WILLAS FM120-M+ THRU 6.07 FM1200-M+ 1.0A SURFACEPlastic-Encapsulate MOUNT SCHOTTKY BARRIER RECTIFIERS SOT-723 MOSFETS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. N-Channel MOSFET high efficiency. • Low power loss, • High current capability, low forward voltage drop. FEATURES • High surge capability. Low on-resistance for overvoltage protection. •zGuardring high-speed switching. •zUltraFast switching speed • Silicon epitaxial planar chip, metal silicon junction. Low voltage drive makes this deviceofideal for portable equipment parts meet environmental standards •zLead-free MIL-STD-19500 /228 z Drive circuits can be simple • RoHS product for packing code suffix "G" zHalogen Parallel use isforeasy free product packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT-723 0.071(1.8) 0.056(1.4) 1. GATE 2. SOURCE 3. DRAIN Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 APPLICA TIONS rated flame retardant Case : Molded plastic, SOD-123H •Interfacing , Switching , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 MARKING:KN • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) KN MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Pb-Free package is available SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH RATINGS RoHS product for packing code suffix ”G” Marking Code 12 13 14 15 16 Halogen free product for packing code suffix “H” 20 30 40 50 60 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 14 21 28 35 FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 42 18 80 10 100 115 150 120 200 Volts 56 70 105 140 Volts 200 Volts diode is included between V the gate and terminals to the diode80against100 static electricity Maximum*A DCprotection Blocking Voltage 20 the source 30 40 50protect60 150 DC theForward product is in use. Use a protection Maximumwhen Average Rectified Current IO circuit when the fixed voltages are exceeded. 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum ratings (Ta=25℃ Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Operating Temperature Range Parameter Storage Temperature Range CJ TJ TSTG Drain-source voltage Gate-source voltage CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Power dissipation @T A=125℃ NOTES: Junction temperature 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IR Thermal resistance from junction to ambient Storage temperature 2- Thermal Resistance From Junction to Ambient Amps 40 120 -55Symbol to +125 Value -55 to +150 - 65 to +175 VDS ℃/W PF Units ℃ ℃ 30 V VGS FM140-MH FM150-MH FM160-MH ±20FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH VF Maximum Forward Voltage 1.0A DC Continuous drainatcurrent Rated DC Blocking Voltage 30 unless otherwise noted) RΘJA Amps IFSM ID0.50 PD 0.70 ±100 0.5 0.85 0.9 mA Volts 0.15 W RθJA 833 ℃/W TJ 150 Tstg -55 ~+150 10 0.92 mAmps ℃ * Pw≤10µs ,Duty cycle≤1% 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 6.07 FM1200-M+ SOT-723 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Electrical (Ta=25℃ unless otherwise noted) for overvoltage protection. • Guardringcharacteristics • Ultra high-speed switching. planar chip, metal silicon junction. • Silicon epitaxial Parameter Symbol Test Condition • Lead-free parts meet environmental standards of Drain-source breakdown MIL-STD-19500 /228 voltage V(BR) DSS VGS = 0V, ID =10µA IGSS VDS =0V, VGS =±20V IDSS VDS =30V, VGS =0V for packing code suffix "G" • RoHS productleakage Gate-source current Halogen free product for packing code suffix "H" Zero gate voltage drain current Mechanical data Gate threshold voltage : UL94-V0 rated flame retardant • Epoxy VGS(th) 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Min Typ VDS =3V, ID =100µA gFS 0.8 5 µA 8 0.031(0.8) Typ. 7 Coss Reverse transfer capacitance Crss 4 Turn-on delay time td(on) 15 V Ω 13 mS Dimensions in inches and (millimeters) Ciss 13 VDS =5V,VGS =0V,f =1MHz Ratings at 25℃ ambient temperature unless otherwise specified. Rise time tr Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Turn-off delay time td(off) RATINGS 1.0 1.5 • Polarity : Indicated by cathode band Input capacitance • Mounting Position : Any Output • Weightcapacitance : Approximated 0.011 gram Fall time µA 0.040(1.0) 0.024(0.6) pF 9 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ±1 20 VDS =3V, ID =10mA Unit V • Case : Molded plastic, SOD-123H VGS =4V, ID =10mA 0.031(0.8) Typ. RDS(on) , • Terminals :Plated terminals, solderable per MIL-STD-750VGS =2.5V, ID =1mA Method 2026 Max 30 Static drain-source on-state resistance Forward transconductance 0.071(1.8) 0.056(1.4) VGS=5V,VDD=5V, ID =10mA 35 RL=500Ω,RG=10Ω 80 ns SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT tf Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 80 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 WILLAS ELECTRONIC CORP. 2012-0 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 6.07 FM1200-M+ SOT-723 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers Output Characteristics better reverse leakage current and thermal resistance. 0.20 profile surface mounted application in order to • Low 4.0V VGS=3.0V Ta=25 ℃ optimize board space. 3.5V 100 ID DRAIN CURRENT VGS=2.0V • Epoxy : UL94-V0 rated flame retardant V =1.5V • Case : Molded plastic, SOD-123H 0.00 , 0 1 2 3 4 5 • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) 10 3 1 0.040(1.0)V =3V DS 0.024(0.6) 0.3 Ta=25℃ GS DRAIN TO SOURCE VOLTAGE Method 2026 VDS 0.012(0.3) Typ. (mA) (A) ID DRAIN CURRENT MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.146(3.7) 0.130(3.3) 30 GS 0.05 Transfer Characteristics SOD-123H 200 Pulsed loss, high efficiency. • Low power • High current capability, low forward voltage drop. 0.15 surge capability. • High • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. V =2.5V 0.10 • Lead-free parts meet environmental standards of • Pb Free Product 0.1 Pulsed 0.031(0.8) Typ. 0 0.031(0.8) Typ. 1 (V) 2 3 GATE TO SOURCE VOLTAGE • Polarity : Indicated by cathode band • Mounting Position : Any RDS(ON) —— ID • Weight : Approximated 0.011 gram 60 VGS Dimensions in inches and (millimeters) RDS(ON) —— VGS 15 Ta=25℃ Ta=25℃ Pulsed Pulsed MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 20 Voltage Maximum RMS VRMS 14 21 VDC 20 30 Maximum DC Blocking Voltage Maximum Average Forward Rectified Current VGS=2.5V Peak Forward Surge Current 8.3 ms single half sine-wave 0 rated load (JEDEC method) superimposed on 3 1 10 IO IFSM 30 Typical Thermal Resistance (Note 2) CURRENT ID (mA)RΘJA DRAIN 200 100 IS —— VSD VGS=0V CHARACTERISTICS IS (mA) NOTES: 5 28 35 42 40 50 60 100 200 0 0 80 ID=100mA 18 10 100 115 150 120 200 Volts 56 70 105 140 Volts 80 100 150 200 Volts 1.0 30 5 Amps Amps 10 40 GATE TO SOURCE VOLTAGE 120 -55 to +125 15 VGS 20 ℃/W (V) PF -55 to +150 ℃ - 65 to +175 TSTG VF Maximum Average Reverse Current at @T A=25℃ 30 16 60 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT T =25℃ a Maximum Forward Voltage at 1.0A DC Pulsed 0.50 0.70 0.85 0.5 IR @T A=125℃ Rated DC Blocking Voltage 15 50 VGS=4V TJ Operating Temperature Range 14 40 ID=50mA CJ Typical Junction Capacitance (Note 1) ( ) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Storage Temperature Range 10 RDS(ON) RATINGS ON-RESISTANCE RDS(ON) ( ) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 40 For capacitive load, derate current by 20% ON-RESISTANCE 4 (V) 10 0.9 0.92 Volts mAmps 10 SOURCE CURRENT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 3 1 0.3 0.1 2012-060.2 2012-0 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 VSD (V) 1.0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 6.07 THRU FM1200-M+ SOT-723 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Outline Drawing • Batch process design, excellent power dissipation offers SOT-723 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .049(1.25) .045(1.15) Halogen free product for packing code suffix "H" .030(0.75) .034(0.85) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .049(1.25) .045(1.15) MIL-STD-19500 /228 .006(0.15)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" Mechanical data 0.012(0.3) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .003(0.8) Marking Code .007(0.17) .003(0.07) FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: I .011(0.27) @T A=125℃ .006(0.15) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. R .034(0.85) .030(0.45) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.5 0.9 0.92 Volts mAmps 10 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) Rev.C 2012-06 WILLAS ELECTRONIC CORP. 2012-0 WILLAS ELECTRONIC CORP.