DTC114TUA(SOT 323)

WILLAS
FM120-M+
DTC114TUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Features• Low
power loss, high efficiency.
x
x
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
•
•
x
0.012(0.3) Typ.
.004(0.10)MIN.
•
0.146(3.7)
0.130(3.3)
SOT-323
High current capability, low forward voltage drop.
Pb-Free•package
is available
• High surge capability.
RoHS product
for packing
code suffix
”G”
for overvoltage
protection.
• Guardring
Ultra
high-speed
switching.
•
Halogen free product for packing code suffix “H”
chip, metal
silicon junction.
• Silicon
Epoxy meets
ULepitaxial
94 V-0 planar
flammability
rating
Lead-free parts
Moisure •Sensitivity
Levelmeet
1 environmental standards of
MIL-STD-19500
/228the configuration of an inverter circuit
Built-in bias
resistors enable
RoHS product for packing code suffix "G"
•
without connecting external input resistors (see equivalent circuit)
Halogen free product for packing code suffix "H"
The bias resistors consist of thin-film resistors with complete
Mechanical
isolation to allow negative data
biasing of the input. They also have the
: UL94-V0
rated flame
retardant
• Epoxy
advantage
of almost
completely
eliminating
parasitic effects
Only the •on/off
needSOD-123H
to be set for operation, making
Case conditions
: Molded plastic,
,
device design easy
• Terminals :Plated terminals, solderable per MIL-STD-750
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
Absolute Maximum
• PolarityRatings
: Indicated by cathode band
Dimensions in inches.087(2.20)
and (millimeters)
Value
Unit
50
Collector-Emitter Voltage
VCEO
50
Emitter-Base voltage
VEBO
5
MAXIMUM RATINGS AND ELECTRICAL
Collector Current-Continuous
IC
100
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector Dissipation
PC
200
Single phase half wave, 60Hz, resistive of inductive load.
Junction Temperature
150
J
For capacitive load, derate current byT20%
Storage Temperature Range
RATINGS
TSTG
Sym
Parameter
Maximum RMS Voltage
Collector-Base Breakdown Voltage
V(BR)CBOMaximum DC Blocking Voltage
(IC=50uA, IE=0)
V
V
V
CHARACTERISTICS
mA
.070(1.80)
mW
к
.056(1.40)
к
-55~150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Electrical
Characteristics
Maximum Recurrent Peak Reverse Voltage
.054(1.35)
.045(1.15)
Parameter
Symbol
• Mounting Position : Any
Collector-Base Voltage
VCBO
• Weight : Approximated 0.011
gram
VRRM
Min VRMS
Typ
15
50
.047(1.20)
16
18
60
80
28
35
42
40
50
60
.004(0.10)MAX.
1.0
30
12
20
13
30
14
40
14
20---
21
30V
Max
Unit
10
100
115
150
120
200
56
70
105
140
80
100
150
VDC---
*Marking:
04
.043(1.10)
.032(0.80)
200
Collector-Emitter
Breakdown
Voltage
IO--50
--V
V(BR)CEOMaximum Average Forward Rectified Current
(IC=1mA, IB=0)
Emitter-Base Breakdown Voltage
5
----V
V(BR)EBOPeak Forward Surge Current 8.3 ms single half sine-wave
IFSM
(IE=50uA, IC=0)
.016(0.40)
superimposed on rated load (JEDEC method)
Collector Cut-off Current
----0.5
uA
ICBO
.008(0.20)
=50V, IResistance
=0)
(VCB
40
Typical
Thermal
(Note
2)
R
ΘJA
E
Emitter
Cut-off
Current (Note 1)
120
Typical
Junction
Capacitance
C
J
IEBO
----0.5
uA
(VEB=4V, IC=0)
-55 to +125
-55 to +150
Operating Temperature Range
TJ
DC Current Gain
Dimensions in inches and (millimeters)
100 TSTG
300
600
--hFE Storage Temperature Range
65
to
+175
(VCE=5V, IC=1mA)
Collector-Emitter Saturation Voltage
----0.3
V
VCE(sat)
(IC=10mA, IB=1mA)
Suggested
SolderFM1100-MH FM1150-MH FM1200-MH
FM160-MH FM180-MH
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
R1
Input Resistor
7
10
13
K¡
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70 Pad Layout 0.85
Transition Frequency
250
--MHz
fT Maximum Average Reverse Current at @T A=25℃--0.700.5
(VCE=10V, IE =-5mA, f=100MHz)
IR
10
@T A=125℃
Rated DC Blocking Voltage
50
0.90
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.90 mm
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC114TUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
14
40
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC114TUATHRU
Digital
FM1200-M+
1.0ANPN
SURFACE
MOUNTTransistor
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
Features
Pb Free Product
PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
Device PN Packing high efficiency.
• Low power loss,
0.130(3.3)
(2)
low forward
voltage drop.
• High current capability, (1)
DTC114TUA –T
G
‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximumwhich may be included on WILLAS data sheets and/ or specifications can RMS Voltage
VRMS
V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
use of any product or circuit. superimposed on rated load (JEDEC method)
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
Storage Temperature
Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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