1011GN-250E-EL-EP

1011GN-250E/EL/EP Datasheet
250W Interrogator/Transponder GaN Power
Transistor and Amplifier
250W Interrogator/Transponder GaN Power Transistor and Amplifier
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its
products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or
use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited
testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are
believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products,
alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or
parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test
and verify the same. The information provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire
risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such
information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any
changes to the information in this document or to any products and services at any time without notice.
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo,
CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
E-mail: [email protected]
www.microsemi.com
About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications,
defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal
integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time
solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and
communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and
midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately
4,800 employees globally. Learn more at www.microsemi.com.
©2016 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi
Corporation. All other trademarks and service marks are the property of their respective owners.
2
250W Interrogator/Transponder GaN Power Transistor and Amplifier
Revision History
1.1
Revision 1.0
Revision 1.0 was the first publication of this document.
3
250W Interrogator/Transponder GaN Power Transistor and Amplifier
Contents
Revision History.............................................................................................................................. 3
1.1
Revision 1.0 ................................................................................................................................................ 3
2 Product Overview .................................................................................................................... 7
2.1
Applications ............................................................................................................................................... 7
2.1.1
Key Features ................................................................................................................................ 8
3 Electrical Specifications ............................................................................................................ 9
3.1
Absolute Maximum Ratings ....................................................................................................................... 9
3.2
Electrical Characteristics at 25 °C ............................................................................................................... 9
3.3
Functional Characteristics at 25 °C ............................................................................................................ 9
3.4
Typical Broadband Performance Data (32 µS, 2% Pulsing) ...................................................................... 10
3.5
Critical Performance at PIN = 2.5 W (34 dBm) .......................................................................................... 10
4 Transistor Impedance Information......................................................................................... 11
5 Transistor Test Information .................................................................................................... 12
5.1
Transistor Test Circuit Diagram ................................................................................................................ 12
6 Product Outline and Terminal Information ............................................................................ 14
6.1
55-QQ Common Source Package Dimensions and Terminal Information ................................................ 14
6.2
55-QQP Common Source Package Dimensions and Terminal Information.............................................. 15
6.3
Overall Pallet Dimensions ........................................................................................................................ 16
4
250W Interrogator/Transponder GaN Power Transistor and Amplifier
List of Figures
Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550")................................................................................ 7
Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230").............................................................................. 7
Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150") ................................................................................. 7
Figure 4 Typical Broadband Performance Data Graphs ............................................................................................. 10
Figure 5 Impedance Definition................................................................................................................................... 11
Figure 6 Transistor Test Circuit .................................................................................................................................. 12
Figure 7 55-QQ Package Dimensions and Terminal Information ............................................................................... 14
Figure 8 55-QQP Package Dimensions and Terminal Information ............................................................................. 15
Figure 9 Pallet Package Dimensions .......................................................................................................................... 16
5
250W Interrogator/Transponder GaN Power Transistor and Amplifier
List of Tables
Table 1 Absolute Maximum Ratings ............................................................................................................................ 9
Table 2 Typical Electrical Characteristics at 25 °C ........................................................................................................ 9
Table 3 Typical Functional Characteristics at 25 °C...................................................................................................... 9
Table 4 Typical Broadband Performance Data (32 µS, 2% Pulsing) ........................................................................... 10
Table 5 Critical Performance at PIN = 2.5 W (34 dBm) ............................................................................................... 10
Table 6 Component List 1011GN-250E/EL ................................................................................................................. 12
Table 7 55-QQ Package Dimensions .......................................................................................................................... 14
Table 8 55-QQP Package Dimensions ........................................................................................................................ 15
6
250W Interrogator/Transponder GaN Power Transistor and Amplifier
2
Product Overview
The 1011GN-250E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT
transistor/pallet amplifier capable of providing over 20.5 dB typical gain, 250 W of pulsed RF output
power under several pulse formats including mode-S ELM across the 1030 to 1090 MHz band. The
transistor has internal pre-match for optimal performance and is hermetically sealed. Available in
two package types, both the bolt-down flange 55-QQ package and the solder-down earless flange
55-QQP package, as well as mounted in a 50 Ω IN/OUT pallet, the transistor is designed specifically
for IFF, Mode-S, TCAS, and avionics secondary radar applications, and it utilizes gold metallization
and eutectic die attach to provide the highest reliability and superior ruggedness. Export
Classification: EAR-99.
Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550")
Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230")
Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150")
2.1
Applications
The 1011GN-250E and 1011GN-250EL transistors and the 1011GN-250EP pallet are specifically
designed for IFF, Mode-S, TCAS, and avionics secondary radar applications.
7
250W Interrogator/Transponder GaN Power Transistor and Amplifier
2.1.1
Key Features
The following are the key features of the 1011GN-250E/EL E-Class Earless/Eared GaN transistor:
•
1030–1090 MHz, 250 W pulsed output power, 32 µS 2% pulsing
•
Common source , Class AB, 50 VDD bias voltage
•
High efficiency: >70% typical across the frequency band
•
Extremely compact size
•
High power gain: 20.5 dB typical
•
Excellent gain flatness: 0.1 dB typical
•
Ideal for IFF, Mode-S, TCAS, and avionics secondary radar applications
•
Utilizes all-gold metallization and eutectic die attach for highest reliability
•
50 Ω IN/OUT lumped element, very small footprint, plug-and-play pallets available
8
250W Interrogator/Transponder GaN Power Transistor and Amplifier
3
Electrical Specifications
3.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings at 25 °C unless otherwise specified.
Table 1 Absolute Maximum Ratings
Rating
Units
Maximum power dissipation
Device dissipation at 25 °C
460
W
Maximum voltage and current
Drain-Source voltage (VDSS)
125
V
Gate-Source voltage (VGS)
–8 to 0
V
Storage temperature (TSTG)
–55 to 125
°C
Operating junction temperature
200
°C
Maximum temperatures
3.2
Value
Electrical Characteristics at 25 °C
The following table shows the typical electrical characteristics at 25 °C.
Table 2 Typical Electrical Characteristics at 25 °C
Symbol
Characteristics
Test Conditions
Min
Typ
Max
POUT
Output power
PIN = 2.5 W, Freq = 1030, 1090 MHz
250
280
W
GP
Power gain
PIN = 2.5 W, Freq = 1030, 1090 MHz
20
20.5
dB
ȠD
Drain efficiency
PIN = 2.5 W, Freq = 1030, 1090 MHz
60
75
%
Dr
Droop
PIN = 2.5 W, Freq = 1030, 1090 MHz
VSWR-T
Load mismatch
tolerance
POUT = 250 W, Freq = 1030 MHz, 32 µS2%
5:1
ӨJC
Thermal
resistance
32 µS, 2% duty cycle
0.68
0.14
0.5
Units
dB
°C/W
Bias Condition: VDD = +50 V, IDQ = 60 mA constant current (VGS = –2.0 to –4.5 V typical)
3.3
Functional Characteristics at 25 °C
Table 3 Typical Functional Characteristics at 25 °C
Symbol
Characteristic
Test Conditions
ID(Off)
Drain leakage current
IG(Off)
Gate leakage current
Min
Typ
Max
Units
VGS = –8 V, VD = 125 V
24
mA
VGS = –8 V, VD = 0 V
8
mA
9
250W Interrogator/Transponder GaN Power Transistor and Amplifier
3.4
Typical Broadband Performance Data (32 µS, 2% Pulsing)
Table 4 Typical Broadband Performance Data (32 µS, 2% Pulsing)
Frequency
PIN (W)
POUT (W)
ID (mA)
IRL (dB)
ȠD (%)
GP (dB)
Droop (dB)
1030 MHz
2.5
284
0.20
–8.0
72
20.5
0.12
1090 MHz
2.5
283
0.18
–12.0
78
20.5
0.12
Figure 4 Typical Broadband Performance Data Graphs
3.5
Critical Performance at PIN = 2.5 W (34 dBm)
Table 5 Critical Performance at PIN = 2.5 W (34 dBm)
Freq (GHz)
Test Condition
PO (W)
Gain (dB)
Eff (%)
Droop (dB)
1.030
32 µS – 2%
283
20.5
72
0.12
1.030
128 µS – 10%
269
20.3
62
0.30
1.090
32 µS – 2%
284
20.5
78
0.12
1.090
128 µS – 10%
275
20.7
71
0.30
10
250W Interrogator/Transponder GaN Power Transistor and Amplifier
4
Transistor Impedance Information
The following diagram shows the transistor impedance information for 1011GN-250E/EL/EP.
Figure 5 Impedance Definition
Output Matching
Network
D
Input Matching
Network
G
S
ZLOAD
50 Ω
ZSOURCE
50 Ω
Note:
ZSOURCE is looking into the input circuit
ZLOAD is looking into the output circuit
For information about source and load impedances for 1011GN-250E/EL/EP, contact your Microsemi
representative.
11
250W Interrogator/Transponder GaN Power Transistor and Amplifier
5
Transistor Test Information
5.1
Transistor Test Circuit Diagram
Figure 6 Transistor Test Circuit
The board material is Rogers Duroid 6006, 0.250" thickness, and εr = 6.15.
The following table lists the components for 1011GN-250E/EL.
Table 6 Component List 1011GN-250E/EL
Item
Description
Value
C1
Chip capacitor A size – ATC 600S series
68 pF
C2
Chip capacitor A size – ATC 600S series
68 pF
C3
Chip capacitor A size – ATC 600S series
9.1 pF
C4
Chip capacitor A size
470 pF
C5
Chip capacitor B size
4.7 uF
C6
Chip capacitor A size – ATC 600S series
5.6 pF
C7
Chip capacitor A size
2 to 2.5 pF
C8
Chip capacitor A size – ATC 600S series
1.2 pF
C9
Electrolytic capacitor (63 V)
470 uF
C10
Chip capacitor A size – ATC 600S series
6.8 pF
C11
Chip capacitor A size – ATC 600S series
1.2 pF
12
250W Interrogator/Transponder GaN Power Transistor and Amplifier
Item
Description
Value
R1
Chip resistor size 0805
40.2 Ω
R2
Chip resistor size 0805
5.1 Ω
L1
Chip inductor size 0805
47 nH
L2
24 AWG Cu wire, Diameter = 0.07"
1 Turn
L3
24 AWG Cu wire, Length = 0.280"
U Shape
13
250W Interrogator/Transponder GaN Power Transistor and Amplifier
6
Product Outline and Terminal Information
The 1011GN-250E transistor is available in the 55-QQP case outline and the 1011GN-250EL
transistor is available in the 55-QQP case outline. The 1011GN-250EP is available in the 90-1011GN250EP pallet outline. All three products are configured for common source operation.
6.1
55-QQ Common Source Package Dimensions and Terminal Information
Figure 7 55-QQ Package Dimensions and Terminal Information
Pin 1: Drain, Pin 2: Source, Pin 3: Gate
Table 7 55-QQ Package Dimensions
Dim
Millimeters
Tol
Inches
Tol
A
13.970
0.250
0.550
0.010
B
4.570
0.250
0.160
0.010
C
3.860
0.330
0.152
0.013
D
1.270
0.130
0.050
0.005
E
1.020
0.130
0.040
0.005
F
1.700
0.130
0.067
0.005
G
0.130
0.025
0.005
0.001
H
8.130
0.250
0.320
0.010
I
45°
5°
45°
5°
J
5.080
0.250
0.200
0.010
K
2.54 DIA
0.130
0.100 DIA
0.005
L
1.270
0.130
0.050
0.005
M
9.530
0.130
0.375
0.005
14
250W Interrogator/Transponder GaN Power Transistor and Amplifier
6.2
55-QQP Common Source Package Dimensions and Terminal
Information
Figure 8 55-QQP Package Dimensions and Terminal Information
Pin 1: Drain, Pin 2: Source, Pin 3: Gate
Table 8 55-QQP Package Dimensions
Dim
Millimeters
Tol
Inches
Tol
A
5.840
0.250
0.230
0.010
B
4.060
0.250
0.160
0.010
C
3.170
0.050
0.125
0.002
D
1.270
0.130
0.050
0.005
E
1.020
0.130
0.040
0.005
F
1.570
0.130
0.062
0.005
G
0.130
0.020
0.005
0.001
H
8.120
0.250
0.320
0.010
I
45°
5°
45°
5°
J
5.080
0.250
0.200
0.010
K
1.400
0.130
0.055
0.005
15
250W Interrogator/Transponder GaN Power Transistor and Amplifier
6.3
Overall Pallet Dimensions
Figure 9 Pallet Package Dimensions
Dimensions 1.200" × 0.600" × 0.150"
16
Similar pages