2SA1037AKxLT1(SOT 23)

WILLAS
FM120-M+
2SA1037AKxLT1THRU
FM1200-M+
1.0A SURFACE Purpose
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
General
Transistors
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
profile surface mounted application in order to
• LowSilicon
PNP
optimize board space.
Featrues
• Low power loss, high efficiency.
We declare
the material
of product
compliance
z
currentthat
capability,
low forward
voltage
drop. with RoHS requirements.
• High
Pb-Free
package
is
available
• High surge capability.
RoHS product
for packing
code suffix ”G”
for overvoltage
protection.
• Guardring
high-speed
switching.
• Ultra
Halogen free product for packing code suffix “H”
epitaxial
planar
chip,
• Silicon
Moisture
Sensitivity
Level
1 metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
ORDERING
INFORMATION
MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
Shipping
Devicefree product for packing
Package
Halogen
code suffix "H"
Mechanical
2SA1037AKXLT1 dataSOT-23
SOT– 23
3000/Tape & Reel
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
Rating
Symbol
Value
Unit ,
• Terminals
:Plated terminals, solderable
per
MIL-STD-750
0.040(1.0)
0.024(0.6)
MAXIMUM RATINGS
Collector–Emitter
Voltage
Method
2026
V
C
CollectorMAXIMUM
power dissipation
C
RATINGSPAND
–50
V
1
–60
V
BASE
Dimensions in inches
and (millimeters)
–6.0
V
–150
mAdc
CEO
•Collector–Base
Polarity : Indicated
by cathodeVband
Voltage
CBO
Mounting Position
•Emitter–Base
Voltage: Any
V EBO
•Collector
Weight : Approximated 0.011 gram
Current — Continuous
I
3
0.031(0.8) Typ.
COLLECTOR
0.031(0.8) Typ.
2
EMITTER
0.2
WCHARACTERISTICS
ELECTRICAL
Ratings Junction
at 25℃ temperature
ambient temperature unless
specified. °C
T jotherwise150
Single phase half wave, 60Hz, resistive of inductive load.
-55 ~+150
°C
Storage temperature
T stg
For capacitive load, derate current by 20%
DEVICE MARKING
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
2SA1037AKQLT1 =FQ
2SA1037AKSLT1 =G3F
2SA1037AKRLT1
=FR
12
13
14
20
30
40
Maximum Recurrent Peak Reverse Voltage
VRRM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
14
21
28
Maximum RMS Voltage
VRMS
Characteristic
Symbol
Min
Maximum DC Blocking Voltage
20
30
40
VDC
15
50
16
60
18
80
10
100
115
150
120
200
Vo
35
50Typ
42
60Max
56
Unit
80
70
105
140
Vo
100
150
200
Vo
IO
1.0
– 50
—
—
V
V (BR)CEO
(IC = –1 mA)
Peak Forward
Surge Current
8.3 ms single
half sine-wave
Emitter–Base
Breakdown
Voltage
30
IFSM
V (BR)EBO
–6
—
—
V
superimposed
load (JEDEC method)
50 µA)
(IE =on– rated
40
Typical Thermal
Resistance
(Note 2) Voltage
RΘJA
Collector–Base Breakdown
V (BR)CBO
– 60
—
—
V
120
Typical Junction
Capacitance
(Note
1)
C
J
(IC = – 50 µA)
-55 to +125
-55 to +150
OperatingCollector
Temperature
Range
TJ
Cutoff
Current
I CBO
—
—
– 0.1
µA
65
to
+175
Storage Temperature
Range
TSTG
(VCB = – 60 V)
Emitter cutoff current
I EBO
—
—
– 0.1
µA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V)
(VEB = – 6CHARACTERISTICS
0.9
Maximum Collector-emitter
Forward Voltage at
1.0A DC voltage
0.92
VF
0.50
0.70
0.85
saturation
V CE(sat)
—
—
-0.5
V
0.5
Maximum(IAverage
Reverse
Current
at
@T
A=25℃
C/ IB = – 50 mA / – 5m A)
IR
10
@T A=125℃
Rated DCDC
Blocking
Voltage
current
transfer ratio
h FE
120
––
560
––
(V CE = – 6 V, I C= –1mA)
NOTES:
Transition frequency
fT
—
140
––
MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
(V CE = – 12 V, I E= 2mA, f=30MHz )
2- Thermal Resistance From Junction to Ambient
Output capacitance
C ob
—
4.0
5.0
pF
(V CB = – 12 V, I E= 0A, f =1MHz )
Breakdown
Voltage
MaximumCollector–Emitter
Average Forward Rectified
Current
A
A
℃
P
℃
℃
U
V
mA
h FE values are classified as follows:
*
hFE
2012-06
2012-
Q
120~270
R
180~390
S
270~560
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1037AKxLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
Fig.1
Grounded
emitterexcellent
propagation
characteristics
process design,
power
dissipation offers
• Batch
better reverse leakage current and thermal resistance.
–50 profile surface mounted application in order to
• Low
VCE= –10 V
optimize
T A board
= 100°Cspace.
25°C high efficiency.
–20 power loss,
• Low
– 40°C
current
capability, low forward voltage drop.
• High
–10
• High surge capability.
–50
for overvoltage protection.
• Guardring
• Ultra high-speed switching.
–2
• Silicon epitaxial planar chip, metal silicon junction.
–1
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
–0.5
product for packing code suffix "G"
• RoHS
Halogen free product for packing code suffix "H"
Fig.2 Grounded emitter output characteristics( )
SOD-123H
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
–10
–35.0
T A = 25°C
–31.5
0.146(3.7)
0.130(3.3)
–8
–28.0
0.012(0.3) Typ.
–24.5
–21.0
–6
0.071(1.8)
–17.5
0.056(1.4)
–14.0
–4
–10.5
–7.0
–2
–3.5µA
–0.2
Mechanical
data
–0.1
0
rated–0.8
flame–1.0
retardant
• Epoxy–0.2: UL94-V0
–0.4
–0.6
–1.2
–1.4
–1.6
plastic,
SOD-123H
• Case : Molded
TO EMITTER
VOLTAGE(V)
V BE , BASE
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0
Method 2026
Dimensions in inches and (millimeters)
RATINGS AND ELECTRICAL CHARACTERISTICS
200
–250
Ratings at–60
25℃ ambient temperature unless otherwise specified.
–200
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load,
derate
current
by
20%
–150
–40
RATINGS
VRRM
12
20
–50 µA
VRMS I B =0 14
0
–1
Maximum DC Blocking
Voltage
100
SYMBOL
–100 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum RMS
Voltage
0
–2
20–5
–4
VDC
–3
13
30
14
40
50
21
28
30
–0.240
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
IO
IFSM
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating500
Temperature RangeT = 100°C
A
Storage Temperature Range
25°C
TJ
IR
@T A=125℃
100
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
50
2- Thermal Resistance
From Junction to Ambient
VCE= – 6V
–0.5
–1
–2
–5
–10
–20
I C, COLLECTOR CURRENT (mA)
2012-06
2012-
–5
120
200
Vo
105
140
Vo
–100
150
200
Vo
70
–10
80
–20 100 –50
Am
Am
℃
collector 40
current ( )
120
–1
-55 to +125
VF
Maximum Average Reverse Current at @T A=25℃
–0.2
56
–2 60
115
150
P
-55 to +150
T A = 25°C
℃
- 65 to +175
℃
–0.5
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum 200
Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
42
10
100
Fig.6 Collector-emitter saturation voltage vs.
TSTG
CHARACTERISTICS
–40°C
35
50–1
–0.5
18
80
30
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
CJ
h FE, DC CURRENT GAIN
Typical Junction Capacitance (Note 1)
16
60
RΘJA
Typical Thermal Resistance (Note 2)
15
50
CURRENT (mA)
I C, COLLECTOR1.0
Fig.5 DC current gain vs. collector current ( )
VCE= –5 V
–3V
–1V
T A = 25°C
Maximum Recurrent Peak Reverse Voltage
0.031(0.8) Typ.
500
Marking Code
–20
–1.6
Fig.4 DC current gain vs. collector current ( )
h FE, DC CURRENT GAIN
I C, COLLECTOR CURRENT (mA)
–1.2
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
–100
T A = Position
25°C
: Any
• Mounting
• Weight : 500
Approximated 0.011 gram
450
400
350
MAXIMUM
300
–0.8
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Fig.3 Grounded emitter output characteristics( )
–80
–0.4
I B =0
0.040(1.0)
0.024(0.6)
–2.0
–50
–100
0.50
0.70
0.9
0.85
0.5
–0.2
0.92
Vo
mA
I C /I B = 50
10
20
–0.1
10
–0.05
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I C, COLLECTOR CURRENT (mA)
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1037AKxLT1THRU
General
Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
board space.
Fig.7 Collector-emitter
saturation voltage vs.
Fig.8 Gain bandwidth product
vs. emitter current
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
–0.2
product for packing code suffix "G"
• RoHS
Halogen free product for packing code suffix "H"
T A = 100°C
Mechanical
data
25°C
–0.1
–40°C
• Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
• –0.05
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method
–1 2026
–2
–0.2
–0.5
–5
–10
–20
–50
0.012(0.3) Typ.
1000
f r , TRANSITION FREQUENCY(MHz)
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
• Low power loss, high efficiency.
collector current ( )
low forward voltage drop.
• High current capability,
–1
surge capability.
• High
I C /I B = 10
• Guardring for overvoltage protection.
high-speed switching.
• Ultra
–0.5
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
T A = 25°C
V CE = –12V
0.071(1.8)
0.056(1.4)
500
200
100
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
50
–0.2
–100
• Polarity : Indicated
by cathode
band (mA)
I C, COLLECTOR
CURRENT
• Mounting Position : Any
• Weight : Approximated 0.011 gram
–0.5
–1
–2
–5
–10
–20
–50
–100
in inches and
(millimeters)
I E, Dimensions
EMITTER CURRENT
(mA)
C ob , COLLECTOR OUTPUT CAPACITANCE( pF)
C ib , EMITTER INPUT CAPACITANCE (pF)
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter
inputcapacitance
vs. emitter-base
voltage
MAXIMUM
RATINGS AND
ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient
temperature unless otherwise specified.
20
T A = 25°C
Single phase half wave, 60Hz, resistive of inductive load.
f =1MHz
C ib
I E = 0A
For capacitive load, derate current by 20%
10
I C = 0A
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
5
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vo
Maximum Average Forward
Rectified Current
2
IO
IFSM
C ob
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
–0.5
–1
Typical Thermal Resistance (Note
2)
–2
–5
RΘJA–10
Typical Junction Capacitance (Note
1)
CJ
V , COLLECTOR
TO BASE VOLTAGE
(V)
CB
Operating Temperature RangeV EB, EMITTER TO BASE VOLTAGE
TJ
(V)
Storage Temperature Range
1.0
30
–20
40
120
-55 to +125
A
A
℃
P
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1037AKxLT1THRU
General
Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-23
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
optimize board space.
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
0.012(0.3) Typ.
.122(3.10)
Halogen free product for packing code suffix
"H"
.106(2.70)
.063(1.60)
.047(1.20)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Mechanical data
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.083(2.10)
0.031(0.8) Typ.
.110(2.80)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.080(2.04)
RATINGS
.070(1.78)
Marking Code
.008(0.20)
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vo
Maximum Average Forward Rectified Current
IO
IFSM
Maximum Recurrent Peak Reverse Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.004(0.10)MAX.
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
1.0
30
40
120
-55 to +125
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
A
A
℃
P
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
.020(0.50)
V
@T A=25℃
I
.012(0.30)
@T A=125℃
F
R
0.50
0.70
0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Dimensions in inches and (millimeters)
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1037AKxLT1
THRU
General
Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
Pb Free Product
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
low
forward
voltage
drop.
• High current capability,
(2)
(1)
Tape&Reel: 3 Kpcs/Reel surge capability. LT1 G ‐WS • High2SA1037AK x
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon
(2) CLASSIFICATION OF h
FE RANK epitaxial planar chip, metal
silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated
by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum which may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
and do vary in different applications and actual performance may vary over time. Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Am
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
on rated load (JEDEC method)
superimposed
℃
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, P
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating life‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Vo
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mA
10
@T A=125℃
Rated DC such applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage
NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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