WILLAS FM120-M+ BAS16TW1T1 THRU FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SWITCHING DIODES better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. FEATURES • Low power loss, high efficiency. z Fast Switching Speed low forward voltage drop. current capability, • High High surge capability. • z For General Purpose Switching Applications • Guardring for overvoltage protection. z High Conductance high-speed switching. • Ultra z z z SOD-123H SOT-363 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Weight:0.05g • Silicon epitaxial planar chip, metal silicon junction. parts environmental standards • Lead-free RoHS product formeet packing code suffix "G" of MIL-STD-19500 /228 Halogen free product forcode packing code suffix "H" for packing suffix "G" • RoHS product Moisture Level 1 code suffix "H" HalogenSensitivity free product for packing Mechanical data MARKING: BAS16TW1T1: KA2· 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant : Molded@T plastic, SOD-123H • Case Maximum Ratings A=25℃ , • Terminals :Plated terminals, solderable per MIL-STD-750 Parameter Method 2026 0.031(0.8) Typ. Symbol Limits • Polarity Peak : Indicated by cathode Non-Repetitive reverse voltageband VRM 100 Position : Any voltage • MountingPeak Peak Repetitive reverse • Weight : Approximated 0.011 gram Working Peak Reverse Voltage VRRM VRWM 0.031(0.8) Typ. Unit Dimensions in inches and (millimeters) V 75 V VR DC Blocking MAXIMUM Voltage RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ Voltage ambient temperature unless otherwiseVspecified. RMS Reverse R(RMS) Single phase half wave, 60Hz, resistive of inductive load. IFM Forward Continuous Current For capacitive load, derate current by 20% IO Average Rectified Output Current RATINGS 300 mA 150 mA Maximum Recurrent Peak Reverse Voltage @=1.0s IFSM VRRM 12 20 13 30 2.0 14 40 1.0 15 50 16 60 18 80 10 A 100 115 150 120 200 Vo MaximumDissipation RMS Voltage Power VRMSPd 14 21 35 42 56 140 Vol 30 50 60 80 70 mW 105 20 28 200 150 200 Vol Maximum DC Blocking Voltage VDCR Thermal Resistance Junction to Ambient θJA Maximum Average Forward Rectified Current Junction temperature Peak Forward Surge Current 8.3 ms single half sine-wave 2SHUDWLQJStorage temperature superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Electrical Ratings @T A=25℃ Typical Junction Capacitance (Note 1) Storage Temperature Range CJ V (BR) R CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Forward voltage Maximum Average Reverse Current at @T A=25℃ @T A=125℃ NOTES: 2- Thermal Resistance From Junction to Ambient Reverse Recovery Time 2012-06 2012-1 625 1.0 30 -55~+150 75 Unit V Am ℃ ℃ Am 40 120 +125 Max. Min. -55 to Typ. 100 K/W ℃/ - 65 to +175 PF -55 to +150 Conditions ℃ IR=10μA ℃ VF1 0.715FM150-MH V FM160-MH FM180-MH IF=1mA FM120-MH FM130-MH FM140-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL VF VF2 0.50 0.855 0.70 V 0.5 I0.85 F=10mA VF3IR 1.0 V VF4 1.25 V IR1 1 μA VR=75V IR2 25 nA VR=20V CT 2 pF VR=0V,f=1MHz trr 4 ns 1Measuredcurrent at 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse Capacitance between terminals 40 150 RΘJA TSTG Reverse Breakdown Voltage Rated DC Blocking Voltage IO Tj T IFSM STG TJ Symbol Operating Temperature Range Parameter V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Peak surge current @=1.0μs Markingforward Code 53 10 IF=50mA 0.9 0.92 Vo mA IF=150mA IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS16TW1T1 FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Typical • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Characteristics 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vol Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vol Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vol Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vol 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS16TW1T1 FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-363 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .004(0.10)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .087(2.20) .054(1.35) .045(1.15) • Epoxy : UL94-V0 rated flame retardant .071(1.80) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .096(2.45) .071(1.80) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code .030(0.75) .021(0.55) .010(0.25) 18 10 .003(0.08) 80 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 42 56 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 .056(1.40) Maximum Average Forward Rectified Current .047(1.20) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 0.012(0.3) Typ. 115 150 120 200 Volt 70 105 140 Volt 100 150 200 Volt 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .004(0.10) @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .043(1.10) .032(0.80) VF Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.5 0.9 0.92 Volt 10 mAm 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.D CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS16TW1T1 FM1200-M+ SOT-363 Plastic-Encapsulate Diodes -20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Pb Free Product SOD-123+ PACKAGE Package outline Features Ordering dissipation offers design, excellent power • Batch processInformation: better reverse leakage current and thermal resistance. Device PN (1) optimizeBAS16TW1T1 G board space. ‐WS Packing SOD-123H Tape&Reel: 3 Kpcs/Reel • Low profile surface mounted application in order to 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Note: (1) Ro HS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per***Disclaimer*** MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings atcontained are intended to provide a product description only. "Typical" parameters 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. which may be included on WILLAS data sheets and/ or specifications can For capacitive load, derate current by 20% and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI RATINGS WILLAS does not assume any liability arising out of the application or Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volt VRRM use of any product or circuit. Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Blocking Voltage Volts Maximum DC 20 30 40 50 60 80 100 150 200 VDC Amp Maximum Average Forward Rectified Current IO 1.0 WILLAS products are not designed, intended or authorized for use in medical, Peak Forward Surge Current 8.3 ms single half sine-wave life‐saving implant or other applications intended for life‐sustaining or other related 30 IFSM Amp superimposed on rated load (JEDEC method) applications where a failure or malfunction of component or circuitry may directly ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF or indirectly cause injury or threaten a life without expressed written approval 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 TJ of WILLAS. Customers using or selling WILLAS components for use in - 65 to +175 TSTG such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Inc and its subsidiaries harmless against all claims, damages and expenditures . 0.9 Maximum Forward Voltage at 1.0A DC 0.92 Operating Temperature Range Storage Temperature Range VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: @T A=125℃ IR 0.50 0.70 0.85 0.5 ℃ ℃ UNIT Volt 10 mAm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.