BAS16TW1T1(SOT 363)

WILLAS
FM120-M+
BAS16TW1T1
THRU
FM1200-M+
SOT-363
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
SWITCHING
DIODES
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
FEATURES
• Low power loss, high efficiency.
z
Fast
Switching
Speed low forward voltage drop.
current capability,
• High
High
surge
capability.
•
z
For General Purpose Switching Applications
• Guardring for overvoltage protection.
z
High
Conductance
high-speed switching.
• Ultra
z
z
z
SOD-123H
SOT-363
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Weight:0.05g
• Silicon epitaxial planar chip, metal silicon junction.
parts
environmental
standards
• Lead-free
RoHS
product
formeet
packing
code suffix
"G" of
MIL-STD-19500 /228
Halogen
free product
forcode
packing
code suffix "H"
for packing
suffix "G"
• RoHS product
Moisture
Level
1 code suffix "H"
HalogenSensitivity
free product for
packing
Mechanical data
MARKING: BAS16TW1T1: KA2·
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
: [email protected]
plastic,
SOD-123H
• Case
Maximum
Ratings
A=25℃
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
Method 2026
0.031(0.8) Typ.
Symbol
Limits
• Polarity Peak
: Indicated
by cathode
Non-Repetitive
reverse
voltageband
VRM
100
Position
: Any voltage
• MountingPeak
Peak Repetitive
reverse
• Weight
: Approximated 0.011 gram
Working
Peak Reverse
Voltage
VRRM
VRWM
0.031(0.8) Typ.
Unit
Dimensions in inches and (millimeters)
V
75
V
VR
DC Blocking MAXIMUM
Voltage RATINGS AND ELECTRICAL
CHARACTERISTICS
Ratings
at 25℃ Voltage
ambient temperature unless otherwiseVspecified.
RMS
Reverse
R(RMS)
Single phase half wave, 60Hz, resistive of inductive load.
IFM
Forward Continuous Current
For capacitive load, derate current by 20%
IO
Average Rectified Output Current
RATINGS
300
mA
150
mA
Maximum Recurrent Peak Reverse Voltage
@=1.0s
IFSM
VRRM
12
20
13
30
2.0
14
40
1.0
15
50
16
60
18
80
10
A
100
115
150
120
200
Vo
MaximumDissipation
RMS Voltage
Power
VRMSPd
14
21
35
42
56
140
Vol
30
50
60
80
70
mW
105
20
28
200
150
200
Vol
Maximum DC Blocking Voltage
VDCR
Thermal Resistance Junction to Ambient
θJA
Maximum Average Forward Rectified Current
Junction temperature
Peak Forward Surge Current
8.3 ms single half sine-wave
2SHUDWLQJStorage
temperature
superimposed on rated load (JEDEC method)
Typical Thermal
Resistance
(Note
2)
Electrical
Ratings
@T
A=25℃
Typical Junction Capacitance (Note 1)
Storage Temperature Range
CJ
V (BR) R
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Forward
voltage
Maximum Average
Reverse Current at @T A=25℃
@T A=125℃
NOTES:
2- Thermal Resistance From Junction to Ambient
Reverse Recovery Time
2012-06
2012-1
625
1.0
30
-55~+150
75
Unit
V
Am
℃
℃
Am
40
120
+125 Max.
Min. -55 to
Typ.
100
K/W
℃/
- 65 to +175
PF
-55 to +150
Conditions
℃
IR=10μA
℃
VF1
0.715FM150-MH
V FM160-MH FM180-MH
IF=1mA
FM120-MH FM130-MH FM140-MH
FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL
VF
VF2
0.50 0.855
0.70
V
0.5
I0.85
F=10mA
VF3IR
1.0
V
VF4
1.25
V
IR1
1
μA
VR=75V
IR2
25
nA
VR=20V
CT
2
pF
VR=0V,f=1MHz
trr
4
ns
1Measuredcurrent
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Reverse
Capacitance between terminals
40
150
RΘJA
TSTG
Reverse Breakdown Voltage
Rated DC Blocking Voltage
IO
Tj
T
IFSM STG
TJ
Symbol
Operating Temperature
Range
Parameter
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Peak
surge current @=1.0μs
Markingforward
Code
53
10
IF=50mA
0.9
0.92
Vo
mA
IF=150mA
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS16TW1T1
FM1200-M+
SOT-363
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Typical
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
Characteristics
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vol
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vol
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vol
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Am
Am
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vol
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS16TW1T1
FM1200-M+
SOT-363
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOT-363
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
.004(0.10)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.087(2.20)
.054(1.35)
.045(1.15)
• Epoxy : UL94-V0 rated flame retardant
.071(1.80)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.096(2.45)
.071(1.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
.030(0.75)
.021(0.55)
.010(0.25)
18
10
.003(0.08)
80
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
.056(1.40)
Maximum Average Forward Rectified
Current
.047(1.20)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
0.012(0.3) Typ.
115
150
120
200
Volt
70
105
140
Volt
100
150
200
Volt
1.0
30
40
120
-55 to +125
Am
Am
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
IR
.016(0.40)
.004(0.10)
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.50
.043(1.10)
.032(0.80)
VF
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.5
0.9
0.92
Volt
10
mAm
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-1
WILLAS ELECTRONIC
Rev.D CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS16TW1T1
FM1200-M+
SOT-363
Plastic-Encapsulate
Diodes -20V- 200V
1.0A SURFACE
MOUNT SCHOTTKY BARRIER RECTIFIERS
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
Ordering
dissipation offers
design, excellent power
• Batch processInformation:
better reverse leakage current and thermal resistance.
Device PN (1)
optimizeBAS16TW1T1 G
board space.
‐WS
Packing SOD-123H
Tape&Reel: 3 Kpcs/Reel • Low profile surface mounted application in order to
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Note: (1) Ro HS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon
epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per***Disclaimer***
MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any
changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight
: Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings atcontained are intended to provide a product description only. "Typical" parameters 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
which may be included on WILLAS data sheets and/ or specifications can For
capacitive
load, derate current by 20%
and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
RATINGS
WILLAS does not assume any liability arising out of the application or Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volt
VRRM
use of any product or circuit. Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Blocking Voltage
Volts
Maximum DC
20
30
40
50
60
80
100
150
200
VDC
Amp
Maximum Average
Forward Rectified Current
IO
1.0
WILLAS products are not designed, intended or authorized for use in medical, Peak Forward
Surge Current 8.3 ms single half sine-wave
life‐saving implant or other applications intended for life‐sustaining or other related 30
IFSM
Amp
superimposed on rated load (JEDEC method)
applications where a failure or malfunction of component or circuitry may directly ℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
PF
or indirectly cause injury or threaten a life without expressed written approval 120
Typical Junction
Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
TJ
of WILLAS. Customers using or selling WILLAS components for use in - 65 to +175
TSTG
such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 0.9
Maximum Forward Voltage at 1.0A DC
0.92
Operating Temperature Range
Storage Temperature Range
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
@T A=125℃
IR
0.50
0.70
0.85
0.5
℃
℃
UNIT
Volt
10
mAm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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