WILLAS FM120-M+ 2SA1037AKxLT1THRU FM1200-M+ 1.0A SURFACE Purpose MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H profile surface mounted application in order to • LowSilicon PNP optimize board space. Featrues • Low power loss, high efficiency. We declare the material of product compliance z currentthat capability, low forward voltage drop. with RoHS requirements. • High Pb-Free package is available • High surge capability. RoHS product for packing code suffix ”G” for overvoltage protection. • Guardring high-speed switching. • Ultra Halogen free product for packing code suffix “H” epitaxial planar chip, • Silicon Moisture Sensitivity Level 1 metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) ORDERING INFORMATION MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Shipping Devicefree product for packing Package Halogen code suffix "H" Mechanical 2SA1037AKXLT1 dataSOT-23 SOT– 23 3000/Tape & Reel • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H Rating Symbol Value Unit , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) MAXIMUM RATINGS Collector–Emitter Voltage Method 2026 V C CollectorMAXIMUM power dissipation C RATINGSPAND –50 V 1 –60 V BASE Dimensions in inches and (millimeters) –6.0 V –150 mAdc CEO •Collector–Base Polarity : Indicated by cathodeVband Voltage CBO Mounting Position •Emitter–Base Voltage: Any V EBO •Collector Weight : Approximated 0.011 gram Current — Continuous I 3 0.031(0.8) Typ. COLLECTOR 0.031(0.8) Typ. 2 EMITTER 0.2 WCHARACTERISTICS ELECTRICAL Ratings Junction at 25℃ temperature ambient temperature unless specified. °C T jotherwise150 Single phase half wave, 60Hz, resistive of inductive load. -55 ~+150 °C Storage temperature T stg For capacitive load, derate current by 20% DEVICE MARKING RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code 2SA1037AKQLT1 =FQ 2SA1037AKSLT1 =G3F 2SA1037AKRLT1 =FR 12 13 14 20 30 40 Maximum Recurrent Peak Reverse Voltage VRRM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) 14 21 28 Maximum RMS Voltage VRMS Characteristic Symbol Min Maximum DC Blocking Voltage 20 30 40 VDC 15 50 16 60 18 80 10 100 115 150 120 200 Vo 35 50Typ 42 60Max 56 Unit 80 70 105 140 Vo 100 150 200 Vo IO 1.0 – 50 — — V V (BR)CEO (IC = –1 mA) Peak Forward Surge Current 8.3 ms single half sine-wave Emitter–Base Breakdown Voltage 30 IFSM V (BR)EBO –6 — — V superimposed load (JEDEC method) 50 µA) (IE =on– rated 40 Typical Thermal Resistance (Note 2) Voltage RΘJA Collector–Base Breakdown V (BR)CBO – 60 — — V 120 Typical Junction Capacitance (Note 1) C J (IC = – 50 µA) -55 to +125 -55 to +150 OperatingCollector Temperature Range TJ Cutoff Current I CBO — — – 0.1 µA 65 to +175 Storage Temperature Range TSTG (VCB = – 60 V) Emitter cutoff current I EBO — — – 0.1 µA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH V) (VEB = – 6CHARACTERISTICS 0.9 Maximum Collector-emitter Forward Voltage at 1.0A DC voltage 0.92 VF 0.50 0.70 0.85 saturation V CE(sat) — — -0.5 V 0.5 Maximum(IAverage Reverse Current at @T A=25℃ C/ IB = – 50 mA / – 5m A) IR 10 @T A=125℃ Rated DCDC Blocking Voltage current transfer ratio h FE 120 –– 560 –– (V CE = – 6 V, I C= –1mA) NOTES: Transition frequency fT — 140 –– MHz 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. (V CE = – 12 V, I E= 2mA, f=30MHz ) 2- Thermal Resistance From Junction to Ambient Output capacitance C ob — 4.0 5.0 pF (V CB = – 12 V, I E= 0A, f =1MHz ) Breakdown Voltage MaximumCollector–Emitter Average Forward Rectified Current A A ℃ P ℃ ℃ U V mA h FE values are classified as follows: * hFE 2012-06 2012- Q 120~270 R 180~390 S 270~560 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1037AKxLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Fig.1 Grounded emitterexcellent propagation characteristics process design, power dissipation offers • Batch better reverse leakage current and thermal resistance. –50 profile surface mounted application in order to • Low VCE= –10 V optimize T A board = 100°Cspace. 25°C high efficiency. –20 power loss, • Low – 40°C current capability, low forward voltage drop. • High –10 • High surge capability. –50 for overvoltage protection. • Guardring • Ultra high-speed switching. –2 • Silicon epitaxial planar chip, metal silicon junction. –1 parts meet environmental standards of • Lead-free MIL-STD-19500 /228 –0.5 product for packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" Fig.2 Grounded emitter output characteristics( ) SOD-123H I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) –10 –35.0 T A = 25°C –31.5 0.146(3.7) 0.130(3.3) –8 –28.0 0.012(0.3) Typ. –24.5 –21.0 –6 0.071(1.8) –17.5 0.056(1.4) –14.0 –4 –10.5 –7.0 –2 –3.5µA –0.2 Mechanical data –0.1 0 rated–0.8 flame–1.0 retardant • Epoxy–0.2: UL94-V0 –0.4 –0.6 –1.2 –1.4 –1.6 plastic, SOD-123H • Case : Molded TO EMITTER VOLTAGE(V) V BE , BASE , • Terminals :Plated terminals, solderable per MIL-STD-750 0 Method 2026 Dimensions in inches and (millimeters) RATINGS AND ELECTRICAL CHARACTERISTICS 200 –250 Ratings at–60 25℃ ambient temperature unless otherwise specified. –200 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% –150 –40 RATINGS VRRM 12 20 –50 µA VRMS I B =0 14 0 –1 Maximum DC Blocking Voltage 100 SYMBOL –100 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum RMS Voltage 0 –2 20–5 –4 VDC –3 13 30 14 40 50 21 28 30 –0.240 V CE , COLLECTOR TO EMITTER VOLTAGE (V) IO IFSM Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating500 Temperature RangeT = 100°C A Storage Temperature Range 25°C TJ IR @T A=125℃ 100 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 50 2- Thermal Resistance From Junction to Ambient VCE= – 6V –0.5 –1 –2 –5 –10 –20 I C, COLLECTOR CURRENT (mA) 2012-06 2012- –5 120 200 Vo 105 140 Vo –100 150 200 Vo 70 –10 80 –20 100 –50 Am Am ℃ collector 40 current ( ) 120 –1 -55 to +125 VF Maximum Average Reverse Current at @T A=25℃ –0.2 56 –2 60 115 150 P -55 to +150 T A = 25°C ℃ - 65 to +175 ℃ –0.5 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum 200 Forward Voltage at 1.0A DC Rated DC Blocking Voltage 42 10 100 Fig.6 Collector-emitter saturation voltage vs. TSTG CHARACTERISTICS –40°C 35 50–1 –0.5 18 80 30 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) CJ h FE, DC CURRENT GAIN Typical Junction Capacitance (Note 1) 16 60 RΘJA Typical Thermal Resistance (Note 2) 15 50 CURRENT (mA) I C, COLLECTOR1.0 Fig.5 DC current gain vs. collector current ( ) VCE= –5 V –3V –1V T A = 25°C Maximum Recurrent Peak Reverse Voltage 0.031(0.8) Typ. 500 Marking Code –20 –1.6 Fig.4 DC current gain vs. collector current ( ) h FE, DC CURRENT GAIN I C, COLLECTOR CURRENT (mA) –1.2 0.031(0.8) Typ. • Polarity : Indicated by cathode band –100 T A = Position 25°C : Any • Mounting • Weight : 500 Approximated 0.011 gram 450 400 350 MAXIMUM 300 –0.8 V CE , COLLECTOR TO EMITTER VOLTAGE (V) Fig.3 Grounded emitter output characteristics( ) –80 –0.4 I B =0 0.040(1.0) 0.024(0.6) –2.0 –50 –100 0.50 0.70 0.9 0.85 0.5 –0.2 0.92 Vo mA I C /I B = 50 10 20 –0.1 10 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1037AKxLT1THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Fig.7 Collector-emitter saturation voltage vs. Fig.8 Gain bandwidth product vs. emitter current 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 –0.2 product for packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" T A = 100°C Mechanical data 25°C –0.1 –40°C • Epoxy : UL94-V0 rated flame retardant Case : Molded plastic, SOD-123H • –0.05 , • Terminals :Plated terminals, solderable per MIL-STD-750 Method –1 2026 –2 –0.2 –0.5 –5 –10 –20 –50 0.012(0.3) Typ. 1000 f r , TRANSITION FREQUENCY(MHz) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) • Low power loss, high efficiency. collector current ( ) low forward voltage drop. • High current capability, –1 surge capability. • High I C /I B = 10 • Guardring for overvoltage protection. high-speed switching. • Ultra –0.5 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of T A = 25°C V CE = –12V 0.071(1.8) 0.056(1.4) 500 200 100 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. 50 –0.2 –100 • Polarity : Indicated by cathode band (mA) I C, COLLECTOR CURRENT • Mounting Position : Any • Weight : Approximated 0.011 gram –0.5 –1 –2 –5 –10 –20 –50 –100 in inches and (millimeters) I E, Dimensions EMITTER CURRENT (mA) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. 20 T A = 25°C Single phase half wave, 60Hz, resistive of inductive load. f =1MHz C ib I E = 0A For capacitive load, derate current by 20% 10 I C = 0A SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 5 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vo Maximum Average Forward Rectified Current 2 IO IFSM C ob Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) –0.5 –1 Typical Thermal Resistance (Note 2) –2 –5 RΘJA–10 Typical Junction Capacitance (Note 1) CJ V , COLLECTOR TO BASE VOLTAGE (V) CB Operating Temperature RangeV EB, EMITTER TO BASE VOLTAGE TJ (V) Storage Temperature Range 1.0 30 –20 40 120 -55 to +125 A A ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1037AKxLT1THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of optimize board space. 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.012(0.3) Typ. .122(3.10) Halogen free product for packing code suffix "H" .106(2.70) .063(1.60) .047(1.20) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .083(2.10) 0.031(0.8) Typ. .110(2.80) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .080(2.04) RATINGS .070(1.78) Marking Code .008(0.20) .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vo Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .004(0.10)MAX. RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at Rated DC Blocking Voltage 1.0 30 40 120 -55 to +125 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% A A ℃ P -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN .020(0.50) V @T A=25℃ I .012(0.30) @T A=125℃ F R 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Dimensions in inches and (millimeters) 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1037AKxLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (2) (1) Tape&Reel: 3 Kpcs/Reel surge capability. LT1 G ‐WS • High2SA1037AK x Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon (2) CLASSIFICATION OF h FE RANK epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum which may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS and do vary in different applications and actual performance may vary over time. Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Am Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating life‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vo 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mA 10 @T A=125℃ Rated DC such applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.