WILLAS FM120-M+ UMD3NTHRU FM1200-M+ Digital transistors (built-in resistors) 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT-363 surface mounted application in order to • Low profile DUAL DIGITAL TRANSISTOR (NPN+PNP) optimize board space. FEATURES • Low power loss, high efficiency. forward voltage drop. • High current z DTA114E and capability, DTC114Elow transistors are built-in a package. High surge capability. • z Transistor elements are independent, eliminating interference. • Guardring for overvoltage protection. z Mounting cost andswitching. area can be cut in half. • Ultra high-speed epitaxial planar chip, metal silicon junction. • Siliconpackage z Pb-Free is available • Lead-free parts meet environmental standards of RoHS product for/228 packing code suffix ”G” MIL-STD-19500 RoHS product for packing suffix "G" • Halogen free product forcode packing code suffix “H” z HalogenSensitivity free product for packing Moisture Level 1 code suffix "H" Mechanical data 0.146(3.7) 0.130(3.3) 1. GND 0.071(1.8) 0.056(1.4) 2. IN 3. OUT 4.GND 5.IN External circuit • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 6.OUT 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. DTr1 R1 0.031(0.8) Typ. R2 Method 2026 DTr2 R2 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram R1 Dimensions in inches and (millimeters) R1=10kΩ R2=10kΩ MARKING:D3MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Absolute maximum ratings (Ta=25℃) For capacitive load, derate current by 20% Parameter RATINGS Symbol Marking Code VRRM 12 20 13 30 14 50 15 40 50 16 60 18 80 10 100 115V 150 120 200 Volt Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volt VDC 20 30 40 50 50 60 80 100 150 200 Volt Supply voltage VCC Input voltage VIN IO Output current * PDhalf Power dissipation Peak Forward Surge Current 8.3 ms single sine-wave superimposed on rated load (JEDEC method) Tj Junction temperature Typical Thermal Resistance (Note 2) Storage temperature 150 Note 1: 150mW per element Operating Temperature Range must not be exceeded.TJ Parameter CHARACTERISTICS Symbol VI(off) 0.5 Input voltage Maximum Average Reverse Current at @T A=25℃ VF VI(on)@T A=125℃ 0.50 PF -55 to +150 0.70 V IR 3 VO(on) ℃ ℃ 2- Output Thermal Resistance Ambient current From Junction ItoO(off) 0.85 0.5 10 VCC=5V ,IO=100µA V IO/II=10mA/0.5mA 0.88 mA VI=5V 0.5 μA VCC=50V, VI=0 GI 30 Input resistance R1 7 10 13 Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT 0.9 0.92 UNI Volt VO=0.3V ,IO=10mA 0.3 DC current gain 2012-1 ℃/W ℃ - 65 to +175 II voltage of 4.0 VDC. Input current 1- Measured at 1 MHZ and applied reverse 2012-06 Am FM140-MH FM150-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH Min. Typ FM130-MH Max. Unit FM160-MH FM180-MH Conditions Maximum Forward Voltage at 1.0A DC Output voltage Am ℃ TSTG Electrical characteristics (Ta=25℃) NOTES: -55 to +125 mA 40 120 -55~150 V mW 150 CJ Storage Temperature Range 1.0 30 100 RΘJA Tstg Typical Junction Capacitance (Note 1) Rated DC Blocking Voltage -10~40 IO IFSM Maximum Average Forward RectifiedIC(MAX) Current Unit Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Limit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN mAm VO=5V,IO=5mA 250 kΩ MHz VCE=10V ,IE=-5mA,f=100MHz R1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ UMD3NTHRU FM1200-M+ Digital transistors (built-in resistors) 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features ON Characteristics Batch process design, excellent power dissipation offers •-100 OFF Characteristics -10 VO=-0.3V better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. -3 (mA) a a -1 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. -1 IO OUTPUT CURRENT INPUT VOLTAGE VI(ON) (V) -30 • Low power loss, high efficiency. • High current capability, low forward voltage drop. -10 • High surge capability. • Guardring for overvoltage protection. high-speed switching. • Ultra T =25℃ -3 • Silicon epitaxial planar chip, metal silicon junction. T =100℃ of • Lead-free parts meet environmental standards • Pb Free Product DTA114E Typical Characteristics Package outline MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ta=100℃ -0.3 0.071(1.8) 0.056(1.4) Ta=25℃ -0.1 -0.03 -0.3 Mechanical data Epoxy : UL94-V0 rated flame retardant • -0.1 -30 -0.3 -3 -0.1 -1 -10 -100 • Case : Molded plastic, SOD-123H OUTPUT CURRENT I (mA) , • Terminals :Plated terminals, solderable per MIL-STD-750 -0.01 -0.0 0.040(1.0) VCC=-5V 0.024(0.6) -0.4 0.031(0.8) Typ. O -0.8 -1.2 INPUT VOLTAGE VI(OFF) -1.6 -2.0 0.031(0.8) Typ. (V) Method 2026 • Polarity : Indicated by cathode band GI —— IO Mounting Position : Any •1000 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) VO(ON) —— -1000 VO=-5V IO IO/II=20 300 (mV) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -300 RATINGS 10 VRRM Maximum RMS Voltage VRMS 14 21 3 Blocking Voltage Maximum DC VDC 20 30 Maximum Average Forward Rectified Current IO -30 IFSM Peak 1 -0.1 Forward Surge -0.3 -3 -1 single half -10 Current 8.3 ms sine-wave OUTPUT CURRENT superimposed on rated load (JEDEC method) IO (mA) Typical Junction Capacitance (Note 1) CO —— Operating Temperature Range 12 Storage Temperature Range 18 80 10 100 115 150 120 200 Volt -30 28 35 42 56 70 105 140 Volt 40 50 60 80 100 150 200 Volt -1 -3 1.0 -10 30 OUTPUT CURRENT -55 to +125 200 40 120 PD —— - 65 to +175 Amp -100 -30 IO Amp (mA) ℃/W PF Ta -55 to +150 ℃ ℃ Ta=25℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI (pF) CO OUTPUT CAPACITANCE NOTES: IR @T A=125℃ Rated DC Blocking Voltage (mW) VF Maximum Average Reverse Current at @T A=25℃ 8 6 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 4 0.70 0.9 0.85 0.92 0.5 Volt mAm 10 100 50 2 0 -0 2012-06 2012-1 0.50 150 PD 10 Maximum Forward Voltage at 1.0A DC 16 60 -10 TSTG f=1MHz 15 50 TJ Ta=25℃ 14 40 CJ VR 13 30 -100 RΘJA Typical Thermal Resistance (Note 2) VO(ON) Maximum Recurrent Peak Reverse Voltage 12 20 Ta=100℃ -100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Ta=25℃ Marking Code OUTPUT VOLTAGE a 30 POWER DISSIPATION DC CURRENT GAIN GI Ratings at 25℃ ambient temperature unless otherwise specified. 100 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by T =100 ℃ 20% -4 -8 -12 REVERSE BIAS VOLTAGE -16 VR (V) -20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU UMD3N FM1200-M+ Digital transistors (built-in resistors) 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features Pb Free Product DTC114E Typical CharacteristicsPackage outline power dissipation offers • Batch process design, ONexcellent Characteristics OFF Characteristics SOD-123H 10 100 better reverse leakage current and thermal resistance. V =0.3V • Low profile surface mounted application in orderOto optimize board space. 30 power loss, high efficiency. • Low • High current capability, low forward voltage drop. surge capability. • High 10 • Guardring for overvoltage protection. • Ultra high-speed switching. Ta=25℃ 3 epitaxial planar chip, • Silicon 100℃ metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 1 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" VCC=5V Ta=100℃ 25℃ 0.146(3.7) 3 0.012(0.3) Typ. 1 INPUT VOLTAGE OUTPUT CURRENT IO VI(ON) (V) (mA) 0.130(3.3) 0.3 Mechanical data 0.071(1.8) 0.056(1.4) 0.3 0.1 0.03 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0.1 plastic, • Case 0.1 : Molded 1 SOD-123H 10 100 3 30 0.3 , OUTPUT CURRENT I (mA)per MIL-STD-750 • Terminals :Plated terminals, solderable 0.01 0.0 0.031(0.8) Typ. 0.4 O 0.8 1.2 INPUT VOLTAGE VI(OFF) 1.6 0.031(0.8) Typ.2.0 (V) Method 2026 • Polarity : Indicated by cathode band V —— IO Position : AnyO(ON) • Mounting 1 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) GI 1000 IO/II=20 Ta=100℃ Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of Tinductive load. =100℃ a 25℃ For capacitive load, derate current by 20% 0.1 RATINGS GI 100 DC CURRENT GAIN (V) VO(ON) OUTPUT VOLTAGE 25℃ 0.3 30 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 0.03 IO 0.01 Peak Forward Surge Current 8.3 ms single half sine-wave 30 3 1 10 IFSM 1040 14 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 3 Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) OUTPUT CURRENT IO (mA) Typical Thermal Resistance (Note 2) Operating Temperature Range 10 Storage Temperature Range CO —— TSTG CHARACTERISTICS -55 to +125 4 2- Thermal Resistance From Junction to Ambient 2 0 0 2012-06 2012-1 4 8 12 REVERSE BIAS VOLTAGE 16 VR 0.70 150 ℃/W PF -55 to +150 Ta ℃ ℃ (V) 20 0.9 0.85 0.92 0.5 Volts mAmp 10 PD POWER DISSIPATION (pF) 0.50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Amp 100 30 (mA) PD —— - 65 to +175 f=1MHz Ta=25℃ 10 IO 200 IR @T A=125℃ CO NOTES: OUTPUT CAPACITANCE 3 40 120 VF Maximum Average Reverse Current at @T A=25℃ 6 Amp SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 8 Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 1 RΘJA TJ VR 0.3 1.0 30 OUTPUT CURRENT CJ Typical Junction Capacitance (Note 1) 1 0.1 100 (mW) IO VO=5V 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS —— 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ UMD3NTHRU FM1200-M+ Digital transistors (built-in resistors) 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-363 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .004(0.10)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .087(2.20) • Epoxy : UL94-V0 rated flame retardant .071(1.80) .054(1.35) .045(1.15) Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .071(1.80) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .030(0.75) RATINGS.021(0.55) Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage .056(1.40) .047(1.20) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VRRM .004(0.10)MAX. 13 30 14 40 15 50 16 60 80 100 115 150 120 200 Volt VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 Volt IO IFSM Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 12 20 Volt RΘJA Typical Thermal Resistance (Note 2) .010(0.25) .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI 1.0 30 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI VF .016(0.40) IR @T A=125℃ .004(0.10) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: .043(1.10) .032(0.80) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.9 0.5 0.92 Volt mAm 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ UMD3N THRU FM1200-M+ Digital transistors (built-in resistors) 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. efficiency. • Low power loss, high Device PN Packing 0.146(3.7) 0.130(3.3) voltage drop. • High current capability, low (1) forward (2) G ‐WS Tape&Reel: 3Kpcs/Reel capability. • High surgeUMD3N ‐T Guardring for overvoltage protection. •Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS for any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Amps Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposeduse of any product or circuit. on rated load (JEDEC method) ℃/W 40 Typical Thermal RΘJA Resistance (Note 2) PF 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ Marking Code - 65 to +175 TSTG ℃ life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured atInc and its subsidiaries harmless against all claims, damages and expenditures 1 MHZ and applied reverse voltage of 4.0 VDC. . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.