WILLAS FM120-M+ SESD5L5.0T1 THRU ESD Protection DiodesSCHOTTKY with Ultra−Low FM1200-M+ 1.0A SURFACE MOUNT BARRIERCapacitance RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. The SESD5L is designed to protect voltage sensitive components that capability. • High surge require •ultra−low capacitance from ESD and transient voltage events. Guardring for overvoltage protection. Excellent clamping capability, low capacitance, low leakage, and fast • Ultra high-speed switching. response• Silicon time, make these parts ideal for ESD protection on designs epitaxial planar chip, metal silicon junction. where board space is at a premium. Because of its low capacitance, it is • Lead-free parts meet environmental standards of suited forMIL-STD-19500 use in high frequency /228 designs such as USB 2.0 high speed and antenna• line applications. RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 2 Halogen free product for packing code suffix "H" 1 Specification Features: Mechanical data • Ultra Low Capacitance 0.5 pF Epoxy : UL94-V0 rated flame retardant Voltage • Low •Clamping Case Molded Dimensions: plastic, SOD-123H • • Small Body :Outline SOD– 523 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. , 0.031(0.8) Typ. 0.047″ x 0.032″ (1.20terminals, mm x 0.80 mm) • Terminals :Plated solderable per MIL-STD-750 Method Low Body Height: 0.024″2026 (0.6 mm) 1 2 Stand−off Voltage: 5 V by cathode band Dimensions in inches and (millimeters) • Polarity : Indicated PIN 1. CATHODE Low •Leakage Mounting Position : Any 2. ANODE Response Time is Typically < 1.0 ns • Weight : Approximated 0.011 gram IEC61000−4−2 Level 4 ESD Protection This is a Pb−Free Device RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM • • • • • • Pb-Free package is available •Ratings at 25℃ ambient temperature unless otherwise specified. Ordering information RoHSphase product packing suffixof”G” Single halffor wave, 60Hz,code resistive inductive load. Halogen free product for packing For capacitive load, derate current bycode 20%suffix “H” Device Marking 5L SESD5L5.0T1 Mechanical Characteristics: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH RATINGS CASE: Void-free, transfer-molded, thermosetting plastic 12 Marking Code 13 14 15 16 Epoxy Meets UL 94 V−0 Maximum Recurrent Peak Reverse Voltage 100% LEAD FINISH: Maximum RMS Voltage Matte Sn (Tin) VRRM 20 30 50 3000/Tape&Reel FM180-MH FM1100-MH FM1150-MH FM1200-MH 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM QUALIFIED MAX REFLOW TEMPERATURE: 260°C 40 Shipping Device Meets MSL 1 Requirements Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) MAXIMUM RATINGS Typical Thermal Resistance (Note 2) Rating Symbol Typical Junction Capacitance (Note 1) IEC 61000−4−2 (ESD)Range Operating Temperature Storage Temperature Range Contact Air Total Power Dissipation on FR−5 Board 25°C (Note 1) @ TA =CHARACTERISTICS Maximum Voltage at 1.0A DC Storage Forward Temperature Range RΘJA CJ Rated DC Blocking Voltage 40 120 Unit -55 kVto +125 -55 to +150 - 65 to +175 mW SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Tstg VF−55 to +150 °C IR−55 to +125 °C J @T A=125℃ Lead Solder Temperature − Maximum (10 Second Duration) Value ±10 TJ ±15 TSTG °PD° 200 Maximum Reverse Current at @T A=25℃T Junction Average Temperature Range 1.0 30 TL 260 °C 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: IPPVDC. Pulse 1-Peak Measured at Current 1 MHZ and applied reverse voltage of 4.0 m 8 x 20 Resistance sec. 2- Thermal From Junction to Ambient 5(Max) A Peak Power Dissipation Ppk 50(Max) W 8 x 20 m sec. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. 2016-04 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD5L5.0T1 THRU ESD Protection Diodes with Ultra−Low FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIERCapacitance RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline ELECTRICAL CHARACTERISTICS Features (TA = 25°C unless otherwise noted) process design, excellent power dissipation offers • Batch I current and thermal resistance. Symbolbetter reverse leakage Parameter • Low profile surface mounted application in order to IPP optimize Maximum Reverse board space.Peak Pulse Current power loss, high@ efficiency. VC• LowClamping Voltage IPP • High current capability, low forward voltage drop. VRWM Peak Reverse Voltage surge capability. • HighWorking IR • Guardring Maximum Leakage Current @ VRWM forReverse overvoltage protection. Ultra high-speed switching. • VBR Breakdown Voltage @ IT • Silicon epitaxial planar chip, metal silicon junction. IT • Lead-free Test Current parts meet environmental standards of MIL-STD-19500 /228 IF Forward Current • RoHS product for packing code suffix "G" VF Halogen Forward free Voltage product @ forIFpacking code suffix "H" SOD-123H IF 0.146(3.7) 0.130(3.3) VC VBR VRWM 0.012(0.3) Typ. V IR VF IT 0.071(1.8) 0.056(1.4) IPP data PpkMechanical Peak Power Dissipation Uni−Directional TVS : UL94-V0@rated C • Epoxy Capacitance VR = flame 0 and retardant f = 1.0 MHz plastic, SOD-123H • Case : Molded *See Application Note AND8308/D for detailed explanations of , datasheet parameters. • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : ApproximatedV0.011 gram I (mA) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types) RWM (V) VBR (V) @ IT (Note 2) R @ VRWM IT C (pF) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Device Ratings at 25℃ ambient temperature unless otherwise specified. Max Max Min Marking Device Single phase half wave, 60Hz, resistive of inductive load. S ESD5L5.0T1 5L 5.0 1.0 5.4 For capacitive load, derate current by 20% VC (V) @ IPP = 1 A (Note 3) VC Per IEC61000−4−2 (Note 4) mA Typ Max Max 1.0 0.5 0.9 9.8 Figures 1 and 2 See Below FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL RATINGS 2. VBR is measured with a pulse test current IT at an ambientFM120-MH temperature of 25°C. 12 13 14 15 16 18 10 115 120 4. For test procedure see Figures 3 and 4 and Application AND8307/D. 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM Note20 3. Surge current waveform per Figure 5. Marking Code Maximum RMS Voltage VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 70 105 140 80 100 150 200 1.0 30 IFSM RΘJA Typical Thermal Resistance (Note 2) 56 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2016-04 Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 2012-06 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD5L5.0T1 THRU ESD Protection Diodes with Ultra−Low FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIERCapacitance RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2016-04 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD5L5.0T1 THRU ESD Protection Diodes with Ultra−Low FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER Capacitance RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOD−523 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free .051(1.30) optimize board space. 0.146(3.7) 0.130(3.3) .043(1.10) Halogen free product for packing code suffix "H" Mechanical data 0.071(1.8) 0.056(1.4) .014(0.35) .009(0.25) .035(0.90) .028(0.70) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .008(0.20) .002(0.05) .028(0.70) .020(0.50) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage RRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage RMS 14 21 28 35 42 56 70 105 140 V DC 20 30 40 50 60 80 100 150 200 V Maximum DC Blocking Voltage .067(1.70) V V .059(1.50) V IO Maximum Average Forward Rectified Current 1.0 30 Dimensions in inches and (millimeters) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SOLDERING FOOTPRINT* VF 0.50 IR 1.40 0.0547 NOTES: 0.70 0.85 0.5 0.9 0.92 10 0.40 0.0157 V m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2016-04 2012-06 0.40 0.0157 SCALE 10:1 mm Ǔ ǒinches WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. SESD5L5.0T1 ESD Protection Diodes with Ultra−Low Capacitance Ordering Information: Device PN SESD5L5.0T1 ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2016-04 WILLAS ELECTRONIC CORP.