FM120-M+ 66 WILLAS THRU LESHAN RADIO COMPANY, LTD. FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Switching diode 6:,7&+,1*'LRGHV SOD-523 Package outline L1SS400GT1G .035(0.90) .028(0.70) • Applications .014(0.35) .009(0.25) Features SOD-123H 0.146(3.7) 0.130(3.3) 1 0.012(0.3) Typ. 2 .028(0.70) SOD - 723 .020(0.50) .008(0.20) .002(0.05) offers • Batch process design, excellent power dissipation High speed switching better reverse leakage current and thermal resistance. .051(1.30) • Applications • Features .043(1.10) • Low profile surface mounted application in order to 1) Extremely small surface mounting type. High optimize speed switching board space. 2) High Speed. • Low power loss, high efficiency. • Features 3) High reliability. • High current capability, low forward voltage drop. 1) Extremely small surface mounting type. • Construction • High surge capability. Silicon epitaxial planar 2) High Speed.for overvoltage protection. • Guardring • We declare that the material of product high-speed switching. • Ultra 3) High reliability. compliance with RoHS requirements. • Silicon epitaxial planar chip, metal silicon junction. • Construction .067(1.70) of Marking • Lead-free parts meet environmental standards • Device .059(1.50) /228 SiliconMIL-STD-19500 epitaxial planar L1SS400GT1G=3 • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) 1 CATHODE 2 ANODE Halogen free product for packing code suffix "H" ORDRING INFORMATION Mechanical data Device Marking ShippingABSOLUTE .006(0.15)MIN. MAXIMUM RATINGS (Ta = 25°C) 0.040(1.0) 0.024(0.6) Parameter Symbol Limits Unit Epoxy : UL94-V0 rated flame retardant 3000/Tape&Reel 1SS400-TG A Peak reverse voltage VRM 90 V Case : Molded plastic, SOD-123H 0.031(0.8) Typ. DC reverse voltage VR 0.031(0.8) Typ. 80 V , Peak forward current I FM 225 mA Terminals :Plated terminals, solderable per MIL-STD-750 Dimensions in inches and (Millimeters) Mean rectifying current IO 100 mA Method 2026 Surge current (1s) I surge 500 mA Junction temperature Tj 125 °C Dimensions in inches and (millimeters) Polarity : Indicated by cathode band Storage temperature Tstg – 55 ~ +125 °C • • Pb-Free package is available • product for packing code suffix "G" RoHS Halogen free product for packing code suffix "H" • • Mounting Position : Any Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ • Weight : Approximated 0.011 gram ELECTRICAL CHARACTERISTICS (Ta = 25°C) Symbol Min. Parameter Symbol Parameter Limits Forward voltage V – MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Reverse current I – Ratings at 25℃ voltage ambient temperature unless otherwise 90 – Peak reverse VRM specified. Capacitance between terminals C F R T Single phase half wave, 60Hz, resistive of inductive load. capacitivevoltage load, derate current by 20% DC VR Forreverse RATINGS IFM Mean rectifying current VRMS Maximum DC Blocking Voltage Surge current (1s) VDC Isurge – 4 ns VR=6V , IF=10mA , RL=100 V Ω V 12 20 13 14 Marking 30 40 14 21 20 30 Device 225 L1SS400GT1G 3 28 15 50 16 60 18 80 10 100 35 42 56 70 50 500 60 80 100 Shipping 100 4000/Tape&Reel 40 IO Maximum Average Forward Rectified Current Junction temperature Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage temperature 125 Tstg -55~+125 IFSM -55 to +125 TJ A Symbol CHARACTERISTICS Forward voltage Maximum Forward Voltage at 1.0A DC @T A=125℃ mA 120 200 V 105 140 V 150 200 V A ℃ ℃ 1/3 -55 to +150 P - 65 to +175 Min. Typ. Max. Unit Conditions SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF VF Maximum Average Reverse Current at @T A=25℃ mA 115 150 A TSTG Parameter mA ℃ 40 120 CJ Typical Junction Capacitance (Note 1) Operating Temperature Range=25℃ Electrical Ratings @T 1.0 30 T j RΘJA Typical Thermal Resistance (Note 2) Reverse current Rated DC Blocking Voltage Conditions I F=100mA VR=80V VR=0.5V , f=1MHz – ORDRING INFORMATION IO Maximum RMS Voltage Unit V µA pF 80 VRRM Maximum Recurrent Peak Reverse Voltage Storage Temperature Range trr Max. 1.2 0.1 3.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Peak forward current Marking Code Reverse recovery time Unit Typ. – – 0.72 IR IR 0.50 1.2 IF=100mA 0.85 V 0.70 0.5 0.9 V 0.1 μA 3.0 pF VR=0.5V,f=1MHZ 4 ns VR=6V,IF=10mA,RL=100Ω 10 0.92 VR=80V m NOTES: Capacitance between terminals CT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse recovery 2- Thermal Resistance Fromtime Junction to Ambient 2012-10 2012-06 trr WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 66 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ELECTRICAL CHARACTERISTIC SOD-123+ CURVES PACKAGE (Ta = 25°C) Package outline Features 1 Pb Free Product 1m • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H 0.1m 100m optimize board space. REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) • Low profile surface mounted application in order to • Low power loss, high efficiency. • High current capability, low forward voltage drop. 10m surge capability. • High • Guardring for overvoltage protection. • Ultra high-speed switching. 1m epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of • MIL-STD-19500 /228 RoHS 100µ product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 10µ 0.012(0.3) Typ. 1µ 0.071(1.8) 0.056(1.4) 100n 10n Mechanical data CAPACITANCE BETWEEN TERMINALS : CT (pF) 0 0.5 RATINGS VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 20 30 0.1 Maximum DC Blocking Voltage 0 2 4 6 8 VDC 12 10 14 100 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) RΘJA Junction50Capacitance CJ (Note 1) SURGE CURRENT : Isurge (A) Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V 28 35 42 56 70 105 140 V 200 V 0 20 100 30 60 10 80 150 FORWARD CURRENT : I F (mA) 1.0 Reverse recovery time characteristics 30 0 50 -55 to +125 A A 40 120 TJ Operating Temperature Range ℃ -55 to +150 0.01µF - 65 to D.U.T. +175 TSTG 20 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 5kΩ FM180-MH FM1100-MH FM1150-MH FM1200-MH U 10 VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ PULSE 0.50 GENERATOR0.70 OUTPUT 50Ω IR @T A=125℃ 5 Rated DC Blocking Voltage 1 1 10 100 1000 50Ω 0.9 0.85 SAMPLING OSCILLOSCOPE 0.92 V m Fig.6 Reverse recovery time (trr) measurement circuit 2- Thermal Resistance From Junction to Ambient 0.1 0.5 10 2 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1 Fig.4 Fig.3 Capacitance between Peak Forward Surge Current 8.3 ms single half sine-wave terminals IFSM NOTES: 2 40 Maximum Average Forward Rectified VOLTAGE Current REVERSE : VR (V) IO 0.031(0.8) Typ. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 0.2 Maximum Recurrent Peak Reverse Voltage REVERSE VOLTAGE : VR (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ 1 ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Typical 0.024(0.6) 100 120 80 Dimensions in inches and (millimeters) Marking Code 60 3 REVERSE RECOVERY TIME : trr (ns) 40 Fig.2 Reverse characteristics • Polarity : Indicated by cathode band 5 Position : Any • Mounting • Weight : Approximated 0.011 gram 2 20 0.031(0.8) Typ. Method 2026 10 0.040(1.0) 1n 10µ rated flame retardant • Epoxy0 : UL94-V0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 plastic, SOD-123H • Case : Molded FORWARD VOLTAGE : VF (V) , Forward characteristics • TerminalsFig.1 :Plated terminals, solderable per MIL-STD-750 10,000 PULSE WIDTH : TW (ms) Fig.5 Surge current characteristics 2012-10 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP