WILLAS FM120-M+ THRU MMBTA5xLT1 Driver Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNP Silicon better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. Wecurrent declare that thelow material product capability, forwardof voltage drop. •ƽHigh surge capability. • High compliance with RoHS requirements. overvoltage protection. • Guardring Pb-Freefor package is available high-speed switching. • Ultra RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogenparts freemeet product for packing code suffix environmental standards of “H” • Lead-free 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Moisture Sensitivity Level 1 MIL-STD-19500 /228 RoHS product for packing code suffix "G" •MAXIMUM RATINGS Halogen free product for packing code suffix "H" Value Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage V CEO –60 –80 : UL94-V0 rated flame retardant • Epoxy Collector–Base VoltageSOD-123HV CBO –60 –80 : Molded plastic, • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 –4.0 Emitter–Base Voltage V EBO Method 2026 Collector Current — Continuous IC Polarity : Indicated by cathode band –500 • • Mounting Position : Any THERMAL CHARACTERISTICS • Weight : Approximated 0.011 gram 0.024(0.6) Vdc 0.031(0.8) Typ. Vdc 1 BASE mAdc Dimensions in inches and (millimeters) Symbol Max Unit Pr el IO Peak Forward Surge Current 8.3 ms single half sine-wave MMBTA55LT1 = 2H ; MMBTA56 LT1 = 2GMIFSM 1.0 30 DEVICE MARKING superimposed on rated load (JEDEC method) noted.) ELECTRICAL CHARACTERISTICS Typical Thermal Resistance (Note 2) (TA =RΘJA 25°C unless otherwise Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Characteristic CHARACTERISTICS Storage OFF Temperature Range Collector–Emitter Breakdown Voltage (3) CHARACTERISTICS (I C = –1.0 mAdc, I B= 0 ) (I E = –100 µAdc, I C = 0 ) Collector Cutoff Current 1- Measured at MHZ and applied = –60Vdc, I B reverse = 0) voltage of 4.0 VDC. ( V1 CE 2- Thermal Resistance Junction to Ambient CollectorFrom Cutoff Current ( V CB = –60Vdc, I E= 0) ( V CB = –80Vdc, I E= 0) ℃/W PF Unit -55 to +150 ℃ ℃ Vdc (BR)CEO –60 0.70 –80 — — 0.5 0.85 –4.0 10 — Vdc — –0.1 µAdc MMBTA55 — –0.1 MMBTA56 — –0.1 MMBTA55 MMBTA56 IR 0.50 V NOTES: Min Amp - 65 to +175 V Emitter–Base Breakdown Voltage @T A=125℃ Symbol -55 to +125 40 120 Max Amp SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage TSTG VF Maximum Forward Voltage at 1.0A DC 2 EMITTER RATINGS AND(1)ELECTRICAL Total MAXIMUM Device Dissipation FR– 5 Board, P D CHARACTERISTICS 225 mW TA = 25°C Ratings at 25℃ ambient temperature unless otherwise specified. Derate above60Hz, 25°C resistive of inductive load. 1.8 mW/°C Single phase half wave, Thermal Junction to Ambient R θJA 556 °C/W For capacitive load, Resistance, derate current by 20% Total Device Dissipation PD 300 mW SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Alumina Substrate, (2) TA = 25°C Marking Code 12 13 14 15 16 18 10 115 120 Derate above 25°C 2.4 mW/°C 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Thermal Resistance, Junction to Ambient R θJA 417 °C/W Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Junction and Storage Temperature T J , T stg –55 to +150 °C Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Maximum Average Forward Rectified Current 3 COLLECTOR 0.031(0.8) Typ. im ina Characteristic SOT–230.040(1.0) Vdc ry Rating Mechanical data (BR)EBO I CEO I CBO 0.9 0.92 Volts mAmp µAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA5xLT1 Driver Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) • Low power loss, high efficiency. Characteristic • High current capability, low forward voltage drop. ON CHARACTERISTICS • High surge capability. DC for Current Gain overvoltage protection. • Guardring (I C = –10 mAdc, V CE = –1.0 Vdc) switching. • Ultra high-speed (I C = –100mAdc, V CE = metal –1.0 Vdc) planar chip, silicon junction. • Silicon epitaxial parts meet environmental standards of • Lead-free Collector–Emitter Saturation Voltage • MIL-STD-19500 /228 I B = –10mAdc) (I C = –100mAdc, RoHS product for packing code suffix "G" Base–Emitter On Voltage Halogen free product for packing code suffix "H" (I C = –100mAdc, V CE = –1.0Vdc) Symbol 0.146(3.7) 0.130(3.3) Min Max Unit VCE(sat) 100 100 — — — –0.25 Vdc V BE(on) — –1.2 Vdc hFE 0.012(0.3) Typ. — 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) 50 Method 2026 4. f T is defined as the frequency at which |h f e | extrapolates to unity. Polarity : Indicated by cathode band 2H MMBTA55LT1 MHz 0.031(0.8) Typ. Dimensions in inches and (millimeters) im ina • Position : Any • Mounting ORDERING INFORMATION • WeightDevice : Approximated 0.011 gram Marking — 0.031(0.8) Typ. ry SMALL–SIGNAL CHARACTERISTICS : UL94-V0 rated flame retardant • Epoxy Current –Gain–Bandwidth Product(4) plastic, SOD-123H • Case : Molded fT (V CE = –1.0 Vdc, I C = –100mAdc, f = 100 MHz) , • Terminals :Plated terminals, solderable per MIL-STD-750 Shipping 3000/Tape & Reel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MMBTA56LT1 2GM 3000/Tape & Reel Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT TURN−ON TIME −1.0Voltage V Maximum Recurrent Peak Reverse Maximum RMS Voltage VCC VRRM +40 V VRMS 13 30 14 15 TURN−OFF TIME 40 50 16 +VBB 60 18 80 14 21 28 35 42 56 50 60 20 30 40 VDC RL Maximum Average Forward Rectified Current I O OUTPUT +10 V R V B sine-wave Peak Forward Surge Current in8.3 ms single half IFSM 0 superimposed on rated load (JEDEC method) tr = 3.0 ns * CS t 6.0 pF 5.0 mF Typical Thermal Resistance (Note 2) RΘJA 100 Typical Junction Capacitance (Note 1) CJ -55 to +125 5.0 ms Operating Temperature Range TJ Maximum DC Blocking Voltage 5.0 ms 12 20 Pr el Marking Code 100 Storage Temperature Range TSTG Vin 100 1.0 RB 30 10 VCC100 +40 V 70 115 150 120 200 Volts 105 140 Volts 100 RL 150 200 Volts 80 5.0 mF 40 100 120 Amp OUTPUT Amp * CS t 6.0 pF ℃/W PF -55 to +150 ℃ - 65 to +175 tr = 3.0 ns ℃ FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT CHARACTERISTICS SYMBOL *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.50 0.70 Figure IR 1. Switching Time Test Circuits 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA5xLT1 Driver Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. .106(2.70) • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011.080(2.04) gram 0.040(1.0) 0.024(0.6) .110(2.80) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. im ina Dimensions in inches and (millimeters) .070(1.78) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .008(0.20) .003(0.08) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volt Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volt Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volt Maximum Average Forward Rectified Current IO .020(0.50) IFSM .012(0.30) Pr el .004(0.10)MAX. Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) .055(1.40) .035(0.89) 0.071(1.8) 0.056(1.4) ry Mechanical data 0.012(0.3) Typ. .083(2.10) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) .006(0.15)MIN. .063(1.60) .047(1.20) • Low power loss, high efficiency. SOT-23 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .122(3.10) of • Lead-free parts meet environmental standards 1.0 30 40 120 Dimensions in inches -55 toand +125(millimeters) TJ CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volt 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA5xLT1 Driver Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Package outline SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) low forward voltage drop. • High current capability, Device PN Packing • High surge capability. (1) ‐WS Tape&Reel: 3 Kpcs/Reel for overvoltage protection. • GuardringPart Number G Ultra high-speed switching. •Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% Pr el for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DCand do vary in different applications and actual performance may vary over time. Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amps Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forwarduse of any product or circuit. Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ of WILLAS. Customers using or selling WILLAS components for use in IR mAmp 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.