WILLAS FM120-M+ DTC114TUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Features• Low power loss, high efficiency. x x 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • • x 0.012(0.3) Typ. .004(0.10)MIN. • 0.146(3.7) 0.130(3.3) SOT-323 High current capability, low forward voltage drop. Pb-Free•package is available • High surge capability. RoHS product for packing code suffix ”G” for overvoltage protection. • Guardring Ultra high-speed switching. • Halogen free product for packing code suffix “H” chip, metal silicon junction. • Silicon Epoxy meets ULepitaxial 94 V-0 planar flammability rating Lead-free parts Moisure •Sensitivity Levelmeet 1 environmental standards of MIL-STD-19500 /228the configuration of an inverter circuit Built-in bias resistors enable RoHS product for packing code suffix "G" • without connecting external input resistors (see equivalent circuit) Halogen free product for packing code suffix "H" The bias resistors consist of thin-film resistors with complete Mechanical isolation to allow negative data biasing of the input. They also have the : UL94-V0 rated flame retardant • Epoxy advantage of almost completely eliminating parasitic effects Only the •on/off needSOD-123H to be set for operation, making Case conditions : Molded plastic, , device design easy • Terminals :Plated terminals, solderable per MIL-STD-750 .010(0.25) .003(0.08) 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 Absolute Maximum • PolarityRatings : Indicated by cathode band Dimensions in inches.087(2.20) and (millimeters) Value Unit 50 Collector-Emitter Voltage VCEO 50 Emitter-Base voltage VEBO 5 MAXIMUM RATINGS AND ELECTRICAL Collector Current-Continuous IC 100 Ratings at 25℃ ambient temperature unless otherwise specified. Collector Dissipation PC 200 Single phase half wave, 60Hz, resistive of inductive load. Junction Temperature 150 J For capacitive load, derate current byT20% Storage Temperature Range RATINGS TSTG Sym Parameter Maximum RMS Voltage Collector-Base Breakdown Voltage V(BR)CBOMaximum DC Blocking Voltage (IC=50uA, IE=0) V V V CHARACTERISTICS mA .070(1.80) mW к .056(1.40) к -55~150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Electrical Characteristics Maximum Recurrent Peak Reverse Voltage .054(1.35) .045(1.15) Parameter Symbol • Mounting Position : Any Collector-Base Voltage VCBO • Weight : Approximated 0.011 gram VRRM Min VRMS Typ 15 50 .047(1.20) 16 18 60 80 28 35 42 40 50 60 .004(0.10)MAX. 1.0 30 12 20 13 30 14 40 14 20--- 21 30V Max Unit 10 100 115 150 120 200 56 70 105 140 80 100 150 VDC--- *Marking: 04 .043(1.10) .032(0.80) 200 Collector-Emitter Breakdown Voltage IO--50 --V V(BR)CEOMaximum Average Forward Rectified Current (IC=1mA, IB=0) Emitter-Base Breakdown Voltage 5 ----V V(BR)EBOPeak Forward Surge Current 8.3 ms single half sine-wave IFSM (IE=50uA, IC=0) .016(0.40) superimposed on rated load (JEDEC method) Collector Cut-off Current ----0.5 uA ICBO .008(0.20) =50V, IResistance =0) (VCB 40 Typical Thermal (Note 2) R ΘJA E Emitter Cut-off Current (Note 1) 120 Typical Junction Capacitance C J IEBO ----0.5 uA (VEB=4V, IC=0) -55 to +125 -55 to +150 Operating Temperature Range TJ DC Current Gain Dimensions in inches and (millimeters) 100 TSTG 300 600 --hFE Storage Temperature Range 65 to +175 (VCE=5V, IC=1mA) Collector-Emitter Saturation Voltage ----0.3 V VCE(sat) (IC=10mA, IB=1mA) Suggested SolderFM1100-MH FM1150-MH FM1200-MH FM160-MH FM180-MH CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH R1 Input Resistor 7 10 13 K¡ 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 Pad Layout 0.85 Transition Frequency 250 --MHz fT Maximum Average Reverse Current at @T A=25℃--0.700.5 (VCE=10V, IE =-5mA, f=100MHz) IR 10 @T A=125℃ Rated DC Blocking Voltage 50 0.90 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1.90 mm 2- Thermal Resistance From Junction to Ambient 0.65 0.65 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114TUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114TUATHRU Digital FM1200-M+ 1.0ANPN SURFACE MOUNTTransistor SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Features Pb Free Product PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) Device PN Packing high efficiency. • Low power loss, 0.130(3.3) (2) low forward voltage drop. • High current capability, (1) DTC114TUA –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximumwhich may be included on WILLAS data sheets and/ or specifications can RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. A Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A use of any product or circuit. superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ IR m of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.