1011GN-250E/EL/EP Datasheet 250W Interrogator/Transponder GaN Power Transistor and Amplifier 250W Interrogator/Transponder GaN Power Transistor and Amplifier Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 E-mail: [email protected] www.microsemi.com About Microsemi Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com. ©2016 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. 2 250W Interrogator/Transponder GaN Power Transistor and Amplifier Revision History 1.1 Revision 1.0 Revision 1.0 was the first publication of this document. 3 250W Interrogator/Transponder GaN Power Transistor and Amplifier Contents Revision History.............................................................................................................................. 3 1.1 Revision 1.0 ................................................................................................................................................ 3 2 Product Overview .................................................................................................................... 7 2.1 Applications ............................................................................................................................................... 7 2.1.1 Key Features ................................................................................................................................ 8 3 Electrical Specifications ............................................................................................................ 9 3.1 Absolute Maximum Ratings ....................................................................................................................... 9 3.2 Electrical Characteristics at 25 °C ............................................................................................................... 9 3.3 Functional Characteristics at 25 °C ............................................................................................................ 9 3.4 Typical Broadband Performance Data (32 µS, 2% Pulsing) ...................................................................... 10 3.5 Critical Performance at PIN = 2.5 W (34 dBm) .......................................................................................... 10 4 Transistor Impedance Information......................................................................................... 11 5 Transistor Test Information .................................................................................................... 12 5.1 Transistor Test Circuit Diagram ................................................................................................................ 12 6 Product Outline and Terminal Information ............................................................................ 14 6.1 55-QQ Common Source Package Dimensions and Terminal Information ................................................ 14 6.2 55-QQP Common Source Package Dimensions and Terminal Information.............................................. 15 6.3 Overall Pallet Dimensions ........................................................................................................................ 16 4 250W Interrogator/Transponder GaN Power Transistor and Amplifier List of Figures Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550")................................................................................ 7 Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230").............................................................................. 7 Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150") ................................................................................. 7 Figure 4 Typical Broadband Performance Data Graphs ............................................................................................. 10 Figure 5 Impedance Definition................................................................................................................................... 11 Figure 6 Transistor Test Circuit .................................................................................................................................. 12 Figure 7 55-QQ Package Dimensions and Terminal Information ............................................................................... 14 Figure 8 55-QQP Package Dimensions and Terminal Information ............................................................................. 15 Figure 9 Pallet Package Dimensions .......................................................................................................................... 16 5 250W Interrogator/Transponder GaN Power Transistor and Amplifier List of Tables Table 1 Absolute Maximum Ratings ............................................................................................................................ 9 Table 2 Typical Electrical Characteristics at 25 °C ........................................................................................................ 9 Table 3 Typical Functional Characteristics at 25 °C...................................................................................................... 9 Table 4 Typical Broadband Performance Data (32 µS, 2% Pulsing) ........................................................................... 10 Table 5 Critical Performance at PIN = 2.5 W (34 dBm) ............................................................................................... 10 Table 6 Component List 1011GN-250E/EL ................................................................................................................. 12 Table 7 55-QQ Package Dimensions .......................................................................................................................... 14 Table 8 55-QQP Package Dimensions ........................................................................................................................ 15 6 250W Interrogator/Transponder GaN Power Transistor and Amplifier 2 Product Overview The 1011GN-250E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT transistor/pallet amplifier capable of providing over 20.5 dB typical gain, 250 W of pulsed RF output power under several pulse formats including mode-S ELM across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance and is hermetically sealed. Available in two package types, both the bolt-down flange 55-QQ package and the solder-down earless flange 55-QQP package, as well as mounted in a 50 Ω IN/OUT pallet, the transistor is designed specifically for IFF, Mode-S, TCAS, and avionics secondary radar applications, and it utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification: EAR-99. Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550") Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230") Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150") 2.1 Applications The 1011GN-250E and 1011GN-250EL transistors and the 1011GN-250EP pallet are specifically designed for IFF, Mode-S, TCAS, and avionics secondary radar applications. 7 250W Interrogator/Transponder GaN Power Transistor and Amplifier 2.1.1 Key Features The following are the key features of the 1011GN-250E/EL E-Class Earless/Eared GaN transistor: • 1030–1090 MHz, 250 W pulsed output power, 32 µS 2% pulsing • Common source , Class AB, 50 VDD bias voltage • High efficiency: >70% typical across the frequency band • Extremely compact size • High power gain: 20.5 dB typical • Excellent gain flatness: 0.1 dB typical • Ideal for IFF, Mode-S, TCAS, and avionics secondary radar applications • Utilizes all-gold metallization and eutectic die attach for highest reliability • 50 Ω IN/OUT lumped element, very small footprint, plug-and-play pallets available 8 250W Interrogator/Transponder GaN Power Transistor and Amplifier 3 Electrical Specifications 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings at 25 °C unless otherwise specified. Table 1 Absolute Maximum Ratings Rating Units Maximum power dissipation Device dissipation at 25 °C 460 W Maximum voltage and current Drain-Source voltage (VDSS) 125 V Gate-Source voltage (VGS) –8 to 0 V Storage temperature (TSTG) –55 to 125 °C Operating junction temperature 200 °C Maximum temperatures 3.2 Value Electrical Characteristics at 25 °C The following table shows the typical electrical characteristics at 25 °C. Table 2 Typical Electrical Characteristics at 25 °C Symbol Characteristics Test Conditions Min Typ Max POUT Output power PIN = 2.5 W, Freq = 1030, 1090 MHz 250 280 W GP Power gain PIN = 2.5 W, Freq = 1030, 1090 MHz 20 20.5 dB ȠD Drain efficiency PIN = 2.5 W, Freq = 1030, 1090 MHz 60 75 % Dr Droop PIN = 2.5 W, Freq = 1030, 1090 MHz VSWR-T Load mismatch tolerance POUT = 250 W, Freq = 1030 MHz, 32 µS2% 5:1 ӨJC Thermal resistance 32 µS, 2% duty cycle 0.68 0.14 0.5 Units dB °C/W Bias Condition: VDD = +50 V, IDQ = 60 mA constant current (VGS = –2.0 to –4.5 V typical) 3.3 Functional Characteristics at 25 °C Table 3 Typical Functional Characteristics at 25 °C Symbol Characteristic Test Conditions ID(Off) Drain leakage current IG(Off) Gate leakage current Min Typ Max Units VGS = –8 V, VD = 125 V 24 mA VGS = –8 V, VD = 0 V 8 mA 9 250W Interrogator/Transponder GaN Power Transistor and Amplifier 3.4 Typical Broadband Performance Data (32 µS, 2% Pulsing) Table 4 Typical Broadband Performance Data (32 µS, 2% Pulsing) Frequency PIN (W) POUT (W) ID (mA) IRL (dB) ȠD (%) GP (dB) Droop (dB) 1030 MHz 2.5 284 0.20 –8.0 72 20.5 0.12 1090 MHz 2.5 283 0.18 –12.0 78 20.5 0.12 Figure 4 Typical Broadband Performance Data Graphs 3.5 Critical Performance at PIN = 2.5 W (34 dBm) Table 5 Critical Performance at PIN = 2.5 W (34 dBm) Freq (GHz) Test Condition PO (W) Gain (dB) Eff (%) Droop (dB) 1.030 32 µS – 2% 283 20.5 72 0.12 1.030 128 µS – 10% 269 20.3 62 0.30 1.090 32 µS – 2% 284 20.5 78 0.12 1.090 128 µS – 10% 275 20.7 71 0.30 10 250W Interrogator/Transponder GaN Power Transistor and Amplifier 4 Transistor Impedance Information The following diagram shows the transistor impedance information for 1011GN-250E/EL/EP. Figure 5 Impedance Definition Output Matching Network D Input Matching Network G S ZLOAD 50 Ω ZSOURCE 50 Ω Note: ZSOURCE is looking into the input circuit ZLOAD is looking into the output circuit For information about source and load impedances for 1011GN-250E/EL/EP, contact your Microsemi representative. 11 250W Interrogator/Transponder GaN Power Transistor and Amplifier 5 Transistor Test Information 5.1 Transistor Test Circuit Diagram Figure 6 Transistor Test Circuit The board material is Rogers Duroid 6006, 0.250" thickness, and εr = 6.15. The following table lists the components for 1011GN-250E/EL. Table 6 Component List 1011GN-250E/EL Item Description Value C1 Chip capacitor A size – ATC 600S series 68 pF C2 Chip capacitor A size – ATC 600S series 68 pF C3 Chip capacitor A size – ATC 600S series 9.1 pF C4 Chip capacitor A size 470 pF C5 Chip capacitor B size 4.7 uF C6 Chip capacitor A size – ATC 600S series 5.6 pF C7 Chip capacitor A size 2 to 2.5 pF C8 Chip capacitor A size – ATC 600S series 1.2 pF C9 Electrolytic capacitor (63 V) 470 uF C10 Chip capacitor A size – ATC 600S series 6.8 pF C11 Chip capacitor A size – ATC 600S series 1.2 pF 12 250W Interrogator/Transponder GaN Power Transistor and Amplifier Item Description Value R1 Chip resistor size 0805 40.2 Ω R2 Chip resistor size 0805 5.1 Ω L1 Chip inductor size 0805 47 nH L2 24 AWG Cu wire, Diameter = 0.07" 1 Turn L3 24 AWG Cu wire, Length = 0.280" U Shape 13 250W Interrogator/Transponder GaN Power Transistor and Amplifier 6 Product Outline and Terminal Information The 1011GN-250E transistor is available in the 55-QQP case outline and the 1011GN-250EL transistor is available in the 55-QQP case outline. The 1011GN-250EP is available in the 90-1011GN250EP pallet outline. All three products are configured for common source operation. 6.1 55-QQ Common Source Package Dimensions and Terminal Information Figure 7 55-QQ Package Dimensions and Terminal Information Pin 1: Drain, Pin 2: Source, Pin 3: Gate Table 7 55-QQ Package Dimensions Dim Millimeters Tol Inches Tol A 13.970 0.250 0.550 0.010 B 4.570 0.250 0.160 0.010 C 3.860 0.330 0.152 0.013 D 1.270 0.130 0.050 0.005 E 1.020 0.130 0.040 0.005 F 1.700 0.130 0.067 0.005 G 0.130 0.025 0.005 0.001 H 8.130 0.250 0.320 0.010 I 45° 5° 45° 5° J 5.080 0.250 0.200 0.010 K 2.54 DIA 0.130 0.100 DIA 0.005 L 1.270 0.130 0.050 0.005 M 9.530 0.130 0.375 0.005 14 250W Interrogator/Transponder GaN Power Transistor and Amplifier 6.2 55-QQP Common Source Package Dimensions and Terminal Information Figure 8 55-QQP Package Dimensions and Terminal Information Pin 1: Drain, Pin 2: Source, Pin 3: Gate Table 8 55-QQP Package Dimensions Dim Millimeters Tol Inches Tol A 5.840 0.250 0.230 0.010 B 4.060 0.250 0.160 0.010 C 3.170 0.050 0.125 0.002 D 1.270 0.130 0.050 0.005 E 1.020 0.130 0.040 0.005 F 1.570 0.130 0.062 0.005 G 0.130 0.020 0.005 0.001 H 8.120 0.250 0.320 0.010 I 45° 5° 45° 5° J 5.080 0.250 0.200 0.010 K 1.400 0.130 0.055 0.005 15 250W Interrogator/Transponder GaN Power Transistor and Amplifier 6.3 Overall Pallet Dimensions Figure 9 Pallet Package Dimensions Dimensions 1.200" × 0.600" × 0.150" 16