DTA123JCA(SOT 23)

WILLAS
FM120-M+
DTA123JCA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
for overvoltage
protection.
• Guardring
Epitaxial
Planar Die
Construction
Ultra
high-speed
switching.
•
Complementary NPN Types Available
epitaxial
planar chip, metal silicon junction.
• Silicon
Built-In
Biasing
Resistors
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
SOT-23
Features
.122(3.10)
.106(2.70)
.063(1.60)
.047(1.20)
x
x
x
•
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Pb-FreeMIL-STD-19500
package is available
/228
RoHS
product
for packing
code
suffix”G”
"G"
•
RoHS product
for packing
code
suffix
Halogen free product for packing code suffix "H"
Halogen
free product for packing code suffix “H”
data
EpoxyMechanical
meets UL 94 V-0
flammability rating
: UL94-V0
rated
• Epoxy
Moisure
Sensitivity
Level
1 flame retardant
• Case : Molded plastic, SOD-123H
,
Absolute•maximum
ratings
@ 25к
Terminals :Plated
terminals,
solderable per MIL-STD-750
•
•
0.040(1.0)
0.024(0.6)
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
.006(0.15)MIN.
0.031(0.8) Typ.
.110(2.80)
Single phase half wave, 60Hz, resistive of inductive load.
Electrical
Characteristics @ 25к
current by 20%
For capacitive load, derate
Symbol
Parameter
Min
Typ
Max
Unit
.008(0.20)
0.5
SYMBOL
--- FM130-MH
---FM120-MH
V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VI(off)
Input voltage RATINGS
(VCC=5V, IO=100­A)
.003(0.08)
----- 12 1.1 13 V
VMarking
(VO=0.3V, IO=5mA)
I(on)
Code
14
15
16
18
10
115
120
VO(on)
Output voltage (IO=5mA,Ii=0.25mA)
--0.1
20 0.3 30 V
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
II
Input current (VI=5V)
----3.6
mA
14
21
28
35
42
56
70
105
140
Maximum
RMS
Voltage
V
RMS
IO(off)
Output current (VCC=50V, VI=0)
----0.5
­A
.004(0.10)MAX.
GI
DC
(VO=5V, IO=10mA)
80VDC --- 20 --Maximum
DC current
Blockinggain
Voltage
30
40
50
60
80
100
150
200
R1
Input resistance
1.54
2.2
2.86
K¡
Maximum Average Forward Rectified Current
IO
1.0
R2/R1
Resistance ratio
17
21
26
Transition frequency
.020(0.50)
Peak
fT Forward Surge Current 8.3 ms single half sine-wave --- IFSM 250
--MHz
30
(VO=10V, IO=5mA, f=100MHz)
.012(0.30)
.055(1.40)
.035(0.89)
.083(2.10)
Method
2026
Symbol
Parameter
Min
Typ
Max
Unit
VCC
Supply voltage
--50
--V
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
VIN
Input voltage
-5
--+12
V
Mounting
Position : Any
• Power
Pd
dissipation
--200
--mW
Tj
--150
--ć
• Junction
Weight :temperature
Approximated 0.011 gram
Tstg
Storage temperature
-55
--150
ć
IO
100
Output current
mA
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
IC(MAX)
100
Ratings at 25℃ ambient temperature unless otherwise specified.
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
40
Dimensions
in
inches
and
(millimeters)
120
-55 to +150
-55 to +125
- 65 to +175
TSTG
*Marking: E32
CHARACTERISTICS
Suggested Solder
Pad Layout
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
.031
.800
0.9
0.92
0.5
10
.035
.900
NOTES:
.079
2.000
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
inches
mm
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA123JCA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
14
40
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
PNP Digital Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
FM120-M+
DTA123JCATHRU
FM1200-M+
Pb Free Product
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
Device PN Packing high efficiency.
• Low power loss,
0.130(3.3)
(2)
low forward
voltage drop.
• High current capability, (1)
DTA123JCA –T
G
‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Polarity : Indicated by cathode band
•• Mounting
Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximumwhich may be included on WILLAS data sheets and/ or specifications can RMS Voltage
VRMS
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Am
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
Am
use of any product or circuit. IFSM
superimposed on rated load (JEDEC method)
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
P
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
- 65 to +175
Storage Temperature
Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related ℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Vo
0.9
Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
mA
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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