
fTx
+20 dBm on RF
[MHz]
fBlocker
–15 dBm on ANT
[MHz]
1950
1880
835
2535
5
IMD condition
IMD2 (fRx – fTx)
190
*11
IMD2 (fRx + fTx)
4090
*12
IMD3 (2fTx – fRx)
1760
*13
IMD3 (2fTx + fRx)
6040
*14
IMD2 (fRx – fTx)
80
*15
IMD2 (fRx + fTx)
3840
*16
IMD3 (2fTx – fRx)
1800
*17
IMD3 (2fTx + fRx)
5720
*18
IMD2 (fRx – fTx)
45
*19
IMD2 (fRx + fTx)
1715
*20
IMD3 (2fTx – fRx)
790
*21
IMD3 (2fTx + fRx)
2550
*22
IMD2 (fRx – fTx)
120
*23
IMD2 (fRx + fTx)
5190
*24
IMD3 (2fTx – fRx)
2415
*25
IMD3 (2fTx + fRx)
7725
*26
CXM3593UR
Recommended Circuit
RF3
11
12
VDD
10
1
9
CTL2
2
8
CTL1
3
7
RF4
C2
C1
RF1
L1
5
4
6
L1
C1
RF2
*1 No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias)
*2 The DC levels of all RF ports are GND.
*3 L1 (27nH) and C1(12pF) are recommended on Ant port for ESD protection.
*4 C2(100pF) is recommended on VDD pin for Decoupling Capacitor.
6
CXM3593UR
Recommended Land Pattern
7
CXM3593UR
Package Outline
(Unit: mm)
8
CXM3593UR
Marking
9
CXM3593UR
Tape and Reel Size
CXM3593UR-T9
10
CXM3593UR
Note
Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume
responsibility for any problems arising out of the use of these circuits.
11
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