WILLAS FM120-M+ THRU MMBTA0xLT1 Driver Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to FEATURES optimize board space. power loss,that highthe efficiency. • •Low We declare material of product current capability, low forward voltage drop. • High compliance with RoHS requirements. surge capability. • High Pb-Free package is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” • Ultra high-speed switching. Halogen free planar productchip, for packing codejunction. suffix “H” epitaxial metal silicon • Silicon Moisture Sensitivity Level 1 Lead-free parts meet environmental standards of •MAXIMUM RATINGS 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Value MMBTA05 MMBTA06 Halogen free product for packing code suffix "H" Collector–Emitterdata Voltage V CEO 60 80 Mechanical for packing code suffix "G" • RoHS product Rating Symbol Unit 0.040(1.0) 0.024(0.6) Vdc ry 60 80 Collector–Base V CBO : UL94-V0 Voltage rated flame retardant • Epoxy Emitter–Base Voltage SOD-123HV EBO 4.0 : Molded plastic, • Case , • Terminals solderable Collector:Plated Current terminals, — Continuous I C per MIL-STD-750 500 Vdc 0.031(0.8) Typ. im ina • Polarity : Indicated by cathode band THERMAL CHARACTERISTICS • Mounting Position : Any Characteristic • Weight : Approximated 0.011 gram 3 COLLECTOR Dimensions in inches and (millimeters) Symbol Max Unit 1 BASE Pr el Total Device Dissipation FR– 5 Board, (1) PD 225 mW 2 25°C TA =MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS EMITTER 1.8 mW/°C Derate above 25°C Ratings at 25℃ ambient temperature unless otherwise specified. Thermal Resistance, Junction to Ambient R θJA 556 °C/W Single phase half wave, 60Hz, resistive of inductive load. Total Device Dissipation For capacitive load, derate current by 20% PD 300 mW Alumina Substrate, (2) TA = 25°C 2.4 mW/°CFM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT FM150-MH SYMBOL FM120-MH FM130-MH FM140-MH RATINGS Derate above 25°C Marking CodeThermal Resistance, Junction to Ambient 12 13 14 15 18 10 115 120 R θJA 417 °C/W 16 30 –55 to40 50 °C 60 80 100 150 200 Maximum Recurrent Peak Volts VRRM Junction andReverse StorageVoltage Temperature T20 , T +150 J stg Maximum RMS Voltage Maximum DC Blocking Voltage DEVICE MARKING VRMS 14 21 28 35 42 56 70 105 140 Volts VDC 20 30 40 50 60 80 100 150 200 Volts IO MMBTA05LT1 = 1H, MMBTA06LT1 = 1GM 1.0 30 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Typical Thermal ResistanceCharacteristic (Note 2) RΘJA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CHARACTERISTICS OperatingOFF Temperature Range CJ TJ Storage Temperature Range Breakdown Voltage(3) TSTG Collector–Emitter (I C = 1.0 mAdc, I B = 0) CHARACTERISTICS NOTES: Min -55 to +125 Max 40 120 Amps Amps Unit ℃/W PF -55 to +150 ℃ - 65 to +175 Vdc V (BR)CEO 60 ℃ — FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH80 MMBTA06 — Volts 0.9 0.92 VF 0.50 0.70 4.0 — Vdc 0.85 V (BR)EBO Maximum Average Reverse (I E = 100 µAdc,Current I C = 0)at @T A=25℃ Rated DC Blocking Voltage Collector Cutoff Current Symbol MMBTA05 Maximum Forward Voltage at 1.0A DC Voltage Emitter–Base Breakdown 0.5 IR @T A=125℃ I CES — 0.1 10 — 0.1 — 0.1 µAdc mAmp ( V CE = 60Vdc, I B = 0) Emitter Cutoff Current 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. ( V CB = 60Vdc, I E = 0) 0.031(0.8) Typ. mAdc Method 2026 SOT–23 Vdc 2- Thermal Resistance From Junction to Ambient MMBTA05 ( V CB = 80Vdc, I E = 0) MMBTA06 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 2012-06 2012-11 µAdc I CBO WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA0xLT1 Driver FM1200-M+ 1.0A SURFACE MOUNTTransistor SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) optimize board space. Characteristic • Low power loss, high efficiency. ON current CHARACTERISTICS capability, low forward voltage drop. • High capability. • High surge DC Current Gain formAdc, overvoltage protection. • Guardring (I C = 10 V CE = 1.0 Vdc) switching. • Ultra high-speed (I C = 100 mAdc, V CE = 1.0 Vdc) epitaxial planarSaturation chip, metal silicon junction. • SiliconCollector–Emitter Voltage parts meet environmental standards of • Lead-free (I = 100 mAdc, I = 10 mAdc) Symbol On Voltage product for packing code suffix "G" • RoHS Base–Emitter V C MIL-STD-19500 /228 Min 0.146(3.7)Max Unit 0.130(3.3) 0.012(0.3) Typ. hFE –– 100 100 — — — 0.25 — 1.2 0.071(1.8) 0.056(1.4) VCE(sat) Vdc B Vdc BE(sat) (I Cfree = 100 mAdc,for V CE = 1.0 Vdc) Halogen product packing code suffix "H" Mechanical data SMALL–SIGNAL CHARACTERISTICS 0.040(1.0) 0.024(0.6) : UL94-V0 rated flame retardant • Epoxy Current –Gain – Bandwidth Product(4) Molded plastic, • Case : (V V, I C = SOD-123H 10mA, f = 100 MHz) CE = 2.0 as terminals, the frequency at which |hper f e |MIL-STD-750 extrapolates to, unity. 4. f T is defined • Terminals :Plated solderable 100 f — ry T 0.031(0.8) Typ. Method 2026 im ina ORDERING INFORMATION • Polarity : Indicated by cathode band Device Marking • Mounting Position : Any MMBTA05LT1 • Weight : Approximated 0.011 1H gram MHz 0.031(0.8) Typ. MMBTA06LT1 Dimensions in inches and (millimeters) Shipping 3000/Tape & Reel 3000/Tape & Reel 1GM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Pr el Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 21 28 35 42 56 70 105 140 Volts 30 40 50 60 80 100 150 200 Volts VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA0xLT1 Driver Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT-23 • Low profile surface mounted application in order to .006(0.15)MIN. .063(1.60) .047(1.20) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .110(2.80) • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" ina ry Mechanical data 0.012(0.3) Typ. .083(2.10) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .122(3.10) • Ultra high-speed switching. .106(2.70) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .008(0.20) Method 2026 .080(2.04) • Polarity : Indicated by cathode band .070(1.78) • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Pr eli m .003(0.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRRM Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage 12 20 14 VRMS .020(0.50) V DC .012(0.30)20 Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 13 30 21 30 IO IFSM 14 40 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% 15 50 16 60 RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 1.0 30 Dimensions in inches and (millimeters) Typical Thermal Resistance (Note 2) 18 80 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-11 Volts WILLAS ELECTRONIC CORP. mAmps WILLAS FM120-M+ THRU MMBTA0xLT1 Driver Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. efficiency. • Low power loss, high Device PN Packing 0.146(3.7) 0.130(3.3) voltage drop. • High current capability, low forward (1) ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surgePart Number G Guardring for overvoltage protection. •Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amps Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.