2N7002WT1(SOT 323)

WILLAS
FM120-M+
THRU
2N7002WT1
FM1200-M+
Small Signal MOSFET 115 mA, 60 V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
N–Channel SOT–323
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
capability,
low
forward
• High
We declare
that the
material
ofvoltage
productdrop.
• current
capability.
• High surge
compliance
with RoHS requirements.
overvoltage protection.
• Guardring
• ESDforProtected:1000V
• Ultra high-speed switching.
• Pb-Free
package
available
epitaxial planar
chip,is
metal
silicon junction.
• Silicon
parts
meet environmental
of ”G”
• Lead-free
RoHS
product
for packing standards
code suffix
•
MIL-STD-19500 /228
Halogen free product for packing
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT– 323
code suffix “H”
Mechanical
data
MAXIMUM RATINGS
flame retardant
• Epoxy : UL94-V0 rated
Rating
Symbol
Value
: Molded plastic,
SOD-123H
• CaseDrain–Source
Voltage
VDSS
60
,
• Terminals
:Plated
terminals,
Drain–Gate
Voltage
(RGS =solderable
1.0 MΩ) per MIL-STD-750
VDGR
60
Method 2026
Drain Current
ID
• Polarity– :Continuous
Indicated by
band1.)
TC cathode
= 25°C (Note
ID
IDM
– Continuous
C = 100°C (Note 1.)
Position : TAny
• Mounting
– Pulsed (Note 2.)
• Weight : Approximated 0.011 gram
Gate–Source Voltage
– Continuous
VGS
MAXIMUM
RATINGS AND ELECTRICAL
– Non–repetitive (tp ≤ 50 µs)
VGSM
Ratings at 25℃ ambient temperature unless otherwise specified.
RATINGS
0.031(0.8) Typ.
Vdc
Gate
Dimensions in inches and (millimeters)
3
Source
±20
Vdc
CHARACTERISTICS
±40
1
mAdc
THERMAL CHARACTERISTICS
2
Vpk
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
20
VRRM Symbol
Total
Device
Dissipation
FR–5
Board
P
14
D
Maximum RMS Voltage
VRMS
(Note 3.) TA = 25°C
Maximum DC Blocking Voltage
20
V
DC
Derate above 25°C
Maximum Average Forward Rectified Current
IO
Thermal Resistance, Junction to Ambient
RθJA
Peak Forward Surge
Current
8.3
ms
single
half
sine-wave
Total Device Dissipation
PD
IFSM
superimposed on rated
load (JEDEC
method) 4.) TA = 25°C
Alumina
Substrate,(Note
Derate above
Typical Thermal Resistance
(Note25°C
2)
RΘJA
Typical JunctionThermal
Capacitance
(Note 1) Junction to AmbientCJ
Resistance,
Operating Temperature Range
Junction and Storage Temperature
Storage Temperature Range
Drain
(Top View)
Characteristic
Maximum Recurrent Peak Reverse
Voltage
Vdc0.031(0.8) Typ.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
0.024(0.6)
Simplified Schematic
TJ
TSTG
RθJA
TJ, Tstg
13
Max
30
225
21
1.8
30
14
Unit
40
mW
28
mW/°C
40
556
°C/W
300
mW
mW/°C
15
50
16
60
°C/W
-55 to +125
°C
-55 to
+150
10
100
115
150
120
200
Volts
35
42
56
70
105
140
Volts
50
60
80
100
150
200
Volts
1.0 MARKING DIAGRAM
& PIN ASSIGNMENT
30
2.4
417
18
80
40
120
3
PF
-556C
to +150
℃
- 65 to +175
1
℃/W
Amps
Amps
Drain
W
±115
±75
±800
0.040(1.0)
Unit
℃
2
Gate
Source
1. TheCHARACTERISTICS
Power Dissipation of the packageSYMBOL
may result
in a lower
continuous
drainFM150-MH FM160-MH FM180-MH
FM120-MH
FM130-MH
FM140-MH
FM1100-MH FM1150-MH FM1200-MH UNIT
current.
Volts
Maximum Forward Voltage at 1.0A DC
0.92
6C 0.85
= Device Code0.9
VF
0.50
0.70
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
W
=Month Code
0.5
Maximum Average
Reverse
Current
at
@T
A=25℃
3. FR–5 = 1.0 x 0.75 x 0.062 in.
IR
mAmps
10
@T A=125℃
Rated DC Blocking
Voltage= 0.4 x 0.3 x 0.025
4. Alumina
in 99.5% alumina.
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
ORDERING INFORMATION
Device
Marking
2N7002WT1 6C.
2012-06
2013-01
Shipping
3000 Tape & Reel
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N7002WT1
FM1200-M+
Small Signal MOSFET 115 mA, 60 V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA =resistance.
better reverse leakage current and thermal
in order to
• Low profile surface mounted application
Characteristic
Symbol
optimize board space.
OFFpower
CHARACTERISTICS
loss, high efficiency.
• Low
current capability,
low
forward voltage drop.
• High
Drain–Source
Breakdown
Voltage
V(BR)DSS
ID = 10 µAdc)
capability.
• High(Vsurge
GS = 0,
for overvoltage protection.
• Guardring
Zero Gate Voltage Drain Current
TJ = 25°C
IDSS
switching.
• Ultra(Vhigh-speed
TJ = 125°C
GS = 0, VDS = 60 Vdc)
• Silicon epitaxial planar chip, metal silicon junction.
Gate–Body
Leakage
Forwardstandards of
IGSSF
parts
meet Current,
environmental
• Lead-free
(VGS = 20 Vdc)/228
MIL-STD-19500
productLeakage
for packing
code suffix
"G"
• RoHS
Gate–Body
Current,
Reverse
IGSSR
Halogen
free
product
for
packing
code
suffix "H"
(VGS = – 20 Vdc)
SOD-123H
Min
Typ
0.146(3.7)
0.130(3.3)
60
–
–
–
–
–
–
–
–
–
Max
Unit
0.012(0.3) Typ.
–
Vdc
1.0
500
µAdc
1
µAdc
-1
µAdc
0.071(1.8)
0.056(1.4)
Mechanical data
ON CHARACTERISTICS (Note 2.)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Gate Threshold Voltage
• Case(V:DSMolded
= VGS, plastic,
ID = 250 SOD-123H
µAdc)
,
• Terminals
:Plated
terminals,
solderable per MIL-STD-750
On–State Drain Current
VGS(th)
• Polarity
: Indicated byOn–State
cathodeVoltage
band
Static Drain–Source
(VGS =Position
10 Vdc, ID
= 500 mAdc)
: Any
• Mounting
(V = 5.0 Vdc, ID = 50 mAdc)
• WeightGS: Approximated
0.011 gram
2.5
500
–
–
Vdc
mA
Dimensions in inches and (millimeters)
VDS(on)
–
–
3.75
–
–
0.375
Vdc
Static Drain–Source On–State Resistance
rDS(on)
Ohms
= 10 V, ID = 500
mAdc) AND
TC = ELECTRICAL
25°C
–
1.4
7.5
(VGS
MAXIMUM
RATINGS
CHARACTERISTICS
TC = 125°C
–
–
13.5
Ratings at 25℃
temperature unless otherwise
specified.
(VGSambient
–
1.8
7.5
= 5.0 Vdc, ID = 50 mAdc) TC = 25°C
Single phase half wave, 60Hz, resistive of inductive
load.
–
–
13.5
TC = 125°C
For capacitive load, derate current by 20%
Forward Transconductance
gFS
80
–
–
mmhos
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
(VDS ≥ 2.0
VDS(on), ID = 200 mAdc)
Marking Code
VRRM
12
20
13
30
14
40
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
DYNAMIC CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
1.6
0.031(0.8) Typ.
ID(on)
Method
(VDS ≥ 2.0
VDS(on)2026
, VGS = 10 Vdc)
1.0
0.031(0.8) Typ.
Output Capacitance
Maximum Average
Rectified
(VDSForward
= 25 Vdc,
VGS = Current
0, f = 1.0 MHz)
Peak ForwardReverse
Surge Current
8.3 ms
single half sine-wave
Transfer
Capacitance
(Vrated
25 Vdc,
VGSmethod)
= 0, f = 1.0 MHz)
superimposed on
(JEDEC
DS = load
IO
IFSM
Typical Thermal
ResistanceCHARACTERISTICS
(Note 2)
RΘJA
SWITCHING
(Note
2.)
Typical Junction Capacitance (Note 1)
Turn–On Delay Time
Operating Temperature Range
Turn–Off Range
Delay Time
Storage Temperature
CHARACTERISTICS
Diode Forward On–Voltage
(IS = 11.5 mAdc, VGS = 0 V)
Maximum Forward Voltage at 1.0A DC
50
Coss
60
42
18
80
–
10
100
17
70
56
80
Crss
–
1.0
30–
td(on)
40
120
–
td(off)
- 65 to–+175
100
10
2.5
115
150
50
25
105
150
5.0
120
200
pF
140
Volts
Volts
Volts
200
pF
Amps
pF
Amps
℃/W
7
20
-55 to +150
11
40
PF
ns
℃
ns
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Source Current Continuous
@T A=125℃
(Body Diode)
Rated DC Blocking Voltage
NOTES:
TSTG
Maximum Average Reverse Current at @T A=25℃
16
60
CJ
(V DD = 25 Vdc
-55 to +125
TJ , ID ^ 500 mAdc,
RG = 25 Ω, RL = 50 Ω, Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
15
50
C
35iss
IR
Source Current Pulsed
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.50
VSD
0.70
–
–
0.85
–1.5
0.9
Vdc
0.92
IS
0.5
–
10
–
–115
mAdc
ISM
–
–
–800
mAdc
Volts
mAmps
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
2- Thermal Resistance From Junction to Ambient
2012-06
2013-01
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N7002WT1
FM1200-M+
Small Signal MOSFET 115 mA, 60 V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
in orderELECTRICAL
to
• Low profile surface mounted application
TYPICAL
CHARACTERISTICS
optimize board space.
VDS = 10 V
7V
6V
Mechanical
data
0.6
5V
• Epoxy
0.4 : UL94-V0 rated flame retardant
4V
• Case0.2: Molded plastic, SOD-123H
3 V,
• Terminals
:Plated terminals, solderable per MIL-STD-750
0
0
1.0 2.02026
3.0 4.0 5.0
6.0
7.0 8.0
Method
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Polarity : Indicated by cathode band
9.0
125°C
0.6
0.4
0.040(1.0)
0.024(0.6)
0.2
0.031(0.8) Typ.
10
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
10
Figure 2. Transfer Characteristics
RATINGS
1.6
VRRM
12
20
13
30
VRMS
14
21
Maximum DC Blocking
Voltage
1.0
VDC
20
30
Maximum Average
0.8 Forward Rectified Current
IO
IFSM
0.6 Current 8.3 ms single half sine-wave
Peak Forward Surge
superimposed on0.4
rated load (JEDEC method)
-ā20
+ā20
+ā60
+ā100
RΘJA
T, TEMPERATURE (°C)
Typical Junction Capacitance (Note 1)
CJ
Figure 3. Temperature versus
Static
Operating Temperature Range
TJ
Typical Thermal Resistance (Note 2)
Storage Temperature Range
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum RMS 1.2
Voltage
-ā60
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
9.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1.2
1.4 Peak Reverse Voltage
Maximum Recurrent
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
2.4
Ratings at 25℃ ambient temperature unless otherwise specified.
2.2
Single phase half wave,
VGS =60Hz,
10 V resistive of inductive load.
2.0
For capacitive load, derate
by 20%
mA
ID = 200 current
1.8
Marking Code
25°C
-ā55°C
0.071(1.8)
0.056(1.4)
•
Figure 1. Ohmic Region
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
0.8
8V
MIL-STD-19500 /228
RoHS1.0product for packing code suffix "G"
Halogen
0.8 free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
1.0
ID, DRAIN CURRENT (AMPS)
•
I D, DRAIN CURRENT (AMPS)
• Low power loss, high efficiency.
current capability, low forward voltage drop.
• High2.0
surge capability.
• High1.8
T = 25°C
• Guardring forA overvoltage protection.
1.6
VGS = 10 V
• Ultra high-speed switching.
1.4 epitaxial planar chip, metal silicon junction.
9V
• Silicon
parts meet environmental standards of
• Lead-free
1.2
1.0
14
0.95
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
0.9
28
35
42
56
70
105
140
Volts
40
0.85
50
60
80
100
150
200
Volts
1.0
30
0.8
0.75
+ā140
0.7
-ā60
Amps
Amps
-ā20
+ā20
+ā100
+ā60
40
T, TEMPERATURE (°C)
120
-55 to
+150 Gate
Figure 4. Temperature
versus
+ā140
℃/W
-55 to +125
Drain–Source On–Resistance
TSTG
PF
℃
Voltage
- 65Threshold
to +175
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2013-01
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2N7002WT1
FM1200-M+
Small Signal MOSFET 115 mA, 60 V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
SOT−323
optimize board space.
.054(1.35)
.045(1.15)
.004(0.10)MIN.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
.087(2.20)
• Guardring for overvoltage protection.
.070(1.80)
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
.056(1.40)
Method 2026
0.012(0.3) Typ.
• Polarity : Indicated by cathode band
.047(1.20)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
20
VRRM
.016(0.40)
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
Dimensions
IFSM
.008(0.20)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
CHARACTERISTICS
120
200
Volts
28
35
42
56
70
105
140
Volts
40
50
60
80
100
150
200
Volts
1.0
30
40
120
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
FOOTPRINT*
0.50
0.70
IR
℃
0.85
10
0.9
0.92
Volts
mAmps
1.9
0.075
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.9
0.035
0.7
0.028
2013-01
115
150
0.5
2012-06
10
100
0.65
@T A=125℃
2- Thermal Resistance From Junction to Ambient
18
80
SYMBOL
0.025 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
0.65 FM120-MH FM130-MH FM140-MH
Maximum Average Reverse Current at @T A=25℃
16
60
-55 to +125
V0.025
F
Maximum Forward Voltage at 1.0A DC
15
50
SOLDERING
TSTG
Storage Temperature Range
14
40
in inches and (millimeters)
RΘJA
Typical Thermal Resistance (Note 2)
Rated DC Blocking Voltage
13
30
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
.004(0.10)MAX.
Single phase half wave, 60Hz, resistive
of inductive load.
For capacitive load, derate current by 20%
SCALE 10:1
mm inches
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Small Signal MOSFET 115 mA, 60 V
2N7002WT1
Ordering Information: Device PN 2N7002WT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2013-01
WILLAS ELECTRONIC CORP.
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